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SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMD Type
NPN Transistors
2SD1816
TO-252
+0.15
6.50-0.15
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
Unit: mm
+0.1
2.30 -0.1
+0.8
0.50 -0.7
3 .8 0
0.60-+ 0.1
0.1
+0.15
5.55 -0.15
+0.25
2.65 -0.1
2.3
0.127
max
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Complementary to 2SB1216
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.15
4 .60 -0.15
1 Base
2 Collector
3 Emitter
Symbol
Rating
VCBO
120
VCEO
100
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature Range
TJ
150
Tstg
-40 to 150
Unit
V
A
W
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
Typ
Max
VCBO
120
VCEO
Ic= 1 mA RBE=
100
VEBO
ICBO
IEBO
VEB= 5V , IC=0
VCE(sat)
IC=2 A, IB=200mA
0.15
0.4
VBE(sat)
IC=2 A, IB=200mA
0.9
1.2
DC current gain
Turn-on Time
hFE(1)
70
hFE(2)
40
tstg
Fall Time
Cob
Transition frequency
fT
400
900
ns
50
tf
uA
100
ton
Storage Time
Unit
40
pF
180
MHz
Classification of hfe(1)
Type
2SD1816-Q
2SD1816-R
2SD1816-S
2SD1816-T
Range
70-140
100-200
140-280
200-400
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Transistors
SMD Type
NPN Transistors
2SD1816
TEST CIRCUIT
PW=20S
Duty Cycle1%
I B1
INPUT
RB
OUTPUT
I B2
50
VR
+
100
-5V
+
470
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Typical Characterisitics
50V
Collector to Emitter
Saturation Voltage, VCE(SAT) (mV)
Base to Emitter
Saturation Voltage, VBE(SAT) (V)
25
e
Op
n
tio
ra
25
DC
DC
(T Op
a=
25 erat
ion
)
c=
(T
SMD Type
Transistors
NPN Transistors
2SD1816
Typical Characterisitics
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