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  • Lecture 7: Electrostatics and IV Characteristics of P-N Diode

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    PranaySingireddy
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    This document summarizes a lecture on the electrostatics and I-V characteristics of P-N diodes. It covers the basics of P-N junctions, how to draw their band diagrams, their behavior under equilibrium and non-equilibrium conditions, and applications such as rectifiers and solar cells. The key points are that a P-N junction forms a depletion region due to diffusion of holes and electrons, and under a forward bias this region narrows allowing current to flow via drift and diffusion. Under a reverse bias the region widens blocking current. The I-V curve follows an exponential relationship for an ideal diode.

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    semiconductors

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    PN Diode Fall'15

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    This document summarizes a lecture on the electrostatics and I-V characteristics of P-N diodes. It covers the basics of P-N junctions, how to draw their band diagrams, their behavior under equilibrium and non-equilibrium conditions, and applications such as rectifiers and solar cells. The key points are that a P-N junction forms a depletion region due to diffusion of holes and electrons, and under a forward bias this region narrows allowing current to flow via drift and diffusion. Under a reverse bias the region widens blocking current. The I-V curve follows an exponential relationship for an ideal diode.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pptx, pdf, or txt
    11 views41 pages

    Lecture 7: Electrostatics and IV Characteristics of P-N Diode

    Uploaded by

    PranaySingireddy
    This document summarizes a lecture on the electrostatics and I-V characteristics of P-N diodes. It covers the basics of P-N junctions, how to draw their band diagrams, their behavior under equilibrium and non-equilibrium conditions, and applications such as rectifiers and solar cells. The key points are that a P-N junction forms a depletion region due to diffusion of holes and electrons, and under a forward bias this region narrows allowing current to flow via drift and diffusion. Under a reverse bias the region widens blocking current. The I-V curve follows an exponential relationship for an ideal diode.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pptx, pdf, or txt
    of 41

    Lecture 7: Electrostatics and

    IV Characteristics of P-N Diode


    ECE5590: Nanoscale Devices and
    circuits
    Mostafizur Rahman
    rahmanmo@umkc.edu

    Recap

    R-G, Drift, Diffusion


    Continuity Equation
    P-N Junction

    Outline

    P-N Junctions
    Drawing Band Diagram
    Solution in Equilibrium
    Non-Equilibrium Conditions (I-V)
    Summary

    ECE5590 Fall 2015 MR

    ECE5590 Fall 2015 MR

    ECE5590 Fall 2015 MR

    P-N Junction Devices..

    ECE5590 Fall 2015 MR

    P and N doped Materials

    ECE5590 Fall 2015 MR

    Time < 0

    Time < 0: Pieces separated

    P-type piece

    ECE5590 Fall 2015 MR

    N-type piece

    At time = 0, slam the two pieces together

    At time = 0, slam the two pieces together

    ECE 663

    Hole gradient Gradients

    drive diffusion

    Jp, diffusion = -qD p dp/dx = current right, holes right


    Electron gradient

    Jn,diffusion = -qD n dn/dx = current right, electrons


    left right

    Depletion
    Region

    Depletion Approximation

    ECE5590 Fall 2015 MR

    13

    Electrostatics
    Poissons Equation

    ECE5590 Fall 2015 MR

    14

    ECE5590 Fall 2015 MR

    15

    Drawing Band diagram

    ECE5590 Fall 2015 MR

    16

    Electric Field is Discontinuous for


    Heterojunction

    ECE5590 Fall 2015 MR

    17

    Homojunction

    ECE5590 Fall 2015 MR

    18

    Built-in Potential (Vbi)

    ECE5590 Fall 2015 MR

    19

    How wide is the depletion region?

    Depletion Approximation-step junction

    ECE 663

    Solution for E

    ECE5590 Fall 2015 MR

    22

    Solution for E

    ECE5590 Fall 2015 MR

    23

    Solution for V

    ECE5590 Fall 2015 MR

    24

    Depletion Width

    ECE5590 Fall 2015 MR

    25

    I-V Characteristics

    ECE5590 Fall 2015 MR

    26

    ECE5590 Fall 2015 MR

    27

    Applying a Bias

    ECE5590 Fall 2015 MR

    28

    Depletion Width

    Would current flow? Diffusion/Drift?


    ECE5590 Fall 2015 MR

    29

    ECE5590 Fall 2015 MR

    30

    Effect of Bias

    ECE5590 Fall 2015 MR

    31

    ECE5590 Fall 2015 MR

    32

    I-V Curve for Ideal Diode

    I I0 (eV

    ECE 663

    kT
    V0
    q

    / V0

    1)

    Ideal P-N Junction Diode

    Assumptions:

    Steady-State conditions
    Non-degenerate doping
    One-dimensional
    Low Level Injection
    Only drift, diffusion,thermal R-G (no photons)

    ECE 663

    ECE5590 Fall 2015 MR

    35

    Applications

    ECE5590 Fall 2015 MR

    36

    ECE5590 Fall 2015 MR

    37

    Solar Cells

    ECE5590 Fall 2015 MR

    38

    Solar Cells

    ECE5590 Fall 2015 MR

    39

    Solar Cells

    ECE5590 Fall 2015 MR

    40

    Summary
    P-N diodes are simplest
    semiconductor devices
    Operation lies in fundamental of
    physics
    Useful for various applications

    ECE5590 Fall 2015 MR

    41

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