Philips Semiconductors RF Communication. Product.

Product .peclflcatlon

Video amplifier

NE592

DESCRIPTION

The NE592 is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of 100 and 400 without external components and adjustable gains from 400 to 0 with one external resistor. The input stage has been designed so that with the addition of a few external reactive elements between the gain select terminals, the circuit can function as a high-pass, low-pass, or band-pass filter. This feature makes the circuit ideal for use as a video or pulse amplifier in communications, magnetic memories, display, video recorder systems, and floppy disk head amplifiers. Now available in an 8-pin version with fixed gain of 400 without external components and adjustable gain from 400 to 0 with one external resistor.

BLOCK DIAGRAM

FEATURES

• 120MHz unity gain banct.vidth

• Adjustable gains from 0 to 400

• Adjustable pass band

• No frequency compensation required

• Wave shaping with minimal external components

• MIL-STD processing available

APPLICATIONS

• Floppy disk head amplifier

• Video amplifier

• Pulse amplifier in communications

• Magnetic memory

• Video recorder systems

PIN CONFIGURATIONS

INPUT 2

NC G:rB GAIN SELECT

G1BGAIN SELECT

y-

OUTPUT 2

INPUT 2 G1BGAIN SELECT

Y.

OUTPUT 2

D, F, N PackagM

NC

INPUT 1

NC

G:rA GAIN SELECT

G1A GAIN SELECT

TOP VIEW

TOP VIEW

r---~~----~------~----~------~~----~--o+y

R1

AI

R12

R1.

OUTPUT 1

R2

QI

OUTPUT 2

-y

April 15, 1992

93

853-0911 06456

Philips Semiconductors RF Communications Products

Product specification

Video amplifier

NE592

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWGII
14-Pin Plastic DIP Oto +70"0 NE592N14 0405
14-Pin Cerdip o to +70°C NE592F14 0581
14-Pin SO o to +70°C NE592D14 0175
8-Pin Plastic DIP o to +70°C NE592NS 0404
8-PinSO o to +70°C NE592DS 0174 NOTES:

N8, N 14, 08 and 014 package parts also available in "High· gain version by adding "H" before package designation, i.e., NE592HDB

ABSOLUTE MAXIMUM RATINGS T A=+25°C, unless otherwise specified.

SYMBOL PARAMETER RATING UNIT
Vee Supply voltage ±8 V
VIN Differential input voltage is V
VCM Common-mode input voltage ±8 V
lOUT Output current 10 mA
TA Operating ambient temperature range Oto+70 °C
TSTG Storage temperature range -65 to +150 °C
Po MAX Maximum power dissipation,
TA=25°C (still air)1
F-14 package 1.17 W
0-14 package 0.9S W
D-S package 0.79 W
N-14 package 1.44 W
N-8 package 1.17 W NOTES:

2. Derate above 25°C at the following rates:

F-14 package at9.3mWI"C 0-14 package at 7.SmWI"C D-S package at 6.3mW/oC N-14 package at 11.5mWI"C N-8 package at 9.3mW/oC

April 15, 1992

94

Philips Semiconductors RF Communications Products

Product specification

Video amplifier

NE592

DC ELECTRICAL CHARACTERISTICS

TA=+25°C Vss=+6V, VCM=<>, unless otherwise specified. Recommended operating supply voltages Vs=+6.0V. All specifications apply to both standard and high gain parts unless noted differenUy.

SYMBOL PARAMETER TEST CONDITIONS NEJSA592 UNIT
Min Typ Max
AVOL Differential voltage gain,
standard part
Gain l' RL =2kn, VOUT=3Vp_P 250 400 600 VN
Gain 22,4 80 100 120 VN
High gain part 400 500 600 VN
RIN Input resistance
Gain l' 4.0 kn
Gain 22,4 10 30 kn
CIN Input capacitance2 Gain~ 2.0 pF
los Input offset current 0.4 5.0 J.lA
IBIAS Input bias current 9.0 30 J.lA
VNOISE Input noise voltage BW 1kHz to 10MHz 12 ~VRMS
VIN Input voltage range ±1.0 V
CMRR Common-mode rejection ratio
Gain~ VcM±1V, f<100kHz 60 86 dB
Gain~ VcM±1V, f=5MHz 60 dB
PSRR Supply voltage rejection ratio
Gain~ tNs=±O·5V 50 70 dB
Vos Output offset voltage
Gain 1 RL="" 1.5 V
Gain~ RL="" 1.5 V
Gain 33 RL="" 0.35 0.75 V
VCM Output common-mode voltage RL=oo 2.4 2.9 3.4 V
VOUT Output voltage swing RL=2kn 3.0 4.0 V
differential
RoUT Output resistance 20 n
Icc Power supply current RL=- 18 24 rnA NOTES:

