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Silicon NPN Triple Diffused Planar Transistor: (Complement To Type 2SA1667/1668)
Silicon NPN Triple Diffused Planar Transistor: (Complement To Type 2SA1667/1668)
Unit
Symbol
Conditions
2SC4381 2SC4382
Unit
10max
ICBO
VCB=
VEBO
IEBO
IC
V(BR)CEO
150
200
VEB=6V
10max
IC=25mA
150min
200min
IB
hFE
VCE=10V, IC=0.7A
60min
PC
25(Tc=25C)
VCE(sat)
IC=0.7A, IB=0.07A
1.0max
Tj
150
fT
VCE=12V, IE=0.2A
15typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
35typ
pF
Tstg
1.350.15
1.350.15
100
50
1.6
1.2
I B =5mA/Step
0.8
0.4
3.0typ
1.0typ
I C = 0 .5
10
10
100
1000
(V C E =10V)
50
0.1
125 C
2 5 C
3 0 C
100
50
30
0.01
0.1
0.5
10
100
(V C E =12V)
30
In
fin
ite
he
at
si
nk
Without Heatsink
Natural Cooling
1.2SC4381
2.2SC4382
20
ith
0.1
1m
ms
5m
10
20
Typ
P c T a Derating
20
1000
Time t(ms)
f T I E Characteristics (Typical)
1.0
j-a t Characteristics
100
0.5
Base-Emittor Voltage V B E (V)
Typ
30
2A
1A
400
30
0.01
(V C E =10V)
400
DC Cur rent Gain h F E
(V C E =10V)
1.5typ
h FE I C Characteristics (Typical)
B C E
I C V CE Characteristics (Typical)
100
tf
(s)
tstg
(s)
ton
(s)
Temp
10
IB2
(mA)
(Case
IB1
(mA)
VBB2
(V)
125C
20
20
VBB1
(V)
IC
(A)
2.40.2
2.20.2
j - a ( C/W)
RL
()
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
3.30.2
a
b
0.80.2
3.9
200
e Temp)
150
25C (Cas
VCEO
4.20.2
2.8 c0.5
8.40.2
16.90.3
200
13.0min
150
4.00.2
10.10.2
VCBO
e Temp)
2SC4381 2SC4382
(Ta=25C)
0.2
Symbol
Electrical Characteristics
(Ta=25C)
55C (Cas
10
Without Heatsink
0
0.01
1 2
0.01
0.1
0.5
10
100
300
50
100
150
101
Free Datasheet http://www.datasheet4u.com/