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Gan Schottky Barrier Photodetectors With A - Ga O Cap Layer: Applied Physics Express 5 (2012) 116701
Gan Schottky Barrier Photodetectors With A - Ga O Cap Layer: Applied Physics Express 5 (2012) 116701
Gan Schottky Barrier Photodetectors With A - Ga O Cap Layer: Applied Physics Express 5 (2012) 116701
http://dx.doi.org/10.1143/APEX.5.116701
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Advanced Optoelectronic Technology Center (AOTC) and Center for Micro/Nano Science and Technology,
National Cheng Kung University, Tainan 70101, Taiwan
3
National Nano Device Laboratories (NDL), Tainan 74147, Taiwan
4
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
2
Received August 24, 2012; accepted September 25, 2012; published online October 18, 2012
GaN Schottky barrier UV photodetectors (PDs) with a -Ga2 O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and
characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and
the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional -Ga2 O3 cap
layer helps to reduce the noise level and at the same time achieve a larger detectivity. # 2012 The Japan Society of Applied Physics
Fig. 1.
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Responsivity (A/W)
10
(104)
(202)
(217)
(302)
(111)
(113)
(213)
10
-1
10
40
50
2(deg)
60
70
10
10-2
10-3
10-4
-1
-2
-3
-4
Applied bias (V)
-5
10
10-3
PD_B:-1V
PD_B :-5V
PD_A :-1V
PD_A :-5V
Current (mA)
100
10-5
50
-50
10-7
-100
-4 -3 -2 -1 0 1 2 3
Applied bias (V)
10-9
PD_B
PD_A
10-11
-8
-6 -4 -2
0
Applied bias (V)
2
2
-1
10
10
10-13
-10
PD_A
PD_B
100
280 300 320 340 360 380 400 420 440 460
Wavelength (nm)
-3
101
-2
10-4
30
Responsivity (A/W)
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-23
10
PD_B
10-27
10-29
1/f fitting
PD_A
-31
10
Biased at -5 V
10
100
Frequency (Hz)
1000
Fig. 5. Noise power spectra measured associated with the two fabricated
PDs (PD A and PD B).
S0 ln B 1;
1
where Sn f in the bandwidth range of 0 to 1 Hz is assumed
to be the same and equal to Sn f at 1 Hz. From the data
shown in Fig. 4 and eq. (1), the total square noise currents
hin i2 can then be determined as 1:73 1028 and 4:63
1023 A2 for PD A and PD B, respectively. The total square
noise current hin i2 measured from PD A is about 5 orders of
magnitude smaller than that from PD B due to an eective
passivation of the sample surface as result of incorporating
a semi-insulating -Ga2 O3 cap layer. The noise equivalent
power (NEP) and the normalized detectivity (D ) can then
be evaluated using,
p
hin i2
;
2
NEP
Rp
p
A B
D
;
3
NEP
where R is the responsivity of the PDs, A is the device size,
and B is the bandwidth. Knowing the device size, we can
thus calculate NEPs and D for a given bandwidth of 1 kHz.
It is found that NEP calculated are 4:38 1015 and 3:47
1011 W for PD A and PD B, respectively, while the
corresponding D values are 1:01 1013 and 1:28 109
cm Hz0:5 W1 . These ndings indicate that a lower noise level
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