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Gia o Trinh Linh Kien
Gia o Trinh Linh Kien
Gia o Trinh Linh Kien
Li ni u
*********
Trang 1
Mc lc
--------Chng I ..........................................................................................................................................................................................4
MC NNG LNG V DI NNG LNG.........................................................................................................................4
I. KHI NIM V C HC NGUYN LNG: .................................................................................................................4
II. PHN B IN T TRONG NGUYN T THEO NNG LNG: .............................................................................6
III. DI NNG LNG: (ENERGY BANDS) ........................................................................................................................8
Chng II ......................................................................................................................................................................................12
S DN IN TRONG KIM LOI...........................................................................................................................................12
I.
II.
III.
IV.
V.
VI.
Chng III.....................................................................................................................................................................................22
CHT BN DN IN ...............................................................................................................................................................22
I. CHT BN DN IN THUN HAY NI BM: ........................................................................................................22
II. CHT BN DN NGOI LAI HAY C CHT PHA: ...................................................................................................24
1. Cht bn dn loi N: (N - type semiconductor) ...............................................................................................................24
2. Cht bn dn loi P:.........................................................................................................................................................25
3. Cht bn dn hn hp: .....................................................................................................................................................26
III. DN SUT CA CHT BN DN: ...............................................................................................................................27
IV. C CH DN IN TRONG CHT BN DN: ...........................................................................................................29
V. PHNG TRNH LIN TC: ..........................................................................................................................................30
Chng IV .....................................................................................................................................................................................32
NI P-N V DIODE.....................................................................................................................................................................32
I. CU TO CA NI P-N:.................................................................................................................................................32
II. DNG IN TRONG NI P-N KHI C PHN CC: .............................................................................................34
1. Ni P-N c phn cc thun:.........................................................................................................................................35
2. Ni P-N khi c phn cc nghch: ................................................................................................................................38
III. NH HNG CA NHIT LN NI P-N:..............................................................................................................40
IV. NI TR CA NI P-N. ..................................................................................................................................................41
1. Ni tr tnh: (Static resistance). .......................................................................................................................................41
2. Ni tr ng ca ni P-N: (Dynamic Resistance)............................................................................................................42
V. IN DUNG CA NI P-N. ............................................................................................................................................44
1. in dung chuyn tip (in dung ni)...........................................................................................................................44
2. in dung khuch tn. (Difusion capacitance) ................................................................................................................45
VI. CC LOI DIODE THNG DNG.................................................................................................................................45
1. Diode chnh lu: ..............................................................................................................................................................45
2. Diode tch sng. ..............................................................................................................................................................53
3. Diode schottky:................................................................................................................................................................53
4. Diode n p (diode Zenner):............................................................................................................................................54
5. Diode bin dung: (Varicap Varactor diode)..................................................................................................................57
6. Diode hm (Tunnel diode)...............................................................................................................................................58
Bi tp cui chng ......................................................................................................................................................................59
Chng V.......................................................................................................................................................................................61
TRANSISTOR LNG CC .....................................................................................................................................................61
I.
II.
III.
IV.
V.
VI.
CU TO C BN CA BJT..........................................................................................................................................61
TRANSISTOR TRNG THI CHA PHN CC. ....................................................................................................61
C CH HOT NG CA TRANSISTOR LNG CC. .........................................................................................63
CC CCH RP TRANSISTOR V LI DNG IN. .........................................................................................64
DNG IN R TRONG TRANSISTOR. ........................................................................................................................66
C TUYN V-I CA TRANSISTOR. ...........................................................................................................................67
1. Mc theo kiu cc nn chung: .........................................................................................................................................68
2. Mc theo kiu cc pht chung. ........................................................................................................................................69
3. nh hng ca nhit ln cc c tuyn ca BJT. .......................................................................................................72
VII. IM IU HNH NG THNG LY IN MT CHIU...............................................................................73
VIII. KIU MU MT CHIU CA BJT. .............................................................................................................................78
Trang 2
Trang 3
Chng I
MC NNG LNG V DI NNG LNG
Trong chng ny ch yu nhc li cc kin thc c bn v c hc nguyn lng,
s phn b in t trong nguyn t theo nng lng, t hnh thnh di nng lng
trong tinh th cht bn dn. hc chng ny, sinh vin ch cn c kin thc tng i
v vt l v ha hc i cng. Mc tiu cn t c l hiu c ngha ca di dn
in, di ha tr v di cm, t phn bit c cc cht dn in, bn dn in v cch
in.
mo
v2
1 2
c
Trang 4
h
= nh
2
h
=h
2
v
r
-e
+e
Hnh 1
h
.
mv
+ ( E U ) = 0
2.m
l ton t Laplacien
Trang 5
2 2 2
+
+
x 2 y 2 z 2
Nh vy: Tng K c ti a 2 in t.
Trang 6
Tng L c ti a 8 in t.
Tng M c ti a 18 in t.
Tng N c ti a 32 in t.
Cc tng O,P,Q cng c 4 ph tng v cng c ti a 32 in t.
ng vi mi ph tng c mt mc nng lng v cc mc nng lng c xp
theo th t nh sau:
1s
2s
3s
4s
5s
6s
7s
2p
3p
4p
5p
6p
7p
3d
4d
5d
6d
7d
4f
5f
6f
7f
Hnh 2
Khi khng b kch thch, cc trng thi nng lng nh b in t chim trc (gn
nhn hn) khi ht ch mi sang mc cao hn (xa nhn hn). Th d: nguyn t Na c s
in t z=11, c cc ph tng 1s,2s,2p b cc in t chim hon ton nhng ch c 1
in t chim ph tng 3s.
Cch biu din:
Theo mu ca Bohr
NATRI
Na
+11
Na 2-8-1
Trang 7
Si14
SILICIUM
Si
+14
Si 2-8-4
Ge32
GERMANIUM
Ge
+32
Ge 2-8-18-4
Hnh 3
Nng lng E
4N trng thi
cha b chim
6N trng thi p
(2N trng thi b chim)
Di dn in
2p
Di cm EG
Di cm
2s
2N trng thi s
b chim
Di ha tr
d0
d4
d3
d2
d1
Hnh 4
Vy, volt V =
W
Q Coloumb
W
Q
W
1,602 .10 -19
W = 1,602.10 19 Joule
1V =
Di cm
Di ho tr (Di nng lng
cao nht b chim)
Hnh 5
* Ta c 3 trng hp:
Trang 10
Di dn in
EG<5eV
Di ho tr
Di ho tr
(a)
(b)
(c)
Cht cch in
Cht bn dn
Cht dn in
Hnh 6
Trang 11
Chng II
S DN IN TRONG KIM LOI
Ni dung chnh ca chng ny l n li khi nim v linh ng ca in t, dn
sut ca kim loi, t a ra phng php kho st chuyn ng ca ht t bng nng
lng. Mc tiu cn t c l hiu r th nng ca in t trong kim loi, s phn b
in t theo nng lng, cng ra ca kim loi v tip th.
I. LINH NG V DN XUT:
Trong chng I, hnh nh ca di nng lng trong kim loi c trnh by.
Theo s kho st trn, di nng lng do in t chim c th cha y v khng c di
cm cho nhng nng lng cao. Ngha l in t c th di chuyn t do trong kim loi
di tc dng ca in trng.
E
Na
Hnh 1
Hnh trn v phn b in tch trong tinh th Na. Nhng ch gch cho tiu biu cho
nhng in t di ha tr c nng lng thp nht, nhng ch trng cha nhng in t
c nng lng cao nm trong di dn in. Chnh nhng in t ny l nhng in t
khng th ni thuc hn vo mt nguyn t nht nh no v c th di chuyn t do t
nguyn t ny sang nguyn t khc. Vy kim loi c coi l ni cc ion kt hp cht
ch vi nhau v xp u n trong 3 chiu trong mt m my in t m trong in
t c th di chuyn t do.
Hnh nh ny l s m t kim loi trong cht kh in t. Theo thuyt cht kh in
t kim loi, in t chuyn ng lin tc vi chiu chuyn ng bin i mi ln va
chm vi ion dng nng, c xem nh ng yn. Khong cch trung bnh gia hai ln
va chm c gi l on ng t do trung bnh. V y l chuyn ng tn lon, nn
mt thi im no , s in t trung bnh qua mt n v din tch theo bt c chiu
no s bng s in t qua n v din tch y theo chiu ngc li. Nh vy , dng in
trung bnh trit tiu.
Trang 12
en
x
e1
e2
Hnh 2
x
gi l vn tc trung bnh. Vn tc ny t l vi in
t
trng E . v = E
Hng s t l gi l linh ng ca in t, tnh bng m2/Vsec.
in tch i qua mi n v din tch trong mt n v thi gian c gi l mt dng
in J.
Ta c: J = n.e.v
Trong , n: mt in t, e: in tch ca mt electron
Nhng v = E nn J = n.e..E
Ngi ta t = n.e. (c l Sigma)
Nn J = E gi l dn xut ca kim loi
V =
S
v
Hnh 3
1
gi l in tr sut ca kim loi
Trang 13
A
5cm
v0
M(x)
EC = 2eV
10V
+
Hnh 4
1
mv 2 + U
2
Trang 14
Nng lng ny khng thay i. Trn th, T c biu din bng ng thng
song song vi trc x.
1
2
P
T
1
m.v 02
2
0
x0 = 1cm
5 cm
x (cm)
Hnh 5
Ti im M (x=x0) ta c:
T-U=0
M T=+Ec (nng lng ban u)
T=2.e.V
Vy, U=2.x0 (eV)
=> 2-2.x0=0
=> x0=1Cm
V=
k
+C
r
ke
r
-e
-e
r
Hnh 6
Trang 16
in t t do
0
EB
U0
in t buc
V0 = 0
EB
Hnh 7
Trang 17
E 0
n E dn E
=
E
dE
dn E = (E).dE
Vy,
n E
.
E
(1)
(2)
(E)
bng
n (E)
mt hm s f(E), c dng:
f (E) =
( E )
=
n (E)
1
1+ e
E E F
KT
1,381.10 23
= 8,62.10 5 (V/ 0 K)
e
T=00K
(E)
T=00K
T=25000K
T=25000K
EF
E
Trang 18
Hnh 8
EF
N(E) = .E 2 l hng s t l.
Lc , mt in t c nng lng E l:
1
(E ) = f (E ).N (E ) = .E .f (E )
2
EF
1
2
2
n = (E).dE = .E .dE = .E F2
3
0
0
( l f(E)=1 v T=00K)
T y ta suy ra nng lng Fermi EF
2
3 n 3
E F = .
2
Do , E F = 3,64.10 19.n 3
Nu bit c khi lng ring ca kim loi v s in t t do m mi nguyn t
c th nh ra, ta tnh c n v t suy ra EF. Thng thng EF < 10eV.
Th d, khi lng ring ca Tungsten l d = 18,8g/cm3, nguyn t khi l A = 184,
bit rng mi nguyn t cho v = 2 in t t do. Tnh nng lng Fermi.
Gii: Khi lng mi cm3 l d, vy trong mt cm3 ta c mt s nguyn t khi l
d/A. Vy trong mi cm3, ta c s nguyn t thc l:
Trang 19
d
23
.A 0 vi A0 l s Avogadro (A0 = 6,023.10 )
A
d
.A 0 .v.10 6
A
Vi Tungsten, ta c:
n=
18,8
3
.6,203.10 23.2.10 6 1,23.10 29 in t/m
184
2
3
E F 8,95eV
25000K
U
EB EW
EF
EF
EB
00K
0
(E)
0
Hnh 9
Trang 20
J th = A 0 T 2 e
Ew
KT
II
EW2
EW1
+-
Ei
II
VA > VB
Hnh 10
Gi s kim loi I c cng ra EW1 nh hn cng ra EW2 ca kim loi II. Khi ta ni hai
kim loi vi nhau, in t s di chuyn t (I) sang (II) lm cho c s t tp in t bn
(II) v c s xut hin cc Ion dng bn (I). Cch phn b in tch nh trn to ra mt
in trng Ei hng t (I) sang (II) lm ngn tr s di chuyn ca in t. Khi Ei
mnh, cc in t khng di chuyn na, ta c s cn bng nhit ng hc ca h thng
hai kim loi ni vi nhau. S hin hu ca in trng Ei chng t c mt hiu in th
gia hai kim loi.
