Field Effect Transistors (FET)

The field Effect Transistors is a device which is enable us to use one electrical
signal to control another. The name transistor is the shortest version of
transfer resistor, which shows how devices works.
The Field Effect Transistors consist semiconductor channel with electrode
which is either end referred to drain or the Source. It is based around the
concept that charge on a nearby object can attract charges with a
semiconductor channel.
A control electrode is placed in very close proximity to the channel so that its
electro charge is able to affect the channel.
The control electrode is
called gate. The gate of FET controls the
flow of electrons or
holes flowing from source to drain. It
does with controlling the
size and shape of the conductive
channel.
The electric field control the current is applied to a third electrode is known
as gate.

FET Circuit:
Field Effect Transistors are widely used in all form of circuits from those use
in circuit to discrete components. Those employed in integrated circuits.

Types of Field Effect Transistors.

There are many ways to define types of field effect transistors that are
available. This may be categorizing in that tree.

There are many different types of FET are available in the market but some
of the major categories are delayed.

Junction FET: this form of FET uses a reverse baised diode junction to
provide isolation from the channel. And the one that was first develop.
Isolated Gate FET/Metal Oxide Silicon FET MOSFET: this type of FET
uses an insulated later between the gate and the channel. Typically this is
formed from a layer of oxide of semiconductor. The most common type of
IGFET. The MOSFET-Metal Oxide Silicon FET.
Dual Gate MOSFET: It is a specialize form of MOSFET that has two gates in
series along the channel. This enables some performance improvement to be
made.

MESFET: the metal silicon FET is normally fabricant using gallium Arsenide
and is offend referred to as a gaAs FET. Its a very high performance but in
view of gate structure. It is very sensitive to ESD.
HEMT: High Electron Mobility Transistor are development of basic FET
concept. But developed to enable very high frequency operation.
FinFET: FinFET technology is now being used in integrated circuits to enable
higher level of integration to be achieved by allowing smaller feature size.
VMOS: Vertical MOS it is a type of FET that uses a vertical flow to improve
the switching and current carrying performance.