2SC4468

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)

10max

IEBO

VEB=6V

10max

V(BR)CEO

10

hFE

140min

IC=50mA

50min

VCE=4V, IC=3A

VCE(sat)

IC=5A, IB=0.5A

0.5max

100(Tc=25C)

fT

VCE=12V, IE=0.5A

20typ

MHz

Tj

150

COB

VCB=10V, f=1MHz

250typ

pF

55 to +150

20.0min

PC

hFE Rank

3.20.1

IB

Tstg

2
3

O(50 to100), P(70 to140), Y(90 to180)

1.05 +0.2
-0.1

Typical Switching Characteristics (Common Emitter)

5.450.1

VCC
(V)

RL
()

IC
(A)

VBB1
(V)

VBB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

60

12

10

0.5

0.5

0.24typ

4.32typ

0.40typ

4
20mA

I B =10mA
0

2
I C =10A

0.5

1.0

1.5

h FE I C Temperature Characteristics (Typical)

(V C E =4V)

200

Typ
100

50

125C
25C

100

30C

50

20
0.02

10

Transient Thermal Resistance

DC Curr ent Gain h FE

300

0.5

0.1

Collector Current I C (A)

0.5

10

j-a t Characteristics
3

1
0.5

0.1

10

100

1000 2000

Time t(ms)

Collector Current I C (A)

f T I E Characteristics (Typical)

Base-Emittor Voltage V B E (V)

(V C E =4V)

Safe Operating Area (Single Pulse)

P c T a Derating

(V C E =12V)
100

30
3m

10

100

Collector-Emitter Voltage V C E (V)

200

Collector Curre nt I C ( A)

nk

50

si

10

50

at

he

0.1
3

ite

Without Heatsink
Natural Cooling

fin

Emitter Current I E (A)

10

0.5

In

ith

0.1

0
0.02

ms

10

10

20

DC

0m

Typ

10

30

M aximum Power Dissipa ti on P C (W)

40

Cut- off F req uency f T (M H Z )

DC Cur rent Gain h FE

2.0

Base Current I B (A)

h FE I C Characteristics (Typical)

0.1

5A

Collector-Emitter Voltage V C E (V)

20
0.02

(Case

50 mA

25C

75 m A

mp)

e Te

100m

(V C E =4V)

10

Cas

Collector Current I C (A)

mA

C (

150

125

Collector Current I C (A)

m
00

1.4

I C V BE Temperature Characteristics (Typical)

j - a (C /W)

30

A
0m

Weight : Approx 6.0g

a. Part No.
b. Lot No.

V CE ( sat ) I B Characteristics (Typical)

Collector-Emitter Saturation Voltage V C E (s at) (V )

40

0m

10

0.65 +0.2
-0.1

5.450.1
B

I C V CE Characteristics (Typical)

2.00.1

Temp)

IC

VEBO

4.80.2

(Case

140

Temp

VCEO

15.60.4
9.6

30C

1.8

VCB=200V

200

5.00.2

ICBO

VCBO

2.0

Unit

Symbol

External Dimensions MT-100(TO3P)

(Ta=25C)
Ratings

Unit

4.0

Electrical Characteristics
Conditions

Ratings

19.90.3

Symbol

4.0max

Absolute maximum ratings (Ta=25C)

Application : Audio and General Purpose

3.5
0

Without Heatsink
0

25

50

75

100

125

150

Ambient Temperature Ta(C)

109