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Linh Kiện Điện Tử - Klaus Beuth
Linh Kiện Điện Tử - Klaus Beuth
Linh Kiện Điện Tử - Klaus Beuth
Klaus Beuth
Bauelemente
18., berarbeitete Auflage
Der Lizenzgeber (Vogel Industrie Medien) bertrgt dem Lizenznehmer (Higher Educational
and Vocational Book JSC Hanoi) das ausshliesstiche Recht zur Verffentlichung in Buch
form dis Verkes in Vietnam.
Cun sch c xut bn theo hp ng chuyn nhng bn quyn gia Cng ty c phn
Sch i hc - Dy ngh, Nh xut bn Gio dc v Nh xut bn Voge Bucheverlag
Wrzburg.
M s: 7K755Y 8 - DAI
LI G l l THIU
Cng vi cu"n *'Mch in t, cun "Linh kin in t" hp thnh hai
trong b sch quan trng nht phc v cho lnh vc o to ngnh in t
tin hc - in t vin thng c NXB Vogel Buchverlag" - Cng ho
Lin bang c xut bn.
CuVi "Linh kin in t c chng ti la chn mua bn quyn v
dch sang ting Vit v y l cu"n sch c ni dung tt, c xut bn "n
ln th 18 v c nhiu nc nh: Trung Quc, n ... mua bn quyn.
Cun Linh kin in t" gm 14 chng, ni dung xuyn su"t ca 14
chng l nhng vn r't c bn v cc linh kin in t, t cu to, c
dim cng ngh ch to, nguyn l lm vic, phm vi ng dng c
cc tc gi trnh by mt cch ngn gn, d hiu v sc tch. Kt thc mi
chng u c cu hi, bi tp gip ngi hc n tp v kim tra nhng
ni dung hc. Sch s l gio trnh, ti liu tham kho b ch cho nhiu
i tng v trnh khc nhau trong lnh vc in t vin thng, o
lng iu khin, t ng ho...
Vic chuyn i ngn ng t ting c sang ting Vit cng nh la
chn mt h thng k hiu c chun ho sao cho ph hp v truyn
ti trung thnh nhng ni dng ca bn gc sang ting Vit mt cch n
gin, d hiu gp khng t kh khn, nhng ngi dch l nh gio c
nhiu kinh nghim ging dy mn "Linh kin in t v c o to
Cng ho Lin bang c nn nhi vn phc tp gp phi trong qu
trnh dch c khc phc.
Mc d ngi dch c nhiu c" gng, nhng chc chn khng trnh
khi cn nhng sai st, mong bn c thng cm v mi kin ng gp
xin gi v Cng ty Sch i hc - Dy ngh, Nh xut bn Gio dc 25,
Hn Thuyn, H Ni.
Chng ti hy vng cun "Linh kin in t s l ti liu b ch vi
ihng ai hc tp v quan tm "n lnh vc k thut in t.
Chng ti s ti"p tc tim kim cc gio trnh, sch tham kho c ni
dung t"t c xut bn cc quc gia c nn gio dc truyn thng, tin
tin khc nhau chuyn sang ting Vit gip cho ngun ti liu phc v
Dy v Hc thm phong ph, tip cn trnh Dy v Hc tin tin, p
ng cc y cu ngy cng nng cao ca s nghip i mi gio dc.
Nhn dp xut bn ln u cuh Linh kin in t" c dch t ting
c sang ting Vit, chng ti xin gi li cm n n Nh xut bn Vogel
Buchverlag Cng ho Lin bang c, ti cc dch gi v s chia s trong qu
trnh hp tc cng nh li cm n chn thnh ti s quan tm, n nhn v
nhng ng gp ca bn c gn xa. Mong rng s hp tc s c tip tc.
NH XUT BN GIO DC
LI M U
Chng 1
%>
r
J
\
=:/llf)
/
{
V
\
\
/
y
U2
Hnh 1.2. th quan h ph thuc
ca
vo Uj.
\
r - i / f V
i
\\ / = t)
i'/"
/
*'
/
\
N
/
f
VV
f
t
~Ti'~
/
\
t
_ i
--</
V
------------im sng
Sng in t
^ 2
Hnh 1.4. Cu to c bn ca
mt ng tia in t.
u vo
-o
~o
-o
u ra
r*
N
/ \
\
c:'-
V
Hnh 1.11. th in p
khi dch ng (ln).
Hnh 1.12. th in p
khi dch ngang (phi).
Nu
>
\
......
Oms
Gi tr chun theo trc ngang l lOms/1 thang chia (tia qut ngang
c 1 n v thang chia cn 1 thi gian l lOms).
Vic chun thang chia l quan trng nht trong vic o c cc
tham s"ca tn hiu Y ang quan st.
V i du: B lm lch Y ca mt oxylo c t lOmV/1 n v
= 20mV
1 5 0 .IS
2.
Nhim v ca b khuch i Y.
3.
4.
5.
6.
7.
8.
11
Chng 2
Trng hp in hnh
l tn li mi quan h
tuyn tnh I = u vi h s
R
u
R =
c nh ngha l
I
in tr thun ca mt
phn t v quan h hm s
ny l nh lut m cho
mt in tr thun.
c tuyn I - u i vi
mt s in tr c cho
trn hnh 2.2. Mc dc
hay tga c nh ngha l
din dn ca phn t.
AI
1
tga = - = = G
AU R
in tr tuyn tnh cn
c gi l in tr Omc,
n tun theo nh lut Om.
12
AU
AI
trong mt vng
c NH
E 12
; | | a |;
'";.!!
(iio*/.) m 'i
E 2-4
( 5V.)
6,8
1,8
1.2
1.5
2.2
2,7
3,3
5.6
3,9
3,6 3.9
,3
6:8
8,2
nhau b" tr trn thn in tr. Gi tr sai s" cng c th hin bng
vng mu hoc ch ci k hiu cul cng trn thn in tr (xem
bng mu quy c).
Cc lot in tr m k hiu E6 c sai s 2 0 % vi cc gi tr
danh inh l:
1Q
1.5Q
2.2Q
3 ,3f
4,7Q
6.81
8.1Q
10Q
15Q
220
33Q
47Q
6 8 f
81Q
100Q
150Q
220Q
330Q
470Q
680Q
810Q
1kQ
1,5kQ
2,2kQ
3,3kQ
4,7kQ
6,8kQ
8,1kQ
10kQ
15kQ
22kQ
33kQ
47kQ
68kQ
81kr2...v.v...
14
Cng sut cho trong di anh nh: 0,05W; 0,1W; 0,25W; 0,5W;
1 W; 2W; 3W; 6 W; 10W; 20W xt nhit mi trng, v d 50c,
khi nhit mi trng cao hn, gi tr cng sut danh nh cho
ca din tr b gim.
BNG M MU QUY NH QUC T CHO LOI 4 VNG MU
(E6, E12, E24)
Mu
Khng mu
Bc nh
Vng ng
Vng 1
gi tr s
th nht
Vng 2
gi tr s
th hai
Vng 3
gi tr h s
thp phn
Vng 4
sai s'
20%
10%
5%
10-^Q
10- Q
en
10 Q
Nu
1
2
3
1
2
10^ Q
1%
2%
10^Q
10^Q
lO-'Q
5
6
10Q
Xanh da tri
5
6
Tm
10^Q
Xm
10Q
Trng
10Q
Da cam
Vng
Xanh l
0,5%
10Q
15
V d:
Vng
4
Xanh da tri
6
Nu
1
Tm
7
Xm
8
Xanh l
5
10^Q
Xanh da tri
10 Q
Da cam
lO^Q
Vng ng
5%
= 68MQ 20%
20%
Bc
+ 10%
= 15kQ 10%
Mu
Vng 1
gi tr s
th nht
Khng mu
Bc
Vng ng
en
Nu
Da cam
Vng
Xanh l
Xanh da tri
Tm
Xm
1
Trng
Vng 2
gi tr s
th hai
= 4700Q 5%
Vng 3
gi tr s
th ba
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
5 VCH MU
Vng 4
h s
ly tha
Vng 5
sai s
1 + 20%
10%
5%
10-^ Q
1 0 -'Q
10Q
10 Q
10^Q
1%
2%
lO^Q
0,5%
10 Q
10'
10Q
10Q
V d:
Nu
1
Cam
3
Trng
9
Xm
8
Xm
8
Tm
7
Tm
7
Xanh l
5
Xanh da tri
6
H S thp phn
S gi tr 2^
\
/ Sai s
S gi tr 1'
Da cam
10^Q
Vng ng
1 0 -'Q
Bac
10-^ Q
2%
Nu
1%
Xanh l
5%
= 187KQ 2%
= 38,5 n 1%
= 9,76 Q 0,5%
S gi tr 3
H s thp phn
S gi tr 2
/ Sai s
r
------- \
<\J)
CTJ roO cn
c
cc c c
'O 'O'O 'O 'P
> >> > >
'I -
'T- C\J co
CTJCJ) ) OD
cccc
> > > 'O
>
-o -o
16
BNG CC GI TR CHUN
c a i n t r n h m
E48 E96 E48 E96 E48 E96 E48 E96 E48 E96 E48 E96 E48 E96 E48 E96
100
105
11Q
115
121
127
100 133
133 178
178 237
237 316
316 422
750
102
137
182
243
324
432
768
105 140
140 187
187 249
249 332
332 442
787
107
143
191
255
340
453
806
110 147
147 196
196 261
261 348
348 464
825
113
150
200
267
357
475
845
'|15 154
154 205
205 274
274 365
365 487
866
118
158
210
280
374
499
887
121 162
162 215
215 287
287 383
383 511
909
124
165
221
294
392
523
931
127 169
169 226
226 301
301 402
402 536
953
130
174
232
309
412
549
976
576
604
634
665
698
732
2.2.2. Cc dng cu to ca in tr
2.2.2.1. in tr lp
Trn thn li "ng bng g"m s hay thy tinh, trong chn khng,
mt lp mng (t 0 ,0 0 1 p,m n 2 0 |.im) vt liu dn in c ph ln
nh phng php cng ngh nhng hay khuch tn hdi. Cc loi vt
liu lm lp in tr thng dng l than, kim loi (k c kim loi
him) hay oxyt kim loi. Gi tr in tr ph thuc vo vt liu c
chn, vo thi gian bm ph (hay dy lp bm ph). Cc hnh dng
lp ph kiu bc bay trong chn khng c cho trn hnh 2.7 hoc 2.8.
Cu hnh lp in tr cho trn hnh 2.9. Bn ngoi phn a chn ra
thng dng ni kim loi chp hai u, ph cc hp cht chng chy,
chng xm thc ca mi trng v n nh v c hc. Gn y cc
in tr c ch to cu hnh a chn ra v mt pha (hnh 2.11).
Thn tr gm c thay bng mt b mt gm trn cho lp vt
liu b"c bay bm trn b mt. Hin nay cng ngh ch to in tr
thc hin lp rp ngay vi cc phn t lin quan theo mt mt phng
xc nh (gi l cng ngh lp rp b mt SMD - Surface Mounted
Device). Hnh 2 . 1 2 d ch ra cu to in hnh ca mt in tr SMD
trn b mt mt phin dn in.
2-LKINT
17
C B H H
in tr khng c ni np v mt ct ca n
i[ifin]n
" t cc ng dc dc
\in tr ni np kim io
Hnh 2.8. in tr vi cc lp gp khc
18
Oti
in tr
ng d?n
y
Hnh 2.13a. Thn in tr
trong k thut lp dy
19
Khi di hi cng
suTt rt lc)n (hng
chc vv hay ln na),
cc in ir dy qun
dng ch nht c s
dng. Cc ng din
tr dy qun thng
dng dc cho trn
hinh 2.15, dc bo v
chng m. clng chy,
chng xm thc ca
mi trng hay bn v
c hc.
- -.............................
<>
Ni kiu kp
It
Ni kiu hn
hnh 2.18, hnh 2.19 hay hnh 2.20. cc c tnh tuyn tnh, vi
gia s ml gc quay c" dinh hay gia s ml di ng ray c" dnh
lun nhn dc mt gi tr din tr khng i. Cc dng bin i
phi Luvn tnh (hm exp, logarit, ch s...) c cho trn cc hnh
2.19 v 2.20.
20
K hiu
^Imax' ^2max
^Imin ^2min
ng rnh in tr
Con chy
-Ro
R=
Hnh 2.18. ng cong gi tr in tr ph thuc vo v tr con chy.
21
22
~
+ AR
R],; = R2I) AR
Rvv
hoc
Rvv
R \v
R k,
c:
Rvv = R 2 (1 + aA u )
hoc
23
Nu in tr c ch to
t cc loi vt liu c h s" a
ln. khi ch n g c gi l
10 20 30 40 50 60 70 80 90 100
2.5.1.2. G tr nh mc v gi tr gii hn
/ k
(sa u k h i n g n g t c ng
24
v i c
cc i
2.5.1.3. ng dng
10'
10*
10^
10-
10^
10 '
20
100
200
25
- i> -
^31^. f
Ya nhit khi ng
Ra = R (i^a)
Ron = R (25"C)
U.NJ nhit danh nh
R
ttu
('->n )
h s nhit ( dc c tnh R
V))
Ur nhit cu ca di lm vic
R,.: = R (u,.;)
26
hay
I=
p; H s' iu chnh
C: Hng sph thuc vo kch thc hnh hc ca VDR.
Hng s c c g i tr t 15 n 5000 c xc n h khi cho dng
in bng lA chy qua VDR.
H s' hiu chnh p quyt nh dc ca c tuyn (nm trong
di t 0,15 n 0,40).
28
Tham s gii hn c
1mix- Cng sut tl a cho php.
Umax-: N hit ti a cho php.
Cc tham s' nh mc dc xc nh khi tc ng
in p mt chiu ln VDR v c tnh Von-Ampe
W/H
-c z l-
c = 1 0 0 ; = 0 ,2 .
V d: Cho VDR c
Hy tnh gi tr in tr ca VDR ti cc in p:
a) lOV; b) 25V; c) 50V; d) 75V: e) lOOV?
/
a)
1=
1=
R=
c)
1=
lOV
lOiA
25
100,
= IMQ
. A = 0,25'l A = 0,977mA.
25V
0,977mA
50
= 25,59kQ
A = 0,5^ A = 31,25mA.
-
, 100,
R=
d)
A = 0 , 1'' . A
.100
R=
b)
10 V
1=
R=
50V
31,25mA
Ic ;
= l,6 k Q
lio o j
75V
237,5mA
I.2
. A = 0,75" . A = 237,5mA.
= 316Q
29
100
c)
0,2
100^
R=
A = l l A = lA.
lOOV
= lOOQ
lA
Ub
II
u
30
CU HI N TP - BI TP
1.
2.
3.
4.
5.
6.
7.
8.
Hy nh ngha in tr tuyn
tnh v in tr phi tuyn.
in tr vi phn r ca mt linh kin
cho bit thng tin g v linh kin?
Lot in tr chun theo quy c
quc t l g?
Hy lit k cc gi tr in tr
chun theo lot mu E 12 nm
gia 2 gi ti' 400Q v lOki}.
Trong lot mu E96, vi di gi tr
t 100f n lOOOQ c bao nhiu
gi tr chun? Sai s ca lot E96?
Hnh 2.34. c tuyn ca mt
I vi cng sut t a cho php, hy
nhit in tr lnh.
lit k cc gi tr chun cho ti 20 W.
Vi quy c m vch mu qu"c t, chailoi c sdng l 4
vch v 5 vch. Hy nu ngha cc vng mu trong
miloi
chun ang s dng.
Hy xc nh tr s" cc din tr v sai s tng ng ca n vi cc
m m u c c n h sau:
Vng 1
Vng 2
Vng 3
a)
Nu
en
Cam
Vng
b)
Xm
Nu
Bc
c)
Vng
Vng
d)
Vng
Tm
Da tri
Khng mu
e)
Nu
L cy
Bc
Bc
Vng 1
9.
Vng 4
Vng 2
Vng 3
Vng 4
Vng 5
f)
L cy
Cam
Da tri
Bc
g)
Xm
Xm
Tm
Da tri
Nu
h)
Tm
Vng
en
i)
Nu
Cam
Xm
Vng
Nu
k)
Vng
Cam
Nu
Nu
Hy nu m mu tng ng ca cc in tr sau:
a) 3,740 1%:
b) 681kQ 2%;
c) 114kQ 0,5%
d) 2,46MQ 0,5%;
e) 46,4kQ 1 %;
) 7150Q 2%
31
ca
in tr dy qun?
32
s" v c h d ca p h n
Chng 3
T IN V CGN D
3.1. IN DUNG
33
= Ss = Siemens
L cc n v nh hn ca Fara.
Mt phn t c in dung 1 Fara khi vi mt in p IV t ln,
vt th s nhn c mt in tch 1 Culon.
in dung ch hnh thnh gia 2 vt th dn in nm cch ly
nhau v in. Hai vt th c th rt ln nh 1 v tinh v qu t hay
rt nh nh hai si dy dn song song cnh nhau.
in dung l mt thuc tinh di tc ng ca mt in p, cc in tch
s c np.
C: in dung ca t
e: hng s in mi Eo = 8,85. 10'^F/m
8,.: h s" in mi
A: din tch hai bn kim loi song song i din,
a: khong cch gia hai bn kim loi.
c c ln thng dng hai l kim loi cch ly nhau bng mt
lp cch in mng v c qun li song song nhau.
