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Experimental Physics (230515) SIMS UOL
Experimental Physics (230515) SIMS UOL
Experimental Physics (230515) SIMS UOL
k eV
Physical Sputtering
Chemical Sputtering
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Dynamic SIMS
used to study impurities in semiconductor industry
high detection limit ppb to ppm
not a pure surface analysis technique as it sputters the
material away
Static SIMS
pulsed primary beam of low current (pA) i.e.
Ion-induced damage is very low
Elemental/molecular Mapping
Liquid metal ion sources focusing the primary ion beam
to 100 nm diameter to achieve high spatial resolution
Depth profiling
A second sputtering ion beam is used as the current of the
primary ion beam is very low i.e. Dual-beam depth profiling
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Strengths
high isotope sensitivity
elemental information with high spatial resolution
widely used technique for elemental mapping
Limitations
damages the sample(partly avoided by lower sputter
ion current)
lacks quantitative and chemical state information
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