Lab 10: IV Characteristics of

MOSFETs
CE 3110.104
Josh Hautt
Lab Partner: Jonah Willis
Lab Performed: 12/3/15
Lab Due: 12/10/15

Abstract
The following report will contain analysis of various elements of a MOSFET.
Analysis will include: IDS-VDS characteristics, channel conductance
dependence on the gate-source voltage, channel resistance dependence on
the gate-source voltage, transconductance dependence on the gate source
voltage, and the sqrt(IDS)-VGS characteristic. All the values used were found
using 2 Keithley SMUs, a MOSFET, a resistor, and LabVIEW.

Analysis
1. IDS-VDS Characteristic

IDS vs. VDS

3.50E-04
3.00E-04
2.50E-04
Vgs= 1.500000
Vgs= 1.700000

2.00E-04
IDS (A)

Vgs= 1.900000
Vgs= 2.100000

1.50E-04

Vgs= 2.300000
Vgs= 2.500000

1.00E-04

Locus

5.00E-05
0.00E+00
0

-5.00E-05
VDS (V)

10

12

2. gDS dependence on VGS

1.

gDS vs. VDS

2.50E-02

2.00E-02

1.50E-02

gDS (mS)

1.00E-02

5.00E-03

0.00E+00
0

-5.00E-03
VDS (V)

3. VT = 2V
(nZC/L) = slope of graph = (.021397 - .000119)/(10-2) = .00266 A/V
(nZC/2L) = .00266/2 = .00133

3. rd dependence on VGS

10

12

1.

rd vs VDS
350000
300000
vgs = 2.5

250000

vgs = 3.0

200000
rd

vgs = 3.5
vgs = 4.0

150000

vgs = 4.5

100000

vgs = 5.0

50000
0
0

10

12

VDS

2. VGS = 2.5 V
rd(7) =

VDS ( i+1 )VDS (i1)

IDS ( i+1 )IDS(i1)

8 V 6 V
.000289 A.000282 A

285714 .
From graph, rd(7V) = 269245
% error = (285714 269245)/ (269245) = 6.11%

2V
.000007 A

4. gm dependence on VGS
1.

gm vs VGS
7.00E-03
6.00E-03
5.00E-03
4.00E-03
gm (mS)

Vds = 1.0
Vds = 3.0

3.00E-03

Vds = 5.0

2.00E-03
1.00E-03
0.00E+00
0

-1.00E-03
VGS (V)

3. a. VT = 2V
Vds = 5.0V
VGS = 2.5V

b.

V GSV T
( n ) ( Ci ) ( Z ) )
(
)
gm sat . =(
)
L

( n ) ( C i ) ( Z )
A
.000957( )=(
)(2.52.0)
V
L

10

12

( n ) ( C i ) ( Z )
2L

4. gm(5V) =

) = .000957

I DS ( i+1 ) I DS(i1)
V DS ( i+1 ) V DS(i1)

.000282.000273
64

.000009
2

=.

0000045.
Graph shows gm VDS=5V, VGS = 2.5V= .00000957.
(00000957-.0000045)/(.0000045) = 112%. A little high?!?!

5. IDS(1/2) VGS characteristic

1.

IDS(1/2) vs VDS

Vgs= 0.500000
Vgs= 0.250000

3.50E-02

Vgs= 0.000000
3.00E-02

Vgs= -0.250000
Vgs= -0.500000

2.50E-02

Vgs= -0.750000
Vgs= -1.000000

2.00E-02
IDS^(1/2)

Vgs= -1.250000
Vgs= -1.500000

1.50E-02

Vgs= -1.750000
Vgs= -2.000000

1.00E-02

Vgs= -2.250000
Vgs= -2.500000

5.00E-03

Vgs= -2.750000
0.00E+00

Vgs= -3.000000
0

-5.00E-03

10

12

Vgs= -3.250000
Vgs= -3.500000

VDS (V)

3. VT = 2.4V

( n ) ( C i ) ( Z )
2L

) = slope

VDS = 5V, VGS = 2.5V

( n ) ( C i ) ( Z )
2L

) = (.011861 - .003403)/ (6-4) = .004229

Conclusion
1. VT was essentially the same for all characteristics. All VTs were 2V
except for the IDS(1/2) vs. VDS, which was 2.4V.
2. The normal IV characteristic is the best to use to find these values.
Normally, I would think the IV(1/2) would be more accurate because the
square root gives a linear relationship, which values more accurate.
However, VT was 2.4V with this method, where it should have been
more around 2V.