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)( ) )
)( )( ) ( ) ) )( ) ) ))


.
. )(
) (1827 - 1745
.
))
.
.

. .

. )(
)1775 (18836
.


.
.
) ( ) )
. (1889 - 1785 .

)( ) ( )(
). (1819 - 1736

-:
-1 Diode

-2 Transistor
-3
-4
-5
-6 )(
-7

.. p-type n-type
..
.. Diode
semiconductor
.. p-type n-type


.. forward biased ..
..
.. . reverse biased

 0.6
.. Si 0,3 ..

..
..
1 0 .

 ..
..
.. ) (AC
) (DC ..

..
..
rectification
..
.. " " Block
..


" Bridge "
..

..

-:
Transistor
.
Amplifier ) Switch
(.
:
Bipolar Junction Transistor -1
BJT holes
.
) 273-(
Holes

Current
Controlled .
Unipolar Junction Transistor -2
FET Field Effect Transistor
) gate (
)( .
: Bipolar Junction Transistor :
:
-1 Base
-2 Collector

 -3 Emitter
P
) n ( ) (NPN
n p
* " "-- " "oo ).(1

)(2
) (3 BJT
NPN
.
PNP n
p ) (1 ) (2
)(3

) (

.
BJT :

 Base Emtter NPN

) ( .

)
( barrier voltage 0.7
.
:

.
:

)
barrier (
:

 Collector base
) (
: Ib IE
Ic
)
(

IE=Ib+Ic

Ic=B*Ib
B )( hfe
300-100

Common-Emitter .
VBB>VBE .
. RB

 Ic=B*Ib

Vcc VBB
:

.
.

BJT :
1

) ( VC
IB
IC
IE

 RB
RL
VS
VC
VL
:

Vc 2.5.
2

.Vs
RL
)( .
) ( .Vs

:
1

1
T1 R1 T1 ON
Ic1 = .

T2 OFF V+
2


) NPN ( .
PNP NPN
) (.

: )(
)( :
)(bipolar , unipolar
.
) :
)(NPN , PNP
" " "
-" .
.
:
)(Collector
)(Emitter
)(Base

)(
)( ) (h21e .
.
:
NPN ) 100( ) 1,5(
- )
( ) 10( )
( .

. - )
- ( .
NPN .
( NPN .
)

 PNP .

)
( . ) ( .
" "
:
:
)BCX 40 BC 140 (BC141
) (
: :
.
.
0,5 ) (


. 0,5 50
.

:
:
:
- ) (bipolar
.
) (unipolar
FET .
.

.
- ) (TTL
" " ) (DIGITAL
.
-
. .
_ .


.
:
Transistors .. FET
:
structure & operation
.
.
. DC/AC Load Line
. Biasing Circuits
: .

FET .

3 ) ,B (base ),C (collecteur
).E (metteur
BC 547 3

:
C&E .(fig. 1) .
,C et E .(fig. 2).
IB B et E IC = . IB
100

45 6 12 3 :






MOSFET
Metal Oxide Semiconductor Field Effect Transistor

:
) (
.
4 .
.
) (.
: N
5
N )( .
: P
3
P
) .(Holes

 :
P N
N P )
( ) ( Depletion Area

. Barrier Voltage
.

:
P
N
.

 )( :
N
P

.

:
MOSFET

<< :
-1 Substrate ) N ( ) P (
-2 ) ( N <==> P
) Drain .(Source
-3 ) (SIO2 )(.
-4 Gate
<< P-Cahnnel N-Channel
) (.
<< ) MOS - -(
.

: MOSFET
) ( ..
) (
-1 Gate ) (
-2 ) ( - - N

.
.

 -3 ) ( - -P

.
.

)( .
) ( .
MOSFET ): (CMOS
CMOS Complementary Metal Oxide Semiconductor Field
Effect Transistor
N-Channel ,P-Channel
:
-1 ) (LOW ) P-MOS FET
(P . .
-2 ) (High ) N-MOS FET

 (N . .
CMOS N-MOS PMOS ) (.
) (

.

:
MOSFET BJT

.
-:
n
STR
...

 MosFet

-:

. :

.
.

.

 ).(OHM

.
.

:
: :

 100000 : % 10 90000 110000

.

..
..
.. ..
..
..
.. ..
.. .. ..
Ohm capital omega
..
..

..

..
..


)( )(
Ohm . R



.
1

Ohm 1

K1

Ohms = 1 K Ohm 1000

Ohms = 1 M Ohm 1000000

M1

:
-1 .
-2 .
-3 .
-4 .

 : : (Resistor) R


.

Aluminum Housed

)(
)Jumper (Zero Ohm

Carbon Comp

Low Ohm

Ceramic Encased

Network

Film

Power Film


Fusible

Surface Mount

High Voltage

Temp. Sensitive

High Ohm

Wire wound

Fig. 1.1a: Some low-power resistors

Fig. 1.1b: High-power resistors and rheostats

: ): (Potentiometer or Variable Resistor VR

.
:
10K

) 10K (0-10K
.


""


.

:

:
.

"
"
" .

" .
: :

1

3
3 3 10000ohms
10Kohm

 %1 . %2
%5 .
:
. Tolerance
" "
%5
%10 %20 .
:
%5 :
ohm 950 .ohm 1050
%10 :

 ohm 900 .ohm 1100

%20 :
ohm 800 .ohm 1200

:
.1 ) ( :
) ( )( .
.2 :
.
.3 :

.
.4 :
)( )( )( .
.5

): (LDR

..
)(CDS

..
).. (2M ohm
).. (ohm 100

.6): (Thermistor

..
..

:
) (C0 )
..(12K ohm
) (25C

..(5K ohm
) (100C )400
..(ohm

.7 ) : (PTC .
.8 ) : (NTC .

.9 ) (VDR :


..

VDR
..


..
:

..

.9 ) (VDR :

..

 VDR ..

..
:

..

..

 ) ( ..

): (Photoresistor
)
(Cadmium Sul CdS
2

.

 .
): (Phototransistor

))Solar Cell

.
.

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