MtphngA
Lap in mi
3.2. T IN
3.2.1. Vn chung
34
* Di nhit lm vic
* Thi gian s dng
* tin cy khi lm vic
* H s tn hao
35
\
S gi tr th 1
S gi tr th 2
\ \
\ \
\ in p danh nh
= (
Sai s
-4
I)
il
H s thp phn
Mu
Vng 1
Vng 2
S th 1
S th 2
Vng 3
S th 3 h
s nhn
in p
danh nh
5000V
10*^
10%
2000V
10*^
5%
1000V
1%
100V
200V
300V
400V
Bc
Vng
en
Nu
Cam
Vng
1
2
3
4
1
2
3
4
10"pF
10' pF
10'pF
10"pF
10"pF
Xanh l
5
6
7
8
9
5
6
7
8
9
10"pF
10"pF
10'pF
10pF
10"pF
Vi
Sai s
20%
Khng mu
Xanh da tri
Tm
Xm
Trng
Vng 5
V n g 4
2%
0.5%
500V
600V
700V
800V
900V
36
Lp in mi
v, chng chy.
Ngy nay lp cch in
Hinh 3.5. Cu to t giy hoc t mica.
thng c dng l lp vt liu
nhn lo (mica, polyme) c nhiu u diin hdn giy: kch thc gn
hn, gi tr in dung c v din p chu ng n nh hn. c bit
vt liu polystyrol c nhiu u dim v tn hao in mi thp, h s
n h it ttc m gi tr n h thch hp cho vic s d n g t n s cao v d
37
V tr nh thng
Lp klm loi
1"
Lp in mi
Vng c mt
dng in ln
b bc l
Hi
Cht in mi
Lp kim ioi
(in cc th
nht ca t)
(in cc th
hai ca t)
Lp in mi
38
3.2.2.5. T in ho
Cc t in ho dng dung dch in ho lm 1 trong hai in cc
ca t, in cc kia l kim loi cu to dng mng (hnh 3.7 v 3.8),
ngn cch 2 in cc ny vi lp in mi. Dung dch in ho l mt
loi c h t ln g dn in, m t s" trng hp dng v t liu bn dn in
\
Lp in ml
Lp in mi rn
Phn ng
Phn tnh
Roto
Phin stato
Phn tnh
(khng nhinthy)
Roto
SQtO
thay i in dung
ca t trong 1 gii hn
nh (vi iu chnh) nhm
t xoay dng Trim hnh
3.16 c s dng.
Phn ng
41
3.3. T IN
IN
TRONG MCH
1 CHIU
3.3.1. Np in cho t
Rv
Uh-*-
(R = Rv Ri l in tr chung ca mach)
R '
T c bt u c np, Uc tng, tr khng ca t tng theo UcRc - , dng in trong mch b gim dn. Hnh 3.18 th hin
quan h dng I v p c theo thi gian t sau lc s ni mch (t = 0).
Thi gian cn thit cho vic np in ca t ph thuc vo dng
in, tc l ph thuc vo R v c. Tch s" R .c quyt nh ti t"c
np in ca t v c gi l h n g s" thi g ia n T.
t=
R.c
63
(chnh xc 63,2*/,) 60 /
37 .xov.
(chnh xc 36,8*/.)
20V.
5r
W: in nng tr trong t
C: in dung ca t
U: in p trn t
3.3.3. S phng in ca t
c HUc
i
Ne dt in p xoay
chi ln t. n s c
np v phng in lin
tie"p. V d in p xoav
chiu l hnh sin, trong
1/4 chu k u, t c
np, phn t tip sau
n phng in. Sang bn
k m, ti phn t th 3
t
li
np
c4=
V
Q_
03-
C)
'Q
.c
CL
vy
QQ.
TO-
theo
27i.f . c
1
Xc =
t .c
44
_________________________ _________________________
271.f . c
6 , 2 8 . 10 ( - ) . 2 , 2 . 1 0 (Ss)
x .=
1000
Q = 72,3Q
6 >2 8 . 2,2
th, thi gian Uc(t) v I{t) cho trn hnh 3.23, th vect Uc, I
cho trn lnh 3.24.
U
/1 >
X y *
Uc
R
^
c= =
Uc
Uc'
^ V'
tg 5: h s tn hao.
. _
Uc
I.R
I.x ^
Xc. H
hay
^C2
1
^C3
Ci = :.,
- = l _ + - _ l _ + _ l _
coC,J
coC,
(0
c Id
coCt
coC,
J_r 1 + -----h
1 1
co
46
C2-h)Cc2
C3=hxc3
C,=47nF
47nF.10nF
470
c ,+ c ,
47nF + 10nF
57
C2=10nF
nF - 8,25nF
2 8
. Mc ni
tip 2; t in.
X C,J
Hay
Cj
Cj
X,
Hnh 3.29. Mc song song
3 t in.
c mc song song:
C,u = C, + C2 + ... + C=
i=l
V d; Mc song song 2 t Ci v C2, bit
Ci = lOOf^F (hnh 3.30) va:
Ctd = 430 |.iF hy tnh C2
U
JL
4 Cg=
, ..
C2--7
lOOpF
c l i - c . + c^hay C, = C a - C ,
C2 = 430 |i F - IOO1.1F = 330 |.iF
3.6. CUN DY
3.6.1. in cm
47
U q! in p cm ng
N: s" vng dy ca cun dy
A: S bin thin ca t thng
At: thi gian xy ra bin thin A()
n
Uo
a) th dng in v in p cm ng
trn cun dy khi ni mch dng in
b) th dng in v in p cm ng
trn cun dy khi ngt mch dng in
Hinh 3.32.
Du
trong h thc th hin in p cm ng c chiu ngc vi
tc ng l nguyn nhn sinh ra n (l bin thin dng din trong cun
dy) (hnh 3.32a v hnh 3.32b). Khi dng I tng th Uo ngc chiu I,
cn khi I gim th Uo cng chiu vi I. in p t cm c gi tr ph
thuc cu to ca cun dy (vt liu lm li, s vng, chiu di qun
dy) v ph Ihuc tc bin ihin ca dng in trn cun dy.
U l: in p t cm
AI: s bin thin ca dng in
At: thi gian bin thin ca dng in
L: in cm ca cun dy
Vs
n v in cm o bng Henry [L] =
=as =H
48
Cc n v nh hn ca H l;
ImH (milihenry) = 10 '^H; InH (nano Henry) = 10 ~H
1 |aH (microHenry) =
IpH (picoHenry) =
Cc n v ln hn l IkH (kiloHenry) =
t dng.
in cm ca cun dy xc nh bi;
L: in cm.
N: s" vng dy
-Iq: hng s" t trng
h s t thm.
A; thit din vng dy.
1,: di ng sc trung bnh
a : dn t .
in cm ca mt cun dy lun t l vi s vng dy bnh
phng (vic xc nh h s" t thm )LI,, thng kh khn vi cc vt
liu li st t v ch tnh gn ng, gi tr 1, thng phn b" khng
r rt tnh chnh xc c).
3.6.2. Cu to cun dy
3.6.2.1. Cun dy li khng kh
iOi cun d v li khng kh thng c dng
P
Hnh 3.34. Cun dy
dng ch nht.
4-LK IN
49
3,6,2,2, Cun dy li st
Li ch
LI ch M
Li ch E
Li ch I
Li trn
Li tr xoay
II
II
= (hnh 3.41) n
R
thi gian
5t
th
U l (5 x )
0 v I(5t) =
\\.
-------I--- V-
IK
'I
b) I,naK =
lOOV
^ ,
= ----- - = 2 A
50 Q
51
Gi tr in p t cm c th t ti
vi kV (y cng l nguyn l khi ng
mi cho ng c t ch dng bnh c
quy) khi ngun cp dng cho cun dy
(gi l cun mi) b ngng t ngt.
th hnh 3.43 th hin dng v
p trn cun dy khi c tc ng dy
xung vung gc vo mch. Tronf khi
dng I(t) ch thay di trong phn trn
trc 0 th U l thng xuyn b o cc
sau mi nhp ni (cc tnh dng) v
ngt (cc tnh m). th hnh 3.43
cng tun theo quy lut nh vi mt
xung t bin n trc y, ngha l
Hnh 3.43. Qu trnh ni v ngt
mch cun dy kh tc ng
sau: X = L/R in p U l gim 37% tr
1 xung in p dng ch nht.
L,X v I tng 63%
= U/R).
Sau x = 5I7R n ng lng trong cun dy c gii phng hon ton.
52
Khi t din p xoay chiu ln cun dy, dng xoay chiu chy
qua cun dy to nn qu trnh lin tc to v gii phng nng lng
t Irng (hnh 3.44). th hnh 3.45 m t qu trnh np v phng
nng ln cho cun dy trong mt chu k ca dng in hnh sin vi
4 nhp lir. vic khc nhau trong mi phn t chu k.
R I
II
Ui
53
Xl; Cm khng
f: Tn s"
X l = 2nfL = coL
L: in cm.
co: 2nf tn s gc.
cun dy c in cm L = 10 mH tn
sf=2MHz.
27ifL = 6,28.2.10"l/s.10.10-'Qs
Hnh 3.48. S ph thuc ca in
khng thun ca cun dy vo tn s.
125600 Q = 125,6kQ
3.8.4. H s tn hao v phm cht
u,
IX,
Q=
tg
X! cm khng ca cun dy
R: in tr tn hao ca cun dy
-X
a) Cun dy dng hnh tr
c) Li terit t m m
Hnh 3.50a, b, c.
y:
L; in cm (nH)
D: ng knh li (cm)
hay
N=
L(3D + 9 + 10W)
78 D-
L: chiu di li (cm)
W: b dy cun (cm)
N; a vng dy
Vi li hnh 3.50b
hay
N=
Ld
y:
L: in cm (nH)
D: ng knh ln (cm)
d: ng knh nh (cm)
N; s vng dy
7i D
Vi d:
78D-
L = N \-
100-
78(1,5)-
nH
3D + 9.L + 10W
31,5 + 9.2 + 10.0,4
= 66226nH = 66,226nH
Vi loi li st t ch yu l li Ferit c sn xut cng nghip
vi nhiu loi mu m hnh dng khc nhau. Tuy nhin vt liu lm
li ch yu l loi Ferit t mm c h s in cm Al xc nh.
Gi tr A _ca mt li cun dy l gi tr dn t ca li.
A l: h s in cm (nH)
L: in cm (nH)
A,
L
NV
N=
VAl
60(nH)
, V655
Li I Xli
u
I- xl
L3I Xl
56
Xud
x ,3
1 1
: =
oL,j
L|
x ,3
1
coLj
ha
Lj
(oL,
J_
Lt
L,
'II x^jr ii
1
C0L 3
"
m c so n g so n g
(/
LL
L,| 1
L, + L,
Hnh 3.53. Ni song song
2 cun y.
dy c in cm LIJ Lo v L3 tng ng l
Lj = SOOmH; L2 = lOmH; L3 = lOOmH.
Tnh din cm tng ng.
| L2 =
lllOmH
300
MI
lOOnH
Lu - Lj 2 + L3 = lOOmH + lOOMH = 2 0 0 mH
L3=100mH
Hnh 3.54. Mc hn hp
3 cun dy.
CU H N TP V BI TP
3.
4.
6.
7.
8.
9.
Cu to ca t MK?
5.
1 0 . T in ho c im c bit g? Cc in cc 1 , in cc
2 v lp
l g? ngha?
17. Mt t din c in dung c = 2200).iF c np bi din p mt
chiu 450V. Tnh nng lng np cho t.
18. T c c = 6800)J,F lm ngun in p cho in tr ti R = lOMQ.
Tnh thi gian phng in ca t (lc bt u phng t c
np y).
19. T c = 4 7 nF ti tn s f = 1 0 kHz c h s tn hao l 0 , 0 2 . Tnh
in tr tn hao ni tip vi c? Tnh phm cht Q ca t.
20. 3 t in c , = lOOnF; C2 = 22nF v C3 = 47nF c mc ni tip
nhau. Tnh Ctj.
21. Mt t c Ci = l|.iF c n tip vi t C2 to ra Cia = 359nF.
Tnh C2.
2 2 . Gii thch ngha in cm ca 1 cun dy? Khi no 1 cun dy
c gi tr in cm l 1 Henry.
23. Hng s thi gian ca cun dy trong mch in 1 chiu l g?
58
Ca^lOOnF
C 3 = 2 |.iF
C ,= 4 ^iF
C5=6mF.
2 pF
C3
2F'
100 nF
Ct
= jF
ci
6 pF
59
Chdng 4
ZP
Mch in c 2 u ni li vo v hai u
n li ra c nh ngha l 1 m ng 4 cc v
Li ra
Mng hai cc
60
Hnh 4.5. th vc t tr
khng ca mch ni tip RC.
hD
Uc 1 gc 90^(khnp tn hao
^ - Xc Vy z =
u
I
Z=y]V+X
Z = ^R'+x
_ ^1, _
tg(p =
trong mch.
61
Mng
hai cc
L||
II
Hnh 4.7. th vc t in p
v tr khng mch RL ni tip.
4.4. KHU RC
Chuyn mch n tip RC hai cc hnh 4.3 theo cch biu din ca
mt mch 4 cc hnh 4.8 vi U l in p l vo, 2 l in p l ra.
Hy xt tnh cht ca khu RC hnh 4.8 khi Ui l in p c dng hnh
sin v tn s" ca Ui thay i.
vng tn s" thp, t c c tr khng rt ln, khi 2 - Uj.
vDg tn s" cao, tr khng ca t c nh, khi Uo 0 .
Trn hnh 4.8 cho s ph thuc ca in p ra 2 vo tn s" li vo.
Tnh cht cho qua tn thp v nn tn s"cao gi l tnh lc tn thp.
Mch lc tn thp ch cho cc tn hiu vo c tn s thp i qua.
' '
2 Li ra
Li vo U]
i-
4 cc
U c = 22
hay^
= ^I
xy
R = Xe, t iu kin ny
R=
2n.c
U
hay
27tRC
2 tit
Tnh
c = lOOnF.
ca b lc th"p?
1
4.5. KHU CR
<>
LI vo u^
' <
>
-U c -^
4 cc
63
Hnh 4.12. th vc td ti tn s
gii hn ca mt CR.
c tnh ngha l
V2
tn m ct (tn s" gii han di fg) ca di tn cho qua.
Ti g
U| = Uo v do ;
(C=72.3nF)
R=2^kn
c
= 1kHz. Bit R = 2,2kQ hy chn
t c thch hp.
c = -------------------- ^
6 ,2 8 .2 ,2 (k Q ).1 0 -(H z )
- nF
6 ,2 8 .2 ,2
c = 72,3 nF.
4.6. KHU RL
U,
Kbi : 2 = U l = Ur hay Xl = R
Ta c 27tf,.L = R.
Hay
R
1
L
R
S-tKlnr
Hnh 4.16. th vc t
in p ti tn s gii hn
ca mt RL.
0
Uy
L 50mH .......... 0
-----
L^
JR
U2
100Q
wm
65
4.7. KHU LR
suy ra
R1
r
1
-I 1
c=
*
Hnh 4.20. Mch ni tip R, L, c.
66
Hinh 4.22. th in p ca
mch ni tip RLC mt
tn s xc dinh.
1
0)C
1
= 2nf
VEc
Ui
>c
R
Hl
Hnh 4.25. th tr
khng mch ni tip RLC
ti tn s cng hng.
c
Ur
Hnh 4.26. Tnh in
p trn mch RLC ni
tip ti cng hng.
Hnh 4.27. th
(t), Uc(t)
trn mch cng hng ni
tip (lc cng hng).
/ ^
,
Rf
Liv
1
R=1V
1
I*10V
c = C=10V
t
Hnh 4.28. Cc in p
phn b trn cc phn t
ca mch R, L v c ni tip.
68
<>
Khi gi cho in p vo u khng i,
quan st dng I trong mch khi thay i
tn s" ca u s nhn c c tnh cng
hng (hnh 4.29) ca mch cng hng
n tip. Hnh 4.30 th hin 3 ng c
tnh cng hng ng vi 3 gi tr d (hay R)
khc nhau.
Mch cng hng n
tip c bn cht l mt
mch chn lc tn s
(mch lc) tn s" v
ln cn hp xung
quanh f, Di tn s" b lc
cho qua (di tn lm vic)
c gi l rng bng
tn k hiu l b. Hnh
4.31 th hin cch xc
nh rng bng tn
nh xc nh 2 tn s"
bin fgi v fg2 sao cho:
I(f) = I ( y
R
=hng s
f c th bin iN-^
^I
c=|=
I max
b = fg2 - fgi = d .
rng bng tn cng ln khi d cng ln
69
1
cC
I
( \c
1
(27.10'' i ) ' . 20 . 10 " Ss
3 9 ,4 .1 0 " .2 0 .1 0\-12
1000
mH = l,27mH
39,4.20
4.8.3. Mch song song R, L, c
= Y
70
i Jc
u
II
= G : dn thun
X,
1
= Bl : dn cm khng
= Bp : dn dung khng
Xc
Khi B
th Y c gi tr nh nht Y = G.
Hnh 4.35. th vc t
dn n ca mt
mch RLC song song.
71
Tn s" ti
B l Bc
1
toL
2 _=
CO
1
LC
(2 0 ^
Hnh 4.38. th vc td cc
dng in khi cng hng.