Trang 21
Chng III
CHT BN DN IN
(SEMICONDUCTOR)
Trong chng ny ni dung chnh l tm hiu k cu trc v c im ca cht bn
dn in, cht bn dn loi N, cht bn dn loi P v cht bn dn tng hp. Kho st nh
hng ca nhit ln cht bn dn, t hiu c c ch dn in trong cht bn dn.
y l vt liu c bn dng trong cng ngh ch to linh kin in t, sinh vin cn nm
vng c th hc tt cc chng sau.
in t trong
di ha tr
Ni ha tr
Trang 22
in t t do trong
di dn in
Ni ha tr
b gy.
L trng trong
di ha tr
Hnh 2: Tinh th cht bn dn nhit cao (T = 3000K)
in t trong
di dn in
Mc fermi
Di ha tr
nhit thp (00K)
L trng trong
Di ha tr
nhit cao (3000K)
Hnh 3
Trang 23
Si
Si
in t tha ca As
trong di cm
Si
E
Di dn in
0,05eV
Si
As
Si
1,12eV
Si
Si
Si
Mc fermi tng
in t tha ca As
Di ha tr
nhit T = 00K
Di dn in
Di ha tr
Hnh 5
Trang 24
n: mt in t trong di dn in.
P: mt l trng trong di ha tr.
2. Cht bn dn loi P:
Thay v pha vo Si thun mt nguyn t thuc nhm V, ta pha vo nhng nguyn t
thuc nhm III nh Indium (In), Galium (Ga), nhm (Al),... Bn knh nguyn t In gn
bng bn knh nguyn t Si nn n c th thay th mt nguyn t Si trong mng tinh th.
Ba in t ca nguyn t In kt hp vi ba in t ca ba nguyn t Si k cn to thnh 3
ni ha tr, cn mt in t ca Si c nng lng trong di ha tr khng to mt ni vi
Indium. Gia In v Si ny ta c mt trang thi nng lng trng c nng lng EA nm
trong di cm v cch di ha tr mt khong nng lng nh chng 0,08eV.
Si
L trng
Si
Si
In
Si
Si
Si
Ni ha tr
khng c
thnh lp
Si
Hnh 6
Di dn in
3. Cht bn dn hn hp:
Ta cng c th pha vo Si thun nhng nguyn t cho v nhng nguyn t nhn
c cht bn dn hn hp. Hnh sau l s nng lng ca cht bn dn hn hp.
Di dn in
ED
ND
ED
EA
NA
EA
Di ha tr
nhit thp
(T = 00K)
nhit cao
(T = 3000K)
Hnh 8
Trang 26
L trng
in t trong di ha tr di chuyn v
bn tri to l
trng mi
Ni ha tr b gy
Hnh 9
L trng mi
L
trng mi
Ni ha tr mi b gy
Trang 27
Hnh 10
Dng in t trong
di dn in
Cht bn dn thun
Dng in t
trong di ha tr
Dng l trng
Hnh 11
Nh vy: J=e.(n.n+p.p).E
Theo nh lut Ohm, ta c:
J = .E
=> = e.(n.n+p.p) c gi l dn sut ca cht bn dn.
Trang 28
vkt
x
Hnh 12
In kt = D n .e.
dn
A<0
dx
Dn c gi l hng s khuch tn ca in t.
dn
dx
p
l trng b mt i, vi p l mt l trng v p l l i
p
dp
dx
Ngi ta chng minh c rng:
D p D n KT
T
=
=
= VT =
p
n
11.600
e
Jp kt = e.D p .
Vi:
p
l trng b mt i do s
p
p
(do ti hp)
p
Ip+dIp
x+dx
Ip
Gi g l mt l trng c sinh ra do tc dng nhit, trong mi giy, in tch trong hp
Hnh 13
tng ln mt lng l:
T1=e.A.dx.g
Vy in tch trong hp bin thin mt lng l:
p
T1 (G 1 + G 2 ) = e.A.dx.g e.A.dx. dIp
p
bin thin bng: e.A.dx.
dp
dt
Vy ta c phng trnh:
p dIp 1
dp
=g
.
(1)
p dx e.A
dt
Nu mu bn dn trng thi cn bng nhit v khng c dng in i qua, ta c:
Trang 30
dp
= 0; dIp=0; P=P0=hng s
dt
Phng trnh (1) cho ta:
P
p
g= 0
0=g
p
p
=
.
p
t
x eA
Gi l phng trnh lin tc.
Tng t vi dng in t In, ta c:
n n 0 I n 1
n
=
.
(3)
t
n
x eA
TD: ta gii phng trnh lin tc trong trng hp p khng ph thuc vo thi gian v
dng in Ip l dng in khuch tn ca l trng.
dp
dp
Ta c:
= 0 v I p = D p .eA.
dx
dt
P-P0
2
P(x0)-P0
dIp
d p
Do ,
= D p .eA. 2
dx
dx
Phng trng (2) tr thnh:
d 2 p P P0 P P0
= 2
=
dx 2 D p . p
Lp
Trong , ta t L p = D p . p
Nghim s ca phng trnh (4) l:
x
Lp
Lp
x0
x
Hnh 14
P P0 = A 1 .e + A 2 .e
V mt l trng khng th tng khi x tng nn A1 = 0
Do :
P P0 = A 2 .e
Lp
ti x = x0.
P-P0
Mt l trng l p(x0),
Do :
P( x 0 ) P0 = A 2 .e
Lp
P(x0)-P0
xx0
Lp
x0
x
Hnh 15
Trang 31
Chng IV
NI P-N V DIODE
(THE P-N JUNCTION AND DIODES)
Ni P-N l cu trc c bn ca linh kin in t v l cu trc c bn ca cc loi
Diode. Phn ny cung cp cho sinh vin kin thc tng i y v c ch hot ng
ca mt ni P-N khi hnh thnh v khi c phn cc. Kho st vic thit lp cng thc
lin quan gia dng in v hiu in th ngang qua mt ni P-N khi c phn cc. Tm
hiu v nh hng ca nhit ln hot ng ca mt ni P-N cng nh s hnh thnh
cc in dung ca mi ni. Sinh vin cn hiu thu o ni P-N trc khi hc cc linh
kin in t c th. Phn sau ca chng ny trnh by c im ca mt s Diode thng
dng, trong , diode chnh lu v diode zenner c ch trng nhiu hn do tnh ph
bin ca chng.
I. CU TO CA NI P-N:
Hnh sau y m t mt ni P-N phng ch to bng k thut Epitaxi.
SiO2
(Lp cch in)
(1)
(2)
Si-n+
Si-n+
(Thn)
SiO2
Lp SiO2
b ra mt
SiO2
Anod
(3)
Kim loi
SiO2
(4)
P
Si-n+
Si-n+
Catod
Kim loi
Hnh 1
Trc tin, ngi ta dng mt thn Si-n+ (ngha l pha kh nhiu nguyn t cho).
Trn thn ny, ngi ta ph mt lp cch in SiO2 v mt lp verni nhy sng. Xong
ngi ta t ln lp verni mt mt n c l trng ri dng mt bc x chiu ln mt
n, vng verni b chiu c th ra c bng mt loi axid v cha ra mt phn Si-n+,
phn cn livn c ph verni. Xuyn qua phn khng ph verni, ngi ta cho khuch
tn nhng nguyn t nhn vo thn Si-n+ bin mt vng ca thn ny thnh Si-p. Sau
Trang 32
+
+
N
V0
-
x1
- -
Ei
+
+
+
x2
V0= Ro in th
Ti mi ni
x1
x2
Hnh 2
Khi cn bng, ta c:
Jpkt+Jptr = 0
Trang 33
Hay l: e.D p .
dp
= e.p. p .E i
dx
D p dp
= E i .dx
.
p p
Dp
p
V E i =
= VT =
KT
e
dV
dx
Do : dV = VT .
dp
p
dV = VT
PPo
M: Pn o
Pn o
dp
p
n i2
v PPo N A
ND
PP
Nn: V0 = VT log o
Pn
o
Hoc: V0 =
KT N D N A
log
2
e
ni
Trang 34
+
Dng in t
Vng him
+ V0 I
R
(Gii hn dng
in)
VS +
V
P
V
Jnn
Jnp
Jnn
V0
VB
x1
N
Jpp
x1
x2
Hnh 3
=
.
x e.A
p
t
J pn ( x ) = e.D p .
dPn
dx
=
x =x 2
e.D p
Lp
[P (x
n
x x2
Lp
) Pn 0
dp
nh trong
p
trng hp ni cn bng.
dv = V
pn ( x 2 )
p p ( x1 ) p p0
dp
p
Ta c:
Pp
VB = V0 V = VT log 0
Pn
0
P (x )
Suy ra: V = VT log n 2
Pn
0
M:
Trang 36
Nn:
Pn ( x 2 ) = Pn 0 .e VT
Do : J pn ( x 2 ) = e.D p .
1
P( x 2 ) Pn 0
Lp
VV
J pn ( x 2 ) = e. .Pn 0 .e T 1
Lp
Tng t, ta c:
1
J np ( x1 ) = e.D n .
n p ( x1 ) n p 0
Ln
Dp
Dn
.n p 0 e VT 1
Ln
J np ( x1 ) = e.
V
VT
DP
Dn
J = e .p no +
.n po .e 1
Ln
LP
VT
DP
Dn
I = A .e
.p no +
.n po . e 1
Ln
LP
D
D
t: I 0 = A.e. P .p no + n .n po
Ln
LP
V
Ta c: I = I 0 e VT 1
V
> 10 e VT >> 1
thng, V thay i t 0,3 V n 0,7 V ty theo mi l Ge hay Si,
VT
Vy, I I 0 .e
V
VT
Trang 37
VV
I = I 0 e T 1
Vi = 1 khi mi ni l Ge
= 2 khi mi ni l Si
Ion dng
- -
+
+
+
Ro in th VB=VS
R
V
VB
V0
- VS +
Hnh 4
I = I 0 e T 1
I0 cng c tr s:
D
D
I 0 = A.e. P . p no + n .n po
Ln
LP
Thng thng, e
V
VT
<< 1 nn I # I0
Trang 38
+5V
D2
+ V1 -
+ V2 -
D1
Hnh_5
Vy: I = I0 e T 1 = I0 vi = 2 v VT = 0,026V
V2
0, 052
e
=2
V2 = 0,693.0,052 = 0,036(V)
Trang 39
Ge
Si
V
0,7V
0,3V
Vi chc A
Si
Ge
Phn cc nghch
P
N
Phn cc thun
P
N
- V<0 +
- V>0 +
I<0
I>0
Hnh 6
-7
V
-6
-5
250C
350C
450C
550C
-4
-3
I0
-2
-1
1
2
3
4
5
6
7
8
Hnh 7
Trang 40
2 t 25
10
2100 25
10
= 25nA.181
= 25nA.
I 0 (100 0 C) = 4,525A
2. Tnh cht ca ni P-N khi phn cc thun cng thay i theo nhit .
Khi nhit ca ni P-N tng, in th thm ca mi ni gim (ni d dn in
hn). Ngi ta thy rng, khi nhit tng ln 10C in th thm gim 1,8mV diode Si
v gim 2,02mV diode Ge. Mt cch tng qut c th coi nh in th thm gim 2mV
khi nhit tng ln 10C.
