CBE455

Nanochemical Technology
(Lecture 14)

Instructor : Doh Chang Lee (dclee@kaist.edu)

Magne<c Suscep<bility : Xm
Diamagne*c

Paramagne*c

Ferromagne*c

Paired spins cancel each other

a0ract a eld

repels a eld

Nitrogen (N2)

Oxygen (O2)

Data

Magne*za*on

Temperature
Temperature scan:
H held at a constant value

Field sweep: temp. held constant

Hysteresis in eld sweep of ferromagnet is due to domain wall movement

Transi;on metals: guess their proper;es

Fe

Co

Ni

Cu

Zn

Hard versus so> magnets

M

SoK magnets : inductors, etc.

Hard magnets = memory storage.

High density memory storage

How small can you go?

What limits the technology ?

Ferromagne;sm
Requires unpaired spins
Spins interact couple
Consider iron

Nature uses the scaling law!!!

Exploita*on of a fundamental
scaling law.
Maximum size for a magnet to be
a single domain with no defects
(~30-40 nm)
Least amount of materials to
achieve the greatest degree of
magne*za*on

Dunin-Borkowski et al., Science, 282, 1868 (1998)

Superparamagne;sm: the blocking temperature

M

Ferromagnetic

Superparamagnetic

Random magnetization
due to thermal energy

TB

Superparamagne;c limit

Quiz

hexagonal monolayer of 3 nm diameter magnetic memory bits, what is th

ation if one would like to achieve 1 Tb/in2 storage density?

haracteristic
time !, time,
for a magnetized
domaindomain
to flip to
is flip
given
by: by:
The characteristic
, for a magnetized
is given
$ #K uV '
1
= f 0 exp&
)
% kT (
"

where
Ku is the magnetocrystalline
is (the
magnetocrystalline
anisotropy,anisotropy,
V is the volume of the nanocrysta
is the
volume of the
nanocrystal
diameter),factor, what is the
e, kV is
Boltzmanns
constant
and (4
is in
a frequency
f 0 nm
!
T is the temperature,
ystalline anisotropy that is needed -5for a memory storage application
-1 k is Boltzmanns constant (8.6110 eV/K) ,
Is athere
such a material that could meet these technological specificati
c )f is
frequency factor (use 10-9 sec-1) )
0

what is the minimum magnetocrystalline anisotropy (Ku) that is needed

for a memory storage application at room temperature (kT = 26 meV)?
Assume that the flip time should be longer than 100 sec.

We want to have a small size magnetic bit. (small V)

Magnetic energy scales with V.
To keep the magnet reliably magnetic, we need to either lower T or increase KV.