<z>
khng i
f c th thay i
L||
r(
Bl
G
Bc
H s tn hao
Mch dao ng song song
c biu th tnh cht qua
ng cong cng hng cho
quan h in p u trn mch v
tn s f: U(f) hnh 4.40. Cc
dng ng cong cng hng vi
3 gi tr tn hao khc nhau c
cho trn hnh 4.41. Khi d cng
ln th ng cong cng rng ra.
rng bng tn b c xc
nh theo th hnh 4.42.
73
Hnh 4.41. c tnh cng hng song song vi cc mc tn hao d khc nhau.
vi u (f,0 = U ( U =
u .max
V
/, = 10 MHz
b =00 kHz
L^IOOpHl
= 100
0,01
R
Q=^
R = Q.X,=Q.co.L
R=
I
R,|
1JR,1
i
jRr2
IK
'
JRr
L
=c
- 1
!-
JR4kc
t).
Lc
75
t = t,, Ui = 0, t
Xcng
R
Uj
(a)
Hnh 4.46. Dng in khi c
phng in.
76
,
Ri
Vn chung
Hnh 4.50. T in ca mt CR
phng in t gi tr c np i 10V.
78
Xt qu trnh thc
hin php tnh vi phn l
vi hm Z(t) hnh 4.52. khi
dz
kt qu Z' =
c
Hnh 4.52.
th Z(t).
Hinh 4.53.
dz
Quan h Z' =
dt
t.
cng nh.
>' .........
<
100 n
Uy
10V
c
.7nF
u.
<
CU HI N TP
- BI TP
1.
2.
3.
4.
th
79
5.
6.
_
R
8fl
7.
Hy gii thch hin tng cng hng ca mch cng hng n tip.
8.
9.
J22n
M O pH
47 pF
Hnh 4.57 in p
vuri gc.
Chng 5
DIOT BN DN
5.1. VT LIU BN DN IN
i I
II
o
Hnh 5.2. Cu to tinh th Si
(trn mt mt phang).
i 1
i
II
II
:i:is ir :iz is
I
>11
:;:s
<I
1i
= -------------2 .1 0 -Q.cm
1
Gemani l X, = - _ _
40.Q.cm
dn in ring ca tinh th Si ch bng
5000
dn in ring
ca tinh th Ge.
5.4. CHT BN DN SILIC l o i N
83
Nu t vo phin Si-n mt in
p, cc in t t do chuyn ng v
pha cc dng ca ngun tc ng
to nn dng in nh trong vt dn
kim loi - y l qu trnh dn in
bng in t (hnh 5.6).
5.5. CHT BN DN SILIC LOI p
Pha tp cht loi Axeptor (loi
nhn in t) vo mng tinh th Si
(v d nhm hay cc nguyn t" nhm
3 bng Mendeleep vi 3 in t vnh
ngoi). Xut hin 3 lin kt ghp i
ho tr v 1 lin kt b khuyt (hay
l 1 l trng). Mi nguyn t tp
cht Axeptor d dng nhn in t
to thnh mt ion m tp cht
nhn v 1 l trng t do trong vng
ho tr (hnh .7). Cc nguyn t"
thng dng lm tp cht l Galium
(Ga) Indium (In), Nhm (Al).
Mt lin kt b
khuyt (l trng)
Tinh th Si-P
L trng
<rv
V o <f%
o l
<rv
<r%
u
Hnh 5.8. S dch chuyn ca l trng
(lin kt khuyt) trong mng tinh th.
84
Tinh th Si-p
...... 'r
o
4
0
--o
--o
-*-o --o -O
Dng l trng
Q = in tch
khng gian
I = khong cch ti
bin gii
85
I
I-
*Q6VVng p
trung ho
in trng
Vng n
trung ho
[
i i
i
1_ _
1
1
1
l
tn 1
4
p
::
u
1 :1
86
: -
*
li. *
_
-1
thiu s)
-Q Q
~o
in trng
dng
t ln vng p
87
-------------------------------------
v li trng hp k h n g c in p
ngoi, x u t h in v n g in tch khi
do qu trn h khuch t n cc h t dn
Dng
Dng
l trng
in t
c cc m t ti v n g n.
1
i ,
1 r i1
i
i
L- 1
ii /
______
.
/
Bin in p
khuch tn
n
/
K hiu quy c
Anot
Katot
Nu c phn c: thun
(t in p dng vo anot)
diot dn in vi dong ln,
u/
in p trn diot nh v
^
..
..
Ngun cp
B
in tr ca diot tkp. Cn
thay i c
in p
khi phn cc n g c 't m
Hnh 5.24. Mch in o c tuyn
vo anot) diot chn dcng in,
Von Ampe ca diot.
in p trn diot ln v
in tr cao. Hin tmg trn
gi l hiu ng van ca diot vi dng in xoay chiu. Dcng in
thun hng t anot ti katot. Quan h chnh xc gia u - I ;a diot
c th hin qua c tnh Von Ampe thu c qua mch o h.nh 5.24
vi kt qu thu c hnh 5.25. Cc kt lun v nhn x', t c
tuyn Von Ampe hnh 5.25 (ch ch xt vi diot loi silic).
A
88
<>
mA^
80
70
60
Ge-Diode
50
- S i Diode
40
Vng dn
in
30
20
10
50
li
20
Vng kho
(khng dn
in
ai 06 0.8
V
1,0
03
25
fjA
Hnh 5.26. Xc nh
in p ngng.
dn in (o cc in
p, cho cc m vo anot)
dng in qua diot c
chiu t K ti A v nh
(10A vi diot Silic v
10'^A vi diot Gemani).
Khi tng in p
ngc U k qu ln (vt
qua in p ngc cho
php ln nht) diot b
nh thng v nhit
hay c nh thng
89
v in theo hiu ng
Zener (hnh 5.27). Hin
tng nh thng v
nhit gy h hng cho
mA *
70
60
50
diot lm m t tn h ch t
van, h in tng nh
0
30
20
Din tch lp chn Imm
200
Si
10
CX2 OA O 0.8 1.0 12
10
Z-diot c tc dng n
20
nh in p 1 chiu.
30
h
lin tng nh
pA
thng v nhit xy ra
Hnh 5.28. c tuyn 1- u ca diot
khi nhit trn chuyn
ch to t cc loi vt liu khc nhau.
tip pn vt qu gi tr
cao nht cho php.
(Vi diot Silic l khong 180^c, vi diot Ge l khong 80^C)
Hnh 5.28 a ra
c tuyn Von Ampe
ca m t vi diot lm
t cc loi vt liu
khc nhau.
Trn c tuyn Von
Ampe, c th phn bit
in tr 1 chiu v in
tr xoay chiu (in tr
vi phn) ca diot,
Xt c tuyn hnh
0,1
0.2 , 0,3 2 0.4
0,5
0.6
p
5.29 i vi 1 diot
V
Gemani: Ti in p
Hnh 5.29. in tr thun mt chiu v in tr vi phn.
U c dng Ii qua diot.
in tr 1 chiu ca diot c dnh ngha (ti Pi)
R
u.
I,
Ti P.2 c
90
=^
AI,
AIp
>F
0,02V
0 ,0 0 2 A
->
AI,- = 2 m A .
lOQ
Sj
0.3V
0,7V
5 Q -^ 100Q
2Q -> 5 0 a
Rr
0 ,1 [.t0 ^ 10^0
ug,max
ti 200V
ti 3000V
Tmax
90c
200c
98%
99,5%
in p ngng
R
phng php bc bay trong chn khng sau gia cng nhiit to
dng tinh th cho Se. Tip tc to lp kadimi ~ km (Sn - Cd) :.)ha trn
hnh thnh cc katot. Lp chn hnh thnh gia Se v Sn - Cd. Diot
Sclen c kh nng chu qu dng trong thi gian ngn (ch xung) lt
hn loi diot Si ha}^ Ge. Chng c bit ph hp cho cc b nn in t
xoay chiu sang 1 chiu c cng sut ln, dng ln nhng p ra thp.
Trn hnh 5,33a: Diot oxyt ng c cu to gm 1 bng ng
lm cc anot, trn to lp Oxyt ng Cu^o, tip sau l 1 lp
graphit, sau to in cc th hai katot- Diot Cu - CU2O c in p
chu ng thp (6V) v in p m nh (0,2\0 vi c tnh Von Ampc
gn nh tuyn tnh (hnh 5.33b). Loi diot ny rt ph hp vi cc b
chnh lu cho in p ra nh.
K
Lp katot
Graphit
Seen - p
Lp niken
- -CU2O
Cu
lm anot
(ming p8)
Hnh 5.32.
Lp katot
cu to dot Selen.
Cc lm anot
bng ng
ng - Oxyt
0,6V
0,2V
Rp (in tr thun)
5Q -> 100Q
R r (in tr ngc)
0.1MQ - 1MQ
Ti 40V
Khong 6V
85c
90%
50c
75%
in p m
in p ngc
Nhit cho php
Hiu sut
Khi hot ng ch lt t trng thi in tr cao (khng dn ngt mch) sang trng thi in tr thp (dn ni mch) hoc n g c
li trong mt thi gian ngn, diot bn dn ch lm vic nh
mt kho in t.
tr n g th i in tr thp, v n g ch u y n tip pn b trn n gp cc
h t dn, khi ch u yn sa n g trng th i in tr cao, lp ch n tr v tr n g
th i ph n cc ngc c m rng v c np in tch.
92
R
Khi diol trn hnh 5.34 ngt mch (chuyn
mch s v tr bn phi),
hin dng .1^. Nu
Ri
chuyn mch lt sang v tr bn tri, dng Ip qua
V
R?
diot tng theo hnh 5.35, khong thi gian t|-, c
Ui
^2
nh ngha l thi gian ni mch. Khi chyn s v
li v tr bn phi, diot chuyn v trng thi ngt,
Hnh 5.34.
thi gian c nh ngha l thi gian ngt mch
(hnh 5.36). Cc gi tr t-,, v tj., ph thuc ln ca dng Ip, I vo in
p tc ng v vo cc in tr hn ch Ri R2Cc gi tr in hnh l:
= 0,5 ti Onis
2 n 200ms
xu
If
1
1
1
n
tfr
93
94
1
R =220a
Cs=100^F
R=220n
l =220V^
U-,
Cs=OOpF
CL=100fjF
(>-------------------------------
> ..
<\
=220V.
th in p v dng
in trong mch cho trn
hnh 5.45 th hin nguyn
l hot ng ca mch M2.
5.10.3. Mch
cu (B2 )
chnh
lu
Mch chnh lu cu
(hnh 5.46) dng 4 diot c
th nn trc tip t in
li 220V/50Hz ni khng
cn dng bin p nh
mch M2. Mch hnh 5.46
c nguyn l lm vic
ging nh mch M 2, y
trong mi na chu k ca
1 lun c 1 cp diot lm
vic v cho dng 1 chiu
qua
t i
R^:
khi
u ,> 0 .
Dj
v D 3 ng thi dn in,
Dy v D 4 b kho. Trn R|,
xut hin dng I, = I 3. Cn
khi
,< 0
dn
in, Dj v D3 kho; c
dng I 2 = I.| qua
(hnh
5.47). Hnh 5.48 a ra
mt mch chnh lu cu
c dng mch lc nng
cao cht lng in p 1
chiu trn ti.
7-LK IH
97
A o-
Bo-------
Kv hiu
0
0
Trng hp
1
Ao------- 2:1
-O
------oZ
K hiu
chun ho
8 -------
z
0
1
1
1
Hnh 5.51 ia ra mt cng logic x\ND dng cng ngh DTL vi bng
chn l m t hot ng ca rnch cho trn hnh 5.52. z in th thp
(Z = 0) khi c t nht 1 l vo in th thp (A, B = 0). Cn khi cc l
vo ng thi in th cao (A = B = 1) th z mc cao (Z = 1).
*sv
Ao-
44-
Qo-
----- o2
K hiu
&
------ oZ
K hlu
chun ho
Trng hp
2
3
0
0
1
0
1
0
1
0
0
0
1
Cc diot tip xc mt c
din tch chuyn tip pn ln
c ch to theo nhiu cng
ngh khc nhau, in hnh
l cng ngh khuch tn
nng chy hay cng ngh
khuch tn plana (hnh 5.53).
n
K
Dio tip mt
Diotplana
-'hngro
<
>
Vng p
Dng in thun qua diot Ip dng ln nht qua diot theo chiu
thun.
Cng sut cho php t a Piot
Nhit cho php ti a Tj
Nhm cc tham s" nh mc;
in p thun Up ( vi 1 dng thun xc nh)
Dng in ngc Ir (vi 1 iOn p ngc v nhit xc nh).
in dung ln chn c (vi mt in p ngc xc nh)
in tr nhit (gia
l D
n
10*
5
---- r*1---1
25
f *1 kHz
nA
IHTOO.inTT?
1*1I~n
rj=250C
f z
1.1
\ L_
s
? 10*
L
\
CtotlS
K)2
i 09
s
\
08
1.0
IHTOO
K)
5
N
0.7
/
L^=1SV
mA
mW
500
ITT 700
10
ii
!
-K
mox #2.7
'Ci
/
/,
\ B
25 c
PuA
^ K hiu
cc katot
K)
in700.ITT777
400
300
\
200c
KX)
200
V.
\
\
100
0 3
\
\
\
2V
100
200c
--ru
Hnh 5.59. Cc c tnh in hnh ca dot bn dn.
101
CU HI N TP - BI TP
1.
2.
Cu trc n tinh th l g?
3.
4.
5.
t.
7.
Lm th no to ra n tinh Si-n?
8.
9.
Ht dn thiu s l g?
Tip xc pn c phn cc thun bng cch no?
Hin tng xy ra khi tip xc pn phn cc thun.
Ti sao xut hin in dung vng in tch khng gian?
220 V
02
103
Chng 6
VV chung
b)
Hnh 6.1. c tuyn Von Ampe ca diot z v k hiu chun (a), k hiu thng dng (b).
104
h n g Z -d io t. M i z
d io t c 2
mox
Uz
Vng chn
Vng qu
c tuyn
zd t
105
*zmax
Uzo
5 (/7 k)
^2min
5
10
50
50
[mo
^Zma*
h
mA
(27)
b) Xc nh in tr vi phn
p trn c tuyn ca Z-diot
Hnh 6.5.
106
inA
ti im
= 0, IV
AU Z _ o ,iv
AL,
50mA
Hnh 6.7. S thay i c tnh ca z diot khi nhit tng t 25c n 125 c.
Khi
UzK > 6V
U zK < 6 V
I
T
UZK
T'
<0
107
T s
hay
h s nhit ca Uz
ATji
i 1c.
Vi d:
25c
m t d io t z
c U z = 30V . H
n h i t ca
d i o t l;
10 . m v ^ h . Tnh Uz ti Y'^c.
^UzK UzK.az.ATj
= 30V. 10-YC. 50c
= 1,5V
Vy ti 75C in p Z-diot l UzK + AUzk = 31,5V
Cng sut tn hao trn Z-diot xc nh bi;
p tot U z . I z
Izmax
Ptot
Tj
Ts
rz
Uz
az
Rthu
1____________ j '
'
1v=10V-*-j
Rv*ioon
-oib.-.
sBOmA
=18V
/L=50m A
RL=160n
1------------------- !L
Hnh 6.8. Mch n p n gin dng
z diot.
18V_gV
= Irv =
= lOOmA
lOOQ
U - ^
Iz.n ax = ( ^)
dng
I2 =
Khi s nl mch:
u = Uv + Uz
1 = 1. + 1.,
U -U -,
Rv Nu ti
cng ln, dng
cng ln v
nht cn chn hiu ng n p cn xy ra:
lOOmA
ngc
li. Gi tr ti nh
= 80Q
1=
u
Ry + R l
18V
= 120mA
100Q + 5 0 Q
6.1.8. B nhit
H s" nhit
* 0 l nhc im ca Z-diot, tuy nhin nu kt hp
c vi mt phn t nh diot Si thng thng c ao ngc du th nh
hng ca n h it c b tr ng k. Hoc n h trng hp hnh
6.9. N tip 2 diot c U jg- 8V v Uz4 = 4V, do h s nhit ca chng c
du khc nhau, h s" nhit chung ca mch n p mc 12V
(z= Uzs + Uz4 = 12V) c b n mt gi tr v cng b.
Hnh 6.10 s dng cch b gia cc phn t c h s nhit ngc
du nhau l Z-diot c ttz > 0 v diot Si thng thng c aj) <0.
Z--diot c az>0
Z-diot c az>0
^728'
Z2
Z-diot c a^<0
\7
diot bn dn
lm vic trong
ngc, lp kho
tch khng gian
III
c in tr rt cao tng ng
nh mt t in c in dung
c, gi tr in dung ph thuc
vo in p ngc t ln Idp
: : :
**
K hiu
110
&
-
c =
y
,.S ..A
am
e l hng s' in mi
8^; h s" in mi
A: din tch mt in cc phng
a,n: khong cch 2 mt in cc
C: in dung ca t.
Trong diot bin dung, ch xc nh c khong cch
l tr
trung bnh nu bit c phn b" in th v cng trng tc
ng. Theo cch tnh in dung trn, p dng cho hnh 6.14 vi 1 diot
phn cc ngc:
am
a l b dy lp chn ph thuc trc tip vo cng in p
ngc t ln lp chn. Trn hnh 6.15 khi t vo 2 mc Ui= 2V v
U 2= lOV ta nhn c 2 gi tr a,i v a,2- Do cc t v cng b (hnh
thnh gia 2 ion tri du) c coi l song song nhau nn c th tnh
t tng ng Cd bng tng cc t v cng b ny. Nh vy khi in
p phn cc tng ln, khong cch
rng ra v Cd gim i.
in p ngc cng ln, lp kho cng rng ra v khong cch
tng
ln lm gi tr Co gim.
