HELSINKI UNIVERSITY OF TECHNOLOGY

Microfabrication
Introduction to Micro System Technology
Lecture 2

Quan Zhou

MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Control Engineering Laboratory

Silicon Micromachining
Bulk micromachining
Surface micromachining

LIGA technique
Material removal methods

Excimer laser micromachining

Ion beam milling
Micro electro-discharge machining
Micro Ultrasonic machining
Diamond milling
Plasma beam machining
Electron beam machining
Dry etching
Soft Lithography

Table of Contents, Slide 2

Material deposition methods

Micromolding
Electroplating
Micro stereo lithography
Laser-assisted chemical vapor
deposition
Localized electrochemical
deposition

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Microfabrication and Micromachining Methods

Silicon
Glass
Ceramics
Polymers

Metal
Au, Pt, Al, Ti, Ni

Active materials:
Piezoelectric
SMA (e.g. NiTi)

Thick resist lithography

PMMA, SU-8, AZ4562, AZ9260, MaP 100

MSM
EMFi

Surface polymer micromachining

Polyimide, Parylene, Electrodepositable photoresists,
Conductive polymers

Magneto/electrostrictive materials
Active polymers

Soft lithography
PDMS
Micromolding
PMMA, PC, PS, COC, PP

Table of Contents, Slide 3

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Materials

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Have the same time good electric and

mechanical properties
the elasticity of silicon is

comparable to that of steel

stiffer than steel due to its low
density
Some silicon compounds, have
excellent physical and chemical
properties for surface
micromachining.
silicon nitride
silicon dioxide
Can be used for sensor and

actuator
Integrated MEMS on single chip
Low cost, high reliability

Table of Contents, Slide 4

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Properties of Silicon

Layer techniques
Doping
Lithography
Etching

Table of Contents, Slide 5

Bulk
Bulkmicromachining
micromachining
Surface
Surfacemicromachining
micromachining

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Silicon Fabrication Techniques

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Purpose
Produce and structure layers of materials in the micro and nanometer

range

Methods
Thin film techniques
Deposition from the liquid phase
Thick film techniques

Table of Contents, Slide 6

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Layer Techniques

Thickness of a few nm to a few m

For generation of function layer and
structuring the chip
Deposition processes
Thermal deposition
Physical layer deposition
vapor deposition
sputtering process
Chemical layer deposition
chemical vapor deposition (CVD)
Plasma Enhanced CVD (PECVD)

Table of Contents, Slide 7

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Thin Film Techniques

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Galvanic techniques
can deposit various kind of metal
high aspect ratio
Used for LIGA

Catalytic method
allow only the deposition of metals

Spin-coating method
Used for phtosensitive coating

Table of Contents, Slide 8

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Deposition from the Liquid Phase

High-Aspect-Ratio Photolithography
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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 9

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Doping atoms are introduced to a silicon substrate in a defined way

so that n or p conducting layers are formed.
Determine the electric properties
Improve mechanical properties such as wear and corrosion, as etching

stop barrier

boron, phosphorus

Doping methods used in MST

Diffusion methods
Process in a furnace
doping profile only on the surface
Ion implantation
the ion can penetrate up to few micrometers

Table of Contents, Slide 10

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Doping

Expose to Dopant

Dopant Successfully Implanted

Remove Oxide Layer

Feature Successfully Created

Add Oxide Layer to Continue

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MICRO AND NANO SYSTEMS RESEARCH GROUP

Diffusion Doping

Table of Contents, Slide 11

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Used for preparing the substrate of a

wafer for the subsequent processing
stage.
Elements
Light source
light, X-ray, electron or ion beams
Ultraviolet (UV) light with a wavelength
of 250-450 nm is used for silicon
process
Mask
a chromium pattern on a lighttransparent substrate (glass).
Resist
sensitive to the light source, about 1
m thick, applied on the silicon wafer or
another deposition layer
positive and negative resist

Table of Contents, Slide 12

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Lithography

Contact lithography
resolution 1 m or high
high mechanical load, easily

damaged

Proximity lithography
air gap 20-50 m, reduced wear
resolution is limited to 2 m

Projection lithography
using a reducing high resolution

lens (5:1 - 10:1)

resolution of 0.5 m
expansive

Table of Contents, Slide 13

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Three Lithography Methods

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Select Silicon Substrate

Add Oxide Layer

Add Photoresist Layer

Select Pattern Mask

Ready for Exposure

Table of Contents, Slide 14

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Preparation of Substrate

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Expose to Ultraviolet Light

Exposed Photoresist is Hardened

Table of Contents, Slide 15

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Exposure of the Photoresist

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Prepare for Etching

Expose to Photoresist Solvent

Remove Unhardened Photoresist

Table of Contents, Slide 16

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Patterning of the Photoresist

