PD1503YVS

Dual N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS

RDS(ON)

ID

Q2

30V

15.8m @VGS = 10V

9A

Q1

30V

21.0m @VGS = 10V

8A

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

Q2

Q1

UNITS

Drain-Source Voltage

VDS

30

30

Gate-Source Voltage

VGS

20

20

IDM

35

30

IAS

29

21

EAS

43

23

Continuous Drain Current2

Pulsed Drain Current
Avalanche Current

TA = 25 C
TA = 70 C

1,2

Avalanche Energy

L = 0.1mH
TA = 25 C

Power Dissipation

TA = 70 C

ID

mJ
W

1.28

TJ, TSTG

Operating Junction & Storage Temperature Range

PD

-55 to 150

ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)

UNITS

VR = 25V

SYMBOL
IR

Schottky

Reverse Current

PARAMETERS/TEST CONDITIONS

0.05

mA

Forward Voltage

IF = 1A

VF

0.45

SYMBOL

TYPICAL

MAXIMUM

UNITS

62.5

C / W

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

RqJA

Junction-to-Ambient
1

Pulse width limited by maximum junction temperature.

Limited only by maximum temperature allowed

Ver 1.0

2012/4/12

PD1503YVS
Dual N-Channel Enhancement Mode MOSFET
Q2 ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS
MIN

TYP

MAX

1.7

UNIT

STATIC
V(BR)DSS

VGS = 0V, ID = 250mA

30

VGS(th)

VDS = VGS, ID = 250mA

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 20V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

VDS = 20V, VGS = 0V , TJ = 125 C

10

mA

On-State Drain Current1

ID(ON)

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State
Resistance1

VDS = 5V, VGS = 10V

RDS(ON)

Forward Transconductance1

gfs

35

VGS = 4.5V, ID = 7A

14.2

20

VGS = 10V, ID = 9A

10.5

15.8

VDS = 5V, ID = 9A

25

m
S

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss
Rg

Gate Resistance
Total Gate Charge

2
2

2
2

VGS = 0V, VDS = 0V, f = 1MHz

VDS = 0.5V(BR)DSS,
ID = 9A, VGS = 10V

Qgs
td(on)

tr

Turn-Off Delay Time

td(off)

Fall Time2

pF

295
139

Qgd

Turn-On Delay Time

Rise Time

VGS = 0V, VDS = 15V, f = 1MHz

Qg

Gate-Source Charge
Gate-Drain Charge

1040

1.5
20

nC

3.8
4.3
18

VDD = 15V, ID = 1A, VGS = 10V,

RG=6

12

nS

40

tf

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)

IS

Continuous Current
1

Forward Voltage
Reverse Recovery Time

VSD

Reverse Recovery Charge

Qrr

trr

IF = 9A, VGS = 0V
IF = 9A, dlF/dt = 100A / mS

Pulse test : Pulse Width 300 msec, Duty Cycle 2.

Independent of operating temperature.

Ver 1.0

2.8

0.7

15

nS

nC

2012/4/12

PD1503YVS
Dual N-Channel Enhancement Mode MOSFET
Q1 ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS
MIN

TYP

MAX

UNIT

STATIC
V(BR)DSS

VGS = 0V, ID = 250mA

30

VGS(th)

VDS = VGS, ID = 250mA

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 20V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

VDS = 20V, VGS = 0V , TJ = 125 C

10

mA

On-State Drain Current1

ID(ON)

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State
Resistance1

VDS = 5V, VGS = 10V

RDS(ON)

Forward Transconductance1

gfs

30

VGS = 4.5V, ID = 6A

25.6

32

VGS = 10V, ID = 7A

15.8

21

VDS = 5V, ID = 7A

15

m
S

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss
Rg

Gate Resistance
Total Gate Charge

2
2

2
2

VGS = 0V, VDS = 0V, f = 1MHz

VDS = 0.5V(BR)DSS,
ID = 7A, VGS = 10V

Qgs
td(on)

tr

Turn-Off Delay Time

td(off)

Fall Time2

pF

160
84

Qgd

Turn-On Delay Time

Rise Time

VGS = 0V, VDS = 15V, f = 1MHz

Qg

Gate-Source Charge
Gate-Drain Charge

560

2
11

nC

2.5
3.1
19

VDD = 15V, ID = 1A, VGS = 10V,RG=6

nS

39

tf

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)

IS

Continuous Current
1

Forward Voltage
Reverse Recovery Time

VSD

Reverse Recovery Charge

Qrr

trr

IF = 7A, VGS = 0V
IF = 7A, dlF/dt = 100A / mS

Pulse test : Pulse Width 300 msec, Duty Cycle 2.

Independent of operating temperature.

Ver 1.0

20

nS

12

nC

2012/4/12

PD1503YVS
Dual N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/12

PD1503YVS
Dual N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/12

PD1503YVS
Dual N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/12

PD1503YVS
Dual N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/12

PD1503YVS
Dual N-Channel Enhancement Mode MOSFET

Ver 1.0

2012/4/12