SOLUTIONS TO TUTORIAL 2 ‘What is the one important difference between the characteristics of a simple switch and those of an ideal diode? ‘The most important difference between the characteristics of a simple diode and simple switch is that the switch, being mechanical, is eapable of conducting current in either direction while the diode only allows charge to flow through the element in one direction, ‘What isthe value of the barrier potential for silicon and germanium? O.7V(si) 03V(Ge) ‘Compare silicon and germanium diodes. For most applications, the silicon diode is the device of choice due to its higher temperature ‘capabili Ge typically has a working limit of about 85 degrees centigrade while Si can be used at temperature approachi Sidiodes also have a Ge diodes are the better device for some RF small signal applications Barrier potential for Si is 0.7V and for Ge is 0.3V 1¢ 200 degrees centigrade igher current handling capacility V-I characteristics for this 2 s/c is also different. Draw the V-I characteristies of an ideal dode. What are the values of forward and reverse resistance of the diode under ideal conditions? Ry=00, Reno Discuss the temperature effects on a diode, For a FIB diode, as temperature is increased, the barrier potential decreases, the forward current increases For a RUB diode, as temperature increased, the reverse current increases, aR OTEBENE 1124-Hlecnones Engineering Fundamentals FRESE, KUTKM 6. Determine the static or de resistance of the commercially available diode of Fig 2.1 ata forward current of 2mA. From graph, Vp 0.66V if p= 2mA, Ry= Vo/lp= 0.66V/2mA = 3300 7. Determine the static or de resistance of the commercially available diode of Fig 2.1 at a reverse voltage of -10V. How does it compare to the value determined at a reverse voltage of -30V? From graph, when Vy=-10V, Ip=Is=-0.10A, Ruc=Voiln = 10V/0.1A =_100MO When Vp = -30V, Ip = Is =-0.1)0A, Ryc=Vo/lp = 30V/0.1nA = 300MO_ 8, Calculate the de and ae resistance for the diode of Fig 2.2 at a forward current of 10mA and compare their magnitude. Ip=10mA, Vp= 0.76 V Vv, _ 0.76 V bo 162 7, 10mA te Al oo y V _ 0.03 V 32 Al, 15mA—SmA 10mA Roc >> ra Wak OneBENE 1/23-bleirones Engineering Funlamontole, FKEKK, KUT, 25 - ng Ay i > a ae SAL Pee ene eye eee Ba eee - a OPO OT Os 06 OF GR OO Trevi Avy Fig2.2 WaT OTe