VD
= 2mV / 0 C
t
450C
350C
250C
I(mA)
Hnh 8
IV. NI TR CA NI P-N.
Ngi ta thng ch n hai loi ni tr ca ni P-N
Vs
Rs
P
N
Trang 41
Bin son:
Trng Vn Tm
(Volt)
Hnh 9
Ni tr ca ni ti im Q l:
RD =
V
I
Rs
I
P
N
Q
V
Hnh 10
I
bng vi dc ca tip tuyn ti im Q vi c tuyn ca
V
ni P-N.
t:
I 1
=
V rd
Vi tn hiu u nh, ta c:
V dV
rd =
=
I
dI Q
VV
Vi I = I 0 .e T 1
Suy ra:
Trang 42
1 VV
dI
= I0
.e T
dV
V
T
Ngoi ra,
V
VV
VT
T
1 = I0 .e
I = I0 .e
I0
Hay I + I0 = I0 .e VT
Do ,
dI I + I0
=
dV VT
V in tr ng l:
dI
VT
rd =
=
dV I + I0
VT
I
0
nhit bnh thng (25 C), VT = 26mV, in tr ng l:
.26mV
rd =
I(mA)
rp
in tr vng P
rd
rn
in tr vng N
rac=ro
rac = rp+rn+rd
= rb+rd
Hnh 11
dV
dI Q
Trang 43
V. IN DUNG CA NI P-N.
1. in dung chuyn tip (in dung ni)
Khi ni P-N c phn cc nghch, vng him c ni rng do c s gia tng in
tch trong vng ny. Vi mt s bin thin V ca hiu in th phn cc nghch, in
tch trong vng him tng mt lng Q. Vng him c tc dng nh mt t in gi l
in dung chuyn tip CT.
CT =
Q .A
=
V Wd
K
(V0 + VR )n
1
1
trong trng hp ni P-N l dc li (linearly graded juntion) v n = trong trng
3
2
P
RL
C j (0)
VR
1 +
V
0
- -
+
+
+
+
VR # VS
P
N
- VS +
Ni P-N khi phn cc nghchTrang 44
Hnh 12
Dc li
ng
Bin son:Dc
Trng
Vn Tm
I
VT
Trong , = P =
L2P
, l i sng trung bnh ca l trng; = 2 i vi ni P-N l
DP
Catod
K
K hiu
P
Hnh 13
Trang 45
Trc khi xem qua mt s s chnh lu thng dng, ta xem qua mt s kiu mu
thng dng ca diode.
Kiu mu mt chiu ca diode. Diode l tng (Ideal diode)
Trong trng hp ny, ngi ta xem nh in th ngang qua diode khi phn cc
thun bng khng v ni tr ca n khng ng k. Khi phn cc nghch, dng r cng
xem nh khng ng k.
Nh vy, diode l tng c xem nh mt ngt (switch): ngt in ng mch khi
diode c phn cc thun v ngt in h mch khi diode c phn cc nghch.
ID
Diode l tng
VD
Hnh 14
ISW
ISW
+ VSW = 0V
ISW
ISW = 0
+ VSW
VSW
VSW
Hnh 15
R
+
VS
+
VS
ID =
+
0V
-
VS
R
ID
c tuyn
V-I
VD
Phn cc thun
Trang 46
R
+
VS
ID = 0
+
VS
+
VD = -VS
-
ID
c tuyn
V-I
VD
Phn cc nghch
Hnh 15
ID + VK VDVK
+V -
VD
0
VD<VK ID = 0
+ VK Hnh 16
R
+
VS
Diode l tng
+
VS
+
VK
-
ID =
R
+
VS
VS>VK
VS VK
R
+
VK = VD
-
Hnh 17
Trang 47
+ VD
ID
ID -
ID
Diode thc
VK
VD
r0 =
1
VD
=
o doc I D
V0
VD
V0: in th offset
Diode l tng
+ VD
+ r0 - + V0
ID
VD= V0+r0ID
ID -
Hnh 18 - 19
Th d:
T c tuyn V-I ca diode 1N917(Si), xc nh in tr ng r0 v tm im iu
hnh Q(ID v VD) khi n c dng trong mch hnh bn.
ID (mA)
6
5
4
3
2
1
ID=4,77mA
ID=4,67mA
Vs=15V
Q
Q
R=3K
ID=?
+
VD=?
-
VD(volt)
Hnh 20
Gii:
Bc 1: dng kiu in th ngng:
V VK 15 0,7
I 'D = S
=
= 4,77 mA
R
3 K
Vs=15V
R=3K
ID=?
+
VD=0,7V
-
Hnh 21
Trang 48
Bc 2: vi ID =4,77mA, ta xc nh c im Q (VD=0,9V)
Bc 3: v tip tuyn ti Q vi c tuyn tm in th offset V0.
V0=0,74V
Bc 4: Xc nh r0 t cng thc:
VD
0,9 0,74 0,16
r0 =
=
=
32
DI D
4,77
4,77
ID
r0=32
ID =
VS=15V
VK= 0,74V
Hnh 22
V VD=V0+r0ID=0,74+0,00467x32=0,89V
Ch :
Vs=15V
R=3K
+
-50mV
Vs(t)
+
VD(t)?
-
Hnh 23
Gii:
Theo v d trc, vi kiu mu in th ngng ta c VD=0,7V v ID=4,77mA.
T ta tm c in tr ni rd:
26mV
26mV
=
= 5,45
rd =
ID
4,77 mA
rac=10 + 0,45=10,45
Mch tng ng xoay chiu:
Trang 49
rac
15,45
Vm =
.50
R + rac
15,45 + 3000
700mV
Vs(t)
0,256mV
VD(t)
R=3K
rac Vd(t)
t
Hnh 24
Kiu mu tn hiu rng v hiu ng tn s.
30V
RL VL(t)
Vs(t)
-
-30V
Bn k dng Diode dn
+30V
+
+
RL
Vs(t)
-30V
+30V
vS(t)
Diode ngng
+30V Bn k m
vL(t)
VL(t)=0 RL
Diode ngng
Vs(t)
Diode dn
-30V
Hnh 25
Trang 50
Khi diode c dng vi ngun tn hiu xoay chiu tn hiu bin ln, kiu mu
tn hiu nh khng th p dng c. v vy, ngi ta dng kiu mu mt chiu tuyn
tnh.
Kt qu l na chu k dng ca tn hiu, diode dn v xem nh mt ngt in
ng mch. na chu k m k tip, diode b phn cc nghch v c vai tr nh mt ngt
in h mch. Tc dng ny ca diode c gi l chnh lu na sng (mch chnh lu
s c kho st k gio trnh mch in t).
p ng trn ch ng khi tn s ca ngun xoay chiu VS(t) thp-th d nh in
50/60Hz, tc chu k T=20ms/16,7ms-khi tn s ca ngun tn hiu ln cao (chu k
hng nano giy) th ta phi quan tm n thi gian chuyn tip t bn k dng sang bn
k m ca tn hiu.
Khi tn s ca tn hiu cao, in th ng ra ngoi bn k dng (khi diode c
phn cc thun), bn k m ca tn hiu cng qua c mt phn v c dng nh hnh
v. Ch l tn s ca ngun tn hiu cng cao th thnh phn bn k m xut hin ng
ra cng ln.
vS(t)
vS(t)
t(ms)
t(ms)
vL(t)
vL(t)
t(ms)
t(ms)
Hnh 26
rd
rB
K
Phn cc thun
rr
K
A
Phn cc nghch
CT
CD
Hnh
Trang
51 27
+ Vd +
RL
Vs(t)
-
-vr
vd
0,7V
t
0
-Vr
if =
Hnh 28
Vf
RL
ir
Vr
ir =
RL
id
I0
tr
Trang 52
vS(t)
vS(t)
T=2tr
T=10tr
Tn hiu tn
s cao
Tn hiu tn
s thp
id(t)
id(t)
t
t
0
0
Hnh 29
3. Diode schottky:
Ta thy nh hng ca thi gian hi phc (tc thi gian chuyn mch) ln dng
sng ng ra ca mch chnh lu. rt ngn thi gian hi phc. Cc ht ti in phi di
chuyn nhanh, vng him phi hp. Ngoi ra, cn phi to iu kin cho s ti hp gia
l trng v in t d dng v nhanh chng hn. l nguyn tc ca diode schottky.
M hnh sau y cho bit cu to cn bn ca diode schottky.
Anod
SiO2
Catod
Nhm
Tip xc Ohm
Anod
N.Si
P-thn
Catod
Ro in th Schottky
Hnh 30
Ta thy trong diode schottky, thng ngi ta dng nhm thay th cht bn dn
loi P v cht bn dn loi N l Si. Do nhm l mt kim loi nn ro in th trong diode
schottky gim nh nn in th ngng ca diode schottky khong 0,2V n 0,3V.
l diode schottky c in th bo ho ngc ln hn diode Si v in th sp cng
nh hn diode Si.
Do thi gian hi phc rt nh ( i trng thi nhanh) nn diode schottky c dng
rt ph bin trong k thut s v iu khin.
Trang 53
Id (mA)
Diode
Schottky
Si
0,2
0,4
Si
VD (Volt)
0,6 0,7
Diode
Schottky
Hnh 31
Trang 54
+ VD -
ID (mA)
ID
Vng phn cc nghch
VZ=Vzener
0 VK=0,7V
V=-VD=VZ
I=-ID=IZ
Hnh 32
* nh hng ca nhit :
Khi nhit thay i, cc ht ti in sinh ra cng thay i theo:
Vi cc diode Zener c in th Zener VZ < 5V th khi nhit tng, in th Zener
gim.
Vi cc diode c in th Zener VZ>5V (cn c gi l diode tuyt -diode
avalanche) li c h s nhit dng (VZ tng khi nhit tng).
Vi cc diode Zener c VZ nm xung quanh 5V gn nh VZ khng thay i theo nhit
.
-4
-3
250C
-2
-1
600C
ID (mA)
0
VD(Volt)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-40
600C
Hnh 33
-30
250C
-20
-10
ID (mA)
0
VD(Volt)
-5
-10
-15
-20
-25
-30
-35
-40
-45
VZ. Khi in th phn cc nghch nh hn hay bng in th VZ, diode Zener khng dn
in (ID=0).
+ VZ -
+ VZ -
ID
-VZ
0 VD
IZ
VD=-VZ
ID=-IZ
Diode l tng
Hnh 34
IN749
4,3V
R=470
I
VS=615V
X Ti
+
VZ=4,3V
I
X Ti
Hnh 35
VS VZ 15 4,3
=
= 22,8mA
R
470
Trang 56
IZ
+ VZ -
ZZ + VZ0
IZ
IZT
Diode l tng
VZ
VZ0 VZT
Hnh 36
Q
A
=
V
Wd
C(pF)
c tuyn ca in dung theo
in th c dng nh sau:
80
60
40
20
0
-2
16
-4
-6
-8
-10
-12
-14
VR(Volt)
Hnh 37
Trang 57
Ci
Diode
bin dung
Hnh 38
IP
Anod
Diode thng
Diode hm
Catod
B
IV
Thung lng
V(volt)
VP
0,25
0,5V
Hnh 39
Khi phn cc nghch, dng in tng theo in th. Khi phn cc thun, in th
thp, dng in tng theo in th nhng khi ln n nh A (VP IP), dng in li t
ng gim trong khi in th tng. S bin thin nghch ny n thung lng B (VV IV).
Sau , dng in tng theo in th nh diode thng c cng cht bn dn cu to. c
tnh c th ca diode hm ty thuc vo cht bn dn cu to Ge, Si, GaAs (galium
Asenic), GaSb (galium Atimonic) Vng AB l vng in tr m (thay i t khong
50 n 500 mV). Diode c dng trong vng in tr m ny. V tp cht cao nn vng
him ca diode hm qu hp (thng khong 1/100 ln rng vng him ca diode
thng), nn cc ht ti in c th xuyn qua mi ni theo hin tng chui hm nn
c gi l diode hm.
T s Ip/Iv rt quan trng trong ng dng. T s ny khong 10:1 i vi Ge v 20:1
i vi GaAs.
