IFTM University, Moradabad

(Following Subject Code and Roll No. to be filled in your Answer Booklet)

Subject Code: MEC-010

Roll No.

M. Tech. (EC) Semester -I

ODD SEMESTER THEORY EXAMINATION 2015
Vlsi Technology
Time: 03 Hours

Total Marks: 70

Note: 1. Attempt any five questions .All questions carry equal marks.

Q1. (a)Discuss different steps in preparing wafers from raw silicon.

(b) A silicon ingot with 0.5x 1016 boron atoms/cm3 is to be grown by CZ method.What should be
the concentration of boron in the melt to obtain the required doping concentration? The
segregation coefficient of boron is 0.8.
Q2. (a) Show that to grow an oxide layer of SiO2 layer of thickness x, a thickness of 0.44x of
silicon is consumed.
(b) Explain the application of SiO2 layer in IC fabrication.
Q3. If the measured phosphorous profile is represented by a Gaussian function with a diffusivity
D=2.3 x 10-13 cm2/s, the measured surface concentration is 1 x1018 atoms/cm3 and the measured
junction depth is 1 m at a substrate concentration of 1 x 1015 atoms/cm3.Calculate diffusion time
and the total dopant in the diffused layer.
Q4. Describe step converge with CVD processes. Explain how gas pressure and surface
temperature may influence these different profiles.
Q5. Describe a typical ion implanter. What are the advantages of ion implantation?
Q6. Explain vapor phase epitaxy. What are the sources of silicon in vapor phase epitaxy?
Q7. Compare ion implantation process with diffusion. What do you mean by annealing and why
it is required in IC fabrication process?
Q8. (a) List the defects in pattern transfer.
(b) List all process steps of pattern transfer with diagram.
Q9. What are PR materials? Describe all types of PR. What are the properties of good PR?
Q10. Explain the metallization and also describe the problems associated with the process.
Explain dc sputtering method of metallization.