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Datasheet 2N2222A
Datasheet 2N2222A
2N2222A
TO-18
TO-39
Value
Un it
V CBO
75
V CEO
40
V EBO
Emitter-Base Voltage (I C = 0)
0.8
0.8
0.5
W
W
3
1.8
W
W
IC
P tot
T s tg
Tj
June 1999
Parameter
Collector Current
T otal Dissipation at Tamb 25 C
for 2N2219A
for 2N2222A
at T ca se 25 oC
for 2N2219A
for 2N2222A
o
Storage T emperature
Max. Operating Junction Temperature
-65 to 200
175
C
1/8
2N2219A/2N2222A
THERMAL DATA
R thj -case
R thj -amb
Max
Max
TO-39
T O-18
50
187.5
83.3
300
o
o
C/W
C/W
Parameter
Min.
Typ.
Max.
Unit
10
10
nA
A
I CBO
Collector Cut-off
Current (IE = 0)
V CB = 60 V
V CB = 60 V
I CEX
Collector Cut-off
Current (VBE = -3V)
V CE = 60 V
10
nA
I BEX
V CE = 60 V
20
nA
IEBO
V EB = 3 V
10
nA
T case = 150 o C
I C = 10 A
75
I C = 10 mA
40
I E = 10 A
V CE(sat)
Collector-Emitt er
Saturation Voltage
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
V BE(sat)
Base-Emitter
Saturation Voltage
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
0.6
DC Current G ain
I C = 0.1 mA
I C = 1 mA
I C = 10 mA
I C = 150 mA
I C = 500 mA
I C = 150 mA
I C = 10 mA
T amb = -55 oC
V CE
V CE
V CE
V CE
V CE
V CE
V CE
35
50
75
100
40
50
h FE
V
V
1.2
2
V
V
300
35
h fe
I C = 1 mA
I C = 10 mA
fT
Transition Frequency
I C = 20 mA
f = 100 MHz
C EBO
Emitter Base
Capacitance
IC = 0
V EB = 0.5 V
f = 100KHz
25
pF
C CBO
Collector Base
Capacitance
IE = 0
VCB = 10 V
f = 100 KHz
pF
R e (hie)
I C = 20 mA
f = 300MHz
60
2/8
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
=1V
= 10 V
0.3
1
V CE = 10 V
V CE = 10 V
f = 1KHz
f = 1KHz
V CE = 20 V
V CE = 20 V
50
75
300
375
300
MHz
2N2219A/2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbo l
Parameter
NF
Noise Figure
I C = 0.1 mA V CE = 10 V
f = 1KHz
R g = 1K
hie
Input Impedance
I C = 1 mA
I C = 10 mA
V CE = 10 V
VCE = 10 V
h re
I C = 1 mA
I C = 10 mA
V CE = 10 V
VCE = 10 V
h oe
Output Admittance
I C = 1 mA
I C = 10 mA
V CE = 10 V
VCE = 10 V
t d
Delay Time
V CC = 30 V
I B1 = 15 mA
t r
Rise Time
V CC = 30 V
I B1 = 15 mA
t s
Storage T ime
t f
r bb C b c
Min.
Typ.
Max.
4
2
0.25
Unit
dB
8
1.25
k
k
8
4
10 -4
10 -4
35
200
S
S
IC = 150 mA
VBB = -0.5 V
10
ns
IC = 150 mA
VBB = -0.5 V
25
ns
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
225
ns
Fall T ime
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
60
ns
Feedback Time
Constant
I C = 20 mA VCE = 20 V
f = 31.8MHz
150
ps
5
25
3/8
2N2219A/2N2222A
Normalized DC Current Gain.
4/8
2N2219A/2N2222A
Test Circuit fot td, tr.
PULSE GENERATOR :
tr 20 ns
PW 200 ns
ZIN = 50
TO OSCILLOSCOPE
tr 5.0 ns
ZIN < 100 K
CIN 12 pF
PULSE GENERATOR :
PW 10 s
ZIN = 50
TC 5.0 ns
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 K
CIN 12 pF
5/8
2N2219A/2N2222A
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
0.49
0.019
5.3
0.208
4.9
0.193
5.8
0.228
2.54
0.100
1.2
0.047
1.16
0.045
45o
45o
G
I
L
C
0016043
6/8
2N2219A/2N2222A
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
0.49
0.019
6.6
0.260
8.5
0.334
9.4
0.370
5.08
0.200
1.2
0.047
0.9
0.035
45o (typ.)
G
I
P008B
7/8
2N2219A/2N2222A
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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