PIN DIODE

Small Insertion Loss

Applications

High Isolation

High Power Antenna Switch

High Power Handling

(25W output two-way radio)

Dimensions
MAX 5.0

The XB15A402 PIN diode employs a high reliability glass package that is
designed for solid state antenna switches used in commercial two-way
radios.

Unit : mm
MAX 2.8

MAX 4.2

TYP 0.8

General Description

MIN 28

MIN 28

JEDECDO-41

Absolute Maximum Ratings

Ta=25 OC
UNITS

SYMBOL

PARAMETER

RATINGS

V RM

Repetitive Peak Reverse Voltage

270

I FSM *

Forward Surge Current

Power Dissipation

Tj

Junction Temperature

175

W
C

Tstg

Storage Temperature

-55 ~ 175

* t = 5sec

Electrical Characteristics
Ta=25 OC
SYMBOL

PARAMETER

LIMITS

TEST CONDITIONS
MIN

I R1
I R2
IF

Reverse Current
Forward Current

TYP

V R = 270V

10

V R = 200V
V F = 1.0V

UNITS
MAX
150

500

A
nA
mA

Ct

Diode Capacitance

V R = 12V, f = 1MHz

2.0

3.0

pF

r fs

Forward Series Resistance

I F = 50mA, f = 470MHz

0.5

0.7

fc

Cut-off Frequency

V R = 12V, f = 50MHz

1.0

15

GHz

1059

XB15A402

FORWARD CURRENT
vs. FORWARD VOLTAGE

REVERSE CURRENT
vs. REVERSE VOLTAGE

1.E+00

1.E-07
75

100

50
25

1.E-01

F(A)

1.E-08

R(A)

100
75
50
1.E-02

1.E-09
25
0

1.E-03
0.3

0.4

0.5

0.6

0.7

0.8

1.1

1.2

1.E-10
1.E+00

1.3

1.E+01

1.E+02

1.E+03

F(V)

R(V)

FORWARD SERIES RESISTANCE

vs. FORWARD CURRENT

DIODE CAPACITANCE
vs. REVERSE VOLTAGE

f =470MHz, Ta =25

1.E+00

1.E+00

1.E-01
1.E+00

1.E-01
1.E-03

1.E-02

f =1MHz, Ta =25

1.E+01

(pF)

1.E+01

()

0.9

1.E-01

1.E+01

1.E+02

1.E+03

R(V)

F(A)

Q vs. REVERSE VOLTAGE

f =50MHz, Ta =25

1.E+03

1.E+02

1.E+01

15

1060

1.E+00
1.E+00

1.E+01

R(V)

1.E+02

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