Bipolar transistor

A bipolar junction transistor (BJT or bipolar transistor) is a type of transistor that relies on
the contact of two types of semiconductor for its operation. their operation involves
both electrons and holes. These two kinds of charge carriers are characteristic of the two kinds
of doped semiconductormaterial; electrons are majority charge carriers in n-type semiconductors,
whereas holes are majority charge carriers in p-type semiconductors. In contrast, unipolar
transistors such as thefield-effect transistors have only one kind of charge carrier.
Field-effect transistors ( FETs)
The field-effect transistor (FET) is a transistor that uses an electric field to control the shape
and hence the electrical conductivity of a channel of one type of charge carrier in a
semiconductor material. The FET has several forms, but all have high input impedance. While
the conductivity of a non-FET transistor is regulated by the input current (the emitter to base
current) and so has a low input impedance, a FET's conductivity is regulated by a voltage applied
to a terminal (the gate) which is insulated from the device. The applied gate voltage imposes an
electric field into the device, this in turn attracts or repels charge carriers to or from the region
between a source terminal and a drain terminal. The density of charge characters in turn
influences the conductivity between the source and drain.
High electron mobility transistor (HEMTs)
A High-electron-mobility transistor (HEMT) is a field-effect transistor incorporating a junction
between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a
doped region (as is generally the case for MOSFET). HEMT transistors are able to operate at
higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in
high-frequency products such as cell phones, satellite television receivers, voltage converters,
and radar equipment.
Varactor multipliers