VMOS

The term vertical is due primarily to the fact that the channel is now formed in the vertical direction
rather than the horizontal direction for the planar device., VMOS is also used to describe the V-
groove shape vertically cut into the substrate material metal oxide semiconductor
transistor. The "V" shape of the MOSFET's gate allows the device to deliver a higher
amount of current from the source to the drain of the device. The shape of the depletion
region creates a wider channel, allowing more current to flow through it.

the channel of Fig. 5.42 also has the appearance of a “V” cut in the semiconductor base,

Fig 1.VMOS construction.

Current-Voltage Characteristics:

Same as MOSFET.

Applications:

Advantage
 Compared with commercially available planar MOSFETs, VMOS FETs have
reduced channel resistance levels and higher current and power ratings.
 VMOS FETs have a positive temperature coefficient that will combat the possibility
of thermal runaway.
 The reduced charge storage levels result in faster switching times for VMOS
construction compared to those for conventional planar construction.

The device was used as a power device until more suitable geometries, like the UMOS
(or Trench-Gate MOS) were introduced in order to lower tmaximum electric field at the
top of the V shape and thus leading to higher maximum voltages than in case of the
VMOS.
In the V-groove (VMOS) construction of Figure 2.19(b), which was at one
time considered for memory circuits, the substrate acts as the source, with the
channel formed along the four sides of the groove. The channel width is determined
by the thickness of the epitaxial layer, which in early days was shorter
than could be achieved with conventional MOS fabrication methods using lithography—
this is no longer the case. Switching times of a few nanoseconds and a
current-carrying capacity of one amp or more are possible with discrete VMOS
devices.

See sze page 495