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Expose to Hydrofluoric Acid

Remove Exposed Oxide

Remove Hardened Photoresist

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Etching of the Oxide Layer

Table of Contents, Slide 17

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Aspect ratio
1-2 using UV lithography
6-8 with special techniques

Gray-tone lithography
raster-screen photomask

Electro-optical methods
write point by point with a

electron or ion beam

no mask needed
time-consuming

X-ray lithography
small wavelength (1 nm),

structure precision can be 0.2

m.

Table of Contents, Slide 18

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More in Lithography

Example: A Microstructure Made

using Gray-Tone Lithography
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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 19

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To remove the exposed (unexposed) areas of the photo resist from

the wafer and the respective deposited layers.
Wet Etching
Dry Etching

Table of Contents, Slide 20

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Etching Techniques

Dipping the substrate into an etching bath or spraying it with etching

solution.
Etching solution
acidic or alkaline

Two types (based on structure of the material or the etching solution)

Isotropic etching
Anisotropic etching

Table of Contents, Slide 21

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Wet Etching

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Etching is isotropic if the material is

amorphous or polycrystalline
Attack the material at the same rate in
all directions
Formation of cavities with rounded

off edges
The resist is under cut
Limited for deep forming, not
suitable for cavity width smaller
than 2-3 m.

Table of Contents, Slide 22

Used for many applications in surface

micromachining

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Isotropic Etching

Single-crystal silicon can be

anisotropically etched
The etching speed is dependent on
the crystals orientation
Etching solution
KOH
NaOH
EDP (ethylene diamine

pyrocatechol).

Resist
Silicon dioxide
Silicon nitride

Table of Contents, Slide 23

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Anisotropic Etching

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Basic Structures can be

Produced in Silicon
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a) (110) silicon; b) (100) silicon.

Table of Contents, Slide 24

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Physical sputter etching or ion beam

etching
sand blasting technology in the

atomic level
using inert ions
anisotropic, selectivity is nonguaranteed
speed: a few 10 nm/min

Chemical plasma etching

using reactive gases
isotropic, selective
speed: up to 100 nm/min

Combined physical/chemical etching

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Dry Etching

reactive ion etching (RIE): 20-

200nm/min
reactive ion beam etching: 500 nm/min
Table of Contents, Slide 25

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Reactive Ion Etching (RIE)

Reactive Ion Etching (RIE) processes
make etching independent of the
crystal orientation possible.
The etch rates achieved in RIE
processes are also higher than those
of the most wet chemical etchants.
The most widely used gas mixtures
contain fluorine, chlorine, oxygen and
carbon.

Table of Contents, Slide 26

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Example: Aluminum Microstructures

Made by the Plasma Etching Process
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Table of Contents, Slide 27

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Table of Contents, Slide 28

A technique used for making metallic

pads on a chip.
Suitable for making electrically
conductive layers from hard-to-etch
metals.
Normal solvent: aceton.

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Lift-Off Technique

Example: Lift-off Technology for

Making Interdigital Capacitor Structure
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Table of Contents, Slide 29

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Bulk micromachining
form microstructure by etching away the bulk of the silicon wafer to archive

the desired result.

structuring in 3D, the entire substrate can be used.
The term bulk micromachining in 1982

Surface micromachining
build up the structure in layers of thin films on the structure of the silicon

wafer or other suitable substrate.

can make complicated planar structure with a maximum thickness of a few
micrometers
Surface micromachning was born in 1985

Table of Contents, Slide 30

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Bulk and Surface Micromachining

Developed in 60s
Crystal orientation plays a big role
Possibility to connect multiple wafer
to form complex 3D structures
Limitation:
the lattice structure of the silicon

crystal is not variable,

cannot make simple circular,
cylindrical cavities or columns, etc.

Table of Contents, Slide 31

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Bulk Micromachining

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Table of Contents, Slide 32

Doping the silicon substrate with

germanium, phosphorus or boron
atoms
Boron can be driven into the silicon
as far as 20 m over periods of 15 to
20 hours.

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Etch-stop Techniques: Boron

Implantation

Etch-stop Techniques:
Electrochemical Technique
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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 33

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Basic methods
thin layer technology
selective etching

Base materials
metals, polycrystalline silicon

Features
can make microstructure with

thickness in nm range
make complex, 3D microstructure
with a height about 20 m.

