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Class B and Class AB Power Amplifier
Class B and Class AB Power Amplifier
Lecture 9
Power Amplifiers
-Class B
Class-B Amplifier :-
Av
v in
v out
+0.7V
Transistor
conducts
v out
v in
Transistor off
Class-B amplifier provides an output signal varying over one-half the input
signal cycle + zero phase shift.
I CQ = 0
and
Obviously, the output is not a faithful reproduction of the input if only one
half-cycle is present.
Therefore, a two-transistor configuration, is necessary to get a sufficiently
good reproduction of the input waveform.
This amplifier configuration is known as push-pull emitter follower (pushpull amplifier) or complementary-symmetry amplifier.
Q1
Q 1 = on
RL
v in
Q2
Q 2 = on
-V CC
The term push-pull comes from the fact that two transistors in a class-B
amplifier conduct on alternating half-cycles of the input.
The combined half-cycles then provide an output for a full 3600 of operation.
No Input :When the transistor is in its quiescent state (no input), both transistors are
biased at cutoff.
Positive Input :During the positive half-cycle of the input signal, Q1 is biased above cutoff,
and conduction results through the transistor RL .
During this time, Q2 is still biased at cutoff.
provide output on the positive-output half-cycle.
Negative Input :During the negative half-cycle of the input signal, Q1 is returned to the
cutoff state, and Q2 is biased above cutoff.
As a result, conduction of Q2 start to built while Q1 remains off.
provide output on the negative-output half-cycle.
The combined half-cycles then provide an output for a full 3600 of operation.
?? WHY ??
Crossover Distortion :Among the disadvantages of a class-B amplifier is that the nonlinear cutoff region is included in the operation range.
Class-AB Amplifier
Class-AB Amplifier :To eliminate crossover distortion, both transistors in the push-pull
arrangement must be biased slightly above cut-off when there is no signal.
This can be done with, for example, a voltage-divider arrangement.
This variation of the class B push-pull amplifier is designated as class-AB.
R1
Q1
R2
R3
Q 1 = on
RL
Q2
v in
Q 2 = on
R4
However, difficult to maintain a stable bias point with this circuit due to
changes in VBE over temperature changes. (i.e. temp Q-point )
A more stable arrangement
(2) Diode Biasing Circuit :+V CC
R1
Q1
D1
RL
D2
Q2
R2
R1
VCC
2
Q1
D1
D2
Q2
VCC
VCC
R2
DC equivalent circuit.
Assume :- (i) R1 = R2 ,
(ii) transconductance characteristic of the diodes and the
transistors are identical.
I CQ = 0
10
oad
ac l
ic
lin e
V CEQ =
Q2
R1
Q1
V CC
2
RL
R2
vce
V CE
Q 2 = on
Q 1 = on
0V
AC equivalent circuit.
V CEQ
V CC
AC load line.
Under maximum conditions :both transistors Q1 and Q2 are alternately driven from near cutoff to near
saturation
Q1
and :-
VCC
VCC
2
Q2 0
VCC
2
v ce ( peak ) VCEQ
VCEQ
I C ( sat ) =
VCC
2
v ce ( peak ) VCEQ VCC
=
=
RL
RL
2 RL
11
In ac operation +VCC
vo
R1
vL
VCC
2
Q1
D1
CC
D2
Q1 = on
RL
Q2
v in
Q2 = on
R2
vin = +ve
When input vin is positive and Q1 is conducting, current is drawn from the
power supply and flows through Q1 to the load.
vin = -ve
When Q1 is cut-off by a negative input, no current can flow from the supply.
At those times, Q2 is conducting and capacitor CC discharges through that
transistor.
Thus, current flows from the load, through CC, and through Q2 to ground
whenever the input is negative.
The RLCC time constant must be much great than the period of the lowest
signal frequency.
f =
1
2RLCC
12
Power Calculations :(1) DC Input Power :The total (dc) input power comes from the VCC source :-
Pi ( dc ) = VCC I CC
I CC = I C ( ave ) + I 1
I CC I C ( ave )
( I C ( ave ) >> I 1 )
Pi ( dc ) = VCC I C ( ave )
The total current drawn from the supply is the sum of the average Q1
collector current and the current through the amplifier base circuit. The
average value of the current through the collector of Q1 is given as -
Ic
Ic(sat)
Ic(ave)
t
T/2
I C ( ave )
I C ( sat )
1 T
= 0 I C dt =
T
I C ( sat )
Pi (dc) = VCC
Pi ( dc ) =
VCC I C ( sat )
13
o ad
ac l
ic
line
VCEQ =
Q2
R1
Q1
VCC
2
RL
R2
vce
VCE
Q2 = on
Q1 = on
0V
VCEQ
VCC
The class-B amplifier has the same (ac) output power characteristics as the
class-A amplifier :vo2( rms )
Po ( ac ) = ic ( rms ) vo ( rms ) =
RL
The maximum load power is:
Po ( ac) max =
Po ( ac )
Pi ( dc )
I C ( sat ) VCEQ
2
Po ( ac) max
I C ( sat ) VCC
=
2 2 2
Po ( ac ) max =
I C ( sat )VCC
4
I C ( sat )VCC
4
100% =
100% = 100% = 79%
VCC I C ( sat )
4
max 79%
14
Power Amplifiers
-Class C
15
Class-C Amplifier :-
Av
V in
V out
Basic Operation :-
The transistor is biased with a negative VBE . Thus it will conduct only when
the input signal is above a specified positive value.
i.e. transistor ON when Vin > VBB + VBE
16
For example :-
17
Because the collector voltage (output) is not a replica of the inputs, the
resistively loaded class-C amplifier is of no value in linear applications.
It is therefore necessary to use a class-C amplifier with a parallel resonant
circuit, as shown in Figure (a).
The resonant frequency of the tuned circuit is determined by the formula :-
f =
1
2 LC
The tuned circuit in the output will provide a full cycle of output signal for
the fundamental or resonant frequency of the tuned circuit of the output.
This type of operation is therefore limited to use at one fixed frequency, as
occurs in a communications circuit, for example.
Operation of a class-C circuit is not intended primarily for large-signal or
power amplifiers.
18
Power Transistor Heat Sinking :Power transistor can dissipate many watts.
For example :- 2N3055, an inexpensive power transistor of great popularity,
can dissipate as much as 115 watts if properly mounted.
All power devices are packaged in cases that permit contact between a metal
surface and an external heat sink.
In most cases that metal surface of device is electrically connected to one
terminal (e.g. for power transistors the case is always connected to the
collector).
19
The whole point of heat sinking is to keep the transistor junction (or the
junction of some other device) below some maximum specified operating
temperature.
For silicon transistors in metal packages the maximum junction temperature
is usually 2000C, whereas for transistors in plastic packages it is usually
1500C.
20
21
Summary:Power Amplifiers
Amplifier Efficiency
Amplifier Classification
Class-A Amplifier
Basic Operation Principle
DC Operating Characteristics
AC Operating Characteristics
AC Load Line
Amplifier Compliance
Power Calculations
Maximum Efficiency
Class-B Amplifier
Basic Operation Principle
Push-Pull Emitter Follower
Crossover Distortion
Class-AB Amplifier
Voltage-Divider Configuration
Diode Bias Configuration
DC Operating Characteristics
AC Operating Characteristics
Power Calculations
Maximum Efficiency
Class-C Amplifier
Basic Operation Principle
Tuned Class-C Amplifier
Basic Operation Principle
Power Transistor Heat Sinking