PRESENTATION

THIN FILM TRANSISTOR

Presented by:
ANMOL SOOD
RE6902B58
LSE
 INTRODUCTION
A thin film transistor comprises :
•a semiconductor layer
•a gate insulating layer
•a gate electrode
The semiconductor layer is typically a polysilicon layer
whose electron mobility is 100 times higher than that
of an amorphous silicon layer. Thin film transistors are
used as switching devices in flat display panels such as
organic light emitting diodes (OLEDs) or liquid crystal
displays (LCDs).
Types:-

IPS - in-plane switching

MVA - multi-domain vertical alignment
PVA - patterned vertical alignment
CPA - Continuous Pinwheel Alignment
WORKING:
A voltage applied at the gate controls the flow of
electrons (resistance) from the source to the drain; a
positive gate voltage attracts electrons to the bottom
surface of the semiconductor layer and creates a
conduction channel. When a voltage difference is
applied between the two connector wires, electrons
enter at one end (the source) and exit at the other (the
drain), resulting in a current along the channel.
STRUCTURE:
STRUCTURE CONSISTS OF:
1 - Glass plates
2&3 - Horizontal and vertical polarizes
4 - color mask
5&6 - Horizontal and vertical command lines
7 - Rugged polymer layer
8 – Spacers
9 - Thin film transistors
10 - Front electrode
11 - Rear electrodes
MANUFACTURE:
Manufacture
TFTs can be made using a wide variety of semiconductor materials. A
common material is silicon. The characteristics of a silicon based
TFT depend on the crystalline state. That is, the semiconductor layer
can be either amorphous silicon, microcrystalline silicon, or it can
be polysilicon.
Other materials which have been used as semiconductors in TFTs
include compound semiconductors such as cadmium selenide and
metal oxides such as Zinc Oxide. TFT's have also been made using
organic materials.
By using transparent semiconductors and transparent electrodes, such
as indium tin oxide (ITO), some TFT devices can be made
completely transparent.
 Advantages of the Thin Film Transistors
1. High transparency : available for transparent TFTs
2. Room temperature process : available for plastics
substrate
3. Can be used as electrodes, or channel layers.
4. High field effect mobility : 10 ~ 50 cm2V-1S-1
5. Large area deposition
6. Rapid Process
7. Low cost
8. Low leakage current.