Table of Contents, Slide 34

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Surface Micromachining

Beam size:
0.8m W, 2.0m H

Table of Contents, Slide 35

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Example for Surface Micromachining:

Comb-like, Free-standing Microstructure

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Application Example: Electrostatic

Micromotor (Surface Micromachining)

Diameter: 100m
Distance between the rotor and the stator: 1-2m
Rotation speed: 15,000 rpm
Operation Voltage: 35V

Table of Contents, Slide 36

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Application Example: Optical Fiber

Alignment Device (Bulk Micromachining)
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Table of Contents, Slide 37

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German acronym for (LIthograpie, Galvanoformung, Abformung),

lithography, electroplating , molding process

Developed at the Research Center Karlsruhe in the early 80s

Features
allow 3D microstructure of several hundred m high and laterally in 0.2 m
can use plastics, metals, ceramics or their combinations - hybrid

microsystem
high production cost

Table of Contents, Slide 38

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LIGA Technology

Steps of LIGA Process

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Table of Contents, Slide 39

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Mask material
X-ray absorber: gold, tantalum

Mask foil
X-ray transparent material: titanium,

beryllium

Relation between mask and structure

thickness
to make a 400 m thick structure

with X-ray wavelength of 0.225 nm,

the gold layer should be about 10
m

Table of Contents, Slide 40

The production cost of a mask could

be up to several thousands of dollars

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Mask Fabrication

X-ray
wavelengths 0.2-0.6nm
high energy density and high

parallelism (spread of 0.2mrad)

deep penetration - suitable to build
3D structure up to 1mm

Expose time
350 m PMMA resist must be

exposed for 8 hours to a high

energy dose of radiation

Table of Contents, Slide 41

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X-ray Lithography

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Table of Contents, Slide 42

The substrate material must be

electrically conductive
Microstructure of nickel, copper gold,
nickel-cobalt and nickel-iron alloys can
be made in LIGA process.
Can be best carried out by using
nickel-based electrolytes

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Microgalvanics

To mass production of the plastic

components
Methods
injection
materials: non-viscous thermoplast
like polyoxymethyleme or PMMA.
reaction injection
materials: reactive resin based on
methacrylatene, silicon and
caprolactame.

Table of Contents, Slide 43

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Plastic Modeling

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Example: Cylindrical lenses

mode
of PMMA (LIGA Process)
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Thickness: 150m
Table of Contents, Slide 44

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Sacrificial LIGA (SLIGA)

Technique
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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 45

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Example: Acceleration Sensor

Components (LIGA)
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Height 100m
Gap 3m

Table of Contents, Slide 46

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Nickel impeller size:

260m, 150m H

Table of Contents, Slide 47

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Example: Microturbine Impeller

(SLIGA)

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Height: 100m
Clearance between the axle
and the rotor: 500nm
Table of Contents, Slide 48

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Example: Micromotor
(SLIGA)

Microstructure with a Comb Drive

(LIGA)
MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 49

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Example: Micropump (LIGA)

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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 50

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Example: A Bistable Fluidic Switch

(LIGA)
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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 51

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Example: High Pass Optical Filter

(LIGA)
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a) a nickel mold; b) the tertiary microstructure made of PMMA.

Table of Contents, Slide 52

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Silicon Micromachining

Material deposition methods

Bulk micromachining

Laser-assisted chemical vapor

Surface micromachining

LIGA technique
Material removal methods
Excimer laser micromachining
Ion beam milling
Micro electro-discharge machining
Micro Ultrasonic machining

deposition
Micro stereo lithography
Localized electrochemical
deposition
Electroplating
Plasma beam machining
Electron beam machining

Diamond milling
Plasma beam machining
Electron beam machining

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Microfabrication and Micromachining Methods

Dry etching

Table of Contents, Slide 53

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Excimer Laser
The excimer (excited dimer) laser
invented in 1975
using diatomic molecule as lasing material
N2, H2
rare gas halide lasers are referred to as excimer lasers
Wavelength in ultraviolet range
157 nm, 193 nm, 248 nm, 308 nm, 353 nm

Excimer laser and organic materials

effects on organic materials
plastics, polymers (compatible with chemical bond energies)
intensity of the laser and effects
applications in eye surgery

Table of Contents, Slide 54

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Remove material at every pulse

Cuts of hundreds of microns can be
made
Shape of the structure is controlled by
a mask
Material is selectively removed
anisotropic

