1

Problem Sze 7.1

Calculate the theoretical barrier height and the built-in potential in a metal-semiconductor
diode for zero applied bias. Assume the metal work function is 4.92eV , the electron
affinity is 3.51eV , and ND = 3.0E + 16cm3 , NC = NV = 1025 m3 and Eg = 1eV at
300K.
What effect will interface states have on this result?

1.1

Picture of energie bands for schottky diods

Figure 1: Energy bands for metal and n-doped semiconductor interface. (a) metal and semiconductor sepertated, (b) metal and semiconductor in contact in thermal equilibrium.

1.2

Calculation of the barrier height

The barrier height will be calculated with formula 1.

eM = 4.92eV

eS = 3.51eV

eb = eM eS = 4.92eV 3.51eV = 1.41eV

1.3

(1)

Calculation of Vbi

If a schottky diode is at zero bias the fermi energies of the metal and the semiconductor are
at the same level. The differnce between the barrier height and Vbi is the energy from the
fermi energie to the energie of the conduction band.
Far away from the metal semiconductor interface the energy between the fermi energy and
the concuction band energy can be calculated with formula 2.

NC = NV = 1025 m3

ND = 3.0E + 16cm3 = 3.0E + 22m3



EF = EC kB T ln

NC
ND


EC EF = kB T ln

NC
ND

NC
ND

EC EF = en


en = kB T ln

en = 1.38

J
1023 K

(2)


300K ln

1025 m3
3 1022 m3


= 0.20963eV

The built in voltage Vbi could be calculated from the difference between the barrier height
eb and en with formula 3.

1.4

Vbi =

eb en
e

Vbi =

1.41eV 0.20963eV
= 1.2V
e

(3)

Effect of interface states

The theoretical barrier height calculated from the workfunction of the metal and the electron
affinity of the semicondutor differs from the barrier height in real schottky diods. The reason
for the difference depends on defect states (broken bands, impurities,..) at the semiconductor
surface. This keeps the barrier height approximately at 23 Eg and make it nearly independet
from the used metal.