Vertical silicon nanowire p-n junction color photodetector for large area

nanophotonics
Veerendra Dhyani1, Jyoti Sharma2, Neeraj Kumar1, Priyanka Diwedi1 and Samaresh Das1,*
1

Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New

Delhi-110016, India
2

Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi-

110016, India

Recent studies show that the challenges faced in the conventional color image sensor at
higher pixel densities can be overcome using semiconductor nanowires. It is possible due to
the diameter dependent spectral response of nanowires. Being the key component of
semiconductor industry, silicon has shown its potential in the field of nanophotonics.
However the use of Si NWs for the large area application is quite limited due to non-uniform
growth process and their integration for the useful devices.
In this work we have demonstrated CMOS color photodetector of vertical Si NW p-n
junction embedded in a transparent medium (PMMA). The vertical Si NWs were synthesized
by metal assisted chemical etching (MACE) in AgNO3HF system. The height of the NWs
was ~1 m with junction depth 450 nm and the diameter was varied from 40-100 nm.
Current-voltage characteristic of individual NWs was recorded using conductive atomic force
microscopy which confirmed the diode behaviour. To make the electrical contact on top of
the NWs, a transparent layer of sputtered indium tin oxide (ITO) was deposited after filling
the NW with PMMA. The bottom contact has been made on the back side of the p-Si by Al
deposition. The measured dark current of the device was 10 nA at 1.0 V, while the
photocurrent of ~ 200 nA was found at the same bias under the illumination. Diameter
dependent spectral responsivity showed the color imaging performance of the fabricated
devices.