111
t= 2V
2=10V
- - -
- - -
Vng p trung ho
m1
Om2
Vng n trung ho
100
80
IR b
60
0
Uc
20
20
18
16 14
12
10
>c"_
i
a) c tuyn
bin dung
c = f (U,) ca diot
v th v c t
Hnh 6.16.
ph
X,
112
tg
Q l h s phm cht
R in tr khi tinh th
c in dung lp chn
rtn s" ca tn hiu.
^7
Hnh 6.17. S ph thuc ca h s phm ch't Q v din tr ni tip ca khi tinh th
Rg vo nhit : Q(Tj) v vo in p kho Rb(U r).
/-
7-
/-
/-
21
Hnh 6,18. Mch chn knh u vo trong my thu hnh dng diot bin dung.
113
8-LK OINT
Vng n
Vng p
K hiu
Rm
Mt s gi tr in hnh ca cc tham s:
u 65mV n llOmV
Rn
Ip = 0,9mA n 22mA
120Q n lOQ
Rs 4Q n 1,52
6.3.3. ng dng ca diot Tunen
117
L trng
' in t
/(n)
IM
P-.
4-
oooooo
OQOCtOO
^OOOO
OCiODO
BOOOOO
^*(r7
oo gn oo
K hiu
Khi phn cc ngc diot khng dn dng v diot PIN hot dng
nh mt diot thng thng (vi tip xc pn) khi tn s lm vic di
10'Hz (10MHz).
tn s" cao hn 10MHz diot PIN dn dng xoay chiu. ln
dng in xoay chiu ph thuc vo in tr lp I v do in tr vng I
rt Lhp v khi hot ng cc ht dndcphun lin tc vo vng .
Mun vy cn phn cc mt chiu chodiotbng cch t mt in p
mt chiu kt hp vi tn hiu tn s cao hn 10MHz ny.
in tr vng I ca diot PIN c th iu khin c nh in p mt
chiu phn cc thun cho diot.
in tr ca diot PIN ch
yu do in tr vng I quyt
nh, ioi ra cn b sung cc
gi tr nh in tr vng p v n
(pha tp mnh) v in tr tip
xc ly ra cc cc anot v katot
cng nh in tr dy dn cc
ra. th hnh 6.31 cho xc nh
quan h in tr cao tn R||ir ca
diot PIN cao tn ph thuc vo
dng in p hn cc th u n Ip.
R 30V n 150V
Ip 20mA n lOOmA
1W n 6W
T , 125c
Ts -55c n +125c
|( * 200nA
~ i
T ~ 6k2
6.5.3. ng dng
119
s c thi gian
chuyn trng
tr rt nh.
Kim loi
...
in trng
---------------------------------------------
K hiu
Hnh 6.32. Cu to v
k hiu ca dot Shotky
(diot S).
Ur t 5V n 20 V
Dng in thun
Ip lOmA n lOOmA
Ptt lOOmW n 2 0 0 mW
Tham s nh mc:
Thi gian ni mch
ttr 50ps
ts lOOps
in dung ca diot
Cj 0 ,2 pF
Dng in ngc
Ir 25nA
6.6.3. ng dng
120
CU HI N TP - BI TP
1.
2.
3.
4.
5.
6.
7.
8.
T i sa o tr o n g v n g n h th n g d io t z
i h i m t g i i h n
dng
in xc nh?
9.
$Z8
R,
17. H s" tn hao v phm cht ca diot varicap (diot bi"n dung)
l g?
18. Diot bin dung c dng lm g?
19. Hy m t hiu ng Tunen.
2 0 . Hy v c tuyn I - u in hnh ca diot Tunen.
2 1 . Diot Tunen lm vic trng thi kho nh th no?
122
Chng 7
Cu kin in t c 3 lp bn dn n tinh
th dng npn hay pnp ghp xcn k nhau to
Lhnh 2 tip xc pn r t gn nhau c gi l
transito lng cc (BJT) phn bit vi mt
lo transito ch c mt tip xc pn gi l. nhm
transito n cc hay transito hiu ng trng
(FET) s c xt ti chng 8 . Loi BJT lm
t n tinh th Gemani c nhiu nhc im nn
<
i
Hnh 7.1. cu to
c bn ca transito.
n gy n ay ch cn d n g nh ng trng hp c
<
p
n
o-
p
<>
ca transito pnp.
Colect
\ Qc
\
Baz
E
|E
K hiu quy c
/ E
Emitt
123
r0.7V
fcE*-7V
8 e -0 ,7 V
ov
p
7V
Nh vy Diot baz-emit dn
in thun (m) cn diot bazcolect kho.
n*
L
trng
th
in th
tng cng
in
colecto 99%
IDng in
baz 1% B
'Dng
V 1mA
^gin
Ube
emit
I 99%
Vi d 100nr\A
B=
V d 99mA
1%
=99
<'
<
n
o p
n
(
K hiu quy c
B
0.7V
ovi
-- -
. . .
7V ^BE*^0.7V
-- - . . .
= 999
Ib
1%
126
UcE - Upu
CB + u
Ube
jL
Hnh 7.10. Cc dng in v
in p trn transito pnp.
lOrnA?
J.OV
*7V
Jq
U b6 = - 0 .7 V
/ e
J-ov
Li ra
Li vo
Li ra
Li vo
Mch nguyn i EC
Mch nguyn l BC
127
7.5.1. H c tuyn vo
--(7 )
C )
4 = hng s
_ i
Hinh 7.14. Mch mc
colectd chung.
I f - UfjE, p h p o n y c l y t r o n g i u
in tr vo vi phn BS l dc ng c tuyn vo xc nh ti im
(A) ang x t- im A gi l im lm vic tnh ca iransito.
128
9-LKIN T
129
^CE
A U ,,
AIc
Do thc t ng le In c hi
cong (hnh 7.20) nu nh ngha
dc vi phn ca ng c
tuyn gi l h s" khuch i
dng xoay chiu.
thin
tng ng ca dng in ra v
dng in vo (khi UcE = hng)
130
Vic tng UcE s lm tng UcB v U|JE (do U c E = UcB + Ube hnh
7.21). Vic nng cao in p UcE cng lm gim nh hng ca n ti UbeNhn chung vic lin h (ghp) ngc gia u ra
vi u vo l iu khng mong mun (khi ch
UCQ
xt nng transito) nn nh sn xut tm mi
JL^
UcE
cch hn ch nh hng ca UcE ti UuE- ng
UaE
biu din quan h Ure - UcE c gi l c
tuyn ghp (c tuyn hi tip) c cho trn
JL.
hnh 7.22.
Hnh 7.21.
vi cc transito c cht
lng tt, c tu y n ghp ngc
tng i b ng phng, nglia l
nh hng ca UpE ti R; rt
hn ch. Mc nh hng
1.2
,/B=120pA
^OOi
^eoi
1.0
as
ae
ngc vi phn D.
0.4
^ 20pA
/ b 0
a2
10
20
/ c e /
Vi h tham s" hj th
D = hI2c
7.5.5. Bn nhm c tuyn ca transito
131
uv
Rt=2kn
0.72V
6V
-LOV
132
Chn in tr ti colect Rl
(v
d R]^= 2 kf)
R,
2kQ
= 6 mA
Chn
'4^
m
A
02
V
R(.
n,28V
C)
0.72V
- ------
1 2 V -0 ,7 2 V _11,28V
Rv = -----------------= - - = 376kQ
30|^A
30iA
-L
ov
Hnh 7.26.
Mun c c gi tr Ry ng nh tnh
ton, cn chn Rv gm 1 phn c nh v
1 phn tha} i: Rv = 330k2 + 6 8 kQ, trong
in tr 6 8 kf l bin tr.
Cch khc nhn c U e = 0,72V l
dng b chia p gm 2 in tr Rj v R2 Ohnh
7.27). cch ny cn chn dng Iq qua b
chia khong 2 n 3 ln Iij. Nu chn Iq ln
th Ri R.2 phi nh v lm gim in tr vo
ca mch, cn nu chn Iq < I|3 th in p Ube
khng n nh. Chn !(, 2 Ijj, t ;
Hnh 7.27. t in p cc B
nh b chia p R 1 R2 .
R. =
R22 =
^ BE
I/hI
----- ^
^pA I70I 60I 50ioI30^20
10
,
------'-------1------ 1-------i----Itfccl
8 10
/b=m
gp
40m
M
60 pA
-3mA
0,72V
Ib = 30A
' n E =
I'c +
s thay i trong phm vi 2 0 )aA n 40|0,A (th hin trn
hnh 7.28) dn n s thay i dng coect I'c + ic t 2 mA n 4mA.
Dng colect gm 2 phn hp thnh: thnh phn 1 chiu (l'c = 3mA) v
thnh phn xoay chiu C (c bin 1 mA).
U'cE=
6V
in p baz gm hai phn: 1 chiu U'be~ 0,72V v phn xoay chiu i7g
(c bin gn ng bng 0,05V).
H s khuch i in p
( y p|j,pp v L , l cc tr bin tng ng)
H s khuch i dng in
7 2 n/2
u BE.,
Vi mch v d tnh c:
A
2V
3,
0,05V
40
ImA
yi= T =
b lO^A
= 100
Vp = Vu.V = 4 0 . 1 0 0 = 4 0 0 0
136
IIbI
/
. y
A,
__u
1 /be/
VUbeI
Hnh 7.29. iu khin kiu dng in
(bng dng in).
Rz
137
138
IcEo (h n h 7.32)
IcEs (h n h 7.33)
D n g d em it -b a z khi h m ch colect:
I ebo (h n h 7.34)
Ic E v
(hnh 7.35)
I ces
feo
H baz
H
colect
Uc0
UCES
Hnh 7.32. Xc nh
dng dlcEo-
Hnh 7.33. Xc nh
dng d Ices-
Hnh 7.34. Xc nh
dng d Iebo-
^CBO
-CEV
rS-
CEV
cBo
Rb
H emit
Hlnh 7.35. Xc nh
dng d IcEv
Hnh 7.36. Xc nh
dng dicER.
Hnh 7.37. Xc nh
dng d IcBo-
7.8.2. Cc in p ngc
z. B. /cE0 2rnA
H mch
baz
U[BR)CEo(m
UcB~ 0
c e
= 0 ,8 V
be=0.8V
140
iB boho-
v
n
oy
0V
n
o
7V
^a2v
I,Cngin mch
Bbo lio
R, .B
10
20
30
40
PcK= UcE.Ic
P i!k U uk . Iij
Cng sut tn hao chung:
lot
U ce(V)
Icmax(rnA)
'.ot
10
500
Ptot (W)
5
C B
20
250
30
167
40
125
^CE* ^Cmax
200
100
10
20
30
(0
50 IUceI
V
Nghch o ca h sdn nhit c nh ngha l in tr nhit RthGia s nhit gia lp chn v mi trng lm mt
R. =
142
(n v o ca in tr nhit C/W)
Tj: nhit cao nh't cho php ca lp kho
T^: nhit ca mi trng lm mt
Mi trng lm mt c th l v ca transito, khng kh bao quanh
transito hay cc phin lm mt gn cng v transito. T c cc loi
in tr nhit khc nhau:
in tr nhit gia lp kho v v transito
RthGK^ in tr nhit gia v transito v cc phin lm mt.
Rihk: in tr nhit gia phin lm mt v khng kh bao quanh.
Trong iu kin c h thng to nhit y th in tr nhit
tng cng;
r^thg I^thG
R th G K + f ^ th K
RlhK RthGK
1 4 c/w
143
p _
lol
R.
175"
c - 3 5 "c
14'C /W
140
14
P,,= 10 W
Nu transito khng c lm mt nh lp cc phin to nhit, tc
l v transito tip xc trc tip vi khng kh, s dng in tr nhit
Rthu s tnh c Ptot c gi tr thp hn:
Rthu = in tr nhit p kho v mi trng khng kh
Vi BD107 c R,h = 40c/w
T .-T
_ _ J____1!
175"
toi
c - 3 5 'c
4 0 " c /w
R.^thu
Ptot=3,5W
140
40
U be
U ,= U, + U e
U,5K= 2 - Uk = 1,7V - IV = 0,7V
Do b nng Ie tng ti 10,5mA. Khi Ure = 1,05V
U r , ; = I k . R,.; = 10,5mA.100Q = 1,050V
144
Ri
Ri
C)
)
5
Re 4 = C e
R2
,/b
7.12. TP M CA TRANSITO
7.12.1. Nguyn nhn pht sinh tp m
145
10'LKINT
p, = u, .1,
p^; cng sut tp m.
Uri in p tp m hiu dng.
1^: dng in tp m hiu dng.
7.12.2. in tr tp m
T;
b:
_Ws_ Ws
Kelvin K
4kT=l,6.10 -2 0
^ RT2 _
R2
146
Vp ^-l-P
^ RT
F= 1+
p
^ RT2
V.|)
_ p
pR2
'
v
[>
147
V d: Vi transito BSY 52 c mc tp m 6 dB v h s tp m F = 4 in
= 32.10-"W = 320.10"'w
U..K = VP,r .R; - -J320.10-'*.
U ,R
(Ri=
rtiE
u .rR
0,8445|aV
RI
Pr, = [ ^ J
K ^ J
1
1 _ 1,789.10'M
=
--^ w
7.13. CC THNG
CA TRANSITO
7.13.1. Cc tham s nh mc
in tr vo vi phn
1
in tr ra vi phn
^CE
22c
Cebo~ 25pF
7.13.1.5. Cc tn s'gii hn
Cc in dung lp kho nh hng ti gii hn tn s cao. Khi
transito lm vic, tn s tn hiu vo tng lm cc h s (3 v a gim
AI,
)
AIp
'
Alg
Tn s khuch i n v l
t n
s" ti p = 1
f(p - 1)
149
ti
Khi
150
P be (gia baz-emit)
P tot
p C E +
b e
pC F ,-
* 2 0 0 c.
D i n h i t b o q u n - 6 0 c - 2 0 0 c v i t r a n s i t o S i v - 3 0 c n
12V
RL=2A0n
/* 0 .
/c *5 0 mA
R,
serOV
CE =
8E s 0.9 V
151
R Lmin
< LLmax m
Rt47kn
Rp
R2=4.7l<n
Hnh 7.50. Tng kho transito
iu khin nh nh sng.
12V
Rl
R|
u ra U2
u vo)(J^
.ov
Hnh 7.51. Tng khuch i dng translto (mt EC).
y |V |l bin in p v
dng in ti li vo. 2 v ijl bin
in p v dng in xoay chiu ti li ra.
in tr ra vi phn ca mch
khuch i:
153
H s khuch i dng in Vj
H s" khuch i in p Vu
in tr vo xoay chiu
in tr ra xoay chiu r,,
100 hV
iJjV
lOmV
IV
Tng 1
Tng 2
Tng 3
Cc tng khuch i
c g h p vi n h a u q u a t
Rl
R i
Ci
II1
1
r^
i
^
) r2
i
c,
il
u ra
Re C3
^0
u ra
u vo
C2
u vo
(Y
C
iiii
Ic.
^2
u vo
^2
u ra
o
UvAo -
I..a = I c
u ,.
U be
H UcE
^ra
Uvo -
eb
u.. ^ CB
CU HI N TP - BI TP
1 . V cu to transito pnp. Nu tn cc cc v vng bn dn tng ng.
4.
5.
6.
7.
8.
^ s 12V
|R
Jik n
R,
]R i
1^2
i C
11
'lO P
0
7 hF
JR
IR e
Ce
j2 2 0 n H
^70F
156
J rj
J
Re
Ca
transito npn.
23. Hy v 3 mch mc transito c bn v nu tn cc dng in v
in p li vo, li ra ca mi mch.
24. Mch hnh 7.62 l kiu mc g ca transito?
Rc
R = rC j
157
Chng 8
TRANSITO N
cc
Hnh 8.1. Cu to ca
JFET knh n.
--------------D >
1
n
P]
y
i
s -------------- ov
Hnh 8.2. Phn b in
p trn knh n dc theo
hng t D ti s.
Gia vng tinh th loi n v hai pha loi p hnh thnh hai lp kho.
158
Chiu in trng
ni b ca lp kho
<^0V
Hnh 8.5. Phn b (kch thc)
knh ph thuc lp chn.
159
Tip tc cho in th cc G m, n mt
gi tr no , hai min lp chn gp nhau
(hnh 8.7), thit din knh lc ny bng 0.
Dng in khng cn trn knh (Id = 0 ).
Transito b kho.
K hiu v tn cc in cc ca JFET
cho trn hnh 8 .8 . y cc ca (G) cc
iu khin tng ng vi cc baz (B) ca
BJT. Nh vy iu kin lm vic thng
thng ca JFETn l U|5S> 0 v Ugs ^ 0 cn
9 0 : Drain
02V
U dg
Q
s
G=Gate
o
-GS
OV'
ov
S = S ource
-12V-|--------------------------G -------
-do
.2 V - ----------
os
Uos
ov>
Hnh 8.10. Cu to, k hiu ca JFETp
(knh p).
