ZTX450

ZTX451

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt

TYPICAL CHARACTERISTICS

0.3

Switching time

VCE(sat) - (Volts)

IB1=IB2=IC/10
VCE=-10V

td,tr,tf
ns

0.4

IC/IB=10
0.2
ZTX451

0.1

800

120

700

100

60

0.001

0.01

0.1

300

20

200

100

IC - Collector Current (Amps)

0.1

ABSOLUTE MAXIMUM RATINGS.

IC - Collector Current (Amps)

VCE(sat) v IC

Typical Switching Speeds

1.0
IC/IB=10

0.9

VBE(sat) - (Volts)

hFE - Normalised Gain (%)

100

60
40

20

0.8

0.01

0.1

0.6

VBE(sat) v IC
Single Pulse Test at Tamb=25C

10

IC - Collector Current (Amps)

0.6
0.001

0.01

0.1

VBE - (Volts)

0.1

D.C.
1s
100ms
10ms
1.0ms
300s
100s
ZTX450

10

ZTX451

0.01
0.1

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-176

0.1

0.01

0.001

hFE v IC

0.8

ZTX451

UNIT

60

80

Collector-Emitter Voltage

VCEO

45

60

Emitter-Base Voltage

VEBO

Peak Pulse Current

I CM

Continuous Collector Current

IC

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

PARAMETER

SYMBOL

ZTX450

UNIT

CONDITIONS.

Collector-Base
Breakdown Voltage

V(BR)CBO

60

80

IC=100 A

Collector-Emitter
Sustaining Voltage

VCEO(sus)

45

60

IC=10mA*

Emitter-Base
Breakdown Voltage

V(BR)EBO

IE=100 A

Collector Cut-Off
Current

ICBO

0.1

0.1

A
A

VCB=45V
VCB=60V

Emitter Cut-Off
Current

IEBO

0.1

0.1

VEB=4V

Collector-Emitter
Saturation Voltage

VCE(sat)

0.25

0.35

IC=150mA, IB=15mA*

Base-Emitter
Saturation Voltage

VBE(sat)

1.1

1.1

IC=150mA, IB=15mA*

Static Forward
Current Transfer
Ratio

hFE

100
15

Transition
Frequency

fT

150

Output Capacitance

Cobo

MIN.

IC - Collector Current (Amps)

1.0

ZTX450

VCBO

0.4

IC - Collector Current (Amps)

1.2

SYMBOL

Collector-Base Voltage

0.5

10

1.4

PARAMETER

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).

0.7

0.3
0.001

E-Line
TO92 Compatible

400

tf
tr

0.01

80

500
td

40

C
B

600

ts

80

ZTX450

ts
nS

140

ZTX450
ZTX451

100

ZTX451

MAX. MIN.

300

50
10

MAX.

150

150
15
3-175

15

IC=150mA, VCE=10V*
IC=1A, VCE=10V*
MHz

IC=50mA, VCE=10V
f=100MHz

pF

VCB=10V, f=1MHz

ZTX450
ZTX451

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt

TYPICAL CHARACTERISTICS

0.3

Switching time

VCE(sat) - (Volts)

IB1=IB2=IC/10
VCE=-10V

td,tr,tf
ns

0.4

IC/IB=10
0.2
ZTX451

0.1

800

120

700

100

60

0.001

0.01

0.1

300

20

200

100

IC - Collector Current (Amps)

0.1

ABSOLUTE MAXIMUM RATINGS.

IC - Collector Current (Amps)

VCE(sat) v IC

Typical Switching Speeds

1.0
IC/IB=10

0.9

VBE(sat) - (Volts)

hFE - Normalised Gain (%)

100

60
40

20

0.8

0.01

0.1

0.6

VBE(sat) v IC
Single Pulse Test at Tamb=25C

10

IC - Collector Current (Amps)

0.6
0.001

0.01

0.1

VBE - (Volts)

0.1

D.C.
1s
100ms
10ms
1.0ms
300s
100s
ZTX450

10

ZTX451

0.01
0.1

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-176

0.1

0.01

0.001

hFE v IC

0.8

ZTX451

UNIT

60

80

Collector-Emitter Voltage

VCEO

45

60

Emitter-Base Voltage

VEBO

Peak Pulse Current

I CM

Continuous Collector Current

IC

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

PARAMETER

SYMBOL

ZTX450

UNIT

CONDITIONS.

Collector-Base
Breakdown Voltage

V(BR)CBO

60

80

IC=100 A

Collector-Emitter
Sustaining Voltage

VCEO(sus)

45

60

IC=10mA*

Emitter-Base
Breakdown Voltage

V(BR)EBO

IE=100 A

Collector Cut-Off
Current

ICBO

0.1

0.1

A
A

VCB=45V
VCB=60V

Emitter Cut-Off
Current

IEBO

0.1

0.1

VEB=4V

Collector-Emitter
Saturation Voltage

VCE(sat)

0.25

0.35

IC=150mA, IB=15mA*

Base-Emitter
Saturation Voltage

VBE(sat)

1.1

1.1

IC=150mA, IB=15mA*

Static Forward
Current Transfer
Ratio

hFE

100
15

Transition
Frequency

fT

150

Output Capacitance

Cobo

MIN.

IC - Collector Current (Amps)

1.0

ZTX450

VCBO

0.4

IC - Collector Current (Amps)

1.2

SYMBOL

Collector-Base Voltage

0.5

10

1.4

PARAMETER

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).

0.7

0.3
0.001

E-Line
TO92 Compatible

400

tf
tr

0.01

80

500
td

40

C
B

600

ts

80

ZTX450

ts
nS

140

ZTX450
ZTX451

100

ZTX451

MAX. MIN.

300

50
10

MAX.

150

150
15
3-175

15

IC=150mA, VCE=10V*
IC=1A, VCE=10V*
MHz

IC=50mA, VCE=10V
f=100MHz

pF

VCB=10V, f=1MHz