Structure can be made

vertical walls
tapered walls

Table of Contents, Slide 55

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MICRO AND NANO SYSTEMS RESEARCH GROUP

Excimer Laser
Micromachining

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Ion Beam Milling

Apply ion beam directly onto substrate through a mask
No resist layer
Anisotropic
Be able to make thick microstructure (about 100mm)

Table of Contents, Slide 56

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Example: Microstructure Created using Ion

Milling
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Table of Contents, Slide 57

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dielectric fluid
tool electrode

non-conventional machining
first experiment at the end of 60s
re-discovered at later 80s
remove material through erosive
action
tool wear ration 3:1 to 70:1
frequency 180/s - 500,000/s
temperature up to 12,000 C

workpiece
electrode

structure can be made

micro holes
micro shafts
other complex shapes

Table of Contents, Slide 58

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Micro Electro-discharge
Machining

 EDM-drilled holes for ink-jet printer nozzles, f15-300mm (1985)

Drilling of deep microholes,

aspect ratio of 10:1 for f50mm hole

(1989)
3D micro EDM, smallest electrodes f4.3mm (1991)
Combining with electroforming, process for micronozzle fabrication
(1994)
Commercial micro EDM machine (1990s)

Table of Contents, Slide 59

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History of Micro EDM

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Table of Contents, Slide 60

Low installation cost

little job overhead
Flexible, ideal for prototypes
Easy to make complex 3D structure
Crystallographic directions have no
influence on the EDM
High aspect ratio

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Benefits of the Micro

EDM

die-sinking EDM
tool material
copper, graphite
complex tool, expansive

wire EDM
tool material
tungsten, copper
can make complex parts
cheaper, easy to renew tool
shorter machining time
can only make ruled surface
wire may bend - reduced

accuracy

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Different Types of
EDM

machinable material
electrically conductive
semiconductor materials

Table of Contents, Slide 61

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Fabrication of
Micronozzle
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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 62

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Fabrication of Micro EDM Electrodes

MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 63

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Table of Contents, Slide 64

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Control Engineering Laboratory

MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 65

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Chemical deposition from vapor phase

by laser-assisting
Laser
Nd-YAG (neodymium yttrium

aluminum garnet) or Ar+

Substrates
silicon
carbon
boron
oxides
nitrides
carbides
borides
metals

Table of Contents, Slide 66

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Laser-assisted Chemical Deposition

(LCVD)

High pressure LCVD

>1 bar
high growth rate (>1.1 mm/s max)

Low pressure LCVD

<<1 bar
low growth rate <100 m/s

Table of Contents, Slide 67

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High Pressure and Low Pressure

LCVD

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Free-Standing Microstructure with

LCVD
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Table of Contents, Slide 68

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Two Laser
LCVD
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MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 69

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Principle
Generating 3D structure by

constructing 2D sliced thin plane

from liquid

Light source
He-Cd laser
Xenon lamp

Material
ultraviolet radiation curing polymer

liquid

Table of Contents, Slide 70

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MICRO AND NANO SYSTEMS RESEARCH GROUP

Micro Stereo
Lithography

IH process
need support
layer by layer
resolution 5 m

Super IH process
form solid in 3D liquid space
make freely moveable structure
resolution <1 m
higher yield rate

Table of Contents, Slide 71

MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

IH and Super IH Stereo Lithography

Process

HELSINKI UNIVERSITY OF TECHNOLOGY

Control Engineering Laboratory

Microstructures Made by Micro

Stereo Lithography Process
MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 72

HELSINKI UNIVERSITY OF TECHNOLOGY

Control Engineering Laboratory

Micro
Stereo Lithography
Process
MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 73

HELSINKI UNIVERSITY OF TECHNOLOGY

Control Engineering Laboratory

Localized Electrochemical
Deposition
MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 74

HELSINKI UNIVERSITY OF TECHNOLOGY

Control Engineering Laboratory

The Electrode of
LED
MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 75

HELSINKI UNIVERSITY OF TECHNOLOGY

Control Engineering Laboratory

Local
Electrochemical
Deposition
MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 76

HELSINKI UNIVERSITY OF TECHNOLOGY

Control Engineering Laboratory

Nanofabrication?
MICRO AND NANO SYSTEMS RESEARCH GROUP

MICRO AND NANO SYSTEMS RESEARCH GROUP

Table of Contents, Slide 77

HELSINKI UNIVERSITY OF TECHNOLOGY

Control Engineering Laboratory