Mch tng ng ca diode hm trong vng in tr m nh sau:
Trang 58
-Rd
RD
Ls
Cd
Hnh 40
Bi tp cui chng
1. Dng kiu mu l tng v in th ngng ca diode tnh dng in I1, I2, ID2 trong
mch in sau:
I
I
1
10V
ID2
D1 /Si
R2=350
D /Ge
2
R1=1K
2. Tnh dng in I1 v VO trong mch sau (dng kiu mu l tng v in th ngng ca
diode)
+12V
I
D1 /Si R1=1K
VO
R2=3K
D2/Si
-12V
Trang 59
I2
3. Tnh IZ, VO trong mch in sau khi R2 = 50 v khi R2 = 200. Cho bit Zener s dng
c VZ = 6V.
100
12V
IZ
R2
Trang 60
R2=3K
Chng V
TRANSISTOR LNG CC
(BIPOLAR JUNCTION TRANSISTOR-BJT)
I. CU TO C BN CA BJT
Transistor lng cc gm c hai mi P-N ni tip nhau, c pht minh nm 1947
bi hai nh bc hc W.H.Britain v J.Braden, c ch to trn cng mt mu bn dn
Germanium hay Silicium.
Hnh sau y m t cu trc ca hai loi transistor lng cc PNP v NPN.
Cc pht
E
Emitter
n+
Cc thu
n-
p+
C
Collecter
B
Transistor PNP
B Cc nn (Base)
Cc pht
E
Emitter
Cc thu
p-
C
Collecter
B Cc nn (Base)
B
Transistor NPN
Hnh 1
Ta nhn thy rng, vng pht E c pha m (nng cht ngoi lai nhiu), vng
nn B c pha t v vng thu C li c pha t hn na. Vng nn c kch thc rt hp
(nh nht trong 3 vng bn dn), k n l vng pht v vng thu l vng rng nht.
Transistor NPN c p ng tn s cao tt hn transistor PNP. Phn sau tp trung kho st
trn transistor NPN nhng i vi transistor PNP, cc c tnh cng tng t.
Trang 61
p
Vng nn
nVng thu
Vng him
E(eV)
n+ Vng pht
p Vng nn
n- Vng thu
Di dn in
Mc Fermi gim
Mc Fermi tng nh
Di ho tr
Di dn in
(Conductance band)
Mc Fermi xp thng
Di ho tr (valence band)
Hnh 2
Trang 62
Phn cc thun
n+
Dng in t
nIC
IE
RE
RC
IB
VEE
VCC
Dng in t
Hnh 3
Trang 63
IE
vo
IC
IB
ra
ra
vo
Kiu cc nn chung
IB
IC
IE
vo
Hnh 4
ra
h FE DC =
IC
IB
Nh vy:
y:
IC = DC.IB
Nhng: IE = IC + IB = DC.IB+IB
IE = (DC + 1).IB
li dng in trong cch rp cc nn chung c cho bi:
I
h FB DC = C
IE
IC IC IC IC
IE IB
Nh vy:
1=
1
1
DC DC
* Ghi ch: cc cng thc trn l tng qut, ngha l vn ng vi transistor PNP.
Ta ch dng in thc chy trong hai transistor PNP v NPN c chiu nh sau:
NPN
IB
PNP
IC
IB
IE
IC
IE
Hnh 5
Th d:
Mt transistor NPN, Si c phn cc sau cho IC = 1mA v IB = 10A.
Tnh DC, IE, DC.
Gii: t phng trnh:
I
1mA
DC = C , Ta c: dc =
= 100
IB
10A
T phng trnh:
Trang 65
IE = 0
RC
ICBO
VCC
ICBO
Hnh 6
n+
IE
nDCIE
ICBO
IE
IC = DCIE + ICBO
IB
RE
RC
VEE
VCC
Hnh 7
Trang 66
l cng thc l tng m ta thy phn trn. Ngoi ta, t phng trnh
dng in cn bn:
IE = IB + IC
DC =
Nhng:
1 + DC =
DC
DC
+1
1 + DC =
1 DC
1 DC
DC + 1 DC
1
=
1 DC
1 DC
RC
ICEO
VCC
IB = 0
ICEO
Openbase (cc nn h)
Collector (cc thu)
Cc nn h
Hnh 8
V11 Ng vo
BJT
VTrang
1
67
I2
V2
Bin
Ng ra
V22son: Trng Vn Tm
IE
I1
RC
IC
I2
+
V1
VEE
V2
+ VBE
VCC
VCB
Hnh 10
VCB = 20V
VCB = 10V
VCB = 01V
VCB = 00V
VCB h
IE (mA)
0,2
0,4
0,6
VBE (Volt)
Hnh 11
Nhn xt:
Trang 68
Vng bo ha
IC (mA)
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
ICBO
0
IE= 0mA
VCB (V)
Vng ngng
Hnh 12
Trang 69
RB
I1
IB
I2
+
VBB
RC
IC
V1
VCC
V2
VBE
VCB
Hnh 13
c tuyn ng vo:
Biu din s thay i ca dng in IB theo in th ng vo VBE. Trong hiu th
thu pht VCE chn lm thng s.
IB (A)
c tuyn nh sau:
100
VCE = 0V
VCE = 1V
80
VCE = 10V
60
40
20
0
VBE (V)
0,2
0,4
0,6
0,8
Hnh 14
c tuyn ng ra:
Biu din dng in cc thu IC theo in th ng ra VCE vi dng in ng vo IB
c chn lm thng s.
Dng c tuyn nh sau:
Trang 70
Vng tc ng
IC (mA)
120 A
100 A
80 A
Vng bo ha
60 A
40 A
2
20 A
1
ICEO
0
IB= 0 A
VCE (V)
Vng ngng
Hnh 15
Ta thy cng c 3 vng hot ng ca transistor: vng bo ho, vng tc ng v
vng ngng.
Khi ni tt VBE (tc IB=0) dng in cc thu xp x dng in r ICEO.
Trang 71
ICES = ICBO
VBE (V)
0
.1
.2
.3
6
.4
7
.5
8
Vng
Vng bo ho
tc ng
VBE(sat)
cut-in
Vng ngng
Hnh 16
Trang 72
500C
IC (mA)
IB (A)
250A
500C
200A
250C
150A
(2,2mV/0C)
100A
50A
IB =0A
VBE (mV)
645 700
IC (mA)
VCE (Volt)
500C
250C
VCE =15V
(2,2mV/0C)
10
Hnh 17
VBE (mV)
645 700
RC
+
IE
VBE
VEE
Vo
IC
VCB
VCC
Ra
Hnh 18
1. Mch ng vo:
Ta c: VBE + REIE - VEE = 0
V VBE
I E = EE
RE
Ch l VBE = 0,7V vi BJT l Si v VBE = 0,3V nu BJT l Ge.
VCB VCC
+
RC
RC
VCC
(Dng in bo ho)
RC
Khi IC = 0 (dng ngng), ta c: VCB = VCC = VOC
Khi VCB = 0 I C = I SH =
IC (mA)
IE = 6mA
IE = 5mA
IE = 4mA
I SH
V
= CC
RC
IE = 3mA
Q
VCBQ
IE = 2mA
IE = 1mA
0mA
VCB(Volt)
VCB=VCC=VOC
Hnh 19
Mt s nhn xt:
thy nh hng tng i ca RC,VCC, IE ln im iu hnh, ta xem v d sau y:
Trang 74
RE = 100
IC
IE = 3mA
VCC = 12V
VEE = 1V
Hnh 20
Ta c:
IC (mA)
6
5
4
IE = 3mA
2
1
VOC
0
10
12
VCB(Volt)
Trang 75
IC (mA)
8
7
6
5
4
IE = 3mA
2
1
VOC
7,5V
0
10
12
VCB(Volt)
Hnh 22
* Khi RC = 3 K (RC tng)
IC # IE =3mA
VCB = VCC - RC.IC = 12 - 3x3 = 3V
V
12
I SH = CC =
= 4mA
RC
3
IC (mA)
IE = 3mA
3
2
1
VOC
0
10
12
VCB(Volt)
Hnh 23
Th d:
RE = 100
IC (mA)
RC = 2K
+
VCC = 12V
IC
VCC = 10V
VCC: 10V
12V
14V
VEE = 1V
VCC = 14V
5
4
Q1
Q1
IE =3 (mA)
Q2
2
1
VCB
10
12
14
Hnh 24
3. nh hng ca IE ln im iu hnh:
Nu ta gi RC v VCC c nh, thay i IE (tc thay i RE hoc VEE) ta thy: khi IE
tng th VCB gim (tc IC tng), khi IC gim th VCB tng (tc IC gim).
IC (mA)
I C ( sat ) = I SH =
IE =6 (mA)
Q2
Q1
Q3
2
ICBO
VCC
RC
Q4
IE =5 (mA)
IE =4 (mA)
IE =3 (mA)
Tng
IE =2 (mA)
IE =1 (mA)
Gim
VCB
10
12
14
Hnh 25
VCC
RC
IE
DCIE
IC=DCIEIE
B
Transistor NPN
B
IE
B
Transistor PNP
DCIE
IC=DCIEIE
B
Hnh 26
Trang 78
RE
-
IE
0,7V
VEE
IC
VCB
+ -
Si
RE
0,7V
VCC
RC
-
IE
VEE
RC
- +
IC
VCB
VCC
Hnh 27
Ta dng 3 bc:
VEE 0,7
; IC # DC # IE
RE
p dng nh lut kirchoff (ng ra), ta c:
Vi transistor NPN: VCB = VCC - RC.IC; VCB > 0
Vi transistor PNP: VCB = -VCC + RC.IC; VCB <0
Th d 2: Tnh dng in IB, IC v in th VCE ca mch cc pht chung.
RB
RC
IB
VBB
0,7V +
+
VCE
RC
IB
V 0,7
Mch nn pht (ng vo): I B = BB
RB
VCC
RB
VBB
IC
+
0,7V -
+
VCE
-
IC
VCC
Hnh 28
Dng IC = DC .IB
Mch thu pht (ng ra)
Trang 79
C1
Tn hiu vo
VS(t)
RC
C2
V
Tn hiu ra
V0(t)
Hnh 29
RE
IE
0,7V
VEE
+ -
RC
+
VCB
ICIE
VCC
Hnh 30
iB(t) = IB + ib(t)
iC(t) = IC + ic(t)
iE(t) = IE + ie(t)
vCB(t) = VCB + vcb(t)
Trang 80
26mV
IE
n+
E
p
B
n-
ie
ic
ib
Hnh 31
ie
B
re
ib
rb
ro
Trang 81
2. in dn truyn (transconductance)
Ta thy rng, dng in cc thu IC thay i theo in th nn pht VBE. Ngi ta c
th biu din s thay i ny bng mt c tuyn truyn (transfer curve) ca transistor.
c tuyn ny ging nh c tuyn ca diode khi phn cc thun.
ID(mA)
IC(mA) = IE
ID=IO.exp(VD/VT)
IC=ICES.exp(VBE/VT)
VD(volt)
VBE(volt)
IC(mA)
ID=IO.exp(VD/VT)
Tip tuyn c
dc =gm=IC/VT
gmvbe
vbe
-
VBE(mV)
E
E
Hnh 33
VBE
VT
BE
dI C
I
gm =
= CES .e VT
dVBE
VT
Trang 82
V g m =
IC
( )
VT
IC
26mV
3. Tng tr vo ca transistor:
Ngi ta nh ngha tng tr vo ca transistor bng m hnh sau y:
iin
BJT
+
vin
-
v in
i in
R in =
Hnh 34
ie = -iin
E
vbe = -vin
-
R in =
v in v be
=
i in
ie
Hnh 35
re
-
re
-
ie
rb
ie
rb
+1
ib
ie
Hnh 36
Trang 83
R in =
rb
.