160
Lov
H c tuyn ra In-U|xs
(hnh 8.12) c ly trong iu
kin gi U(;s cc gi tr khc
m i
10 /
0,
nhau (QS
0) khi U qs
t n g
U os
khng
p
----- ---------------------- Q
12
M=OV
,
2r
^
3V
/w
" 1
K)
t^OS(P)
20 |
Id
U ds
ca JFETn.
lm
Hnh 8.13. Cu to
ca JFET knh n.
D * U p s
11-LK IN T
161
(gi
U ds
= hng s)
AU gs
= 1 (V) th
A lo
s bng S(mA).
(khi cho
U gs
= hng s)
Cch xc nh
c cho trn hinh 8.17; gi tr thng gp
rps ~ 80kQ n khong 2 0 0 kQ.
Hinh 8.16. Xc nh dc vi
phn ca c tuyn truyn t.
Hnh 8.17. Xc nh in
tr ra vi phn ca FET.
^Dmax
tot
0
/g
Uos
G S --2 V
= 8 V
Ptt = 200mW
Tj =
8.1.3. ng dng
u im c bit ca JFET l c in tr vo ln nn vic iu khin hu
nh khng lm tn hao cng sut ca tin hiu ti li vo.
y s l h dn ( dc) ca JFET xt ti A
163
(Vi I |3 I|50
U o s (P )
ta C s = s.
;So =
U g s (p )
a u GS
21 DO
^GS(P)
So l h dn ca JFET tnh ti im
U gs
=0
-2 V )
in tr vo ca mch;
Te l in tr vi phn li vo mch.
Tqs in tr vi phn ll vo ca JFET.
Rq in tr cc Gate.
in tr ra vi phn:
Hinh 8.20. Gii thch qu trnh khuch di trn cc dc tuyn ca transito JFET.
164
V u -S .
R , . r , DS
mA
lO k Q .lO O k Q
~ v
lO k Q + lO O k Q
= 72,7
8.2.1.1. Vn Chung
Phn tch cc ca transito l 1 tinh
Lh dn in v d loi p (cho MOS knh
dn in bng in t). Trn to hai
vng dn in tt loi n c ph trn b
mt hai vng ny mt lp in mi mng
SO2 c hai ca s lm 2 in cc ra l cc
mng (cc D) v cc ngun (S). Trn b mt
lp SiO.) gia hai ca s ph mt lp
nhm to in cc th 3 l cc ca (cc G)
nh th hin trn hnh 8 .2 2 .
Nu t mt in p dng vo gia 2
cc m n g v n gu n Up.s tra n sito khng dn
Cu dn in loi n
Hnh 8.23. S xut hin knh
dn loi n.
165
U q s-
Nu khi ch to to sn 1 cu (knh)
dn loi n (hay p) n trc thng t cc s
sang cc D - s nhn dc transito trng
loi MOS knh c trc. Transito t dn
in trc khi c in p cc ca tc ng loi Depeletion - type (hnh 8.24).
DMOSFET c th c in p Ucs
dng hoc m iu khin. Nu l knh
n khi U g s > 0 DMOS ch giu dng
l tng, khi Ues < p DMOS ch
ngho dng lo gim (ch ngho
thng dng hn).
0
SO2
r T
4-
/ -------------
cu n'j
ov
?s
2V 10V
?D
0Vi
O-
9V
S46V
=*2V
2V
lav
Hnh 8.27. Ch nu tr ca
c tuyn thay i theo U d s -
ov
-3V -Ipy
96
?D
Knh p
167
Ugs
vi U qs - hng s.
y ta ch quan tm ti cc
h c tuyn loi MOS knh n,
vi loi knh p cn i cc tnh
ngun cp (i chiu trc to ).
Uos*6V
U qs
Uos- 5V
20
V
Hnh 8.34. c tuyn ra v c tuyn truyn t ca EMOS^.
in tr ra vi phn DS l dc ca ng
Ca MOS.
AU DS
DS
AI D
- Us xt im lm vic
(U d s
= hng s).
Gi tr thng gp ca s5-^^^n
V
Ugs
Q = c .u
10 "As
c ~ 2 .1 0 '''F
= 500V
in p np trn t ln nh thng lp
in mi SiO, v ph hu transito. trnh hiu
ng ny, cc li vo ca MOS ngay sau khi sn
x u t cc cc c n n gn m ch vi n h au cho an
169
* 35V
+ 10 V
* 50mA
** lOmW
1 0 C
gi tr in hnh Icss
xc nh).
I(ofO lO p A n 5 0 0 p A T ,= 2 5 c ( h a y T, = 1 2 5 C ).
in tr R ds(h) lc ni m ch v Rosofo
V d:
n g t m ch.
200Q (o khi GS = 0; DS = 0; Tj = 2 5 c vi D M O S n)
~ Uj)s Id
Khi
Tj; nhit ti a cho php ti knh dn.
T; nhit mi trng.
Ptt: cng sut tn hao ln nht cho php,
nhit T bt k, cng sut tn hao c xc nh l Pv
tot
8.2.5. ng dng
M,3ch EC
Mch
sc
M;ch BC
Mch GC
cc
Mch DC
Mach
171
= 0 , 5 V, in p v dng cc mng
bin thin tng ng
*18V
Li vo
v p.
Sik
^mA
30
mA^
30
25
25
20
20
15
10
10
15
18 20
in tr vo vi p h n tn h t i ln cn im lm vic A:
r. =
Ri
17V
Rg
IV
b=18V
L vo
173
in tr ra ca mch DC kh nh.
V d: mt b khuch i dng
DMOS knh n mc DC (hnh 8.43) co
ti R] = Ik. ti im lm vic
MOSFET c s = 8 mA/V Rg = 4,7MQ
v rcs = 5.10^Q.
-o18V
........ ............o
jR,=80Mn
o^. _JL
^1 _ ,1
o -
VJ:7
jRG=^.7Mn
[jRL=1kn
Hy tnh in tr T;, v r ca
mch cho.
-oOV
1+ 8
mA
IkQ
V
5.10'^Q.4.7.10*^Q
5.10"Q + 4,7.10"Q
= 42,3MQ
1
IkQ.
kf +
174
1 V
IV
8 mA
1,125
= 9.47MQ
s 0
c HAI cc CA
DMOSn
D M O S.
EM O S n
EM OSp
dn gi tr ca
t ov n vi V s nhn c c tuyn Ie dng hnh 8.50 ca UJT. C th gii thch c tuyn nh sau;
E 13 1
K 13 ]
u ,B.B,
Uq =
c
>02
e ------;
r r ^
\
\
-----\ -----
y
|Q
i p
3V
K hiu
ov
lOV
82
^82 B I----
E<?
t
Rbi
Rb2
Nu r| = 0,3;
t |U [52 b i
0,7V
176
e t
U b2bi
khc nhau.
CU HI N TP V BI TP
1.
2.
3.
12-LK IN T
4.
5.
6.
U [)s
ca JFETi?
12V
h
Ikl
---.
J l^ _
'lOnF
^ .......
---------- 0
22nF
J
i Rg
li i
U2
-2V
9.
Rr
1 ^ 0'
II
1
Rg
178
-0
o-
t
^Q
Hnh 8.54. Mch t dao ng to xung tam gic Ue v xung hm m Q dng UJT.
179
Chng 9
CC t16CH VI IN T (IC)
9.1. KHI NIM CHUNG
Trn 1 phin bn dn
n tinh th c ng knh
c lOcm c kh nng cy
c 10^ n 6.10 cc nhm
transito sau khi chia nh
phin bn dn thnh tng
modun (chip) ring l. Tuy
nhin chi ph lao ng v do
gi thnh cho vic hon
Hnh 9.1. B khuch ai tng th'p 3 tng
thin rt cao. Thc hin ch
dng transito.
Lo tt c cc linh kin
transito, diot, in tr ng
lot theo mt quy trnh cng ngh xc nh c chun ho, ng
thi thc hin ngay cc lin kt gia cc linh kin ny to ra mt hay
nhiu mch in c chc nng x l gia cng tn hiu v c ng gi
trong 1 v duy nht s mang li ngha kinh t k thut to ln, c bit
l gi thnh h v tin cy cao. Mt mch in c ch to nh vy
c gi l mt mch vi in t (Integrated C ircuit: IC). Hnh 9.1 v 9.2
ch ra mt IC n gin gm 1 b khuch i tn thp c 3 tng khuch
i vi l vo gia 2 chn 1-4, li ra 3-4 v cp ngun 2-4; IC xt
c k hiu nh hnh 9.3.
<?2
o3
lo-
180
Ph SiO,
Lp Epitaxi
n
p
-------- V--------
Mt lp bn dn oi p c khuch
tn qua ca s (hnh 9.5) sau lp S 1O2
c k h p k n (hnh 9.6). Vic lo ca s
tip theo (hnh 9.7) to ra cc vng
"bn o" dn in loi n, cc bn o ny
cch ly nhau nh mt tip xc p-n.
________ /Sia
Hnh 9.5.
Cc bn o dn in loi n
p
Hnh 9.6. Sau khi khuch tn
vng p ph lp SiOj ng li.
11tllllItltlH
J n \
'M' l
p
n
p
Lv n g emit
Vng baz
Vng colect
Hnh 9.11, o
tinh th cho diot.
s G D
s G D
________________
!_____________________
__________ ^__________
r'* V
p
ph sn xut.
BNG SAU CHO s LIU LN DIN TCH CC LINH KIN
CH im CH TRN CHP
Linh kin
Transito BJT
0,01mm^
Transito MOS
0,002mm^
in tr 100Q
0,015mm^
in trd 10kQ
0,2mm^
u
1
13
12
II
10
183
K thut lai gm hai cng ngh c bn: cng ngh mng mng v
cng ngh lp.
Hnh 9.20.
9.3. VI IN T S V VI IN T TNG T
9.3.1. C s
cng ngh MOS. Cng ngh MOS cho php tp trung linh kin mc
cao. Cc chip c ch to n gin hn, cn khong 40 cng on
ch to so vi 140 cng on khi dng cng ngh lng cc.
IC MOS c in tr cao do n ch cn mt cng sut hot ng
c 10% so vi IC lng cc cng chc nng.
IC lng cc cho ra cng sut ln, in tr vo v in tr ra nh
v c kh nng lm vic tn s cao hn so vi IC MOS.
C th chia IC s" trong cng ngh n khi theo m hnh sau:
9.4. MC TCH HP V MT NG GI
Im m , cng n gh
187
188
u vo p
Hnh 9.25. th
theo t.
(9>180)
189
u = V (Up - U h)
PN
UpN = U p - U n l in p vi sai
V l h s" khuch i ca OPV
Ua l in p ti l ra
Nu chn
Un = 0
Khi chn
Up = 0
Di tn s lm vic ' = 0
= oc
in p tp m l v cng b u^pm = 0
9.6.4. OPV thc t
So
vi tham s l tng, OPV thc c cc gi tr cng gn vi l
tng th c cht lng cng cao v ch to cng cng phu kh khn v
do gi thnh cng cao.
Mt s cc tham s" ca IC OPV thc t in hnh (thuc nhm
cht lng cao).
H s" khuch i V = 10
Re = IkQ ti lO'^M
R = lOQ
Van. = 0.2
G = 5.10'
UtpAn, 3 |lV
. H s" V c c nh vit
R2
191
hay
- U
Ro
- U
R.
v =
Ro
u,
u..
T - ^ = ^
R2
R.
192
u,,
hay v = - u.
R,
'
R,
CU HI N TP - BI TP
1.
2.
Loi
3.
4.
5.
6.
7.
8.
9.
13-LKIN T
no?
OPV cho tn
193
Chng10
THYRISTOR
10.1. DIOT 4 LP (THYRISTOR DOT)
10.1.1. Cu to v hot ng
A-
?A
-D ,
Di
-D
Om
Dii
p
Di
p
Dni ^^
n
^AK
Dii
0 |I I
^AK
Hnh 10.2. Cu to m
phng ca diot 4 lp.
5?
5 J^ I^y ^3
dot 4 lp.
<I>
'Vng dn
Rv
Vng qu
u (u
52
/< 7 3 = "
Vng chn ngc
Uak
Uh
Vng chn thun
?A
p
n
p
<
n
<K
1 im lm vic xc nh
196
Uu 0,8V
Is ~ 125|iA
Ig 15|.iA
2Q
0,2)aS
5|aS
LotU m ax*
10.1.3.
1 5 0 m A
I j'M
S5 1 0 A
P*150mW
T,,=.+65C
T, = - 40c
u,,
60V
ng dng
Cu to v hot ng
p v n xen k lin
4 lp vi hai trng
thi in tr thp.
chuyn mch. Khi
thi kia cn c tn
197
0
o-
n
K
Hnh 10.11. Cu to ca
SCR iu khin p
(thyristo iu khin katot).
?A
K hiu chung
loi sc R iu
khin katot
oi SCR iu
khin anot
Chn ni cc ca
K
"a thyristo"
Chn nl ant
198
A<?
p
Oi
o-
D||
-AK
Di
n
G
o-
0|I
Dui
Ont
Ki
Hnh 10.15. Phn cc
ngc cho SCR.
Khi Uak < 0 D, v Dji b kho Djj tuy dn nhng tnh hnh chung
SCR b kho to ra vng chn ngc vi in tr cao c MD cho n
khi U
ak
v t q u m t g i tr n g n g ( i n p n g c t a c h o p h p )
S C R b n h th n g v n h i t v b p h hng.
K hi
> 0 b a n u D i v D jj d n i n n h n g b n g n b i D jj k h o ,
S C R v n g c h n th u n vi tr n g th i i n tr cao (v i M ) d n g i n
tr th p . L u tro n g su t q u tr n h
ny
lu n
g i ch o
in p cc iu khin Uc; = 0.
in
p ngng lt o (in p mi
U kq) l gi tr in p ti S C R lt t
trng thi in tr cao sang trng thi in tr thp theo hng thun
trong iu kin gi Uq = 0.
.. Vnq dn
Vng qu
.... ... y
H
4_L
-2500 -2000 -1500 -1000 -600
uvo Uak
U
ca SCR.
_/J ^
mA
H------1---- -trrt=dt
50-
25
-I
I
>500 1000 1500 2000 2500
Hnh 10.17a. S ph thuc nhit ti
vng chn ngc.
iK
Hnh 10.18. M hinh tng ng SCR nh 2 transito npn v pnp u xen nhau.
200
Ho ^
V
2500
2000
1500 *
1000
500
1
1
1
1
1
1
I
1
0 1
Hnh lO.lSb ch ra di iu
khin chc chn (vng m)
tng ng vi di nhit lm Dng mi
vic gi thit t 20c n 130c. cc ca
Vic mi SCR s chc chn khi
gi tr dng Iq v in p UcK Dng in
cng ln. T th hnh lO.lSb khng mi
c
vng I l vng khng mi dc,
in p cc ca in p cc ca
V
vng II l vng mi c th c,
khng m c chc chn nh
vng III l vng mi chc chn
nht mi c
lt trng thi cho SCR. Tc l
Hnh 10.18b. Di iu khin ca c tuyn vo
xung mi
tng ng vi bin
Vng I khng mi c
Vng il c th mi
dng Ig phi nm trong vng
Vng III chc chn mi
III mi chc chn lt c SCR.
Khi trng thi in tr thp, mt lng rt ln ht dn trn ngp
SCR, cc G lc ny mt tc tc dng iu khin. Tc l khng th dng
xung iu khin a SCR t trng thi in tr thp v li trng
201
dng
c
chn
(thi
1000
500
GK
1
A
100 I
10
t
0.1
0,1
7
500
100 ^
Um
202
tni; thi gian ni mch (ts5 = tgd + tgr) dng qua SCR tng t tr
0 n tr nh I(.
Hnh 10.21.
203
t h h n h 1 0 . 2 1 a c h r a q u a n h c n g s u t t n h a o Pv t r n S C R s
t n g n h a n h k h i d n g q u a S C R t n g v t l v i d c c a I(t). h n
1 cu n i n c m
L vi
m i l n n m c h , tr n S C R x u t h i n m t c n g s u t t n h a o P v,
cng s u t n y l m
n n g S C R v n u iu k h i n S C R n i m c h th n g
x u y n t h e o 1 n h p t n s" n h t n h s d n t i n g u y c p h h n g S C R d o
0 Du b kho, in dung ca
dt
At
t i t h a m
H n h l0 .2 1 b ch r th th a y i ca d n g I v in p U ak theo
th i g ia n tro n g q u tr n h n g t S C R .
C c d n g t n h a o tro n g S C R
204
C 5 dng tn hao l:
1. Tn hao trng thi dn in.
2. Tn hao trng thi chn.
3. Tn hao lc ni mch.
4. Tn hao lc ngt mch.
5. Tn hao do mi.
Khi tn s" cao tn hao lc n v lc ngt c bit quan trng v
lc gi tr ny khng cn nh so vi tn hao trng thi dn. Nu
SCR lm vic vi in p c tn s 50Hzkh xc nh c chnh xc cc
tn hao ny, gi tr ca chng khong 10% tn hao trng thi dn.
10.2.3. Cc thng s nh mc l tham s gii hn
lu
(theo chiu chn tlun c l), theo chiu chn ngc c I|i).
i n tr n h i t
v R tiiu x c n h d n n h i t g i a l p c h n -
v RthO; hay gia lp chn - mi trng khng kh Rthu) in p mi 0; din p U ak gia anot v katot bt u xy ra
lt SCR t ngt sang ni (Ko) xc nh lc UcK = 0
G i tr t c th i cao n h t c a i n p c h n t l n S C R
1 cch
tun hon.
