Semiconductor KTA1046: Technical Data

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SEMICONDUCTOR

KTA1046

TECHNICAL DATA

EPITAXIAL PLANAR PNP TRANSISTOR

NDUSTRIAL USE.
GENERAL PURPOSE APPLICATION.

DIM
A
B
C
D
E
F

FEATURES

Low Collector Saturation Voltage

: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.


Complementary to KTC2026.

T
L

RATING

VCBO

Collector-Base Voltage

UNIT

-60

VCEO

-60

Emitter-Base Voltage

VEBO

-7

Collector Current

IC

-3

Base Current

IB

-0.5

Ta=25

Dissipation

Tc=25

Junction Temperature
Storage Temperature Range

P
N

Collector-Emitter Voltage

Collector Power

Q
R
S
T
U

SYMBOL

CHARACTERISTIC

M
N
O

MAXIMUM RATING (Ta=25)

G
H
J
K
L

MILLIMETERS
10.30 MAX
15.30 MAX
2.700.30
0.85 MAX
3.200.20
3.000.30
12.30 MAX
0.75 MAX
13.600.50
3.90 MAX
1.20
1.30
2.54
4.500.20
6.80
2.600.20
10
25
5
0.5
2.600.15

1. BASE
2. COLLECTOR

3. EMITTER

PC

TO-220IS

20

Tj

150

Tstg

-55150

ELECTRICAL CHARACTERISTICS (Ta=25)


CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-60V, IE=0

-100

Emitter Cut-off Current

IEBO

VEB=-7V, IC=0

-100

V(BR)CEO

IC=-50mA, IB=0

-60

VCE=-5V, IC=-0.5A

100

300

hFE(2)

VCE=-5V, IC=-3A

20

VCE(sat)

IC=-2A, IB=-0.2A

-0.25

-1.0

Collector-Emitter Breakdown Voltage

hFE(1) (Note)

DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage

VBE

VCE=-5V, IC=-0.5A

-0.7

-1.0

Transition Frequency

fT

VCE=-5V, IC=-0.5A

30

MHz

VCB=-10V, IE=0, f=1MHz

45

pF

OUTPUT

0.4

15

1.7

VCC =-30V

0.5

Cob

Collector Output Capacitance

ton

Turn-on Time

I B2
INPUT

Switching Time

tstg

Storage Time

IB1

I B1
I B2

20sec

tf

Fall Time
Note : hFE(1) Classification

1999. 10. 20

Y:100200,

-IB1 =IB2=0.2A

DUTY CYCLE <


= 1%

GR:150300

Revision No : 2

1/2

KTA1046

I C - V CE

VCE(sat) - I C

-80

-3

-70

COLLECTOR-EMITTER SATURATION
VOLTAGE V CE(sat) (V)

COMMON
EMITTER
Tc=25 C

-60
-50

-40

-2

-30
-20

IB =-10mA

-1
0

0
-1

-2

-3

-4

-5

-6

-1

COMMON EMITTER
IC /I B =10

-0.5
-0.3

-0.1

C
Tc=25 C
Tc=-25 C

-0.05

-0.02
-0.02

COLLECTOR-EMITTER VOLTAGE VCE (V)

-0.1

-1

-0.3

-3

-5

COLLECTOR CURRENT I C (A)

SAFE OPERATING AREA

h FE - I C
-10

1k

I C MAX.(PULSED)*

COMMON EMITTER

500
300

Tc=25 C

100
50

20
-0.02

-0.1

-0.3

-1

I C MAX.
(CONTINUOUS)

-3

AT
ER

Tc=-25 C

-5

S*
1m mS*
10
S*
0m N
10
IO

Tc=100 C

OP

COLLECTOR CURRENT I C (A)

VCE =-5V

DC

DC CURRENT GAIN h FE

00

=1

Tc

-1
-0.5

* SINGLE NONREPETITIVE
PULSE Tc=25 C

-0.3

VCEO MAX.

COLLECTOR CURRENT I C (A)

-4

CURVES MUST BE DERATED


LINEARLY WITH INCREASE
IN TEMPERATURE

-3
-0.1

COLLECTOR CURRENT I C (A)

-1

-3

-5

-10

-30 -50

-100

COLLECTOR-EMITTER VOLTAGE VCE (V)

TRANSIENT THERMAL RESISTANCE


R th(t) ( C/W)

R th(t) -

1k
(1) WITHOUT HEAT SINK
(2) INFINITE HEAT SINK

100
(1) Ta=25 C

10

(2) Tc=25 C

0.1
10

-3

10

-2

10

-1

10

10

TIME t (sec)

1999. 10. 20

Revision No : 2

2/2

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www.datasheetcatalog.com
Datasheets for electronics components.

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