ET 364

ASSIGNMENT-1
1. Explain the differences between intrinsic and extrinsic semiconductors.

2. Explain “majority and minority carriers” in a semiconductor.

3. In an N-type semiconductor, the Fermi level lies 0.4 eV below the conduction band at
300 °K. Determine the new position of the Fermi level if (a) the temperature is
increased to 400 °K and (b) the concentration of donor atoms is increased by a factor
of 6. Assume KT = 0.03 eV.

4. In an P-type semiconductor, the Fermi level lies 0.4 eV above the valence band at 300
°K. Determine the new position of the Fermi level if (a) the temperature is increased
to 450 °K and (b) the concentration of donor atoms is increased by a factor of 2.
Assume KT = 0.03 eV.

5. The mobility of electrons and holes in a sample of intrinsic germanium at room

temperature are 0.36 m2 /V-s and 0.17 m2 /V-s, respectively. If the electron and hole
densities are each equal to 2.5 × 1019 /m2, calculate the conductivity.

6. Compute the conductivity of a silicon semiconductor which is doped with acceptor

impurity to a density of 1022 atoms /m2. Given ni = 1.4 × 1016 /m2, µn = 0.145 m2 /V-s
and µp = 0.05 m2 /V-s.

7. Calculate the conductivity of silicon doped with a donor impurity of 2 in 10 8, if there

are 5 × 1028 silicon atoms /m3. Given ni = 1.5 × 1016 /m2, µn = 0.13 m2 /V-s and µp =
0.05 m2 /V-s.

8. State and explain Mass-action law.