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  • SCR Vs IGBT

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    1. SCRs are three-terminal devices that can only conduct current in one direction and are turned on through a gate signal, but cannot be turned off without removing the gate signal or load. IGBTs are also three-terminal devices but can be turned on and off through gate signals, making them fully controllable. 2. SCRs have higher current and power capabilities than IGBTs but operate at lower frequencies with higher switching losses. IGBTs have lower conduction losses than SCRs. 3. Common applications of SCRs include rectifiers, current source inverters, and control of welding machines. IGBTs are commonly used in inverters, medium power applications, and

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    SCR vs IGT basic and datasheet comparisons...

    Original Title

    SCR_vs_IGBT

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    1. SCRs are three-terminal devices that can only conduct current in one direction and are turned on through a gate signal, but cannot be turned off without removing the gate signal or load. IGBTs are also three-terminal devices but can be turned on and off through gate signals, making them fully controllable. 2. SCRs have higher current and power capabilities than IGBTs but operate at lower frequencies with higher switching losses. IGBTs have lower conduction losses than SCRs. 3. Common applications of SCRs include rectifiers, current source inverters, and control of welding machines. IGBTs are commonly used in inverters, medium power applications, and

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    2K views2 pages

    SCR Vs IGBT

    Uploaded by

    MuthuRaj
    1. SCRs are three-terminal devices that can only conduct current in one direction and are turned on through a gate signal, but cannot be turned off without removing the gate signal or load. IGBTs are also three-terminal devices but can be turned on and off through gate signals, making them fully controllable. 2. SCRs have higher current and power capabilities than IGBTs but operate at lower frequencies with higher switching losses. IGBTs have lower conduction losses than SCRs. 3. Common applications of SCRs include rectifiers, current source inverters, and control of welding machines. IGBTs are commonly used in inverters, medium power applications, and

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    of 2

    Difference between SCR and IGBT:

    I.
    S.
    No

    1.

    General parameters:
    Parameters
    Considered

    Introduction

    Current Conduction
    Capability

    Silicon Controlled
    Rectifier (SCR)
    Three terminal device:
    Anode, Cathode, Gate

    3.

    Turn ON and Turn


    OFF

    4.

    Controllable Nature

    5.

    Gate Signal
    Requirement

    Yes, Uni-Directional current


    device

    Yes, but Bipolar voltage


    withstanding device

    Yes, Unipolar voltage


    withstanding device acquired
    from BJT and MOSFET.

    Applying signal at gate


    terminal but cant be turned
    off using same gate signal.
    Partially controllable
    Pulse voltage is applied as
    control signal to turn ON
    then, no need of gate pulse.

    6.

    Power Capability

    High (up to 100 MVA)


    Vmax: 12 kV ; Imax: 6kA

    7.

    Switching Speed

    Low

    8.

    Switching
    Frequency

    Operate at low (<1kHz) but


    high power applications.

    9.

    Switching Loss

    High loss because of low


    switching frequency

    10.
    11.

    Conduction Loss

    Gate Control
    Methods

    Three terminal device:


    Collector, Emitter, Gate. It is
    advantage combination of
    BJT and MOSFET.

    Yes, Uni-Directional current


    Device

    2.
    Voltage Withstand
    Ability

    Insulated Gate Bipolar


    Transistor (IGBT)

    Low Conduction Loss


    To turn ON: forward voltage
    triggering, gate triggering,
    dv/dt triggering, light
    triggering, temperature
    triggering
    To turn OFF: either by load
    or forced commutation
    technique

    Both ON and OFF can be


    possible using gate signals.
    Fully Controllable
    Continuous gate signal is
    required to control the device.
    Medium (10 kVA to 10
    MVA)
    Vmax: 6kV ; Imax: 1.2 kA
    Medium
    (BJT: Medium ; MOSFET:
    Fast)
    Operate at medium (1kHz to
    100 kHz) but medium power
    applications.
    Low switching loss than SCR
    but high switching loss than
    MOSFET.
    Lower conduction loss

    PWM based technique is


    generally used like SPWM,
    CB-PWM, SVPWM,
    Harmonic injection PWM

    12.

    Related Devices

    13.
    Applications

    II.
    S.
    No
    1.
    2.
    3.
    4.
    5.

    GTO, TRIAC
    High power applications
    (FACTS), Rectifiers, Current
    source inverters, Control of
    welding machines, etc.,

    IGCT, MCT
    Inverters (VSI, VSC-MLI),
    High voltage medium power
    applications, Choppers, etc.,

    Datasheet Comparison:(IXYS)
    Parameters
    Considered
    Voltage Rating
    (Tj = 25oC)
    Current Rating
    (Tj = 25oC)
    Power
    (Tj = 25oC)
    Features
    Applications

    SCR (MCO 500)


    VRRM = (1200 1800) V
    IFRMS = 880 A
    IFAVM= 560 A
    PGM = 120 W
    (tp = 30 s)
    Isolation voltage (3600 V),
    Planar passivated chips
    Power converter, Lighting
    control.

    IGBT (IXGH 32N170)


    VCES = 1700 V
    IC = 75 A
    PC = 350 W
    High current capability,
    Rugged NPT structure
    Capacitor discharge & pulse
    circuits, UPS, SMPS.

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