1. Gain select Pins G'A and G'B connected together.

2. Gain select Pins G2A and G2B connected together.

3. All gain select pins open.

4. Applies to 14-pin version only.

April 15, 1992

95

Philips Semiconductors RF Communications Products

Product specification

Video amplifier

NE592

DC ELECTRICAL CHARACTERISTICS

DC Electrical CharacteristicsVss=±6V, VCM=O, O°C STAS70oC, unless otherwise specified. Recommended operating supply voltages Vs=+6.0V. A" specifications apply to both standard and high gain parts unless noted differently.

SYMBOL PARAMETER TEST CONDITIONS NElSA592 UNIT
Min Typ Max
AVOL Differential voltage gain,
standard part
Gain 11 RL =2kn, VOUT=3Vp_P 250 600 VN
Gain 22,4 80 120 VN
High gain part 400 SOO 600 VN
RIN Input resistance
Gain 22,4 8,0 kn
los Input offset current 6.0 ItA
IBIAS Input bias current 40 ItA
VIN Input voltage range ±1.0 V
CMRR Common-mode rejection ratio
Gain 2" VcM±1V, f<100kHz SO dB
PSRR Supply voltage rejection ratio
Gain 2" I:Ns=±O·5V SO dB
Output offset voltage
Vas Gain 1 RL=oo 1.5 V
Gain 2" 1.5
Gain 33 1.0
VOUT Output voltage swing differential RL=2kn 2.8 V
Icc Power supply current RL=OO 27 mA NOTES:

1. Gain select Pins G1A and G1B connected together.

2. Gain select Pins G2A and G2B connected together.

3. A" gain select pins open.

4. Applies to 10- and 14-pin versions only.

AC ELECTRICAL CHARACTERISTICS

TA=+25°C Vss=+6V, VCM=O, unless otherwise specified. Recommended operating supply voltages Vs=±6.0V. A" specifications apply to both standard and high gain parts unless noted differently.

SYMBOL PARAMETER TEST CONDITIONS NElSA592 UNIT
Min Typ Max
Bandwidth
BW Gain 11 40 MHz
Gain 22,4 90 MHz
Rise time
tR Gain 11 VOur-1Vp-p 10.5 12 ns
Gain 22,4 4.5 ns
Propagation delay
tpo Gain 11 Vour-1Vp_p 7.5 10 ns
Gain 22,4 6.0 ns NOTES:

1. Gain select Pins G1A and G1B connected together.

2. Gain select Pins G2A and G2B connected together.

3. A" gain select pins open.

4. Applies to 10- and 14-pin versions only.

April 15, 1992

96

Philips Semiconductors RF Communications Products

Product specification

Video amplifier

NE592

TYPICAL PERFORMANCE CHARACTERISTICS

1.10
1.111
Z 1.08
s 1.04
~
i!; 1.02
~ 1.00
w G..
>
i 0. ..
o.M
o.e2 Common-Mode ReJection R.tlo ••• Function of Frequency

GAIN 2
i'"'" V •• :J/4V
TA·2IOC

~ 100II 1M 10M

FREQUENCY - Hz

7.0
J 1.0
I
i 1.0
I 4.0
~
i!; 3.0
~
~ 2.0
8 1.0 100M

Output Volt.ge Swing •• • Function of Frequency

I~ •• ~ I
TA·2IOC -
RL·1kn


1\
, o

1

I 10 10 100 1001000

FREQUENCY - MHz

Pulse Respons. a. a Function of Supply Voltag.

