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Transistor KTC200Y
Transistor KTC200Y
KTC200
TECHNICAL DATA
FEATURES
A
N
E
UNIT
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
45
Emitter-Base Voltage
VEBO
Collector Current
IC
500
mA
Emitter Current
IE
-500
mA
PC
625
mW
Junction Temperature
Tj
150
Tstg
-55150
SYMBOL
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00
CHARACTERISTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
ICBO
VCB=50V, IE=0
0.1
IEBO
VEB=5V, IC=0
0.1
hFE(1) (Note)
VCE=2V, IC=50mA
70
240
hFE(2)
VCE=2V, IC=200mA
25
VCE(sat)
IC=100mA, IB=10mA
0.25
Base-Emittter Voltage
VBE
VCE=2V, IC=200mA
1.0
Transition Frequency
fT
VCE=6V, IC=20mA
300
MHz
7.0
pF
DC Current Gain
Collector-Emitter Saturation Voltage
Cob
1995. 1. 23
O:70140,
Y:120240
Revision No : 0
1/2
KTC200
h FE - I C
I C - VCE
500
COMMON EMITTER
Ta=25 C
400
A
.0m
300
DC CURRENT GAIN h FE
500
3.0mA
mA
4.0
2.0mA
200
1.0mA
0.5mA
100
0mA
Ta=-25 C
Ta=25 C
50
COMMON EMITTER
50
0.5
3 5
-25
25
Ta=
Ta=
100
VCE =2V
Ta=
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
COMMON EMITTER
50
30
10
5
0.2
0.4
0.6
0.8
1.0
500
1
0.5
0.3
COMMON
EMITTER
I C/I B=10
0.1
Ta=100 C
0.05
Ta=25 C
Ta=-25 C
0.03
0.01
0.5
3 5
10
30
100
500
30 50 100
VCE(sat) - I C
2k
100
10
I B - V BE
500
300
VCE =1V
30
1k
VCE =6V
Ta=100 C
100
I B =0.1mA
0
0
300
Pc - Ta
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
AMIENT TEMPERATURE Ta ( C)
1995. 1. 23
Revision No : 0
2/2