+1
v be
r
r + ( + 1)re
= b + re = b
ie
+1
+1
hie = rb+(+1).re
h
Suy ra: R in = ie
+1
t:
Do >>1, rb nh nn
rb
<< re nn ngi ta thng coi nh:
+1
rb
re
+1
Tng tr vo nhn t cc nn B:
R in = re +
ib = iin
vbe = vin
-
R in =
v be
ib
Hnh 37
B
+
ib
re
rb
ib
( + 1).re
ie
ib
Hnh 38
Trang 84
Vy:
R in =
v be
= rb + ( + 1)re = h ie
ib
Ngi ta t:
r=(1+).rere
Thng thng re>>rb nn: Rin=hie rre
1
26mV 26mV
1
1
Ngoi ra,
;
Vy: r =
v re =
re =
=
=
IC
IE
IC
gm
gm
gm
26mV
v
1
g m v be = i b
Ta ch thm l:
re be =
g m v be = i e i c = i b ;
ie
gm
Early voltage
VCE = -VA = -200V
10
40
VCE(volt)
30
20
50
IC(mA)
Q
ICQ
IC = ICQ
VCE(volt)
0
VCEQ
VA 200V
=
IC
IC
ic
rb
gmvbe
ro
vbe
E
Hnh 40(a)
Cng vi m hnh tng ng xoay chiu ca BJT, cc tng tr vo, tng tr ra, ta
c mch tng ng kiu re. Trong kiu tng ng ny, ngi ta thng dng chung
mt mch cho kiu rp cc pht chung v cc thu chung v mt mch ring cho nn
chung.
-
Trang 86
ic
ib
C (E)
IE
IB
re
ib
IC
IB
ro
vo
ra
ra
vo
vbe
Kiu cc nn chung
ic
ie
B
re
ie
IE
ro
IC
vo
Hnh (c)
ra
Kiu cc nn chung
i C
i
di B + C dv CE
i B
v CE
h fe = =
i C
i
; h oe = C
i B
v CE
Vy, ta c:
vbe = hie.ib + hre.vce
ic = hfe.ib + hoe.vce
T hai phng trnh ny, ta c mch in tng ng theo kiu thng s h:
Trang 87
hie
hrevce
hfeib
-
vbe
1
h oe
vce
E
Hnh 41
hre thng rt nh ( hng 10-4), v vy, trong mch tng ng ngi ta thng b
hre.vce.
g m vbe = h fe ib = h fe
Hay
gm =
Ngoi ra,
r0 =
vbe
;
h fe
h fe
h ie
1
h oe
1
mc song song vi ti. Nu ti khng ln lm (khong
h oe
vi chc K tr li), trong mch tng ng, ngi ta c th b qua r0 (khong vi trm
K).
Trang 88
ib
gmvbe
ic
ib
ro
hie
vbe
hfeib
1
h oe
vbe
E
Hnh 42
1
)
h oe
Trang 89
Bi tp cui chng
1. Tnh in th phn cc VC, VB, VE trong mch:
=100/Si
RE=1K
RC=3K
VC
VE
VEE
2V
VCC
12V
VB
+6V
RC
2K
IC
=100/Si
1K RE
VB
=100/Si
RB
33K
VBB
VE
2V
1K RE
Trang 90
CHNG 6
TRANSISTOR TRNG NG
(FIELD EFFECT TRANSISTOR)
Chng ta kho st qua transistor thng, c gi l transistor lng cc v s
dn in ca n da vo hai loi ht ti in: ht ti in a s trong vng pht v ht ti
in thiu s trong vng nn. transistor NPN, ht ti in a s l in t v ht ti
in thiu s l l trng trong khi transistor PNP, ht ti in a s l l trng v ht ti
in thiu s l in t.
in tr ng vo ca BJT (nhn t cc E hoc cc B) nh, t vi trm n vi
K, trong lc in tr ng vo ca n chn khng rt ln, gn nh v hn. L do l
BJT, ni nn pht lun lun c phn cc thun trong lc n chn khng, li khin
lun lun c phn cc nghch so vi Catod. Do , ngay t lc transistor BJT mi ra
i, ngi ta ngh n vic pht trin mt loi transistor mi. iu ny dn n s ra
i ca transistor trng ng.
Ta phn bit hai loi transistor trng ng:
Transistor trng ng loi ni: Junction FET- JFET
Transistor trng ng loi c cng cch in: Isulated gate FET-IGFET hay
metal-oxyt semiconductor FET-MOSFET.
Ngoi ra, ta cng kho st qua loi VMOS (MOSFET cng sut-Vertical chanel
MOSFET), CMOS v DMOS.
I. CU TO CN BN CA JFET:
M hnh sau y m t hai loi JFET: knh N v knh P.
Trong JFET knh N gm c hai vng n+ l hai vng ngun v thot. Mt vng npha t tp cht dng lm thng l (knh) ni lin vng ngun v vng thot. Mt vng pnm pha di thng l l thn v mt vng p nm pha trn thng l. Hai vng p v pni chung vi nhau to thnh cc cng ca JFET.
Trang 91
Thng l
(knh) NVng
ngun
Vng
cng
P
N+
Vng
thot
N+
Thn p- (c ni vi cng)
Hnh 1
JFET Knh P
K hiu
n
S
p+
D
p+
D
G
nS
Knh p-
S
n+
D
n+
D
G
p-
Knh n-
S (Source): cc ngun
D (Drain): cc thot
G (Gate): cc cng
Thot Thu
JFET
Knh N
S
C
B
BJT
NPN
Ngun Pht
E
C
D
G
JFET
Knh P
S
BJT
PNP
E
Cng Nn
Hnh 3
n+
S
Gate
p
Knh n-
n+
D
Thn p-
Hnh 4
Trang 93
VGS = 0V
S
n+
G
p
n-
Ni P-N vng
thot c phn
cc nghch
n+
p-
Hnh 5
Gate
Knh n-
n+ thot
Thn P- (Gate)
Hnh 6
R = .
L
; Trong , l in tr sut ca thng l. in tr sut l hm s theo
WT
B rng W
Thng l c b dy T
Di L
Hnh 7
ID (mA)
Dng in bo ha thot
ngun
Vng in tr ng thay
i khng tuyn tnh
VGS = 0V
IDSS
VDS (volt)
0
VP (Pinch-off voltage)
Hnh 8
Gate
Knh n-
n+ thot
Drain
Thn P- (Gate)
Trang 95
Vng him chm nhau
(thng l b nghn)
Nhng electron b ht v
cc dng ca ngun in
VGS
n+
n-
p
p-
D
n+
Ni P-N vng
thot c phn
cc nghch
Hnh 10
Trang 96
Thng l hp
hn nn in
tr ln hn. C
ngha l ID v IS
nh hn cng
mt tr VDS khi
VGS m hn
ID
Gate
Knh n-
n+ thot
Thn P- (Gate)
IDSS
VGS = 0
Dng
bo
ha ID
gim
VGS < 0
VP
Gate
VDS ng vi tr bo
ha gim
Thn P- (Gate)
Hnh 11
Khi VDS cn nh, ID cng tng tuyn tnh theo VDS, nhng khi VDS ln, thng l b
nghn nhanh hn, ngha l tr s VDS thng l nghn nh hn trong trng hp
VGS=0V v do , dng in bo ho ID cng nh hn IDSS.
Chm c tuyn ID=f(VDS) vi VGS l thng s c gi l c tuyn ra ca JFET
mc theo kiu cc ngun chung.
ID(mA)
VGS = 0V
c tuyn
|VDS| = |VP|-|VGS|
Vng bo ha (vng dng
in hng s)
VGS = -1V
VGS = -2V
VGS = -3V
VGS = -4V
VDS (volt)
VDS=VP=8V
Trang 97
VDS
VGS( off ) = VP
Gate
p
n+
S
n+
D
Knh n-
Thn p-
Hnh 13
IC IE
C
+
- VCB
IS
- VCE +
VBE
+
- VDS +
I D IS
D
VGS
IG (r) 0
IB nh
B
G
Hnh 14
Trang 98
Tn hiu
vo
Tn hiu
ra
Tn hiu
vo
Cng chung
Tn hiu
ra
Tn hiu
vo
Ngun chung
Tn hiu
ra
D
Thot chung
Hnh 15
Cch mc
FET
FET
BJT
Cc cng chung
Cc ngun chung
Cc thot chung
Cc nn chung
Cc pht chung
Cc thu chung
BJT
Cc thu C
Cc pht E
Cc nn B
Cc thot D
Cc ngun S
Cc cng G
VGS
VGS
I D = I DSS 1
hay I D = I DSS 1 +
VP
VGS( off )
G
+
VGS
-
V
VGG
ID
VDS
-
V
-
Hnh 16
Trang 99
VDD
12
c tuyn
truyn
c tuyn
ng ra
ID(mA)
VGS = 0V
VGS = -1V
VGS = -2V
VGS = -3V
VGS = -4V
VGS = -6V
-8 -6
-4
-2 0
8
VP
VDS (volt)
VGS(off)
Hnh 17
IV. NH HNG
NG CA NHIT TRN JFET.
Nh ta thy trong JFET, ngi ta dng in trng kt hp vi s phn cc
nghch ca ni P-N lm thay i in tr (tc dn in) ca thng l ca cht bn
dn. cng nh BJT, cc thng s ca JFET cng rt nhy i vi nhit , ta s kho st
qua hai tc ng chnh ca nhit :
Khi nhit tng, vng him gim, do rng ca thng l tng ln, do in
tr ca thng l gim. (ID tng)
Khi nhit tng, linh ng ca cc ht ti in gim (ID gim)
Do thng l tng rng theo nhit nn VGS(off) cng tng theo nhit . Thc
nghim cho thy VGS( off ) hay VP tng theo nhit vi h s 2,2mV/10C.
VGS
T cng thc: I D = I DSS 1
VGS( off )
Cho thy tc dng ny lm cho dng in ID tng ln. Ngoi ra, do linh ng ca
ht ti in gim khi nhit tng lm cho in tr ca thng l tng ln nn dng in
IDSS gim khi nhit tng, hiu ng ny lm cho ID gim khi nhit tng.
Tng hp c hai hiu ng ny, ngi ta thy nu chn tr s VGS thch hp th dng
thot ID khng i khi nhit thay i. Ngi ta chng minh c tr s ca VGS l:
Trang 100
VGS = 0
VGS = -1V
ID gim
|VGS| = |VP|-0,63V
ID tng
VDS
0
Hnh 18
ID
ID
VGS = -0V
-55 C 25 C +150 C
VGS = -1V
IDSS
|VGS| = |VP|-0,63V
(VDS c nh)
VGS(off
VGS
-100
-50
50
150
100
t0C
|VGS| = |VP|-0,63V
Hnh 19
Trang 101
( t 25 )
10
IGSS
D
G
VDS = 0V
S
VGG
Hnh 20
Trang 102
+ VGG
IGSS
+
VDS
-
+
VGS
VDD
JFET knh N
iu hnh
kiu tng
ID
ID
VGS = 0,2V
IDSS
VGS = 0V
iu hnh
kiu him
VGS = -1V
VGS = -2V
VGS = -3V
VGS
-4V
0 0,2V
VDS
0
Hnh 21
ID
+
VGG
D
G
+
VGS
VGG
VDS
+
VDD
Hnh 22
Trang 103
D
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
n+
Knh n-
K hiu
n+
Thn p-
Thn ni vi
ngun
DE-MOSFET knh N
S
Hnh 23
D
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
p+
Knh p-
K hiu
p+
Thn n-
Thn ni vi
ngun
DE-MOSFET knh P
S
Hnh 24
Trang 104
SiO2
n+
Knh n-
iu
hnh
theo
kiu
him
n+
Thn p-
Tip xc kim
loi cc cng
Knh n-
n+
thot
Thn pHnh 25
Trang 105
- VDD +
- VGG +
S
SiO2
iu
hnh
theo
kiu
tng
nn+
n+
in t tp trung
di sc ht ngun
dng ca cc cng
lm cho in tr
thng l gim
Thn p-
Hnh 26
Trang 106
ID (mA)
c tuyn
ng ra
IDmax
VGS = +2V
VGS = +1V
IDSS
VGS = 0V
iu hnh
kiu him
VGS = -1V
VGS = -2V
VGS(off) < 0
VGS = -3V
VGS
0 2V
VDS (volt)
0
Hnh 27
DE-MOSFET knh P
ID (mA)
c tuyn
truyn
iu hnh
kiu tng
ID (mA)
c tuyn
ng ra
IDmax
VGS = -2V
VGS = -1V
IDSS
VGS = 0V
iu hnh
kiu him
VGS = +1V
VGS = +2V
VGS(off) > 0
VGS
0 -2V
VGS = +3V
VDS (volt)
0
Hnh 28
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
n+
K hiu
n+
Thn p-
Thn ni vi
ngun
E-MOSFET knh N
S
Thn U
Hnh 29
D
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
p+
K hiu
p+
Thn n-
Thn ni vi
ngun
E-MOSFET knh P
S
Thn U
Hnh 30
Trang 108
Khi VGS < 0V, ( E-MOSFET knh N), do khng c thng l ni lin gia hai vng
thot ngun nn mc d c ngun in th VDD p vo hai cc thot v ngun, in t
cng khng th di chuyn nn khng c dng thot ID (ID # 0V). Lc ny, ch c mt
dng in r rt nh chy qua.
