NTE128P (NPN) & NTE129P (PNP)

Silicon Complementary Transistors

General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
D High VCE Ratings
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, PTOT
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.850W
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
CollectorEmitter Breakdown Voltage

Symbol

Test Conditions

BVCEO IC = 10mA, IB = 0

Min

Typ

Max

Unit

80

Collector Cutoff Current

ICBO

VCB = 80V

100

nA

Emitter Cutoff Current

IEBO

VEB = 4V

100

nA

DC Current Gain

hFE

IC = 10mA, VCE = 2V

100

IC = 350mA, VCE = 2V

100

300

0.35

IC = 50mA

50

VCB = 10V, IE = 0, f = 1MHz

15

CollectorEmitter Saturation Voltage

Current Gain Bandwidth Product
Output Capacitance

VCE(sat) IC = 350mA
fT
Cob

V
pF

.200 (5.08)
.180 (4.57)

.100 (2.54)

E B C

.180
(4.57)

.594
(15.09)

.018 (0.46)

.015 (0.38)
3.050 (1.27)

.050 (1.27)

.050 (1.27)

.140
(3.55)

.090 (2.28) R