205
(theo chiu dng (vng chn thun) U drmi theo chiu m (vng
chn ngc) U rrm).
G i tr in p xung tc thi cao nht cho php U rsm Dng thun ln nht cho php trong thi gian hot ng lu di It-av
(mch mt na chu k, ti xc nh v thun tr, trong iu kin
lm mt xc nh, tnh theo gi tr trung bnh s hc).
D n g n h tu n h on cao n h t cho php I trm-
R.i i '
A<
..
----- r
u vo Uq^
iu khin i
o------- *.
206
i/
t
gc
il
N :/1
'
922 U -
^Z3 U -
!
i
i
j
i r
gc
gc
....
11
1
1
L..
Liiv,
'
il
pv cng sut ra
cng nh, phng php ny t gy nhiu hn v c dngnhiu cho
cc mch chnh lu c iu khin vi cng sut ra ti ln.
208
-------
MI
T"
r
u
1
ZTh,
2 ^ -0
Thristo ph
(iu khien
ngt Tbi)
^27,
(-96V)
98V
looy
^2V)
5
ov
Hnh 10.29. Gii thch hoat ng mch
iu khin vi SCR chnh v SCR ph.
Cu to v hot ng
Hnh 10.30 l cu to c bn ca mt Thyristo 4 cc. im khc
bit c bn v cu to l c 2 cc iu khin Gi v Gg. Vic mi SCR c
th thc hin bng xung mi dng a vo G] hay xung mi m a
vo Ga iu khin SCR 4 cc lt sang trng thi dn (in tr thp) c 3
cch tc ng: mi vo Gi hoc vo G2 hoc tc ng vo c hai cc
iu khin Gi v G2.
U-LKINT
209
G,
O
i
0
sz
l/
-jr
K
10.4.1. Cu to v hot ng
Anot
a
pnp
nh
^
l/
a.npn
ln
xz
K
<K
Mch thay th
tng ng
K hiu
Nu ch to c GTO - SCR c G g q ln t h k h i yu cu I g q
thp hn do d thc hin hn vi chi ph thp cho mch iu khin
dp SCR.
Dng
i u
k h in
m i G T O
SCR
c g i t r y u
cu
nh,
th n g
khong 0,5% n 1% dng ti. Thi gian n mch v thi gian ngt mch
ph thuc nhiu vo ln dng iu khin v tc bin thin ca chng.
Thi gian lt SCR cng nh khi dng iu khin cng ln v dc (tc
bin thin) ca chng cng ln.
211
212
1800V
v d 400A
2A
lOOA
4
SCR
AK
Ut
Itq
^tail
^n
- Thi gian tr
t(i
t,-
^ngt
- Thi gian np
ts
tf
tail
GTO SCR c dng lm phn t c bn xy dng cc mch
bin i t in mt chiu thnh in xoay chiu (cc b rung hay i
in) c dng kh ph bin trong nhiu lnh vc cng nghip giao
thng, hng khng... c bit trong phn in ca u my xe la l
mt v d.
213
CU HI N TP - BI TP
1.
2.
3.
V dng I - AK ca 1 diot 4 lp v nu c
4.
5.
6.
im ca
dng c
th no
7.
Hy nu tham s nh mc ca SCR?
8.
9.
214
tuyn.
kt hp.
215
Chng 11
DlfiC V TRIfiC
11.1. DIAC
216
10 ........... _A
-U
bo
/b o
10 20 30 (Jfeo ^
\
Thc ra do tnh xng khng l
'10
\
tng, hai gi tr in p m theo hai
hng cng lch nhau t th cht lng
ca diot hai hng cng tt. Khi chng
Hnh 11.3. c tuyn I - u
ca diot 2 hng.
khc nhau v m un ta c tham s
lch xng s (tnh bng Volt).
* Gi tr c th ca cc tham s danh nh:
. in p m U bo = 32V
Dng in m I[J0 = 50fiA
in p duy tr Uii = 20V
lch xng s = 3V
* Cc tham gii hn gm; Cng sut tn hao cho php ln nht.
Ptot v d = 0,5W
Dng xung cho php ln nht Ip,ax = 2A
ZSZ
Nhit v cao nht T,x = + 100C
Nhit v thp nht T,in = -4 0 c
X
P
-u,BO
/u-
S3
Hnh 11.9. K hiu thyrlsto
diot 2 hng.
11.1.3. ng dng
n
p
n
p
p
n
p
n
i
n 1 I p
p 1__
n I
...
1p
-0 G2
___ 1L L .
Thl
Hinh 11.11. Hp nht cch u song song i
u hai SCR vo mt ming tinh th.
Th2
Hnh 11.12. C u tr c 2 S C R
trn mt tinh the.
dng, xut hin dng iu khin Igf Tuy nhin i vi SCR Th2 y
khng phi l cch iu khin mi n hot ng. e thc hin vic
mi Th2 mt vng dn in loi n nh c cy thm ngay trong
cc iu khin (hnh 11.14) v mt vng tng t c to ra bn
in cc . Khi v cu to xut hin hai thyristo ph c gi
l cc thyristo mi. Nh cc thyristo mi, cc thyristo chnh c th lt
sang trng thi in tr thp vi cc xung iu khin dng v xung
iu khin m. Linh kin c cu to va c m t chi tit c gi
l TRIAC (vit tt t cm t "triode alternating current switch")
ngha l kho chuyn mch dng xoay chiu c 3 cc hay tn gi theo
cu to l thyristo 3 cc hai hng. Cu to ca triac theo mt ct
dc c cho trn hnh 11.15 v k hiu quy c cho trn hnh 11.16.
c tuyn Von Ampe I - cho trn hnh 11.17.
Anot 1
Cc ca
Ai
n
lil "
P Pipl p
n 1n !n| n
^ 1
P
n
p
Thl
1p
1n
! p
__ LL
2 Th2
Min to SCR
ph 1
A 2 Min to SCR
ph 2
Anot 2
Hnh 11.13. Cu to vi
cc iu khin G.
Hnh 11.14. Cu to vi
thyristo h tr mi.
A)
Ai
2SZ
zsf
220
Vng dn
L--- ___________
Vng qu
Um u
/h
Vng kho
Vng qu
(m)
Vng dn
11.2.2.
Cc ch lt ca triac
Az
u
u
T
A1
A2
(-IM sai
A,
Hnh 11.18. iu
^
khin kiu r .
Hnh 11.19. iu
|fl_
khin kiu III".
Ai
1.
Hnh 11.20. iu
Ikhin kiu
u
UA
Ai
Hlnh 11.21. iu
'
1114^
khin kiu lir.
Cc tham s
Cc gi tr v d:
I drom ~ 0,5mA
U tm 1,8V
In
= 15mA
Igx
= 20mA
U g t
~ 1,2V
tgi
= 2 fj,s
Di nhit lm vic
n
(nhit v hoc nhit mi trng)
T m i n -
Cc s liu v d:
OROM= 400V
L,= 15A
I
tsm
lO O A
I gtm 4A
= 100c
= -eo^c
Khi n mch, in tr ca
triac
rt thp (vi Q). Triac trn hnh
11.22
c dng ti ln nht cho php l lOA.
in tr ti nh nht c php mc
vo mch (Rti.) l;
_ u _ 220V
It
10 a
22Q
R.0=22n
=220V
G
Hnh 11.22. Mch vngdng
in dng triac
Trioc
=220V
B iu chnh
sng
Mch
triac
Hnh 11.23.
224
gc
Hnh 11.24.
th
in p tc ng u v dng ti I khi
(minh ho hnh 11.22).
<Pj
= 90
1S-LK OIN T
225
CU HI N TP - BI TP
1.
2.
3.
4.
5.
6.
7.
8.
2SZ
u
220 V
V
p
226
Chng 12
ca quang tr.
7 0 "C
12.2.3. ng dng
Quang in Lr c s dng rt
ph bin trong cc mch iin khin,
iu chnh t ng nh nh sng,
mch o nh sng hay cc t-hit b t
dng dng cm bin nh sng. C th
s dng quang tr trong cc mch
kho chuyn mch quang hoc lm bia
trong cc h thng bin i hnh nh
quang thnh hnh nh tnh in
camera... Nhc im ln nht ca
quang in tr l vic hot ng c
qun tnh ln.
10
10'
229
1
1
i
f
" T
: t
"
Hnh 12.6. Cu to t bo
quang in.
4
i
p
n tinh Si loi p
e - .. ... in t t do
T ,f
........f\"...
1
1
, cD
_ L trng
f f l ----------
Do vng n rt mng, c ph
mt lp trong su"t bo v, khi c
chiu nh sng, cc in t c hp
th nng lng ca photon nn c
gii phng khi lin kt ho tr tr
thnh in t t do v nh tc ng
ca in trng tip xc, chng t
tp ti vng n (hnh 12.8).
Vng trung ho in
in t t
do (tha
in t)
/ ism1
in trng
#
L trng t
do (thiu
in t)
230
; t do
Hinh 12.10. Cu to t bo
quang din Silic loi P/N.
231
^M PP
4.00
1000W /m 2
3.50
.
750 \/V/m2 /
3.00
2.50
2.00
1.50
/
1,00
/
0,50
/
/ 500W /m
---------------- 4-----1
250 W/m2
"N
\
\ \
0,00
0,00
\ \\
\ \\
___
10,00
20,00
30,00
___ 1
40,00
50,00
V
Hnh 12.11a. c tuyn VA ca modun pin mt tri v th cng sut.
110
(10%)
A
V
A
V
3,15
35
3,45
43,5
Nhit danh nh
45
1/K
1/K
+4.10-''
-3,4.10-^
\f^pp
U|^pp
lsc(**)
Uq
Tham s gii hn
Nhit bo qun
Nhit mi trng
p lc b mt
-40 + 85
-4 0 + 50
c
N/m^ 2400
iu kin lm vic lu di
Di nhit
m
-40 + 85
85 tng i
Thng s c kh
Chiu di X rng
Chiu cao
cao cc mi ni
Trong lng
mm
mm
mm
kg
1307x652
5
42
9,5
nh sng ti
CdO.
Seien -
/ / /
Lp
chan
Ni
Fe
Hnh 12.11, Cu to pin
quang in Selen.
233
100
/
'x
\\.^Si
nh sng n si nung
50
10
02
04
0.6
0.8
10
V2
.
1,4
\6
r4:
|jm
Xc nh khi chiu
sng lOOklx.
235
= 1MHZ
Cs= 150pF (vi Uij= OV)
20pF (vi U r= 20V, R l in p kho t ln photo diot)
1,1 = 500nA
in p kho cho php (20V n 30V)
Nhit lm vic (-50c n +100C)
236
12.5. PHOTOTRANSITO
12.5.1. Cu to v hot ng
Phototransito l mt loi
transito silic c bit c cu to
trong su"t vi nh sng phn
baz. Hnh 12.19 a Ia k hiu
mt s loi phototransito. C th
biu din mt phototransito nh
cch kt hp mt t bo quang
in hay mt photo diot vi mt
transito nh hnh 12.20. nh
sng tc ng to in p tng
t nh in p phn cc cho
transito v cng nh sng
thay i s iu khin dng
phn cc thay i. nhy ca
E
-
E~
B
c
B
PNPtransito quang
E
NPNtransito quang
(phototransito)
/b
-B
10^
m fw iu
*rYYiw
1 nnniw
10^
300 I k
in n i
\^
10^
Hinh 12.20. Tng ng ca
phototransito.
301
10
15
237
U cE =
5V) lc chiu s n g
d 0,3niA).
Ic h (v
12.6. PHOTOTHYRISTO
12.6.1. Cu to v hot ng
Cu to photo th yristo tng
?A
?A
p
n
p
n
)
n
13
r"i
AK
t nh th y risto gm 4 lp xen k
pnpn vi 3 cc ra anot, k atot v
cc iu k h in G (h n h 12.22).
v n g chn th u n , ch u yn tip pn
nm giia b kho. Q ua ca s
trong su"t, khi c nh s n g ch iu
vo v n g ny, n n g lng photon
lm g ii phng cc quang h t n n
lp c h u y n ti p g i a c h u y n sa n g
>5^
G
o-
<
238
scs
c c h
to vi m c ch c th iu k hin ngc SC R t tr n g th i
in tr
(so
b) N h 1 x u n g dng vo Ga
vi K).
( so
vi K).
Ga
--o
iK
Hnh 12.25. cu to
ca photothyristo 4 cc.
fjm
Hnh 12.26. Quan h cng sng mi
ph thuc vo ln ca in tr Rq^.
239
E2
Vng dn
Photon =
^' 0 0
Vng ho tr
240
En
E2
e -e - - G - Q o
Vng dn
Photon
Photon
E1
e -Q--.-0
Photon
Vng ho tr
(3V)
N h i t ti th iu v t a ca mi trng lm vic ( -4 0 c n
+ 100"C).
L E D c s d n g ch y u l m n ch th s
(loi 7 vch) h a y cc m a tr n q u n g co tr a n g tr
in t. K hi k t hp cc L E D t n g c m vi 3 m u
c bn: , xanh da tri v xanh l c y thn h ma
tr n cc im n h c th t o ra cc bc n h m u
in t kch thc ln th h i n cc m u t n h in
th eo n g u y n l trn m u n h tron g cch to n h
m u c a k th u t tr u y n h n h .
le-LKDINT
241
242
l()''Hz (GHz) c s dng hiu qu trong vic ghi m v ghi hnh trn
cc ph n t nh quang nh CD v DVD iu c h q u an g trong cng ngh
truyn dn cp si quang...
12.9. SI QUANG DN
V ic tru y n tn h iu din nh dng in trong cc cp ng gp
n h iu nhc im c b it l vn su y h ao trn ng tru yn vi
k h on g cch xa v du n g lng thng tin b h n c h do tc tru yn t i
tin tc b h n ch, ngoi ra in cm v in d ung k sin h ca cp hn
c h d i tn s d n g cp chi ti vi M Hz. V ic s d n g cp si q u an g
thc h in vic tru yn dn tn hiu di dng sn g n h s n g tron g si
cp q u an g m a n g n cc u th v cng to ln so vi vic d ng cp
ng tru yn th n g. Cu trc kh ca m t ng tru yn dn tn h iu
d n g cp si q u an g dn c cho trn h n h 12.34. D n g tn h iu gc
qua b in i tng t - s" c chuyn i th n h d y b t 0,1 (cc xu n g
in p) sa u c k h u ch i, gia cng x l trc k h i tc ng vo
diot L aser b in ch n g th n h cc xu n g n h s n g v c a trc
tip vo cp si q u an g tru yn dn trn n h n g k h on g cch xa (ti h n g
chc n gn km ) vi mc su y hao Lh]) v c b v s a hi phc nh
cc trm lp v b k h u ch i quang trn ng tru yn ca cp. T i
du cul ca cp si quang phototransito h ay photodot c s dng
bin i tn h i u q u an g v li cc xung in ban u trc k h i c hi
phc qua b in i S -- tng t thnh tn h iu a n a lo g ban u. Si cp
q u a n g c cu to gm 2 phn: li (si q u an g dn) v v bo v; ch it
su t q u a n g ca ch n g c la chn xy ra h in tng p h n x ton
phn ca tia s n g trong phn li (khng th o t ra p hn v c). N h
d tia s n g do L a sei pht ra c t'uyn ch tron g li cp vi mc su y
hao th p (c 0 ,0 5 n O JdB /km ). th h n h 12.36 m t mc su y hao
tnh theo dB /km ca hai loi cp (ng (lng trc v cp si q u an g theo
tn s dn G H z. Cp si q u an g c vu dim ln l k h n g b n h hng
ca n h iu s n g in t v trong n h iu trng hp vic ghp quang
gia d io tla ser v photodiot l mL phng php cch ly in l tng.
Tn hiu
A/D
ltng t.
0110101001
Tn hiu s
L U
u vo
tn hiu B bin i
B khuch LD
tng t so - tng t
i
L - i l j Tn hiu s
quang cian
g
s - tng t
____
au ra
tn hiu
c s
0 khuch dung
i
243
Tia sng
Nhc im c a cp si q u an g l h in tng t n x n h s n g gy
ra m o d n g tn h iu xu n g (gin x u n g v m t th i gian) v c th lm
m t (li) b t (h n h 12.37) ng th i x y ra cc h i u n g p h k h i ghp
nl cp si q u an g b n g phng p h p h n c b i t l h i n tng su y
hao cng tn h i u quang (h n h 12.38).
km
244
tm trc qang si
Hnh 12.38. Hn cp quang
Li vo
Li ra
B pht
quang
B thu
quang
12.39.
Li vo
Li ra
Photodiot
Li ra
Li vo
Thyristos quang
245
^ 7.6 i 0,2--
>
o
- . K K , -
Q5xQ25-
2.54
__
1
4
fk E
e U 3.
Q O
7.6TS5.
TST'QTar
t
____________
f
- lasit------- S2.0.3
246
B gh p q u a n g
H s bin i dng in Ic/Ik = 80 n 300
in p th cch in U|,= 4000V
T n
SC)
gii hn f = 1 0 MH/,
CU HI N TP - BI TP
1.
H iu n g q u an g in trong cc ch't bn dn q u a n g l g?
2.
3.
P hn b it gi tr in tr t v in tr sng ca m t q u an g in tr.
4.
T bo q u a n g in lm vic nh th no? G ii th ch s x u t h i n
sc in ng quang.
5.
6.
H y p h n b it photodiot v phototransito?