- VDD +
S
SiO2
VGS = 0V
n+
n+
I D = K VGS VGS( th )
Trong :
K=
ID
[V
GS
VGS( th )
10.10 3
] [8 3,8]
2
I D = K VGS VGS( th )
= 5,67.10 4
A
V2
= 5,67.10 4 [6 3,8]
ID = 2,74 mA
- VDD +
- VGG +
S
SiO2
VGS VGS(th) G
Thng l tm thi
n+
n+
Thn p-
ID (mA)
ID (mA)
c tuyn
ng ra
IDmax
c tuyn
truyn
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
VGS = 3V
VGS = 2V
VGS
0
VGS(th) VGSmax
VDS (volt)
0
Hnh 32
Trang 110
VII. XC NH IM IU HNH:
Ta xem m hnh ca mt mch khuch i tn hiu nh dng JFET knh N mc theo
kiu cc ngun chung
+VDD = 20V
RD = 820
C2
C1
v0(t)
+
vGS(t) -
RG
100K
-VGG = -1V
Hnh 33
RD = 820
IGSS
+
VGS
RG
+
VDS
- -
100K
VDD = 20V
VGG = -1V
Hnh 34
Trang 111
V
Dng c tuyn truyn hay cng thc: I D = I DSS 1 GS trong trng hp DE VGS( off )
2
MOSFET hoc cng thc I D = K VGS VGS( th ) trong trng hp E-MOSFET xc nh
ID
ID
I D ( sat ) =
IDSS
ng phn cc
VGS = -VGG = -1V
Q
VDD
RD
ng thng ly in
IDSS
VGS = 0V
Q
ID
ID
VGS = -1V
VGS = -2V
VGS = -3V
VGS = -4V
VGS
VGS(off)
-1
VDS
VDS
VDS(off) =VDD
Hnh 35
RD = 820
vS(t)
C1
+10mV
vS(t)
t
RG
C2
+
vDS(t)
+
vGS(t) -
v0(t)
100K
-10mV
-VGG = -1V
Hnh 36
-0,99V
-1V
-1,01V
vGS(t)
Hnh 37
theo tn hiu. thi im khi VGS t m hn, dng thot iD(t) tng v khi VGS m nhiu
hn, dng thot iD(t) gim. Vy dng in thot iD(t) thay i cng chiu vi vGS(t) v c
tr s quanh dng phn cc ID tnh (c gi s l 12,25mA). gia tng ca iD(t) v
gim ca iD(t) bng nhau vi tn hiu nh (gi s l 0,035mA). (Xem hnh trang sau).
S thay i dng in thot iD(t) s lm thay i hiu s in th gia cc thot v
cc ngun.
Ta c vDS(t) = VDD iD(t).RD. Khi iD(t) c tr s ti a, th vDS(t) c tr s ti thiu v
ngc li. iu ny c ngha l s thay i ca vDS(t) ngc chiu vi s thay i ca
dng iD(t) tc ngc chiu vi s thay i ca hiu th ng vo vGS(t), ngi ta bo in
th ng ra ngc pha - lch pha 180o so vi in th tn hiu ng vo.
Ngi ta nh ngha li ca mch khuch i l t s nh i nh ca hiu th
tn hiu ng ra v tr s nh i nh ca hiu th tn hiu ng vo:
AV =
vo (t)
vS ( t )
AV=2,87 -180o
Ngi ta dng du - biu din lch pha 180o
Trang 114
vS(t)
0,01V
0
-0,01V
12,285mA
t
0
Q
12,215mA
-1
-1,01V
-1V
VGS
-0,99V
VGS(off)
vGS(t)
iD(t) (mA)
-1,01V
12,285
12,250
12,215
-0.99V
VDD = +20V
t
0
RD = 820
iD(t)
vDS(t) (V)
vDS(t) C2
v0(t) = vds(t)
9,9837
9,9550
9,9263
t
0
v0(t)
0,0287V
0
Hnh 38
-0,0287V
Trang 115
iD v gs iD vDS
+
vGS Q
vDS Q
Ngi ta t:
gm =
Ta c:
i D
v GS
i d = g m v gs +
v
Q
1
v ds
ro
i
1
= D
ro v DS
(co the at
1
= go )
ro
vgs = r.ig
vgs
gmvgs
r0
vds
S
Hnh 40
Trang 116
id
vgs
gmvgs
r0
vds
S
Hnh 41
i d (t)
v gs ( t )
dc ti im Q l:
i
dI
I D
gm = D =
= d(t )
dVGS VGS v gs ( t )
VGS
I D = I DSS 1
VGS( off )
VGS (volt)
VGS(off)
ID
VGS
Hnh 42
VGS
I D = I DSS 1
VGS( off )
Trang 117
VGS
dI D
= I DSS 1
Ta suy ra: g m =
dVGS
VGS( off )
2I DSS
VGS
= 1
VGS
T ta thy: g m = g mo 1
VGS( off )
Trong : gm: l in dn truyn ca JFET hay DE-MOSFET vi tn hiu nh
gmo: l gm khi VGS= 0V
VGS: in th phn cc cng - ngun
VGS(off): in th phn cc cng - ngun lm JFET hay DE-MOSFET ngng.
2
VGS
Ngoi ra t cng thc: I D = I DSS 1
Ta suy ra:
VGS( off )
Vy:
VGS
ID
= 1
ID
I DSS
g m = g mo
Phng trnh trn cho ta thy s lin h gia in dn truyn gm vi dng in thot
ID ti im iu hnh Q. gmo c xc nh t cc thng s IDSS v VGS(off) do nh sn
xut cung cp.
X. IN DN TRUYN CA E-MOSFET.
Do cng thc tnh dng in thot ID theo VGS ca E-MOSFET khc vi JFET v
DE-MOSFET nn in dn truyn ca n cng khc.
T cng thc truyn ca E-MOSFET
I D = K VGS VGS( th )
Ta c: g m =
[[
dI D
d
=
K VGS VGS( th )
dVGS dVGS
g m = 2K VGS VGS( th )
Ngoi ra: VGS =
]]
2
ID
+ VGS( th )
K
Thay vo trn ta c: g m = 2 KI D
Trong :
gm: l in dn truyn ca E-MOSFET cho tn hiu nh
K: l hng s vi n v Amp/volt2
ID: Dng din phn cc cc thot D
Trang 118
Ta thy gm ty thuc vo dng in thot ID, nu gi gm1 l in dn truyn ca EMOSFET ng vi dng thot ID1 v gm2 l in dn truyn ca E-MOSFET ng vi dng
thot ID2
Ta c:
g m1 = 2 KI D1 v g m 2 = 2 KI D 2
nn: g m 2 = g m1
ID(mA)
IDmax
ID1
0
I D = K VGS VGS( th )
I D2
I D1
dc ti Q l gm1
VGS(th)
VGS (volt)
Hnh 43
VGS
VDS(volt)
Early voltage
Hnh 44
- Do JFET thng c dng theo kiu him (phn cc nghch ni cng - ngun)
nn tng tr vo ln (hng trm M). Ring E-MOSFET v DE-MOSFET do cc cng
cch in hn khi cc ngun nn tng tr vo rt ln (hng trm M). Kt qu l ngi
ta c th xem gn ng tng tr vo ca FET l v hn.
Vi FET : r
Trang 119
vgs
gmvgs
r0
id
vds
gmvgs
vgs
r0
vds
Hnh 45 (a)
Hnh 45 (b)
id
gmvgs
vgs
Hnh 45
vds
S
Hnh 45 (c)
Q1
G1
D1
Q2
vi(t)
S1
Q1 E-MOSFET
knh P
Q2 E-MOSFET
knh N
D2
v0(t)
G2
S2
Hnh 46
Trang 120
S2
S1
SiO2
G2
n+
D2
D1
n+
p+
G1
p+
p-
Thn n-
Hnh 47
vi(t)
G1
5V
t1
vo(t)
5V
D1
Q2
vi(t)
S1
D2
G2
v0(t)
0
t1
S2
Hnh 48
Trang 121
D1
Q2 N
D2
v0(t)
G2
vo(t)
t
S2
VGG =
G1
vi(t)
vi(t)
S1
VDD
= 7,5V
2
Hnh 49
VGG =
VDD
= 7,5V
2
1. V-MOS:
Tht ra y l mt loi E-MOSFET ci tin, cng l khng c sn thng l v iu
hnh theo kiu tng. s khc nhau v cu trc E-MOSFET v V-MOS c trnh by
bng hnh v sau:
Trang 122
Ngun
S
Cng
G
Thot
D
Ngun
S
SiO2
n+
n+
Thng l s
hnh thnh
Cng
G
Ngun
S
SiO2
n+
n+
p
n-
p- thn
n+
Thot
D
Thng l s
hnh thnh
E-MOSFET knh N
V-MOS knh N
Hnh 50
2. D-MOS:
Cng l mt loi E-MOSFET hot ng theo kiu tng, ng dng hin tng
khuch tn i (double-diffused) nn c gi l D-MOS. C cu trc nh sau:
Ngun
S
Cng
G
Ngun
S
n+
n+
p+
p+
nThn n+
DMOS knh N
Thng
l s
hnh
thnh
Thot D
Hnh 51
JFET
MOSFET
JFET
knh N
JFET
Knh P
DE-MOSFET
Kiu him + tng
DE-MOSFET
Knh N
DE-MOSFET
Knh P
E-MOSFET
Knh N
V-MOS
Knh N
E-MOSFET
Kiu tng
E-MOSFET
Knh P
V-MOS
Knh P
CMOS
D-MOS
Knh N
D-MOS
Knh P
Trang 124
Bi tp cui chng
1. Tnh VD, v in dn truyn gm trong mch:
+12V
RD
5K
VD
IDSS = 4mA
VGS(off) = -4V
RG
1M
1K RE
RG
2V
1M
3. Trong mch in sau, tnh in th phn cc VD, VG. Cho bit E-MOSFET c h s
mA
k = 1 2 v VGS(th) = 3V.
V
24V
24V
10M
RD
5K
VG
VD
2M
Trang 125
CHNG VII
LINH KIN C BN LP BN DN PNPN V
NHNG LINH KIN KHC
I. SCR (THYRISTOR SILICON CONTROLLED
RECTIFIER).
1. Cu to v c tnh:
SCR c cu to bi 4 lp bn dn PNPN (c 3 ni PN). Nh tn gi ta thy SCR
l mt diode chnh lu c kim sot bi cng silicium. Cc tp xc kim loi c to
ra cc cc Anod A, Catot K v cng G.
