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NPN Epitaxial Darlington Transistor: Medium Power Linear Switching Applications
NPN Epitaxial Darlington Transistor: Medium Power Linear Switching Applications
TIP120/121/122
Medium Power Linear Switching Applications
Complementary to TIP125/126/127
TO-220
1.Base
2.Collector
3.Emitter
Parameter
Collector-Base Voltage
: TIP120
: TIP121
: TIP122
Value
60
80
100
Units
V
V
V
60
80
100
V
V
V
VCEO
VEBO
Emitter-Base Voltage
IC
ICP
IB
120
mA
PC
65
TJ
Junction Temperature
150
TSTG
Storage Temperature
- 65 ~ 150
Equivalent Circuit
C
R1
R2
R1 8k
R 2 0.12 k
ICEO
ICBO
Parameter
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
Test Condition
IC = 100mA, IB = 0
Min.
Max.
60
80
100
Units
V
V
V
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
: TIP120
: TIP121
: TIP122
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
mA
2.0
4.0
V
V
IEBO
VBE = 5V, IC = 0
hFE
* DC Current Gain
VCE(sat)
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VBE(on)
* Base-Emitter ON Voltage
VCE = 3V, IC = 3A
2.5
Cob
Output Capacitance
200
pF
1000
1000
TIP120/121/122
Typical characteristics
10000
VCE = 4V
1000
100
0.1
10
3.5
IC = 250IB
3.0
2.5
2.0
1.5
V BE(sat)
1.0
V CE(sat)
0.5
0.1
10
1000
10
10
0.1
10
0.1
TIP120
TIP121
TIP122
0.01
1
s
5m
Cob
Cib
s
1m
100
C
D
s
0u
10 us
0
50
f=0.1MHz
10
100
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TIP120/121/122
Package Demensions
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
1.52 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
10.08 0.30
(1.00)
13.08 0.20
(45
1.27 0.10
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H3