isc Product Specification

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

BUF420A

DESCRIPTION
High Voltage
High Speed Switching

APPLICATIONS
Designed for use in high-frequency power supplies and
motor control applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage VBE= -1.5V

1000

VCEO

Collector-Emitter Voltage

450

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

30

ICM

Collector Current-Peak

60

IB

Base Current-Continuous

IBM

Base Current-peak

PC

Collector Power Dissipation

@TC=25

200

Tj

Junction Temperature

150

-65~150

Tstg

Storage Temperature Range

THERMAL CHARACTERISTICS
SYMBOL
Rth j-c

PARAMETER
Thermal Resistance,Junction to Case

isc websitewww.iscsemi.cn

MAX

UNIT

0.63

/W

isc Product Specification

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

BUF420A

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A; IB= 1A

0.8

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 20A; IB= 2A

0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 10A; IB= 1A

0.9

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 20A; IB= 2A

1.1

ICER

Collector Cutoff Current

VCE=1000V; RBE= 5
VCE=1000V; RBE= 5;TC=100

0.2
1.0

mA

ICEV

Collector Cutoff Current

VCE=1000V; VBE= -1.5V

VCE=1000V; VBE= -1.5V;TC=100

0.2
1.0

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

mA

450

Switching Times; Resistive Load

ts

Storage Time

tf

Fall Time

isc websitewww.iscsemi.cn

IC= 10A; IB1= 0.5A; VCC= 50V;

VBB= -5V, RBB= 0.6; L= 0.25mH
Vclamp= 400V

1.0

0.05