7.
8.
9.
B gh p q u a n g l g? Cu to ca b ghp q u a n g gm n h n g ph n
t no ?
247
Chng 13
/e
t
Hnh 13.1. in trng thun
nht t ln my pht Hall.
13.1.2. in p Hall
in p H all x u t h i n trong m h n h 13.2 c n g ln k h i cc ph in
cng m ng, k h i cng dng in c n g ln v k h i m t t thng
cng ln. N g o i ra ln ca in p H a ll cn p h thuc vo lo i v t
liu dn lm cc p h i n in cc (h n h 13.3).
248
K t qu n g h in cu hiu ng H all
d n ti h th c.
y U h l in p H all x u t
h i n do h iu n g Hall;
R h h n g s H all.
I d n g ch y qua p h in cc.
B m t t thng,
d B d y cc phin cc.
Rf[ p h th u c n n g cc h t dn t do v lin h ng ca chng,
v d vi cc v t liu kim loi c Rh~ 10"m^/As n n h iu n g H all x u t
h i n yu. Vi v t liu bn dn, h n g s H all ln hn.
V d
R n ~ 120.10m/As
Z.B. 6mm)
Hnh 13.4. a) th quan h Un - B; b) Kch thc ca mt my pht Hall dng mt phng.
Khi ch n ch iu di c v ch iu n gan g a ca p h in u n h a u (c = a)
in p H a ll x u t h i n ch t gi tr 75% tr ln n h t. K hi chn c
ln hn a (p h i n cc ca m y p h t H all va di va m ng (vi i-im)
249
h iu n g t cc i. H n h 13.5 a ra cu to v k h i u quy c ca
b p h t H all. V t liu lm cn chn lo i c dn t t t (v d loi
Fei t m m ). B p h t H all l m t ngun c ni tr k h o n g l IQ n
42 tu th u c k h on g cch cc p h in cc v kch thc ca chng.
3
K hiu:
1, 2. Cc cc iu khin
3, 4. Cc in cc Hal
Hnh 13.5. Cu to v v tr b pht Hall.
(v d 600m A ).
U ]I2 0 .
3AT
13.1.5. Cc ng dng
C th a ra 5 ng d n g in h n h c a b p h t Hall:
1.
o m t t thng B. Khi gi dng in iu khin c" dnh, in p
Hall t ] vi m t t thng B. B pht Hall nh (kch thc zmm X Imm)
dng o t tritng khng ng nht. H nh 13.6 ch ra nguyn l o
dng in 1 chiu, Lng hai in p H all t l vi cng dn:^ in.
250
Dng iu
khin c inh
Dng iu khin
(khng i)
B pht Hall
B pht
B m
xung
Dy dn c dng 1 chiu cn o
V//777777//7W /777//777/.
13.2. T TR
T tr l loi in tr bn dn c gi tr in tr th a y i c nh
s iu k h in c a 1 t Lrng ngoi tc dng. T tr c k h iu quy c
cho trn h n h 13.8 v cu to cho trn hn h 13.9.
zzry
B
Hnh 13.8. K hiu t tr
(in tr t).
Hinh 13,9. Cu to ca 1 in tr t.
251
13.2.1 Cu to
T tr c th c ch to t v t liu s t t
(loi E) h a y t v t liu n h n to (loi K). loi E,
c s d n g l loi v t liu s t t F ecm aloi c
t th m ln. Loi K c cu to t gm h ay
m
v t liu n h n to. T rn dy c 0 ,lm m , m t lp
Hnh 13.10. Lp hnh
A n tim on it Indi dy c 25|LLm c ph ln. T rn
un ln ca 1 t tr.
lp InSb n y c p h c c kim lo i l m t N ik e n
A n tim on it c dn in tt nh ca kim loi (xem trn h n h 13.9).
N hiu loi t tr c lp b m t dy c dng gp kh ic nh hnh 13.10.
Khi k h n g c t tr ng tc ng, gi tr in tr c a t tr c v i Q
n vi k tu th eo k ch thc cu to ca ch n g.
13.2.2 S bin i in tr ca tr
H ot ng ca t tr c g i i th ch th n g q u a cc h n h 13.11 ^n
13.13. K hi cha c t trng ngoi tc ng (B = 0), d n g ch y trn
in tr t l th a n g gc nh h n h 13.11. K hi tc n g t trng ic
cng nh, dng c d n g h n h 13.12 v khi c n g t trng ln h n h 13.13. H in tng xy ra do h iu ng H a ll l m cc h t d n di
ch u yn di tc ng ca t trng lm dng in ch y gi a cc kim
dn in c d n g r n g ca (cc kim N ik en A n tim o n it c v a i tr nh cc
on dy n gn m ch) k h i lc tc ng li d n g in t cn g ln (do
cng t trng c n g ln), dng in rng ca c n g m n h nh th
h in h n h 13.13. S t n g ch iu di ca ng d n d n g in lm in
tr ca t tr tn g.
/ / / / / / / /
Hnh 13.13. Khi c t trng ln tc ng.
252
th h n h 13.14 ch ra
s ph th u c ca in tr ca
t tr vo m t t th n g B.
C hiu c a
t trng k h n g
lm n h h ng ti gi tr
in
tr ca t tr. Q u an h
gia
dng in v in p trn m t
t tr n g vi m t gi tr t
t.rng B n h t n h l m t
quan h t,uyn tn h .
13.2.3. Cc tham s ca t tr
C ng s u t t i ln n h t cho php Ptot (v d 0,5W ).
N h i t lm v ic ln
nht
(90C).
(~ lOOV).
in tr gc (k h i B = 0)
S a i lch c a in tr gc
Ro Toi (v d 20%).
i n tr k h i c
S th a y i t n g i c a t tr R b/R o
(vi c n g B v d i 1 T esa).
H s" n h i t (p h th u c vo B)
10)-
a (v d - 0,004/C ).
13.2.4. ng dng
T tr c s d n g n h ch u yn m ch h ay kho k h n g tip im
d n g tro n g k th u t iu k h in h ay iu ch n h . H n h 13.15 th hin
m t p h m n h n d n g t tr v h n h 13.16 l m t t n g k h o dng
tr a n s isto c i u k h i n ni, n g t m ch cho rle nh tc ig t
trng b n n goi.
253
13.3. DIOT T
13.3.1. Cu to
D io t
lm
loi
ch t
bn
dn
G em an iu m , c tip xc cng n gh d n g p - i -
h n h 13.17. in c
b it l n g n cch gi a 2 v n g p h a tp ch t
loi p v loi n l m t m in bn d n kh n g
pha tp v c tn h d n in r i n g do in
tr rt cao ( dn in th p ). T i v n g ny
h in tng t i hp h t d n xy ra m nh nn
cn c gi l m in t i hp (gi l v n g R).
Trong v th ng c h a i diot t c c h to Hnh 13.18. C'u to 1 diot t.
ng th i to ra h i u n g b n h it.
t th n g B tc ng cn g ln. M q u an h iic th h i n
hnh 13.19. in tr ca diot t cn chu nli hng
m nh c a n h i t .
13.3.3. Cc tham s
in p lm vic ln n h t
C ng s u t tn hao cc i
N h i t lm vic cc i
(v d ~ 20V )
Pvm ax
(~ 50m W )
(~ 6 0 c
in p lm v ic U (~ 4V)
in tr gc (lc B = 0) Ro (~2kQ )
254
qua th
13.3.4. Cc ng dng
Do s ph th u c m n h vo nhit ,
diot t th n g c c h to kp c
b n h i t (h n h 13.20). K hi , cn t L
trng B tc d n g ln ch n g ngc cliiu
n h au , s tc n g ca n h i t ln 2 dioL
(lm th a y i in ti-) ca chng l ging
n h au , nh v y 2 c b nh it.
T uy n h in s b in th i n ca t thng
13.4. P TR BN DN
13.4.1. Hiu ng p in
K hi c p lc tc ng theo mt
phng n h t n h ln tin h th p in,
gi a 2 m t p h a n g h ng th eo trc in
s x u t h i n m t in p gi l h iu ng
p in th u n . N gc li n u c m t dao
ng in tc n g ln tin h th theo
phng ca trc in th m t dao ng c
Tinh th
p in
Mng'^
Hnh 13.23. Nguyn l cm bin
p lc dng hiu ng p in.
255
13.4.2. Cht bn dn p in
T hi g ia n g n y, m t v i c h t bn dn c h i u n g p in m n h
c n g h in cu v s d n g bn c n h cc v t li u tru y n thng. Trc
y tin h th Q u artz (th ch anh), m ui S e c n h e t, B a r itita n a t... l cc
v t li u p in tru y n th n g vi. in p x u t h i n do h iu n g p
in c v i V olt k h i c s th a v i p lc m n h . V t liu mi c h to
t hp c h t m ui a tin h th Ch K m T ita n c k h n n g cho in
p ti c n h iu k ilo v o lt k h i c p lc m n h tc ng (hp ch t n y cn
c tn gi P iezo x id e hay V alvo).
M icrofon s dng v t liu p in V alvo h o t ng trong di tn
rng n gii h n di sn g siu m (vi chc kH z). C th s d n g V alvo
lm cc b lc hoc m i cho qu trnh phng in ca cc.t kh.
256
Bn thu tinh
B lc phn cc v
lp vt iu ph
cht gi
B c phn cc v p
ph trong sut (gng)
Cc in cc
oxyt km
to ra h iu ng lm
c tin h th lng, nng
lng cn th it k h nh - c
O.lt-tVV/cm" b m t lm c.
Mt phng trong
sut vi nh sng
Hiu ng lm c tinh th
lng cn c lm m nh
thch hp vi yu cu hin
th quang. C n h iu cch
lm r n t vch c, tuy
nhin hiu ng d n g b lc
phn cc c tng phn
nh l tt nht. Sau tm
phn cc h iu qu s n g tl l
r nt, c th h in qua
gng phn x (h n h 13.24).
H nh 13.25 a ra m t b ch
th LCD 7 vch hin th
cc s' thp phn v vic k t
hp ch n g to ra m t b
ch th 4 docac th p phn
hnh 13.26.
17-LK IN T
257
T ham s ca LCD:
in p lm v ic cao n h t
Bmax (k h on g 8V)
f ( t 30H z n lOOH)
N h i t
T (25C)
D n g in trn m t vch
Is (lOnA)
D n g t n g cn g
(70nA )
T in t n g
Ctng 5 0 p F
Thi g ia n tr ni m ch
t-, 8 0 m s
ttru c
Thi g ia n s n sa u
t3 2 0 0 m s
N h it bo qun
lOOms
N g u y n l iu k h i n ng:
M t nhm tin h th l n g loi khc c tn h dn in . Khi ch u tc
ng m t in p xoay ch iu , bn trong tin h th c 1 b phn nh
ch u yn ng v gy h i u n g tng t lm c p h n ch u yn ng ny
v k h i c ch iu s n g s c h iu ng s n g ti (tng phn) vi cc
phn khc cn li. N h m tin h th lng d n g n y c gi l nhm c
iu k h in ng. iu k h in hot ng ca nhm , d n g c ch th
258
Xung tc
t , Y
Thi gian n gt
(2,8nA).
400m s.
lOOOms.
259
B lc phn cc
B lc mu
phn cc
o
o
o
Ngun
sng
nh sng cha
phn cc
Kho
B c phn cc
Ngun
in p
Lp tinh th lng
in trng u
/Tinh th dng u
o
o
o
Ngun
sng
nh sng chsi
phn ct
Tinh th lng
khng lm quay
nh sng phn Cc
nh sng
phn cc
Kho
260
B lc mu
phri cc
261
n n g iu k h in c 2' = 2 6 2 1 4 4 im m u k h c n h a u . iu n y i
hi p h i n n g cp d liu ra ca b b in i AD.
M n h n h LCD ngy cn g c h on th i n v c gi tr th n g
m i, vi k h on g 6,22 triu im nh. tng p h n t c 1200; 1
v s n g t ti 600Cd/m^. Thi gian tr cn l i c 8m s.
Xanh l cy
Xanh da tri
in cc trong sut
Xanh l
Kh tr tch in
Lp phospho
Lp in mi
in cc u khin
Knh mt pha sau
262
CU HI N TP - BI TP
1.
H y m t h iu ng H all.
2.
3.
4.
5.
G ii th ch cu to v hot ng ca t tr - S th a y i in tr
ca 1 p h n t t tr khi t trng th ay i xy ra n h th no?
6.
G ii th ch chc n n g ca diot t.
7.
8.
9.
263
Chng 14
CfC DNG
c IN
vd DNG c lON
Katot
Si
nung
tng trn c gi l s p h t x n h i t in t.
Cng p h t x (s" lng in t c p h t x n h i t to ra) ph
thuc vo bn ch t v t liu kim loi (gi l cc k atot) vo n h it
nu n g n ng k a to t v vo d in tch b m t p h t x (h n h 14.1). T hng
b m t k a to t c ph m t hp ch t thch hp gim cng th o t in
t v qua t n g h iu qu p h t x n h it.
0 gi l v n g ch n (Sp) dng la = 0
V n g u., < 0 cc in t p h t x n u c tc ch u y n ng n h it
ln c k h n n g n c A not I 0 v nh (v n g A).
264
u t n g .
V n g bo ho (S), u
Anot
0
-< I>
Anot
^^Katot
V
(nung^
trt; tip)
K hiu
T on b cc in t p h t x u
th a m gia vo d ng in , Ig k h n g t n g
th eo u,, c n a. M un t n g dng Ig
cn t n g n h i t n u n g n n g k atot.
D iot ch n k h n g c dng lm dng
c dn in th eo 1 hng (van ch n h lu)
trong cc m ch in; tc ng vo l xoay
ch iu v dp ng l 1 ch iu .
-Q
Cc li
o
Katot
(nung trc tip)
_r
T
r
Hnh 14.7. Mch o c tuyn I3 - u,
v L ca triot.
265
in tr tron g ca triot
(khi AU^ = 0)
H dn:
(khi AU = 0)
H dn
H s tri nh gi n h h ng ca in p a n o t ti in p li
iu khin ;
266
R: =
AU,
AI,
Do R.S.D = 1 (t y th n g
tn h c th a m s th 3 k h i
s=
R.
R.S.D = 1
b it h ai th am s kia).
D
A u'
Ro
\
il-H
Hnh 14.10. Mch gii thch nh hng ca anot.
Vi R = 20kQ;
y la = 0 v
u =
U |
-6 V
200V
ov
-4 V
175V
25V
l,2 5 m A
-2 V
134V
66V
3,3 m A
-o v
90V
liov
5,5m A
Hnh 4.11.
267
K hi lm vic in p an ot Ua ca
Lriot th a y i theo tn h iu t vo li
d iu n y do h iu ng ghp ngc trn h
s" s gim th eo c tu y n lm v ic gi l
c tu y n t i ng (hnh 14.12) c a triot.
H dn ng S ) xc nh th eo t ng
im lm v ic trn c tu y n t i ng:
S d = s.
Ri + R.
S; h dn tn h
R;; in tr tron g ca triot
R^; in tr ngoi m c t i anot.
14.3.4. H s khuch i in p
H n h 14.13 th h in m ch
d ng triot k h u ch i in p
xoay ch iu . Q u trnh iu k h in
ca in p Ujj ti dng la c
th h in qua th h n h 14.14.
Li vo
T heo n h n gh a,
h s
k huch i in p V c xc
n h theo
Hnh 14,13. Mach khuch i dng trlot.
(C gi tr th ng gp t 20 n 60)
268
-n u
80 ;
I
J W
ot
14.4. N 4
Ug
ti
Ig.
in cc th 4 c n g c6 dng li hnh tr nm
gia li th n h t v anot c b su n g vo hn
c h n h h ng c a h in ng ghp ngc ca triot.
Li 2 c cp in p gia lc
khong 50% n
c gim ti
mc nh n h t (li 2 c tc dng nh mt m n
ch n n g n n h h n g ca u ti Uj,) khi u,, cha
ln v cn th p hn
G2
Hnh 14.15. K
hiu tetrot (n 4
cc chn khng).
x y ra hiu n g p h t x
u , Li Uv, i!i.v l
14.5. N 5
N u t gi a li 2 v anot in cc li th 3 c in th o v th
trn thc t c th loi b hiu ng D inatron ca n 4 cc (hnh 14.17).
269
Cc th am s quan trng;
H dn ca c tu y n I - Ugi:
(A = 0)
H dn ng
in tr tron g ca pentot:
(AU,, = 0)
do ., t ph thuc vo
tron g v n g
c gi tr rt ln trong v n g ny.
A U .
D =
U a
ln n n
ca p en to t
AUa
Do v y h th c ( R . S . D as 1) k h n g d n g cho p en tot.
H nh 14.19 v 14.20 cho cch xc nh cc th am s" s v
tu y n ca p en tot.
trn c
270
Hnh 14.19. Xc nh h dn
n s ca pentot.
gi
H s" k h u ch i in p: in p cn k h u ch i c bin g
t vo cc gi, trn an ot s nh n c in p ra , k h i h s"
khuch i in p c nh ngh a V =
V SRl
271
hng ca in p
ti in p li Ug g n n h b n g 0, p e n to t c
g iT i
2 n 3 cc v 7 cc cu
n 6 cc
Ct u khin
Li hn ch
dng trn mn'
Tin cc
^Aot (h triot)
.u . J
,N - . ^
^Li {h triot)
Hnh 14.23. cu to
n ch th.
