TLP5211,TLP5212,TLP5214

TOSHIBA Photocoupler GaAs Ired & PhotoTransistor

TLP521
1,TLP521
2,TLP521
4
Programmable Controllers
AC/DCInput Module
Solid State Relay

Unit in mm

The TOSHIBA TLP5211, 2 and 4 consist of a phototransistor

optically coupled to a gallium arsenide infrared emitting diode.
The TLP5212 offers two isolated channels in an eight lead plastic DIP
package, while the TLP5214 provides four isolated channels in a
sixteen plastic DIP package.

Collectoremitter voltage: 55 V (min)

Current transfer ratio: 50% (min)

TOSHIBA

115B2

Weight: 0.26 g

Rank GB: 100% (min)

Isolation voltage: 2500 Vrms (min)

UL recognized
made in Japan: UL1577, file No. E67349
made in Thailand: UL1577, file No. E152349

Pin Configurations (top view)

TLP521-2

TLP521-1

TLP521-4

16

15

14

13

12

11

10

TOSHIBA

1110C4

Weight: 0.54 g
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector

1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector

: Anode
1, 3, 5, 7
: Cathode
2, 4, 6, 8
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector

TOSHIBA

1120A3

Weight: 1.1 g

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TLP5211,TLP5212,TLP5214
Maximum Ratings (Ta = 25C)
Rating
Characteristic
Forward current

Detector

LED

Forward current derating

Symbol

TLP521-1

TLP521-2
TLP521-4

Unit

IF

70

50

mA

IF /C

-0.93 (Ta 50C)

-0.5 (Ta 25C)

mA /C

Pulse forward current

IFP

1 (100 pulse, 100pps)

Reverse voltage

VR

Junction temperature

Tj

125

Collector-emitter voltage

VCEO

55

Emitter-collector valtage

VECO

Collector current

IC

50

mA

Collector power dissipation

(1 circuit)

PC

150

100

mW

PC /C

-1.5

-1.0

mW /C

Collector power dissipation

derating (1 circuit Ta 25C)
Junction temperature

Tj

125

Storage temperature range

Tstg

-55~125

Operating temperature range

Topr

-55~100

Lead soldering temperature

Tsol

260 (10 s)

Total package power dissipation

PT

250

150

mW

Total package power dissipation

derating (Ta 25C)

PT /C

-2.5

-1.5

mW /C

Isolation voltage

BVS

2500 (AC, 1min., R.H. 60%)

(Note 1)

Vrms

(Note 1): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.

Recommended Operating Conditions

Characteristic

Symbol

Min

Typ.

Max

Unit

Supply voltage

VCC

24

Forward current

IF

16

25

mA

Collector current

IC

10

mA

Topr

-25

85

Operating temperature

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TLP5211,TLP5212,TLP5214

Type

TLP521

TLP521-2
TLP521-4

Classification (*1)

Current Transfer Ratio (%)

(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25C
Min
Max

Marking Of
Classification

50

600

Blank, Y, Y, G, G, B, B, GB

Rank Y

50

150

Y, Y

Rank GR

100

300

G, G

Rank BL

200

600

B, B

Rank GB

100

600

G, G, B, B, GB

50

600

Blank, GR, BL, GB

Rank GB

100

600

GR, BL, GB

*1: Ex. rank GB: TLP521-1 (GB)

(Note): Application type name for certification test, please use standard product type name, i.e.
TLP521-1 (GB): TLP521-1, TLP521-2 (GB): TLP521-2

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TLP5211,TLP5212,TLP5214
Individual Electrical Characteristics (Ta = 25C)

Detector

LED

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

VF

IF = 10 mA

1.0

1.15

1.3

Reverse current

IR

VR = 5 V

10

Capacitance

CT

V = 0, f = 1 MHz

30

pF

Collector-emitter
breakdown voltage

V(BR) CEO

IC = 0.5 mA

55

Emitter-collector
breakdown voltage

V(BR) ECO

IE = 0.1 mA

VCE = 24 V

10

100

nA

VCE = 24 V, Ta = 85C

50

V = 0, f = 1 MHz

10

pF

MIn

Typ.

Max

Unit

50

600

100

600

Collector dark current

ICEO

Capacitance
(collector to emitter)

CCE

Coupled Electrical Characteristics (Ta = 25C)

Characteristic
Current transfer ratio

Saturated CTR

Collector-emitter
saturation voltage

Symbol
IC / IF

IC / IF (sat)

VCE (sat)

Test Condition
IF = 5 mA, VCE = 5 V
Rank GB

IF = 1 mA, VCE = 0.4 V

Rank GB

60

30

IC = 2.4 mA, IF = 8 mA

0.4

IC = 0.2 mA, IF = 1 mA
Rank GB

0.2

0.4

Min

Typ.

