IXTY1R6N100D2

IXTA1R6N100D2
IXTP1R6N100D2

Depletion Mode
MOSFET

VDSX
ID(on)
RDS(on)

=
>

1000V
1.6A
10

N-Channel
TO-252 (IXTY)

G
S

D (Tab)

Symbol

Test Conditions

VDSX

TJ = 25C to 150C

VGSX

Maximum Ratings

TO-263 AA (IXTA)

1000

Continuous

20

VGSM

Transient

30

PD

TC = 25C

100

- 55 ... +150
150
- 55 ... +150

C
C
C

300
260

C
C

1.13 / 10

Nm/lb.in.

0.35
2.50
3.00

g
g
g

TJ
TJM
Tstg
TL
TSOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

Md

Mounting Torque (TO-220)

Weight

TO-252
TO-263
TO-220

G
S
D (Tab)

TO-220AB (IXTP)

DS

G = Gate
S = Source

D (Tab)

D
= Drain
Tab = Drain

Features

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSX

VGS = - 5V, ID = 250A

VGS(off)

VDS = 25V, ID = 100A

IGSX

VGS = 20V, VDS = 0V

IDSX(off)

VDS = VDSX, VGS= - 5V

RDS(on)

VGS = 0V, ID = 0.8A, Note 1

ID(on)

VGS = 0V, VDS = 50V, Note 1

Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL 94 V-0
Flammability Classification

Characteristic Values
Min.
Typ.
Max.
1000
- 2.5

- 4.5

Advantages

Easy to Mount
Space Savings
High Power Density

100 nA
2 A
25 A

TJ = 125C

2011 IXYS CORPORATION, All Rights Reserved

10
1.6

Applications

Audio Amplifiers
Start-Up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads

DS100185B(03/11)

IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs

Characteristic Values
Min.
Typ.
Max.

VDS = 30V, ID = 0.8A, Note 1

0.65

Ciss

1.10

645

pF

43

pF

11

pF

27

ns

65

ns

34

ns

41

ns

27.0

nC

1.6

nC

13.5
0.50

VGS = -10V, VDS = 25V, f = 1MHz

Coss
Crss
td(on)

Resistive Switching Times

tr

VGS = 5V, VDS = 500V, ID = 0.8A

td(off)

RG = 5 (External)

tf
Qg(on)
Qgs

VGS = 5V, VDS = 500V, ID = 0.8A

Qgd
RthJC
RthCS

TO-220

TO-252 AA Outline

Dim.

Millimeter
Min. Max.

Inches
Min.
Max.

nC

A
A1

2.19
0.89

2.38
1.14

0.086
0.035

0.094
0.045

1.25 C/W
C/W

A2
b

0
0.64

0.13
0.89

0
0.025

0.005
0.035

b1
b2

0.76
5.21

1.14
5.46

0.030
0.205

0.045
0.215

c
c1

0.46
0.46

0.58
0.58

0.018
0.018

0.023
0.023

D
D1

5.97
4.32

6.22
5.21

0.235
0.170

0.245
0.205

E
E1

6.35
4.32

6.73
5.21

0.250
0.170

0.265
0.205

Safe-Operating-Area Specification
Characteristic Values
Min.
Typ.
Max.

Symbol

Test Conditions

SOA

VDS = 800V, ID = 75mA, TC = 75C, Tp = 5s

60

Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VSD
trr
IRM
QRM

Characteristic Values
Min.
Typ.
Max.

IF = 1.6A, VGS = -10V, Note 1

0.8
970
9.96
4.80

IF = 1.6A, -di/dt = 100A/s

VR = 100V, VGS = -10V

1. Gate
2. Drain
3. Source
4. Drain
Bottom Side

1.3

e
e1

2.28 BSC
4.57 BSC

H
L

9.40 10.42
0.51 1.02

0.370
0.020

0.410
0.040

L1
L2
L3

0.64
0.89
2.54

0.025
0.035
0.100

0.040
0.050
0.115

1.02
1.27
2.92

0.090 BSC
0.180 BSC

TO-220 Outline

ns
A
C

Note 1. Pulse test, t 300s, duty cycle, d 2%.

TO-263 Outline

1.
2.
3.
4.

Gate
Drain
Source
Drain
Bottom Side

Dim.

Millimeter
Min.
Max.

Inches
Min. Max.

