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Transistor
Transistor
Next, by KCL
therefore
as we defined in (6). Observe that:
• The small-signal vbe assumption restricts the
operation of the BJT to nearly linear portions of the
iC-vBE characteristic curve.
• From (6), the BJT behaves as a voltage controlled
current source for small signals: The small-signal be
v controls the small-signal ic
Signal Voltage Gain
Second, gm has an important relationship to the
signal voltage gain in this circuit. Using KVL in Fig.
5.48a, the total collector voltage is
we see that
Hence, using (2) in (3)
or with IE =I c|c ,
We are now in a position to construct the equivalent active mode, small-signal circuit
models for the BJT. There are two families of such circuits:
1. Hybrid- p model
2. T model.
Both are equally valid models, but choosing one over the other sometimes leads to simpler
Hybrid- p Model
Version A.
Let’s verify that this circuit incorporates all of the necessarysmall-signal characteristics of
the BJT: ib= vbe|rp as required by (3). ic= gm vbe as required by (5.86), which we saw in
We can also show from these relationships that ie= vbe| re.
T Model
The hybrid- p model is definitely the most popular small-signal model for the BJT. The
alternative is the T model, which is useful in certain situations. The T model also has two
versions:
Version A.
Version B.
The small-signal models for pnp BJTs are identically the same as those shown here for the
npn transistors. It is important to note that there is no change in any polarities (voltage or
current) for the pnp models relative to the npn models. Again, these small-signal models
Consequently,
Hence,
RI =90kb-R2 =53K b For the design with b = 100 it
can be shown that IE =0.48 mA. (This is only a -4%
change from 0.5 mA with b= ¥ ;)
Dual Power Supply Biasing Method
When two power supplies are available, a possible
biasing method is
Av=-gm(ro||Rc||RL
• Overall small-signal current gain, Gi. By definition
Referring to the small-signal equivalent circuit shown
above, we see that
Equivalently,
A is=G i| R l=0 Using (11) in (13) with R l=0 . gives
A is=-g m(r p||R B)
In the usual case that R B r p then A is »-bita This
result is not unexpected because bita is by definition
the short circuit current gain for the BJT when
operating in the active mode.
• Output resistance Rout. Using the small-signal
equivalent circuit above, we short out the source
vsig =0 which means that vp =0 as well. Therefore,
gm vp = 0, which is an open circuit for a current
source. Consequently,
Rout= Rc|| r o which is generally fairly large.
Summary of CE Amplifier Characteristics
Summary for theCommon_Emitter_Amplifier: Big
voltage and current gains are possible. Input
resistance is moderately large. Output resistance is
fairly large. This last characteristic is often not
desirable. Why? Consider this simple Thévenin
equivalent for the output of a small-signal amplifier:
Summary
Summary of the CC (emitter follower) small-signal
amplifier:
1. High input resistance.
2. Gv less than one, and can be close to one.
3. Ais can be large.
4. Low output resistance.These characteristics mean
that the emitter follower amplifier is highly suited as
a voltage buffer amplifier.
The BJT amplifiers we have examined so far are all
low frequency amplifiers. For large valued DC
blocking capacitors and for frequencies of tens to
hundreds of kHz, the simple smallsignal models we
used will work well. As the frequency increases,
though, there are multiple sources of effects that will
limit the performance of these amplifiers including:
1. Internal capacitances of th BJT. These are due to
charge storage effects at and near the two pn
junctions.
2. Parasitic effects. These are due to packaging and
transistor construction that create additional
capacitances, lead inductances, and resistances.
Additionally, the performance of many BJT amplifiers
we’ve already examined will be sharply curtailed by
DC blocking capacitors that have finite value (i.e.,
less than infinity). For these reasons, all real
transistor amplifiers operate effectively only over a
limited (but hopefully large) range of signal
frequencies. Referring to Fig. 5.71(b), our analysis of
small-signal BJT amplifiers up to this point has
focused on the “Midband” frequency region. This
frequency band is bounded by the frequencies fL and
fH, which are the -3-dB gain frequencies, or half-
power frequencies.
The roll off in gain near fL and lower is due to effects
of the DC blocking capacitors CC1 and CC2, and the
bypass capacitor CE. It’s not possible to eliminate
this effect, though fL can be moved about by
choosing different values for these capacitors.
Butlarge capacitors take up lots of space and can be
expensive. The primary focus of this lecture,
however, is the origin of the roll off in gain
xperienced at higher frequencies near fH and
higher.
Capacitance of pn Junctions
There are basically two types of capacitances
associated with pn junctions:
1. Junction capacitance. This is related to the space
charge that exists in the depletion region of the pn
junction.
2. Diffusion capacitance, or charge storage
capacitance. This is a new phenomenon we haven’t
yet considered in this course. The junction
capacitance effect was briefly mentioned earlier in
this course in Lecture 4. The width of the depletion
region will change depending on the applied voltage
and whether the junction is reversed or forward
biased:
Unity-Gain Bandwidth
An important high frequency characteristic of
transistors that is usually specified is the unity-gain
bandwidth, fT. This is defined as the frequency at
which the short-circuit current gain
such that
Therefore