C1-12

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The C1-12 is Designed for 12.5 Volt
supply. Applications from 450 to 512
MHz.

PACKAGE STYLE .280 4L PILL

A

FEATURES:

PG = 11 dB Typ. at 1.1 W/470 MHz

C = 65 % Typ. at 1.1 W/470 MHz
Omnigold Metalization System

B
E

MAXIMUM RATINGS
D

250 mA

IC

VCBO

36 V

VCEO

28 V

DIM

MINIMUM
inches / mm

inches / mm

.220 / 5.59

.230 / 5.84

MAXIMUM

VEBO

4.0 V

PDISS

5.0 W @ TC = 25 C

.275 / 6.99

.285 / 7.24

.004 / 0.10

.006 / 0.15

TJ

-65 C to +200 C

.050 / 1.27

.060 . 1.52

.118 / 3.00

.130 / 3.30

TSTG

-65 C to +150 C

JC

35 C/ W

1.055 / 26.80

CHARACTERISTICS

ORDER CODE: ASI

TC = 25 C

NONETEST CONDITIONS

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 5.0 mA

14.5

BVCES

IC = 5.0 mA

37

BVEBO

IE = 5.0 mA

4.0

hFE

VCE = 6.0 V

COB

VCB = 12 V

PG
C

VCE = 12.5 V

IC = 100 mA

10
f = 1.0 MHz

POUT = 1.1 W

f = 470 MHz

100

---

3.0

pF

11

dB
%

65

Pin = 0.1 W

A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.

REV. 0

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