A
b
b2

4.06
0.51
1.14

4.83
0.99
1.40

.160
.020
.045

.190
.039
.055

c
c2

0.40
1.14

0.74
1.40

.016
.045

.029
.055

D
D1

8.64
8.00

9.65
8.89

.340
.280

.380
.320

9.65

10.41

.380

.405

E1
e
L
L1
L2
L3
L4

6.22
2.54
14.61
2.29
1.02
1.27
0

8.13
BSC
15.88
2.79
1.40
1.78
0.13

.270
.100
.575
.090
.040
.050
0

.320
BSC
.625
.110
.055
.070
.005

Pins:

1 - Gate
3 - Source

2 - Drain

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 1. Output Characteristics @ T J = 25C

Fig. 2. Extended Output Characteristics @ T J = 25C

1.6

4
VGS = 5V
1V
0V

1.4

VGS = 5V
2V
1V

3.5

1.2

2.5

ID - Amperes

ID - Amperes

0V
-1V

0.8
0.6
0.4

2
-1V
1.5
1

- 2V

0.2

- 2V

0.5
- 3V

- 3V

0
0

10

12

14

10

20

30

VDS - Volts

Fig. 3. Output Characteristics @ T J = 125C

VGS = 5V
1V
0V

70

80

VGS = - 3.25V

1E-02

- 3.50V
1E-03

- 3.75V

-1V

ID - Amperes

ID - Amperes

60

1E-01

1.2

0.8
0.6

- 2V

1E-04

- 4.00V

1E-05

- 4.25V
1E-06

- 4.50V

0.4

1E-07

0.2

- 4.75V

1E-08

- 3V

1E-09

12

16

20

24

28

32

100

200

300

VDS - Volts

400

500

600

700

800

900

1000 1100 1200

VDS - Volts

Fig. 5. Drain Current @ T J = 100C

Fig. 6. Dynamic Resistance vs. Gate Voltage

1.E+12

1.E-01

- 3.75V

1.E+10

- 4.00V

1.E+09

- 4.25V

1.E-05

- 4.50V
- 4.75V

1.E-06

R O - Ohms

1.E-03

1.E-04

VDS = 700V - 100V

1.E+11

VGS = - 3.50V

1.E-02

ID - Amperes

50

Fig. 4. Drain Current @ T J = 25C

1.6
1.4

40

VDS - Volts

TJ = 25C

1.E+08
1.E+07

TJ = 100C

1.E+06
1.E+05

1.E-07

1.E+04

100

200

300

400

500

600

700

800

VDS - Volts

2011 IXYS CORPORATION, All Rights Reserved

900

1000 1100 1200

-4.8

-4.6

-4.4

-4.2

-4.0

VGS - Volts

-3.8

-3.6

-3.4

-3.2

IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 8. RDS(on) Normalized to ID = 0.8A Value
vs. Drain Current

Fig. 7. Normalized RDS(on) vs. Junction Temperature

2.6

2.6
VGS = 0V

VGS = 0V

2.4

I D = 0.8A

5V - - - -

2.2

R DS(on) - Normalized

R DS(on) - Normalized

2.2

1.8

1.4

1.0

2.0
TJ = 125C

1.8
1.6
1.4
1.2

TJ = 25C

1.0

0.6

0.8
0.2

0.6
-50

-25

25

50

75

100

125

150

0.5

1.5

TJ - Degrees Centigrade

2.5

ID - Amperes

Fig. 10. Transconductance

Fig. 9. Input Admittance

2.5

2.2
VDS= 30V

VDS= 30V

TJ = - 40C

1.8

g f s - Siemens

ID - Amperes

1.6
1.5

TJ = 125C
25C
- 40C

25C

1.4
1.2

125C

1
0.8
0.6

0.5

0.4
0.2
0

0
-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0.5

VGS - Volts

1.5

2.5

ID - Amperes

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

Fig. 12. Forward Voltage Drop of Intrinsic Diode

5

1.3

1.2
VGS(off) @ VDS = 25V

IS - Amperes

BV / VGS(off) - Normalized

VGS= -10V

1.1
BVDSX @ VGS = - 5V
1.0

2
TJ = 125C
1

0.9

TJ = 25C

0.8
-50

-25

25

50

75

100

125

150

TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

0.3

0.4

0.5

0.6

VSD - Volts

0.7

0.8

0.9

IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 13. Capacitance

Fig. 14. Gate Charge

5

10,000

VDS = 500V

I D = 0.8A

Ciss

1,000

I G = 1mA

100

VGS - Volts

Capacitance - PicoFarads

f = 1 MHz

Coss

1
0
-1
-2

10

-3

Crss

-4
-5

1
0

10

15

20

25

30

35

40

10

VDS - Volts

15

20

25

QG - NanoCoulombs

Fig. 15. Forward-Bias Safe Operating Area

Fig. 16. Forward-Bias Safe Operating Area

@ T C = 25C

@ T C = 75C

10

10
RDS(on) Limit

RDS(on) Limit

25s

100s

100s

1ms
10ms
100ms

0.1

ID - Amperes

ID - Amperes

1ms
10ms

0.1

DC

100ms
DC

TJ = 150C

TJ = 150C

TC = 75C

TC = 25C
Single Pulse

Single Pulse
Fig. 17. Maximum Transient Thermal
Impedance

0.01
10.00

0.01

10

100

1,000

10

100

VDS - Volts

1,000

VDS - Volts

Fig. 17. Maximum Transient Thermal Impedance

hvjv

2.00

Z (th)JC - C / W

1.00

0.10

0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width - Seconds

2011 IXYS CORPORATION, All Rights Reserved

IXYS REF: T_1R6N100D2(2C)8-24-09