TM TT L THUYT V BI TP PHN DIODE

MN K THUT IN T
Quan h gia dng in v in p
vi:

I = I S (eV / VT 1)
IS: dng in (ngc) bo ha
VT: in th nhit
: h s thc t, c gi tr t 1 n 2

Hnh 1-1 c tuyn diode phn cc thun

in tr AC (in tr ng)
V 25mV
=
I
I
Ngoi rD, cn tn ti in tr tip xc (bulk) rB,thng c tr s rt nh v c b
qua.
rD =

in tr DC
RD =

V
I

Phn tch mch DC c diode

Ta c th thay th diode trong mch bi mt ngun p 0,7V (nu l diode Si) hoc
0,3V (nu l diode Ge) bt c khi no m diode c dng phn cc thun pha trn
im knee.

Hnh 1-2 Diode phn cc thun (a) c th thay th bi mt ngun p (b)

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V vy, phn tch in p v dng din DC trong mch c cha diode, ta c th

thay th c tuyn V-A nh hnh 1-3.

Hnh 1-3 c tuyn l tng ha

V d 1-1
Gi s rng diode Si trn hnh 1-4 i hi dng ti thiu l 1 mA nm trn im
knee.

Hnh 1-4 (V d 1-1)

1. Tr s R l bao nhiu dng trong mch l 5 mA?
2. Vi tr s R tnh cu (1), gi tr ti thiu ca E l bao nhiu duy tr diode
trn im knee?
Gii
1. Tr s ca R
E 0,7V 5V 0,7V
R=
=
= 860
I
5mA
2. Gi tr ti thiu ca E
E 0,7V
I=
1mA
R
E 860 1mA + 0,7V = 1,56V

Phn tch mch diode vi tn hiu nh

Mt cch tng qut, cc linh kin th xem xt hot ng hai dng: tn hiu nh
v tn hiu ln. Trong cc ng dng tn hiu nh, in p v dng in trn linh
kin mt tm rt gii hn trn c tuyn V-A. Ni cch khc, i lng V v I
rt nh so vi tm in p v dng in m linh kin hot ng.
V d 1-2
Gi s rng diode Si trn hnh 1-5 c phn cc pha trn im knee v c rB l
0,1, hy xc nh dng in v in p trn diode. V th dng in theo thi
gian.

Hnh 1-5 (V d 1-2)

Gii
Ngn mch ngun AC, xc nh dng DC:
(6 0,7)V
I=
= 19,63mA
270
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Do , in tr AC l
rD =

25mV
25mV
+ rB =
+ 0,1 = 1,42
I
19,63mA

i=

e
2 sin t
=
= 7,37 sin t[mA]
R + rD 270 + 1,42

Dng in AC l

in p AC l
rD
1,42
e=
2 sin t = 0,01sin t[V ]
R + rD
270 + 1,42
Nh vy dng v p tng cng l
i (t ) = 19,63 + 7,37 sin t[mA]
v (t ) = 0,7 + 0,01sin t[V ]
th dng in theo thi gian c cho hnh 3-8
vD =

Hnh 1-6 Thnh phn AC thay i 7,37 mA xung quanh thnh phn DC 19,63mA

ng ti (load line)
Ta c th thc hin vic phn tch diode vi tn hiu nh bng cch s dng hnh
v vi c tuyn V-A ca diode.
Xt mch cho hnh 1-7. y chnh l mch tng ng v DC ca mch cho
hnh 1-5 (ngn mch ngun p). Ta xem in p trn diode l V (ch khng l
hng s).

Hnh 1-7 Dng in qua diode I v ip p trn diode V

Theo nh lut p Kirchhoff, ta c
E = IR + V
Do , quan h gia dng v p DC trn diode cho bi phng trnh
V E
I=
+
R
R
Thay s vo, ta c
V
6
I=
+
270 270
I = (3,7 10 3 )V + 0,0222

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Phng trnh ny c dng y=ax+b v th ca n l mt ng thng c dc

(slope) l -1/R v ct trc I ti im E/R (v ct trc V ti im Vo=E). ng
thng ny c gi l ng ti DC (DC Load Line).
ng ti DC ca mch cho hnh 1-7 c v trn hnh 1-8. ng ti ny biu
din tt c cc t hp c th c ca dng in qua diode I v ip p trn diode V
vi tr s E v R xc nh. Gi tr hin thi ca I v V ty thuc vo diode c s
dng trong mch.

Hnh 1-8 ng ti DC
c tnh ca ng ti DC l mi t hp c th c ca dng in I v in p V
ca mch hnh 1-7 l mt im nm ti mt ni no trn ng thng. Cho
trc mt diode c th (m ta bit c tuyn V-A ca n), mc tiu ca ta l
xc nh t hp dng-p hin thi. Ta c th tm c im ny bng cch v
ng ti DC trn cng h trc ta ca c tuyn Vn-Ampe, giao im ca
ng ti DC v c tuyn V-A s cho ta gi tr dng v p qua diode hin thi.
Phng trnh ca hai ng ny l
V E
I=
+ (ng ti DC)
R
R
V / VT
I = I S (e
1) (c tuyn V-A ca diode)
Giao im ca chng c gi l im tnh Q (Quiescent point) hay cn gi l
im hot ng ca diode. N i din cho dng v p DC trong mch khi ch c
ngun p DC E=6V, hay ni cch khc l khi ngun p AC trong mch 1-5 bng 0.

