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Spring 2015

Indian Institute of Technology, Kanpur


Department of Electrical Engineer
EE 698I Solar Photovoltaic Technologies

Simulation Assignment 1
Due: Friday, 13th March, 2015
Simulate a simple resistor like device in Silvaco 2D simulation software. The resistor is doped
silicon. The length of resistor is 'L' and width 10 microns, doped uniformly using p-type dopants.
Dopant concentration is 'A x 10 ^ B' (Number/cm^3).
where length L, concentration parameters A and B are calculated using following rule.
say your roll number is 11180. then
L = ( 11180 % 6 ) + 5
=2+5
= 7 microns
A = 1st digit from left * 10 + 2nd digit from right
= 1 * 10 + 8
= 18
B = ( 11180 % 5 ) + 13
= 13
so the resistor made by student whose roll number is 11180 will be 7 micron long, 10
micron wide and doped with p-type dopant having 18 * 10 ^ 13 cm^-1 concentration.
lets take another example
say a student has roll number 14104067, then
L = ( 14104067 % 6 ) + 5
=5+5
= 10 microns
A = 1st digit from left * 10 + 2nd digit from right
= 1 * 10 + 6
= 16
B = ( 14104067 % 5 ) + 13
= 2 + 13
= 15
so the resistor made by student whose roll number is 14104067 will be 10 micron long, 10
micron wide and doped with p-type dopant having 16 * 10 ^ 15 cm^-1 concentration.
a) Find the carrier density (electron density, hole density and total density) along y-axis
(vertically) at middle of device.
b) Illuminate the device with intensity of 1 sun and record the carrier density (electron density,
hole density and total density) at the middle of device.
c) Find the resistivity of the device at Vapplied = 0.5Volts

23.02.2015

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