Anod
A
Anod
A
P
N
P
G
Cng
(Gate)
G
Cng
(Gate)
P
N
K
Catod
K
Catod
Cu to
M hnh tng ng
A
A
T1
IC1
IC2
IB2
T2
IG
K
K
M hnh tng ng
K hiu
Hnh 1
Trang 126
IA
IG
RG
G
Cng
(Gate)
P
N
VAK
P
N
RA
K
VGG
VAA
Hnh 2
Trang 127
SCR
IH
VBR
VAK
0
0,7V
VBO
Hnh 3
Trang 128
3. Cc thng s ca SCR:
Sau y l cc thng s k thut chnh ca SCR
- Dng thun ti a:
L dng in anod IA trung bnh ln nht m SCR c th chu ng c lin tc.
Trong trng hp dng ln, SCR phi c gii nhit y . Dng thun ti a ty
thuc vo mi SCR, c th t vi trm mA n hng trm Ampere.
- in th ngc ti a:
y l in th phn cc nghch ti a m cha xy ra s hy thc (breakdown).
y l tr s VBR hnh trn. SCR c ch to vi in th nghch t vi chc volt n
hng ngn volt.
- Dng cht (latching current):
L dng thun ti thiu gi SCR trng thi dn in sau khi SCR t trng thi
ngng sang trng thi dn. Dng cht thng ln hn dng duy tr cht t SCR cng
sut nh v ln hn dng duy tr kh nhiu SCR c cng sut ln.
- Dng cng ti thiu (Minimun gate current):
Nh thy, khi in th VAK ln hn VBO th SCR s chuyn sang trng thi dn
in m khng cn dng kch IG. Tuy nhin trong ng dng, thng ngi ta phi to ra
mt dng cng SCR dn in ngay. Ty theo mi SCR, dng cng ti thiu t di
1mA n vi chc mA. Ni chung, SCR c cng sut cng ln th cn dng kch ln. Tuy
nhin, nn ch l dng cng khng c qu ln, c th lm hng ni cng-catod ca
SCR.
- Thi gian m (turn on time):
L thi gian t lc bt u c xung kch n lc SCR dn gn bo ha (thng l
0,9 ln dng nh mc). Thi gian m khong vi S. Nh vy, thi gian hin din ca
xung kch phi lu hn thi gian m.
- Thi gian tt (turn off time):
tt SCR, ngi ta gim in th VAK xung 0Volt, tc dng anod cng bng 0.
Th nhng nu ta h in th anod xung 0 ri tng ln ngay th SCR vn dn in mc
d khng c dng kch. Thi gian tt SCR l thi gian t lc in th VAK xung 0 n
lc ln cao tr li m SCR khng dn in tr li. Thi gian ny ln hn thi gian m,
thng khong vi chc S. Nh vy, SCR l linh kin chm, hot ng tn s thp, ti
a khong vi chc KHz.
- Tc tng in th dv/dt:
Trang 129
dV
. Dng in ny chy vo cc nn ca T1. Khi dV/dt
dt
ln th icb ln sc kch SCR. Ngi ta thng trnh hin tng ny bng cch mc
mt t C v in tr R song song vi SCR chia bt dng icb.
A
C
R
K
Hnh 4
Trang 130
SCR dn
V Ti
Ti L
V
Gc dn
220V/50Hz
IG
Hnh 5
IG
tng cng sut cho ti, ngi ta cho SCR hot ng ngun chnh lu ton k.
V Ti
Ti L
Gc dn
220V/50Hz
IG
Hnh 6
IG
5. Vi ng dng n gin:
Mch n khn cp khi mt in:
D1
D2
T1
220V/
50Hz
R1
SCR
6,3V
6,3V
D3
100uF
R3 1K
R2 150
+
-
ACCU 6V
DEN
Hnh 7
Trang 131
Bnh thng n 6V chy sng nh ngun in qua mch chnh lu. Lc ny SCR ngng
dn do b phn cc nghch, accu c np qua D1, R1. Khi mt in, ngun in accu s lm
thng SCR v thp sng n.
D1
6,3V
SCR1
R2 47 2W
SCR2
D3
6,3V
RR3
4 47
1K2W
+
-
VR
750
2W
VZ = 11V
R3 1K
6V
ACCU 12V
D2
50uF
~220V
~ 110V
R1 47 2W
Hnh 8
- Khi accu np cha y, SCR1 dn, SCR2 ngng
- Khi accu np y, in th cc dng ln cao, kch SCR2 lm SCR2 dn, chia bt
dng np bo v accu.
- VR dng chnh mc bo v (gim nh dng np)
Trang 132
T2
T2
p
n
G
Cng
(Gate)
T1
u
T1
u
T2
T2
IG
T2
IG
G
T1
T2
T1
u
p
n
T1
T1
Hnh 9
+
T1
Trang 133
T2
IH
V21
-VBO
V21
0
G
IG
0,7V
+VBO
T1
Hnh 10
T2
T2
Cch 1
T2
IG < 0 T1
T2
IG > 0 T1
IG < 0 T1
Cch 2
Cch 3
IG > 0 T1
Cch 4
Hnh 11
Trang 134
Cch (1) v cch (3) nhy nht, k n l cch (2) v cch (4). Do tnh cht dn in
c hai chiu, Triac dng trong mng in xoay chiu thun li hn SCR. Th d sau y
cho thy ng dng ca Triac trong mng in xoay chiu.
220V/50Hz
+ VL Ti
Triac dn
VL
. +
D1
- .
D2
VR
Gc dn
Hnh 12
Anod
A
GK
Cng
Catod
P
N
K
Catod
Cu to
GA
P
N
GA
GA
Cng
Anod
GA
GK
GK
K
GK
K hiu
M hnh tng ng
Hnh 13
Nh vy, khi ta p mt xung dng vo cng catod thi SCS dn in. Khi SCS ang
hot ng, nu ta p mt xung dng vo cng anod th SCS s ngng dn. Nh vy, i
vi SCS, cng catod dng m SCS, v cng anod dng tt SCS. Tuy c kh nng
nh SCR, nhng thng ngi ta ch ch to SCS cng sut nh (phn ln di vi trm
miniwatt) v do cng catod rt nhy (ch cn kch cng catod khong vi chc A) nn
SCS c ng dng lm mt switch in t nhy.
V d sau l mt mch bo ng dng SCS nh mt cm bin in th:
Trang 135
+12V
Relais ng
mch bo
ng
Relay
1K
1K
LED
10K
INPUT 1
1K
LED
10K
INPUT 2
LED
10K
INPUT 3
Hnh 15
IV. DIAC
V cu to, DIAC ging nh mt SCR khng c cc cng hay ng hn l mt
transistor khng c cc nn. Hnh sau y m t cu to, k hiu v mch tng ng
ca DIAC.
Anod 1
Anod 1
Anod 1
Anod 2
K hiu
Anod 2
Anod 2
Tng ng
Anod 1
p
n
n
Anod 2
Cu to
Hnh 16
Trang 136
-VBO
VR
110V/50Hz
220V/50Hz
V
+VBO
C
Hnh 18
Hnh 17
V. DIOD SHOCKLEY.
Diod shockley gm c 4 lp bn dn PNPN (diod 4 lp) nhng ch c hai cc. Cu
to c bn v k hiu cng vi c tuyn Volt-Ampere khi phn cc thun c m t
hnh v sau y:
Anod
A
+ A
IA
P
N
P
N
K
Catod
+
Vf
-
IBO
Vf
0
- K
VBO
Hnh 19
Trang 137
Anod
A
Anod
A
P
N
G
Cng
G
Cng
P
N
K
Catod
K hiu
K
Catod
Hnh 21
Trang 138
Tuy c k hiu khc vi SCR v SCS nhng cc tnh cht th tng t. S khc bit
c bn cng l s tin b ca GTO so vi SCR hoc SCS l c th m hoc tt GTO ch
bng mt cng (m GTO bng cch a xung dng vo cc cng v tt GTO bng cch
a xung m vo cc cng).
- So vi SCR, GTO cn dng in kch ln hn (thng hng trm mA)
- Mt tnh cht quan trng na ca GTO l tnh chuyn mch. Thi gian m ca
GTO cng ging nh SCR (khong 1s), nhng thi gian tt (thi gian chuyn t trng
thi dn in sang trng thi ngng dn) th nh hn SCR rt nhiu (khong 1s GTO
v t 5s n 30s SCR). Do GTO dng nh mt linh kinc chuyn mch nhanh.
GTO thng c dng rt ph bin trong cc mch m, mch to xung, mch iu ho
in th mch sau y l mt ng dng ca GTO to tn hiu rng ca kt hp vi
Diod Zener.
VAA=+200V
R1
VR
+Vo
VR
C1
R2
Hnh 22
Trang 139
1. Cu to v c tnh ca UJT:
Hnh sau y m t cu to n gin ho v k hiu ca UJT
B2
Nn
B1
E
E
Pht
B2
nE
B2
B1
Nn
B1
Hnh 24
B2
RE
B1
RE
VBB
EE
EE
B2
D1
R
B2
VBB
R
B1
B1
Hnh 25
Trang 140
I E =0
Vy in th ti im A l:
VA =
R B1
VBB = .VBB > 0
R B1 + R B 2
Trong : =
R B1
R
= B1
R B1 + R B 2 R BB
VE
nh
VP
VP
0
VV
0
IP
Vng
in tr
m
IV
Thung
lng
VV
IE
IV
IE
Hnh 26
Trang 141
Khi VE=VP, ni P-N phn cc thun, l trng t vng pht khuch tn vo vng nv di chuyn n vng nn B1, lc l trng cng ht cc in t t mass ln. V dn
in ca cht bn dn l mt hm s ca mt in t di ng nn in tr RB1 gim.
Kt qu l lc dng IE tng v in th VE gim. Ta c mt vng in tr m.
in tr ng nhn t cc pht E trong vng in tr m l: rd =
VE
I E
Khi IE tng, RB1 gim trong lc RB2 t b nh hng nn in tr lin nn RBB gim.
Khi IE ln, in tr lin nn RBB ch yu l RB2. Kt thc vng in tr m l vng
thung lng, lc dng IE ln v RB1 qu nh khng gim na (ch l dng ra cc
nn B1) gm c dng in lin nn IB cng vi dng pht IE ) nn VE khng gim m bt
u tng khi IE tng. Vng ny c gi l vng bo ha.
Nh vy ta nhn thy:
- Dng nh IP l dng ti thiu ca cc pht E t UJT hot ng trong vng
in tr m. Dng in thung lng IV l dng in ti a ca IE trong vng in tr m.
- Tng t, in th nh VP l in th thung lng VV l in th ti a v ti thiu
ca VEB1 t UJT trong vng in tr m.
Trong cc ng dng ca UJT, ngi ta cho UJT hot ng trong vng in tr m,
mun vy, ta phi xc nh in tr RE IP<IE<IV
Th d trong mch sau y, ta xc nh tr s ti a v ti thiu ca RE
+VBB
VBB > VP
VEB1
VEB1
REmax
REmin
VP
B2
+
VEB1
-
B1
IE
0
VV
IE
0 IP
IV
Hnh 27
Trang 142
Ta c: R E max =
V R E min =
Nh vy:
V VP VBB VP
V
= BB
=
I
0 IP
IP
V VV VBB VV
V
= BB
=
I
0 IV
IV
VBB VV
V VP
R E BB
IV
IP
R B1
R
= B1 T s ny cng c nh ngha khi cc pht E
R B1 + R B 2 R BB
h.
- in th nh VP v dng in nh IP. VP gim khi nhit tng v in th
ngng ca ni PN gim khi nhit tng. Dng IP gim khi VBB tng.
tng.
