FACULTY OF ELECTRICAL & ELECTRONICS ENGINEERING

ASSIGNMENT TEST 1
QUESTION 1
1.
1.
2.
3.

Give definition of terminologies below (6)

Doping process.
Valence electrons.
Depletion region.

2.

Briefly explain three types of materials in term of energy band gaps.(6)

3.

How we can generate p-type silicon and n-type Germanium semiconductors(4)

4.

State the majority and minority of p-type and n-type semiconductor.(4)

QUESTION 2
a) Briefly explain three model of diode. Include the general circuits and V-I
characteristics in your answer. (6)
b) Calculate the DC value (average value) of each voltage waveform in Figure 1 (a) and
(b). (4)

(b)

(a)
Figure 1

c) Sketch the circuit of a Center Tapped Full-wave Rectifier with specification below:
(4)
i. Input: AC Sinusoidal with V P =20 V , freq = 50kHz.
ii. Transformer ratio: 1 to 1.

CONFIDENTIAL

iii. Load

DEE 1516II/DEE1233

R L and Silicon Diode.

d) The input waveform is fed into the clipper circuit in Figure 2. Determine and sketch
the output waveform v O . (6)
e)

Fo
r

Figure 2
the circuit given in Figure 3, calculate the current flow, I and the output voltage,
V O . (4)

Figure 3
f) A periodic input waveform is fed into the clamper circuit in Figure 4. Sketch the

vo .

Figure 4
g) A periodic input waveform in Figure 5 is fed into the clamper circuit in Figure 7.

i) Sketch the output waveform, VO.

ii) Calculate the output peak-to-peak voltage.

CONFIDENTIAL

DEE 1516II/DEE1233

Figure 5

END OF QUESTION PAPER