H thng iu
khin tia hi t
I------------
cc b phn c h n h sau:
H thVig t o tia in t.
H thVig h i t tia.
H th n g l i tia.
H thng to
tia in t
H thng li tia
Hnh 14.25. Cu to kh ca mt
ng tia in t.
V th u tin h kn v m n h n h p h t quang.
w iu k h in cng
tia in t. Cc iu k h in c cu to d n g c b i t vi 1 l h p hng
v tm m n h n h cho php dng tia in t ch u i qua k h i c gia t"c
(c gi tn l tr W eh n elt). in t p h t x n h i t b t khi k a to t to
th n h m m y in t bao quanh k a to t v ch u s iu k h in ca
1 in p m trn cc iu k h in . in t c g ia tc nh in p trn
272
Anot
a n o l 1 c ln v ^ tr m V dn 2000V lc ng
ti m m y n h i t in t th n g qua l trn cc
----------
di k h in tr (h n h 14.26). in trng ca
cc cc Aj,
to ra m t th u knh tnh in c
^
>
m n h n h . H thng trn cn c gi
o
l-s/Ti I^
'^
Cutu
khin hnh ^
tr VVehneit
Hnh 14.26. Cu to h
thng to tia in t.
c h u n g l m t su n g in t (cn c th hi t tia
nh(J t trng do cc dng in chy qua cc
in trng
(4kV).
H th n g trn c m t nh ] m t th u k n h
q u a n g in t th n g c 3 hoc 4 anot gia tc
v hi t tia. H n h 14.28 cho m t v d v cu
to mt h th n g th u k n h q uang in t h n h
(.OV)
{*4kV)
Hnh 14.28.
cu to thu
8OV
50V
h ay t tr n g l m th ay
i qu o tia in t, qua
th a y i im n ca tia
Cp phin to
trn m n h n h nh h thng
cc phin l m lch th eo h ai
ch iu nm n g a n g v th n g
ng (hnh 14.29 cho loi iu
18'LK IN T
Cp phin -L
m lch ng
-L
ch ngang
c o la
273
Cc tr VVehnelt
inoi
Mn pht
quang
n lilll 1
^ liii
K hiu ca ng
274
275
o-
K
Hinh 14.34. K hiu
diot c khi (gasdiot).
14.8.2. n 3 cc c kh (Thyratron)
Tng t nh triot, n u b su n g th m 1 li tr kim loi gi a
k a to t v a n o t ca n 2 cc c k h s n h n c loi 3 cc c k h hay
th yratron (h n h 14.36).
in t h m t ti cc li c kh n n g iu k h in dng i n t
p h t x t k atot. K hi m un m i n cn c in t vi vn tc ln
hn h ay in p an ot cn cao hn.
in p li cng m th in p mi Ug2 cng ln (hnh 14.37)
im mi n c th la chn theo in p t ti cc li.
276
277
i u k h in th y ra tro n d n g x u n g iu k h in .
P hng php x u n g c th th a y i gc m i t 0 n 180 (h n h
14.39). in p m t vo li ln trong su"t c chu k vo
th yratron k h n g c mi nu k h n g c xu n g iu k h in . T i thi im
iu k h in , xu't h in x u n g in p cc tn h dng dch pha so vi tn
h iu vo (in p cn ch n h lu) 1 gc t 0 n 180 qua th a y i
dng in v cn g s u t tru n g b n h (1 chiu) trn ti. N g y n ay cc
chc n n g h o t ng ca th yratron c th a y t h h u h t bng
th y risto (chng 10).
1
Mach to
xung
-cz>-
14.8.3. Ignitrn
c dng in ln, nu d n g kh n n g p h t x n h i t ca k a to t s
b hn ch, khi c th d n g loi k atot th u n gn vi dng in n h n
c: trn t i r t ln. H nh 14.40 cho k h iu quy c ca n Ign itrn
v m ch ch n h lu d n g Ignitrn h n h 14.41. Ign itrn c lp v b n g
kim loi c k h n n g cho dng in ch n h lu cng ln ti 20.000A .
h n ch" d ng trn m ch ra (anot) v Lrn in cc mi cn d n g cc
in tr h n d n g n h h n h 14.41.
Rj_ Li ra
Rs
s
----------- - - 0
278
Hnh 14.41.
14.8.4. n hin th s c kh
n h i n s c k h (hnh 14,46) c k hiu quy c (h n h 14.42) v
c tu y n V on A m pe (hnh 14.43) thuc n h n n k a to t l n h do
in p m i xy ra phng in cao hn loi Kf;tot nng. Cc th n g s"
thng gp ca n ch th loi ny l:
in p m i (t 80V n 150V).
in p duy tr (t 70V n 140V).
D ng k a to t (t 2m A n lOmA).
n h in s" c kh dng ch th (hin s) cc s thp phn, khi
ch to cc katot ca n c dng cc s thp phi s pht sng ch
lm vic (chn 1 trong 10 in cc dng s" lm vic) hay loi G azotron
dng n n h in p 1 chiu nh th hin ti'n hnh 14.45.
mA
Rs
10
u
f-%r*nn100
uz
Hnh 14.42. K hiu n.
n p c kh (Stabilitron).
U2
279
t do di d n g p h t x khi b m t v t li u gi l q u trn h p h t x
q u an g in h ay h iu ng q u an g in n g o i. T h ng v t liu p h t x
c c h to d n g in cc k a to t quan g, k h i c ch m n h s n g th ch
hp tc ng, cc in t c p h t x to ra tro n g t b o q u a n g in
chn k h n g (h n h 14.48) m t dng in k h i c in p dng t vo
anot. H n h 14.47 a ra th n h y p h ca m t s' v t liu lm k a to t
q u an g in nh K ali a tin h th , hoc m t s" hn hp O xyd e S e si, B ari
h ay A n tim oan ...
Kali
tinh th
Katot
hp cht
.
Katotcanxioxyt
Chn khng
, Anode
nh sng ti
12
cu
Hnh 14.48.
to t bo
quang in chn khng.
in
ngoi
m nh.
cng
s n g
hay
q u an g th n g () c cho trn
im
Hnh 14.49. Quan h Ip vo cng
sng ca t' bo quang in.
h n h 14.4 9 th h i n l quan
h tu y n tn h Ip= K.(). y Ip o bng |0,A (10"*^A) v () o bng lu m en .
in p anot cu n g cp khong 80V n lOOV (h n h 14.50). Ml q u an h
280
I|.. v
14.9.3. T bo quang in c kh
N u tro n g "ng cu to ca l bo ch n k h n g c
Anot
bm kh tr vi n n g th p s n h n c loi t bo
q u an g in loi c k h vi n h y q u an g cao hn ca
loi ch n k h n g (n 200./lm ). Q uan h Ii,.(()) ca
loi t bo q u a n g in c k h d n g tu y n tn h v
cing I|,- t n g khi c n g s n g () Lng. c tu yn
Von A m pe I|r u,, dc cho t-rn h n h 14.53.
\
Katot
Hnh 14.52. K
hiu t bo
quang in kh.
281
CU HI N TP - BI TP
1.
2.
3.
H y m t c tu y n Von A m pe la - a ca diot
c h n k h n g v gii
th ch n gh a.
4.
G ii th ch cu to v h o t ng ca triot.
5.
D ng an ot ca triot c iu k h in nh th no?
6.
7.
V m t m ch k h u ch i in p dng triot.
8.
Cu to ca P entot?
9.
t tr ng hi t v
li tia ?
13. P hn b it loi d n g c in t ch n k h n g v d n g c c kh.
14. H in tng ion ho do va chm trong ch t kh? H y v c tu yn
phng in ca chL k h tr.
15. Cu to v h ot ng ca thyratron .
16. N g u y n l h ot ng ca t" bo q u an g in ch n k h n g ?
17. H iu ng q u an g in ngoi l g?
282
h) 274Q 2%
i) 1 3 ,8 0 1%
k) 4 ,32k Q 1%
9.
Vng 1
Vng 2
Vng 3
Vng 4
Vng 5
a)
Cam
Tm
Vng
Bc
Nu
b)
Xanh lam
Xm
Nu
Cam
c)
Nu
Nu
Vng
en
Xanh lc
d)
Xanh lam
Vng
Xanh lc
e)
Vng
Xanh am
Vng
Nu
f)
Tm
Nu
Xanh lc
Nu
10 n 15: X em sch
16. Xcm h n h 2 .20
17 (ln 19. X em sch
20. AR = 6,6 1 5 Q ,
= 496 ,615Q
1=
R=
u
,c
u
I
_ ( 20 '.-'
\2 ,
20V
2,55 ImA
A - 0,1667
2.551mA
-7,840kQ
283
b)
1=
c;
lOOV
I
544,5mA
= 183,65Q
Chng 3:
1 n 4. Xem sch
o.
~ CoQ.Ot(;*^^V
2
A
..................
w = 2 2 2 ,75W ,
18.
= RC = lO.lO^^Q 6800.10-" Y
X = 68 .00 0S
T hi g ia n phng in 5x = 3 4 0 .0 0 0 s = 9 4 ,4 4 gi
S a u 9 4 ,4 4 gi (tng ng k h on g 4 n gy m ) t p h n g h t in,
19.
Xc
coC
1_________ _ 100.0 0 0 ^
Xc =
6,28.47
= 3 3 8 ,8Q
R = X^.tg = 3 3 8 ,8 0 .0 ,0 2
R = 6 ,7 7 6 ; Q = = _ 1 _ = 50
tgS 0,02
20.
284
c,
1
+
1
---------H -
...L- J_ i_+J_ - -
= 0,07673
nF
c , = 13.03nF
j_ _
21.
J_
c ~ ' c c , '
c,
J
"
__L_ 1 f _ l ____ L_
nF
c~" V359 1000
c , = 560n F
22 "n 26. Xem trong sch
L _L__L
27.
" L,
1",
L, ~ U o ^ '100 ^ 1000 J mH
Lp = 1 6 ,3 9 m ll.
c ,. =
28.
= A ^ _|.iF - 2,4^F
c , c ,
4+6
Chng 4
1. Xem Irong sxch
2. L -
2 ttRC
6,28.100114,7.10
10'
6,28.100.4,7
Hz
-9
1.000.000
6.28.4,7.100
kllz
fg = 3 3 8 ,8 k H z
3. Xem tron g sch
4.
1
R
6,28.220.10
5.
2nL
285
L =
8Q
6,28.300-s
L 4,246m H
6, 7. Xem trong sch
8.
coL = - > c =
0)C
co^ .L
SOOOmH
628-300
c =
39,44.361.10".2.i0
= 3 5,12n F
1^
6,28.19.000iJ ,2.10-'Qs
F = 0,03512f.iF
10.10~'''Qs
2nVLC
J
2W l0.10'"ns.47.10""Ss
___________________________
_______________________________
1
_
1000
= ------ =
_ .M Hz
6,28V47.10' 6,28.21,68
1 = -------- =
f, = 7,345M H z
16 n 19. Xem trong sch
Chng 5
1 n 26. Xcm trong sch
0,9V
I
=^ = 2 .i 6 n
AIp
286
lOOmA
185mA
Chng 6
1 n 6. Xem trong sch
7. X em trong sch v h n h 6.1, 6.3
8 n 13. Xem trong sch
14. a) z . D iot k h n g b qu t i
u , = 20V + 2V = 22V
u,. = u , - Uz = 22V - 8V
tol
8W
8V
14V
-lA
>-------
I..... = 5 m A
Uy
, _ v _ 14V _ , . ^
I =:_=.LZ_L.::3l,4A
' Rv lOQ
I|^- I ,\ R L niax
Ry=ion.
%
----- -----
hi rZ? Uz
Rl
- 1,4A lA - 0,4A
u
8V
II
0,4A
^200.
b) M ch phi n nh
u , = 2 0 V - 2V = 18V
, = , - U z = 18V - 8V = lOV
I =
'
R,.
R l.ivn
lon
= 8,04f
0,995A
Chng 7
1 dn 11. Xem tron g sch
12. X em h n h 7.23
13, 14. X em tron g sch
287
^KC ~ I(;
Ib"*" q ~ 8 , Im A
kk
= 0,72V + 1.386V = 2 ,1 0 6 V
l,8mA
u ,: (in p trn R|)
u , = U h - Uhc - u , = 18V - 8 , IV - 2 , 106V = 7.794V
u
7 794V
R, = ^
= - - = 3 ,7 1 1 f
In + I^ 2,lm A
16. T n h h s k h u ch i ca m ch h n h 7.61
U
h = hc
+ CB+ u ,
- U c E = U ,c + U ,
U hc + U i,= 1 2 V - 5 ,5 V = 6,5V
IcR c+ I|.;Re = 6,5V
60I|jRc + Gl.In-Rp, 6,V
I b(60R c + 61 R,;) = 6,5V
I
6,5V
6,5V
6 ,5 V
In = 88,83^iA
I c = 601(3 = 5,312m A
288
1,83V
1
3I r
3.88, 53^A
= 6,89kQ
R,
I _______
= J 5 A Z 'N' L ^ 2 8 ,7 2 k Q
I + I
88,53|.lA + 26 5,6^ A
C K =
0,3541m A
U b - U k c - U e = 1 2 V - 5 . 3 1 2 V - 1,08V = 5,608V
20 .
R ihii
W = 1,5W
80
80" c/ w
Chng 8
1 n . X em trong sch
6 . X em m ch h n h 8.19 (tn g k huch i d n g JFETn m c SC)
7
n 12 . X em trong sch
13. M ch tng t h n h 8 .3 9 - T ng k h u ch i m c ch u n g cc
ngun s c d n g EMOSp
14 n 2 0 . X cm trong sch
Chng 9
1 dVi 9. Xem trong sch
Li vo
Chng 10
1 n 11 . Xem trong sch
12. Xem tron g sch
nh c h ai thyritor.
B to xung iu k h in cho SCR v xc n h gc mi.
19-lKIMT
289
Chng 1 1
1 n 7. Xem trong sch
8.
M ch iu k h in m t d ng triac. in p A v s" vn g q u ay
2 tn g (triac c m i m un hn). ng c n h n n h iu c n g su t hn
s quay n h a n h hn. T"c danh nh c t trc nh chn v tr
ca ch it p trong m ch.
Chng 12
1 dn 9. X em trong sch
Chng 13
1 v 2, X em tron g sch
3,
u ,, - R n
I.B
u = . y a i _ 0 ! m \ 8 m ^ Y , 82,8mV
As.0,2mnn.m
4 n 1 0 . X em tron g sch
Chng 14
1 n 6 . X em trong sch
7.
1
1
Li vo
-J (1
8 n 18. X em tron g sch
290
Li ra
MC LC
Li gii thiu................................................................................................................ 3
C hng 1
KT THUT O DNG MY HIN SNG (OXYLO)
1.1. Khi nim chung....... .......................................................................................... 5
1.2 . Cu to v nguyn l hot ng ca my hin sng............. ..............................6
1.3. S dng oxylo..................................................................................................... 10
Cu hi n tp ............................................................. ..............................................1 1
C hng 2
IN TR TUYN TNH V IN TR PHI TUYN
2 .1. Cc tnh cht chung........... ...............................................................................12
2 .2 . in tr c gi tr c" nh................................................................................. 14
2.3. in tr thay i gi tr (bin tr).................................................................... 20
2.4. S ph thuc nhit ca in tr................. ................................................ 23
2 .. Nhit in tr nng v nhit in tr lnh................................................ ...,24
291
Chng 4
C hi n tp - Bi tp .................................................................................................79
C hng 5
DIOT BN DN
5.1. Vt liu bn dn in................................................................................ ......81
5.2. Cu trc cht bn dn tinh th.........................................................................81
.3. Tnh cht dn in.............................................................................................82
Cu hi n tp - Bi t p ................................................................................................. 102
C hng 6
CC DIOT C TNH CHT C BIT
6.1. Z -d iot........................................................................................................................... 104
6.2. Diot varicap (diot bin dung)................................................................................. 110
6.3. Diot Tunen (diot Esaki).................................................................................. 114
292
155
C hng 8
TRANSITO N c c
8 .1. Transito hiu ng trng c cc ca l 1 lp kho (JFET) ......................... 158
C hng 9
CC MCH VI IN T (IC)
9.1. Khi nim chung.......................................................................................................180
9.2. K thut tch hp cc linh k in ............ ................................................................181
9.3. Vi in t s" v vi in t tng t .....................................................................185
293
C hng 10
THYRISTOR
10.1. Diot 4 lp (thyristor diot).............................................................................. 194
10.2 . Thyristor (SCR)............................................................................................. 197
10.3. Th^Tstor 4 c c ...................... ................................................................................ 209
10.4. GTO thyristor................................................................................................ 210
Cu hi n tp - Bi tp........ ............................................................................... 214
C hng 11
DIAC V TRIAC
11.1. Diac.............................................................................. .................................. 216
11.2. Triac.......................................................................................................................... 219
11.3. iu khin dng ti dng diac v triac...................................................... 223
Cu hi n tp - Bi tp......................................................................................226
C hng 12
CU KIN QUANG BN DN
12.1. Hiu ng quang in trong......................................................................... 227
12.2 . Quang in tr .............................................................................................. 227
12.3. T bo quang in v pin mt tri................................................. .......... 230
12.4. Photo diot....................................................................................................... 235
12.5. Phototransito................................................................................................. 237
12.6. Photothyristo.................................................................................................238
12.7. Diot pht quang L E D .................................................................................. 239
294
295