1.1 1.4

GAIN 2
r- TA .2IOC r ~.!:t8~ -
r- RL.1kn l- I-
1/1 V •• :J/4V
" v •• :j:3V _
1/ I-
1/
Ll 1.1
1.4
1.2
>
I 1.0
w
CI o.a
i!!
~ 0.1
~ 0.4
8 0.2
0 Pulse R.sponse

1.1 1.4 > 1.2 .! 1.0 CI

i!! 0.8

~ o.a ~ 0.4 § 0.2

o

.0.2

.0.4

·11 ·10.. 0 I 10 11 20 25 30 35

nME-na

V •• :J/4V _
TA·2I·C
Rt..1k -
_j_ /
- GAIN 2 1/
J
I 1/ GAIN 1
1(.1 Pul .. R .. pon ••••• Function of Temperature

GAIN 2
r- V •• .:tev
t- RL.1kn
I I I
t- T.....,. O"C ~~
~" jA·12IOC
l-
TA .lO"e
_.J_ .0.2 .0.4

·11 ·10 .. 0 I 10 15 :III 25 30 35

nME-na

Voltag. Gain ••• Function of Supply Voltag.

1.4 1.3

~ 1.2 ~ 1.1 i!!1.D ~o.t

I! 0.8

3 0.7 ~o.a

0.1 0.4

IT I I I
.....,.2IOC
".
~
--
GAlN2 ~ !'-
~ ~ ~
~ " "
""" GAIN 1
/
~
8

April 15, 1992

Dlffer.ntlaIOverdrlv.

Recov.ry Time

28

~A.I2I~ - I-

~
1/
1/
V
II""

I~
l/ 8

3

4 I II 7

SUPPLY VOlTAGE -:tV

Voltag. Gain a •• Function of Temperature

I I
v.·.:tev
I"-
'"
- .......;: ~
~~ GAIN 2
'" ......... .......
"
GAIN 1 I"-
" 0.110

0102030 40 10 10 70

TEIFERATURE - OC

1.2

>

I 1.0

I!l

i!; o.a

~ 0.11

i 0.4 § 0.2

o .0.2

.0.4

·15 ·10.a 0 5 10 15 20 25 30 35

nME-na

8

Gain V •• Frequency a •• Function of T.mperatur.

GAIN 2
v.·.:tev I-
RL·1kn

TA· .... OC ~~
TA·2IOC I-
I~ I I~_ r--
A·121
I I , I 10

10 100 100 1000

FREQUENCY - MHz

97

3

4

II

I

7

SUPPLY VOLTAGE -:tV

Philips Semiconductors RF Communications Products

Product specification

Video amplifier

NE592

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Gain vs. Frequency as a Function of Supply Voltage

GAIN 2
TA·25OC I-
RL·1kn
I
, ~ IV~~1IV
Vs·1IV l\~
I "I~
I VISli~i 140

Voltage Gain Adjust Circuit

1000

~

I

Z 100

~

~ 10

~

~

I·'

.01

Voltage Gain as a Function of RADJ (Figure 3)

VS·1IV =
~ '.100kHz =
TA .lIIOC -
RGURE3 =
~ 10 100 1K 101( 100K 1M

Output Voltage and Current Swing aa a Function of Supply Voltage

IT I I I
A·25"C
J...-'
~ t::-- ~
VOLTAGE l"o
" ~ ~~ l-
i;::: ~ CURRENT-
~
~ o 3,0

4.0 1.0 1.0 7.0

auPPLY VOLTAGE-.:lV

Input Nol .. Voltage as a Function of Source Resistance

100 """TTT''''''T'''I'~-rTTT'-r-TT'1rT''''''1

cW~~ II I

II 8080 HTtt-+-t-I+t-t- Vs.1IV ,_

~ TA.a5OC -

~ 10 BW. 10MHz

e

~ 80 ~+*-r~~~~r+-H~~

e III 1-tt+H-+H-I-+-HH-++HhA

I : ~+*-r~~~~r+7A~~

V

i : r=t=ttF~=m=~FHf.+H-tJf-I

o ~.u-L~~L-U.~~UL~

-10 1

10100

500 1000

Supply Current as a Function of Supply Voltage

IVS~1I~
t- TA.25OC ~V
GAIN 2
1/
~
1 If'
~
1...0"
r- ,..... 10

100

1K

La

10K

April 15. 1992

5 10

FREQUENCY - MHz

Supply Current as a Function of Temperature

21

I I I
vs·1IV _

I ..... ""'" I""- r-
"
",.. 1

I 111

i i 18

8 17 ~

118

15

14

-80

20 80

-20

100

TE ... ERATUAE - OC

Output Voltage Swing as a Function of Load Resistance

7.0 r--r-rTr-""T""""T""T'Mr---,r-r-TT'T""-'

vi I ~ I

J s.o 1--1-+-++--+--+-+++ S .11 -

I TA·25"C

i 5.D I-t-+++-I-t'-tt+--if-+-++t-I

I

III 4.0 t-H*"-+-+-+tl-:r ..... -+-++H

~

e 3.0

t- 2.0 t-t-t-H--t--t:I,t"ttt-t-t-t++--;

