Download as pdf or txt
Download as pdf or txt
You are on page 1of 9

2N2219A

2N2222A

HIGH SPEED SWITCHES


DESCRIPTION
The 2N2219A and 2N2222A are silicon planar
epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
2N2219A approved to CECC 50002-100,
2N2222A approved to CECC 50002-101
available on request.

TO-18

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS


Symb ol

Value

Un it

V CBO

Collector-Base Voltage (IE = 0)

75

V CEO

Collector-Emitter Voltage (IB = 0)

40

V EBO

Emitter-Base Voltage (I C = 0)

0.8

0.8
0.5

W
W

3
1.8

W
W

IC
P tot

T s tg
Tj
June 1999

Parameter

Collector Current
T otal Dissipation at Tamb 25 C
for 2N2219A
for 2N2222A
at T ca se 25 oC
for 2N2219A
for 2N2222A
o

Storage T emperature
Max. Operating Junction Temperature

-65 to 200

175

C
1/8

2N2219A/2N2222A
THERMAL DATA

R thj -case
R thj -amb

Thermal Resistance Junction-Case


Thermal Resistance Junction-Ambient

Max
Max

TO-39

T O-18

50
187.5

83.3
300

o
o

C/W
C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

10
10

nA
A

I CBO

Collector Cut-off
Current (IE = 0)

V CB = 60 V
V CB = 60 V

I CEX

Collector Cut-off
Current (VBE = -3V)

V CE = 60 V

10

nA

I BEX

Base Cut-off Current


(V BE = -3V)

V CE = 60 V

20

nA

IEBO

Emitter Cut-off Current


(I C = 0)

V EB = 3 V

10

nA

T case = 150 o C

V (BR) CBO Collector-Base


Breakdown Voltage
(I E = 0)

I C = 10 A

75

V (BR) CEO Collector-Emitt er


Breakdown Voltage
(I B = 0)

I C = 10 mA

40

V (BR) EBO Emitter-Base


Breakdown Voltage
(I C = 0)

I E = 10 A

V CE(sat)

Collector-Emitt er
Saturation Voltage

I C = 150 mA
I C = 500 mA

I B = 15 mA
I B = 50 mA

V BE(sat)

Base-Emitter
Saturation Voltage

I C = 150 mA
I C = 500 mA

I B = 15 mA
I B = 50 mA

0.6

DC Current G ain

I C = 0.1 mA
I C = 1 mA
I C = 10 mA
I C = 150 mA
I C = 500 mA
I C = 150 mA
I C = 10 mA
T amb = -55 oC

V CE
V CE
V CE
V CE
V CE
V CE
V CE

35
50
75
100
40
50

h FE

V
V

1.2
2

V
V

300

35

h fe

Small Signal Current


Gain

I C = 1 mA
I C = 10 mA

fT

Transition Frequency

I C = 20 mA
f = 100 MHz

C EBO

Emitter Base
Capacitance

IC = 0

V EB = 0.5 V

f = 100KHz

25

pF

C CBO

Collector Base
Capacitance

IE = 0

VCB = 10 V

f = 100 KHz

pF

R e (hie)

Real Part of Input


Impedance

I C = 20 mA
f = 300MHz

60

Pulsed: Pulse duration = 300 s, duty cycle 1 %

2/8

= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
=1V
= 10 V

0.3
1

V CE = 10 V
V CE = 10 V

f = 1KHz
f = 1KHz

V CE = 20 V

V CE = 20 V

50
75

300
375

300

MHz

2N2219A/2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbo l

Parameter

Test Con ditions

NF

Noise Figure

I C = 0.1 mA V CE = 10 V
f = 1KHz
R g = 1K

hie

Input Impedance

I C = 1 mA
I C = 10 mA

V CE = 10 V
VCE = 10 V

h re

Reverse Voltage Ratio

I C = 1 mA
I C = 10 mA

V CE = 10 V
VCE = 10 V

h oe

Output Admittance

I C = 1 mA
I C = 10 mA

V CE = 10 V
VCE = 10 V

t d

Delay Time

V CC = 30 V
I B1 = 15 mA

t r

Rise Time

V CC = 30 V
I B1 = 15 mA

t s

Storage T ime

t f
r bb C b c

Min.

Typ.

Max.

4
2
0.25

Unit
dB

8
1.25

k
k

8
4

10 -4
10 -4

35
200

S
S

IC = 150 mA
VBB = -0.5 V

10

ns

IC = 150 mA
VBB = -0.5 V

25

ns

V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA

225

ns

Fall T ime

V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA

60

ns

Feedback Time
Constant

I C = 20 mA VCE = 20 V
f = 31.8MHz

150

ps

5
25

Pulsed: Pulse duration = 300 s, duty cycle 1 %


See test circuit

3/8

2N2219A/2N2222A
Normalized DC Current Gain.

Collector-emitter Saturation Voltage.

Contours of Constant Narrow Band Noise Figure.

Switching Time vs. Collector Current.

4/8

2N2219A/2N2222A
Test Circuit fot td, tr.

PULSE GENERATOR :
tr 20 ns
PW 200 ns
ZIN = 50

TO OSCILLOSCOPE
tr 5.0 ns
ZIN < 100 K
CIN 12 pF

PULSE GENERATOR :
PW 10 s
ZIN = 50
TC 5.0 ns

TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 K
CIN 12 pF

Test Circuit fot td, tr.

5/8

2N2219A/2N2222A

TO-18 MECHANICAL DATA


mm

inch

DIM.
MIN.
A

TYP.

MAX.

MIN.

TYP.

12.7

MAX.

0.500

0.49

0.019

5.3

0.208

4.9

0.193

5.8

0.228

2.54

0.100

1.2

0.047

1.16

0.045

45o

45o

G
I

L
C

0016043

6/8

2N2219A/2N2222A

TO-39 MECHANICAL DATA


mm

inch

DIM.
MIN.
A

TYP.

MAX.

MIN.

12.7

TYP.

MAX.

0.500

0.49

0.019

6.6

0.260

8.5

0.334

9.4

0.370

5.08

0.200

1.2

0.047

0.9

0.035
45o (typ.)

G
I

P008B
7/8

2N2219A/2N2222A

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.

8/8

This datasheet has been download from:


www.datasheetcatalog.com
Datasheets for electronics components.

You might also like