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  • Silicon Multiplier Varactor Diode: Description: 1N4388 Package Style Do-4

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    Erick Gabriel Aleman Alfaro
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    The 1N4388 is a high power silicon multiplier varactor diode with a DO-4 package style. It has a maximum reverse voltage of 100V, dissipation of 10W at 25C, and operating junction temperature range of -65C to +150C. Its key electrical characteristics include a reverse breakdown voltage ranging from 20-100V, a capacitance of 15-20pF when reverse biased at 6V and 1MHz, and a quality factor above 800 when reverse biased at 6V and 50MHz. It can multiply input frequencies up to 500MHz and output power levels up to 20W.

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    The 1N4388 is a high power silicon multiplier varactor diode with a DO-4 package style. It has a maximum reverse voltage of 100V, dissipation of 10W at 25C, and operating junction temperature range of -65C to +150C. Its key electrical characteristics include a reverse breakdown voltage ranging from 20-100V, a capacitance of 15-20pF when reverse biased at 6V and 1MHz, and a quality factor above 800 when reverse biased at 6V and 50MHz. It can multiply input frequencies up to 500MHz and output power levels up to 20W.

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    45 views2 pages

    Silicon Multiplier Varactor Diode: Description: 1N4388 Package Style Do-4

    Uploaded by

    Erick Gabriel Aleman Alfaro
    The 1N4388 is a high power silicon multiplier varactor diode with a DO-4 package style. It has a maximum reverse voltage of 100V, dissipation of 10W at 25C, and operating junction temperature range of -65C to +150C. Its key electrical characteristics include a reverse breakdown voltage ranging from 20-100V, a capacitance of 15-20pF when reverse biased at 6V and 1MHz, and a quality factor above 800 when reverse biased at 6V and 50MHz. It can multiply input frequencies up to 500MHz and output power levels up to 20W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 2

    1N4388

    SILICON MULTIPLIER VARACTOR DIODE

    PACKAGE STYLE DO- 4


    DESCRIPTION:
    The 1N4388 is a High Power Silicon
    Multiplier Varactor Diode.

    MAXIMUM RATINGS
    IF

    200 mA

    VR

    100 V

    PDISS

    10 W @ TC = 25 C

    TJ

    -65 C to +150 C

    TSTG

    -65 C to +175 C

    JC

    10 C/W

    1 = Anode
    2 = Cathode

    CHARACTERISTICS
    SYMBOL

    TC = 25 C

    TEST CONDITIONS

    VBR

    IR = 10 A

    CT

    VR = 6.0 V

    f = 1.0 MHz

    VR = 6.0 V

    f = 50 MHz

    MINIMUM

    TYPICAL

    PIN = 30 W

    FIN = 150 MHz

    20

    15

    A D V A N C E D S E M I C O N D U C T O R, I N C.
    7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004

    pF
    ---

    800

    Specifications are subject to change without notice.

    UNITS
    V

    100

    fin
    Pout(X3)

    MAXIMUM

    500

    MHz

    20

    REV. A

    1/1

    This datasheet has been downloaded from:


    www.DatasheetCatalog.com
    Datasheets for electronic components.

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