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    Ee614 HW1

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    peeyush_tapadiya
    The document contains 4 questions regarding semiconductor devices: 1) A device with a net generation rate is given, and the student is asked to sketch the electron and hole currents within a spatial interval under steady state conditions. 2) A device with an applied electric field is given, and the student is asked to determine the current under steady state conditions. 3) The student is asked how a given potential profile could be created under equilibrium conditions. 4) A device with a hole current and undoped region is given, and the student is asked to determine the variation of hole density and electric field.

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    Ee614 HW1

    Uploaded by

    peeyush_tapadiya
    20 views4 pages
    The document contains 4 questions regarding semiconductor devices: 1) A device with a net generation rate is given, and the student is asked to sketch the electron and hole currents within a spatial interval under steady state conditions. 2) A device with an applied electric field is given, and the student is asked to determine the current under steady state conditions. 3) The student is asked how a given potential profile could be created under equilibrium conditions. 4) A device with a hole current and undoped region is given, and the student is asked to determine the variation of hole density and electric field.

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    solid state devices

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    EE614_HW1

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    The document contains 4 questions regarding semiconductor devices: 1) A device with a net generation rate is given, and the student is asked to sketch the electron and hole currents within a spatial interval under steady state conditions. 2) A device with an applied electric field is given, and the student is asked to determine the current under steady state conditions. 3) The student is asked how a given potential profile could be created under equilibrium conditions. 4) A device with a hole current and undoped region is given, and the student is asked to determine the variation of hole density and electric field.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    20 views4 pages

    Ee614 HW1

    Uploaded by

    peeyush_tapadiya
    The document contains 4 questions regarding semiconductor devices: 1) A device with a net generation rate is given, and the student is asked to sketch the electron and hole currents within a spatial interval under steady state conditions. 2) A device with an applied electric field is given, and the student is asked to determine the current under steady state conditions. 3) The student is asked how a given potential profile could be created under equilibrium conditions. 4) A device with a hole current and undoped region is given, and the student is asked to determine the variation of hole density and electric field.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    of 4

    Q.

    1 Determine the net current density for the semiconductor


    device shown below in which there is a net generation rate .
    Sketch the electron and hole currents within the spatial interval
    (x1,x2). Assume steady state condition.
    GN RN = 1022 cm 3 s 1 = GP RP

    x1=0
    JP(0)=0

    B. Mazhari, IITK

    x2=20m
    JN(x2)=0

    27
    G-Number

    Q.2 Determine current (under steady state) for the condition


    Shown below:

    po

    F~0

    F~10 V/cm
    x

    x=0

    B. Mazhari, IITK

    W1=100nm

    W2=300nm

    28
    G-Number

    Q.3 How can the following potential profile be created under


    equilibrium conditions?

    (x)
    0.8V
    0.15V
    0V

    B. Mazhari, IITK

    29
    G-Number

    Q.4 For the device shown below, determine variation of


    hole density and electric field.

    J=JP=JP(drift)
    n~0, no doping

    B. Mazhari, IITK

    30
    G-Number

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