Hnh 1-9 Giao im ca ng ti vi c tuyn ca diode (im Q) xc nh

in p trn diode (0,66 V) v dng in qua diode (19,8 mA)
Lu rng cc phn tch ta va lm l da vo iu kin ngun AC c ngn
mch. im tnh Q cn c gi l im phn cc (bias point) bi v n i din
cho dng v p trn diode khi n c phn cc bi ngun DC.
Khi xt n c ngun AC trong mch hnh 1-5, th in p tng cng l
v(t ) = E + e = E + 2 sin t

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Nh vy, in p s thay i theo thi gian vi tr ti thiu l E 2 [V] v ti a l

E + 2 [V]. in p ny s to ra mt lot cc ng ti (c minh ha trn hnh
1-10).

Hnh 1-10 Tc ng ca ngun AC ln mch diode c th phn tch theo cch n

to ra mt lot cc ng ti song song. Vi cch ny, ta c th gi tr ti a v
ti thiu ca p v dng.

Phn tch mch diode vi tn hiu ln

Trong mi ng dng thc t vi tn hiu ln, ta c th xem diode hot ng hai
vng: vng phn cc thun v vng phn cc ngc (hoc phn cc gn 0V). Khi
in tr ca diode thay i t rt nh n rt ln, th diode hot rt ging vi mt
cng tc (switch). Mt diode l tng trong cc ng dng tn hiu ln c xem l
mt cng tc c in tr bng khng khi ng v bng v cng khi h. Nh vy,
khi phn tch cc mch nh vy, ta c th xem diode l mt cng tc c iu
khin bng in p, khi phn cc thun th ng, khi phn cc ngc hoc phn
cc vi p gn bng 0 th h mch. Ty theo ln ca in p trong mch m
in p ri trn diode (0,3 V n 0,7 V) c th b qua hay khng.
V d 1-3
Gi s diode Si trong mch hnh 1-11 l l tng v c V = 0,7 V. Hy xc nh
dng in i(t) v in p v(t) trn in tr nu
1. e(t) = 20sint
2. e(t) = 1,5sint

Gii

Hnh 1-11 (V d 1-3)

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Hnh 1-12 Dng v p trn in tr khi e(t) = 20sint

Hnh 1-13 Dng v p trn in tr khi e(t) = 1,5sint

Bi tp
1-1 S dng c tuyn V-A hnh 1-14, hy xc nh (bng hnh v) gi tr in
tr AC gn ng khi dng qua diode l 0,1 mA. Lm li vi in p trn diode l
0,64 V. Diode ny l silicon hay germanium?

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Hnh 1-14 (Bi tp 1-1)

S 320 ; 16 ; silicon.
1-2 Xc nh in tr DC ca diode ti cc im c ch ra bi tp 1-1.
S 5,4 k; 183
1-3 Xc nh (bng cng thc) in tr AC gn ng ca diode ti cc im c
ch ra bi tp 1-1 (b qua in tr bulk).
S 260 ; 7,43
1-4 Mt diode c dng in 440 nA chy t cathode sang anode khi phn cc
ngc vi in p l 8V. Tm in tr DC ca diode?
S 18,18 M
1-5 Cho mch hnh 1-15. Khi chnh in tr c gi tr 230 th o c in p
l 0,68 V. Khi chnh in tr c gi tr 150 th o c in p l 0,69 V. Trong
c hai trng hp, ngun p DC c nh l 10 V.
a. Hi in tr DC ca diode l bao nhiu mi ln o?
b. Hi in tr AC ca diode l bao nhiu khi thay i in p trn diode t
0,68 V ln 0,69 V?

Hnh 1-15 (Bi tp 1-5)

S (a) 36,20 ; 24,01 (b) 1,005
1-6 Cho mch hnh 1-16. Xc nh in p ri trn diode v in tr DC? Bit
rng in tr R = 220 v I = 51,63 mA

Hnh 1-16 (Bi tp 1-6)

S 0,6414 V; 12,42
1-7 Cho mch nh hnh 1-17. Cho in p ri trn diode Si phn cc thun l 0,7 V
v in p ri trn diode Ge phn cc thun l 0,3 V. Gi tr ngun p l 9V.
a. Nu diode D1 v D2 l diode Si. Tm dng I?
b. Lm li cu (a) nu D1 l Si v D2 l Ge.

Hnh 1-17 (Bi tp 1-7)

S (a) 7,6 mA; (b) 8 mA
1-8 Cho mch nh hnh 1-18. Cho diode loi germanium (in p ri phn cc
thun l 0,3 V). Hy xc nh sai s phn trm do vic b qua in p ri trn diode
khi tnh dng I trong mch. Bit rng p l 3V v in tr l 470 .

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