Scribd Logo
Upload

Welcome to Scribd!

  • 1N60 Diodo Zener

    Uploaded by

    urbano-rural
    93 views2 pages
    This document provides specifications for 1N60 and 1N60P germanium diodes. The diodes feature majority carrier conduction, high current capability, low forward voltage drop, and ultra-fast switching characteristics. They are intended for use as detectors in devices like recorders, TVs, radios, and phones, as well as for super high-speed switching circuits and small current rectification. Key specifications include maximum forward and reverse voltage ratings, forward and reverse current limits, junction capacitance, detection efficiency, and thermal resistance. Forward and reverse voltage-current characteristics and detection test circuit are illustrated in graphs.

    Original Description:

    Datasheet do diodo zener 1n60

    Original Title

    1N60 diodo zener

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    This document provides specifications for 1N60 and 1N60P germanium diodes. The diodes feature majority carrier conduction, high current capability, low forward voltage drop, and ultra-fast switching characteristics. They are intended for use as detectors in devices like recorders, TVs, radios, and phones, as well as for super high-speed switching circuits and small current rectification. Key specifications include maximum forward and reverse voltage ratings, forward and reverse current limits, junction capacitance, detection efficiency, and thermal resistance. Forward and reverse voltage-current characteristics and detection test circuit are illustrated in graphs.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    93 views2 pages

    1N60 Diodo Zener

    Uploaded by

    urbano-rural
    This document provides specifications for 1N60 and 1N60P germanium diodes. The diodes feature majority carrier conduction, high current capability, low forward voltage drop, and ultra-fast switching characteristics. They are intended for use as detectors in devices like recorders, TVs, radios, and phones, as well as for super high-speed switching circuits and small current rectification. Key specifications include maximum forward and reverse voltage ratings, forward and reverse current limits, junction capacitance, detection efficiency, and thermal resistance. Forward and reverse voltage-current characteristics and detection test circuit are illustrated in graphs.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 2

    1N60, 1N60P

    GERMANIUM DIODES

    Features
    Metal silicon junction, majority carrier conduction

    DO-35(GLASS)

    High current capability, Low forward voltage drop


    Extremely low reverse current lR
    Ultra speed switching characteristics

    0.075(1.9)
    MAX.
    DIA.

    Small temperature coefficient of forward characteristics

    1.083(27.5)
    MIN.

    Satisfactory Wave detection efficiency


    For use in RECORDER, TV, RADIO, TELEPHONE as detectors,
    super high speed switching circuits, small current rectifier

    0.154(3.9)
    MAX.

    Mechanical Data
    Case : DO-35 glass case

    1.083(27.5)
    MIN.

    0.020(0.52)
    MAX.
    DIA.

    Polarity : Color band denotes cathode end


    Weight : Approx. 0.13 gram

    Dimensions in inches and (millimeters)

    Absolute Ratings (Limiting Values)


    Symbols
    VRRM
    lF
    lFSM
    TSTG/TJ
    TL

    Value

    Parameters
    Zenerepetitive Peak Reverse Voltage
    TA=25

    Forward Continuous Crrent


    Peak Forward Surge Current(t=1S)

    Units

    1N60

    1N60P

    40

    45

    Volts

    30

    50

    mA

    150

    500

    mA

    Storage junction Temperature Range


    Maximum Lead Temperature for soldering 10S at 4mm from Case

    -65 to+125

    230

    Electrical characteristics
    Symbols

    Parameters

    IF=1mA

    VF

    Forward Voltage

    IF=30mA
    IF=200mA

    lR

    Reverse Current

    VR=15V

    CJ

    Junction Capacitance

    Detection Effcienc(See diagram 4)

    trr

    Revese Recovery time

    RJA

    Junction Amblent Thermal Resistance

    Value

    Test Conditions

    VR=1V f=1MHz
    VR=10V f=1MHz

    Min
    1N60
    1N60P
    1N60
    1N60P
    1N60
    1N60P
    1N60
    1N60P

    VI=3V f=30MHz CL=10pF RL=3.8k

    Typ.

    Max.

    0.32
    0.24
    0.65
    0.65
    0.1
    0.5
    2.0
    6.0

    0.5
    0.5
    1.0
    1.0
    0.5
    1.0

    %
    1

    400

    Volts

    pF

    60

    IF=IR=1mA Irr=1mA RC=100

    Units

    ns
    /W

    RATINGS AND CHARACTERISTIC CURVES 1N60P

    FIG.1-FORWARD CURRENT VERSUS FORWARD


    VALTAGE(TYPICAL VALUES)

    500

    FIG.2-REVERSE CURRENT VERSUS CONTINUOUS


    REVERSE VOLTAGE
    IR(UA)

    IF(mA)

    0.70

    450

    0.60

    400
    0.50

    350
    300

    0.40

    250

    0.30

    200
    150

    0.20

    100

    0.10

    50
    0

    0.2

    0.4

    0.6

    0.8

    1.0 VF(V)

    FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS


    REVERSE APPLIED VOLTAGE

    10

    15

    20

    25

    30

    VR(V)

    FIG.4-DETECTION EFFICIENCY MEASUREMENT


    CIRCUIT

    C(pF)

    20
    18
    16

    output
    D.U.T.

    14
    12
    10

    Input:3VRMS

    8
    6
    0

    VR(V)

    CL
    10pF

    RL
    3.8kW

    You might also like