Max

Unit

Isolation Characteristics (Ta = 25C)

Characteristic

Symbol

Test Condition

Capacitance
(input to output)

CS

VS = 0, f = 1 MHz

0.8

pF

Isolation resistance

RS

VS = 500 V, R.H. 60%

1011

2500

AC, 1 second, in oil

5000

DC, 1 minute, in oil

5000

AC, 1 minute
Isolation voltage

BVS

Vrms
Vdc

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TLP5211,TLP5212,TLP5214
Switching Characteristics (Ta = 25C)
Characteristic

Symbol

Rise time

Test Condition

Min

Typ.

Max

tr

Fall time

tf

Turn-on time

ton

VCC = 10 V
IC = 2 mA
RL = 100

Turn-off time

toff

Turn-on time

tON

Storage time

ts

15

Turn-off time

tOFF

25

Fig.1 : SWITCHING
IF

TIME

RL = 1.9 k (Fig.1)
VCC = 5 V, IF = 16 mA

Unit

TEST CIRCUIT
IF
RL

VCC

tS

VCE

VCE

4.5V
0.5V

tON

tOFF

VCC

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TLP5211,TLP5212,TLP5214

IF Ta
100

80

80

Allowable forward current

IF (mA)

Allowable forward current

IF (mA)

TLP521-1
100

60

40

20

TLP521-2
TLP521-4

60

40

20

0
-20

20

40

60

0
-20

100

80

Ambient temperature Ta (C)

240

20

120

60

80

100

TLP521-2
TLP521-4

80

100

PC Ta

100

Allowable collector power

dissipation PC (mW)

200

160

120

80

80

60

40

20

40

0
-20

20

40

60

80

0
-20

100

IFP DR

TLP521-1
3000

20

3000

Pulse width 100s

TLP521-2
TLP521-4

Pulse width 100s

Ta = 25C

Allowable pulse forward

current IFP (mA)

1000
500
300

100
50
30

10-3

10-2

60

IFP DR

Ta = 25C

10
3

40

Ambient temperature Ta (C)

Ambient temperature Ta (C)

Allowable pulse forward

current IFP (mA)

40

Ambient temperature Ta (C)

PC Ta

TLP521-1

Allowable collector power

dissipation PC (mW)

IF Ta

10-1

1000
500
300

100
50
30

10
3

100

Duty cycle ratio DR

10-3

10-2

10-1

100

Duty cycle ratio DR

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TLP5211,TLP5212,TLP5214

100

VF/Ta IF

IF VF
Ta=25C

-2.8

Forward voltage temperature

coefficient VF/Ta (mV/C)

50

Forward current IF

(mA)

30

10
5
3

1
0.5

0.1
0.4

0.8

0.6

1.0

Forward voltage

1.4

1.2

VF

10

(A)

10
5
3

10

10

10

10

10
0.8

1.2

1.6

2.0

Pulse forward voltage VFP

-1

-2

-3

-4

2.4

80

40

(V)

IC VCE
50mA

(mA)
Collector current

Collector current

30mA
20mA
15mA
PC(MAX.)

10mA
20

IF=5mA

40mA
30mA

20

20mA

15

10mA

10

5mA

Ta=25C

IC

50mA

IC

(mA)

60

160

120

Ambient temperature Ta ()

Ta=25C

10V
5V

VCE=24V

25

IF (mA)

IC VCE
80

40

30

10

ICEO Ta

30

0.4

Forward current

Collector dark current ICEO

(mA)
IFP

0.3

(V)

500 Repetitive frequency =100Hz

300 Ta = 25C

Pulse forward current

-1.2

-0.4
0.1

1.6

Pulse width 10s

1
0

-1.6

IFP VFP

1000

50

-2.0

-0.8

0.3

100

-2.4

Collector-emitter voltage

VCE

0
0

10

(V)

IF=2mA

0.2

0.4

0.6

0.8

Collector-emitter voltage

1.0

VCE

1.2

1.4

(V)

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TLP5211,TLP5212,TLP5214

IC IF

100

300

Collector current

Current transfer ratio

IC /IF (%)

IC

(mA)

30

10
Sample

IC/IF IF

500

Ta = 25C
VCE=5V
50
VCE=0.4V

5
3
Sample

Sample

100
Sample

30

Ta = 25C
VCE=5V
VCE=0.4V

5
0.3

0.5
0.3

Collector-emitter saturation
voltage VCE(sat) (V)

0.1
0.05
0.03
0.3

10

IF

30

100

(mA)

10

Forward current

IF

30

100

(mA)

IF = 5mA
IC = 1mA

0.16

0.12

0.08

0.04

-20

100
1000
500

10mA

300

1mA

IF = 0.5mA

(s)

100

Switching time

50

tS

30

10

20

100

0.3

-20

80

tOFF

10

0.5

60

Ta = 25C
IF = 16mA
VCC= 5V

5mA

40

RL Switching Time

VCE = 5V

25mA
50
30

20

Ambient temperature Ta ()

IC Ta

IC (mA)

Forward current

VCE(sat) Ta
0.20

Collector current

50

10

0.1

40

60

80

1
1

100

tON

10

30

100

300

Load resistance RL (k)

Ambient temperature Ta ()

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TLP5211,TLP5212,TLP5214

RESTRICTIONS ON PRODUCT USE

000707EBC

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

2002-09-25

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