Trang 143
R2
B2
E
VBB
B1
R1
Hnh 28
Khi nhit tng, in tr lin nn RBB tng nn in th lin nn VB2B1 tng. Chn
R2 sao cho s tng ca VB2B1 b tr s gim ca in th ngng ca ni PN. Tr ca R2
c chn gn ng theo cng thc: R 2
(0,4 0,8)R BB
VBB
E 10K
R2 330
VB2
VBB
+12V
VC1 = VP
Ngi ta thng dng UJT lm thnh mt mch dao ng to xung. Dng mch v
tr s cc linh kin in hnh nh sau:
VE
C1 np
VB2
C1 x (rt nhanh)
t
VB1
t
VB1
C1 .1
R1
22
t
0
VP
VE
VV
Hnh 29
Trang 144
20K
+
470uF
-
V=20V
z
Ti
330
100K
UJT
F1
B2
FUSE
.1
B1
SCR
110V/50Hz
220V/50Hz
47
Hnh 30
Anod
A
P
N
IA
G
Cng
G
Cng
K
Catod
Cu to
R
B2
R
VAK
P
N
VAA
K
Catod
K hiu
VGK
R
B1
Phn cc
Hnh 31
Trang 145
R B1
VBB = VBB
R B1 + R B 2
Trong : =
R B1
nh c nh ngha trong UJT
R B1 + R B 2
VP
VAK
Vng in tr m
IV
IP
IA
Hnh 32
Tuy PUT v UJT c c tnh ging nhau nhng dng in nh v thung lng ca
PUT nh hn UJT
+ Mch dao ng th gin dng PUT
+VBB
R
VA
Np
R
B2
VP
C
VV
K
R
R
B1
K
t
0
Hnh 33
Trang 146
VK
VK = VP-VV
t
Hnh 34
Trang 147
CHNG VIII
LINH KIN QUANG IN T
Trong chng ny, chng ta ch cp n mt s cc linh kin quang in t thng
dng nh quang in tr, quang diod, quang transistor, led cc linh kin quang in t
qu c bit khng c cp n.
I. NH SNG.
Sng v tuyn trong h thng truyn thanh, truyn hnh, nh snh pht n tia X
trong y khoa Tuy c cc cng dng khc nhau nhng li c chung mt bn cht v
c gi l sng in t hay bc x in t. im khc nhau c bn ca sng in t l
tn s hay bc sng. Gia tn s v bc sng lin h bng h thc =
c
f
Trong
c l vn tc nh sng = 3.108m/s
f l tn s tnh bng Hz
Bc sng tnh bng m. Ngoi ra ngi ta thng dng cc c s:
m = 10-6m ; nm = 10-9m v Amstron = =1010m
Hng ngoi
(=750nm)4.1014Hz
T ngoi
(=380nm)7,8.1014Hz
Lam
Cyan
470
500
Xanh l
Green
560
Trang 148
Vng
Yellow
590
Cam
Orange
650
Red
750nm
K hiu
Hnh dng
Hnh 1
0,1
10
100 1000
fc
Hnh 2
B+
R1
SCR
Hnh 3
Bng n
DIAC
15K
A
TRIAC
220V/50Hz
110V/50Hz
1K
.1
Hnh 4
Trang 150
V
K hiu
Phn cc
Hnh 5
Trang 151
Se
Si
Ge
75
50
25
0
2000
T ngoi
(Ao)
4000
6000
8000
10000
12000
14000
Dng in nghch mA
0,5
4000fc
0,4
3000fc
0,3
2000fc
0,2
1000fc
0,1
Dng ti
L=0
in th phn cc nghch
0
Hnh 7
c tuyn V-I ca quang diod vi quang thng l thng s cho thy quang thng
nh khi in th phn cc nghch nh, dng in tng theo in th phn cc, nhng khi
in th phn cc ln hn vi volt, dng in gn nh bo ha (khng i khi in th
phn cc nghch tng). khi quang thng ln, dng in thay i theo in th phn cc
nghch. Tn s hot ng ca quang diod c th ln n hnh MHz. Quang diod cng
nh quang in tr thng c dng trong cc mch iu khin ng - m mch
in (dn in khi c nh sng chiu vo v ngng khi ti).
Trang 152
IC (mA)
hf
IC
Quang thng
VCC 2
1
K hiu
1
0
Phn cc
VCE
c tuyn V-I
Hnh 8
T2
G
Quang transistor
K
Quang SCR
Quang Darlington
T1
Quang TRIAC
Hnh 9
volt
5K
9V
Hnh 10
2. ng hay tt Relais:
+12V
+12V
Relay
.1
T2
R
C
R
T2
T1
Relay
.1
T1
Hnh 11
Trang 154
hf
Di ha tr
Hnh 12
R
Vcc
LED
ID
VD
10
8
6
4
2
0
K hiu
Phn cc
GaAsP
GaAsP vng
Si GaAs
GaP lc
.7 1
1.5 2
c tuyn
3 VD (volt)
Hnh 13
c nh sng lin tc, ngi ta phn cc thun LED. Ty theo vt liu cu to,
in th thm ca LED thay i t 1 n 2.5V v dng in qua LED ti a khong vi
mA.
VI. NI QUANG.
(OPTO COUPLER-PHOTOCOUPLER-OPTOISOLATOR)
Trang 155
3
4N25 (Transistor output)
4
4N29 (Darlington output)
3
HC11C2 (SCR output)
4
MOC3021 (Triac output)
Hnh 14
270
Ti
U1
MOC3021
Q1
510
510
In 3V 30V
150
51
110Vrms
220VAC
Hnh 15
Trang 156
CHNG IX
S LC V IC
I. KHI NIM V IC - S KT T TRONG H THNG
IN T.
IC (Intergated-Circuit) l mt mch in t m cc thnh phn tc ng v th ng
u c ch to kt t trong hoc trn mt (subtrate) hay thn hoc khng th tch
ri nhau c. ny, c th l mt phin bn dn (hu ht l Si) hoc mt phin cch
in.
Mt IC thng c kch thc di rng c vi trm n vi ngn micron, dy c vi
trm micron c ng trong mt v bng kim lai hoc bng plastic. Nhng IC nh vy
thng l mt b phn chc nng (function device) tc l mt b phn c kh nng th
hin mt chc nng in t no . S kt t (integration) cc thnh phn ca mch in
t cng nh cc b phn cu thnh ca mt h thng in t vn l hng tm ti v theo
ui t lu trong ngnh in t. Nhu cu ca s kt t pht minh t s kt t tt nhin ca
cc mch v h thng in t theo chiu hng t n gin n phc tp, t nh n ln,
t tn s thp (tc chm) n tn s cao (tc nhanh). S tin trin ny l hu qu tt
yu ca nhu cu ngy cng tng trong vic x l lng tin tc (information) ngy cng
nhiu ca x hi pht trin.
Nhng h thng in t cng phu v phc tp gm rt nhiu thnh phn, b phn.
Do ny ra nhiu vn cn gii quyt:
1. Khong khng gian m s lng ln cc thnh phn chim ot (th tch). Mt
my tnh in t cn dng n hng triu, hng vi chc triu b phn ri. Nu khng
thc hin bng mch IC, th khng nhng th tch ca n s ln mt cch bt tin m
in nng cung cp cho n cng s v cng phc tp. M nu c tha mn chng na, th
my cng khng thc dng.
2. kh tn (reliability) ca h thng in t: l ng tin cy trong hot ng
ng theo tiu chun thit k. kh tn ca mt h thng tt nhin ph thuc vo
kh tn ca cc thnh phn cu thnh v cc b phn ni tip gia chng. H thng cng
phc tp, s b phn cng tng v ch ni tip cng nhiu. V vy, nu dng b phn ri
cho cc h thng phc tp, kh tn ca n s gim thp. Mt h thng nh vy s trc
trc rt nhanh.
3. Tui th trung bnh t ca mt h thng in t gm n thnh phn s l:
1
1
1
=
+
+ ......
t
t1
t2
Nu t1=t2=...=tn th t =
1
tn
ti
n
Trang 157
Vt liu
Mch in
t c bn
B phn cu
thnh h thng
H thng
in t
1947
1950
Cng
ngh
Pht
minh
Transi
-stor
Linh
kin
ri
S
Transistor
trn 1
chip trong
cc sn
phm
thng
mi
Cc sn
phm tiu
biu
BJT
Diode
1966
1971
1980
1985
1990
SSI
MSI
LSI
VLSI
ULSI
GSI
10
100
1000
1000
20000
20000
500000
>500000
>1000000
1961
Linh
Mch
kin
m, a
planar,
hp,
Cng
mch
logic,
cng
Flip Flop
Vi x
Vi x
l 8 bit,
l 16 v
ROM,
32 bit
RAM
Vi x l
chuyn
dng, x
l nh,
thI gian
thc
im hn, ni).
- Tng cht lng (do gi thnh h, cc mt phc tp hn c th c chn h thng
t n nhng tnh nng tt nht).
- Cc linh kin c phi hp tt (matched). V tt c cc transistor c ch to ng
thi v cng mt qui trnh nn cc thng s tng ng ca chng v c bn c cng
ln i vi s bin thin ca nhit .
- Tui th cao.
i khi ngi ta c th thm nhng thnh phn khc hn ca cc thnh phn k trn
dng cho cc mc ch c th
Trang 159
Thc ra khi ch to, ngi ta c th dng qui trnh phi hp. Cc thnh phn tc
ng c ch to theo cc thnh phn k thut planar, cn cc thnh phn th ng th
theo k thut mng. Nhng v qu trnh ch to cc thnh phn tc ng v th ng
c thc hin khng ng thi nn cc c tnh v thng s ca cc thnh phn th
ng khng ph thuc vo cc c tnh v thng s ca cc thnh phn tc ng m ch
ph thuc vo vic la chn vt liu, b dy v hnh dng. Ngoi ra, v cc transistor ca
IC loi ny nm trong , nn kch thc IC c thu nh nhiu so vi IC cha transistor
ri.
IC ch to bng qui trnh phi hp ca nhiu u im. Vi k thut mng, trn mt
din tch nh c th to ra mt in tr c gi tr ln, h s nhit nh. iu khin tc
ngng ng ca mng, c th to ra mt mng in tr vi chnh xc rt cao.
n - Si
0.15mm
Nn P-Si
0.5m
n - Si
Nn P-Si
0.15mm
Hnh 1
Trang 160
Bc 2:
uv
SiO2
n-Si
P-Si
Ha tan Rn li
Cht cm
quang
SiO2
n-Si
P-Si
Ha tan
SiO2
n-Si
P-Si
Khuch tn p
SiO2
o
Thn
P
Khuch tn Base
Th d:
Mt mch in n gin nh sau, c ch to di dng
IC n tinh th.
SiO2
p
4
SiO2
n
p
D1
Hnh 3
Khuch tn Emitter
1
D1
Nn
P
n
Nn
P
Hnh 2
Trang 161
in tr
2
Kim loi Al
Diode
1
B
Diode ni
3
n+
SiO2
Transistor
5
4
n+
n+
n+
Base
p
n
n+
n Collector
Thn p
Hnh 4
Emitter
1. IC Digital:
L loi IC x l tn hiu s. Tn hiu s (Digital signal) l tn hiu c tr gi nh phn
(0 v 1). Hai mc in th tng ng vi hai tr gi (hai logic) l:
- Mc High (cao): 5V i vi IC CMOS v 3,6V i vi IC TTL
- Mc Low (thp): 0V i vi IC CMOS v 0,3V i vi IC TTL
Thng thng logic 1 tng ng vi mc H, logic 0 tng ng vi mc L
Logic 1 v logic 0 ch hai trng thi i nghch nhau: ng v m, ng v sai,
cao v thp
Chng loi IC digital khng nhiu. Chng ch gm mt s cc loi mch logic cn
bn, gi l cng logic.
V cng ngh ch to, IC digital gm cc loi:
- RTL: Resistor Transistor logic
- DTL: Diode Transistor logic
- TTL: Transistor Transistor logic
Trang 162
2. IC analog:
L loi IC x l tn hiu Analog, l loi tn hiu bin i lin tc so vi IC Digital, loi
IC Analog pht trin chm hn. Mt l do l v IC Analog phn ln u l mch chuyn dng
(special use), tr mt vi trng hp c bit nh OP-AMP (IC khuch i thut ton), khuch
i Video v nhng mch ph dng (universal use). Do tho mn nhu cu s dng, ngi
ta phi thit k, ch to rt nhiu loi khc nhau.
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