~ r

8 1.0 1-++-++--+-*""+++-+-+-+++-1 ~v

10

5001K

5K 10K

50100

LOAD RESISTANCE-a

o o • 411 80 811 100 120 140 1811 180 200

DlFFEREN11AL INPUT VOLTAGE - IIIV

Input Resistance as a Function of Temperature

70

GAIN 2
VS·1IV r-
./~
...... V
,/ V
~ ',tt'
,/ ~ 10

o

-80 -20 0 20

811 100 140

TEMPERATURE - OC

98

SOURCE RESISTANCE - a

Philips Semiconductors RF Communications Products

Product specification

Video amplifier

NE592

1-:

I

i -11

J ~

'I 40

I

Z 30

3

~ zo ~

~ 10

o

Ph ... Shift ••• Function of Frequency

o

~ ~AI~2 I -
" vs·:t,8V -
..... TA=2IOC
~
"
r"'-
'"
...... Ph ... Shift •••
Function of Frequency
0
-10
m
I -100
-150
I
Ii: ~
is
:II 450
I ..3CJO

-350
10 100 1000 40
30
'I zo
I
Z 10
~
e 0
w
e -10
~
~ -20
-30 1000

FREQUENCY - MHz

Voltage G.ln .a • Function of Frequency

Vs·:t,8V _
TA. HOC
GAIN 3 -

'"'"
/
, \
/ \
,
.....- ...., -50

.01 .1

10 100 1000

April 15, 1992

-25

o 1 2 3 411 7 • • ~

FREQUENCY - MHz

Volt.ge Gain aa a Function of Frequency

10

.! Vs·%lV
f-- GAIN 1 __ T ..... 2IOC
f-- GAIN 2 I -........RL.1Kn
~
~
,
~
'\ 50

10

100

FREQUENCY - MHz

FREQUENCY - MHz

99

TEST CIRCUITS T A = 25°C, unless otherwise specified.

RL VOUT

5Ul 51Q

0.21'f

Philips Semiconductors RF Communications Products

Product specification

Video amplifier

NE592

TYPICAL APPLICATIONS

21'.

V1

NOTE:

Vo(Il 1.4 .104

"1('1-~

1.4 • 104

- Z(S):32

.... c Conllguratlon

...

Q

AMPUTUDE: 1.10mVH FREQUENCY: 1-4l1li&

..

READ HEAD

DlFFERENTlATORIAMPUAER

ZERO CROSSING DETECTOR

FILTER NETWORKS

ZNETWORK ALTER Vo (I) TRANSFER
TYPE V1 (I) FUNCTlON
R L 1.4)( 10" [8+~/l]
~ LOW PASS --l-
R C 1.4)( 10" [I+:/RC]
~I 0 tlGHPASS --R-
R L C 1.4)( 104 [ .2+ R; .. I/lC ]
~I--<> BANDPASS --l-
L
R 1.4)( 104 [ ~+I/lC ]
~ llANO REJECT --R- ,2+ l/lC+I/RC
----1'__
NOTES:
In 1I1e networks above. lhe R value used Is assumed 10 Include 2re. or approximately 32n.
S-jfll
f11-2ld April 15. 1992

100

Vo

V1

..

NOTE:

For frequency F, « 112" (32) C

040.

Vo - 1.4" 1 C 4i'

D.2I'F

~ 12~o

7 G.2i1F

T-

NAPCI SIGNETICS/MILITARY

20

D

II 6653926 0001111 3 II

MIlHary Products SIGNETlCS STANDARD PACKAGE DESCRIPTIONS

All Military package case outlines and physical dimensions conform with the current revision MIL-M-38510, Appendix 0, except for package types which are not included In that specificadon,

The physical dimensions for standard package types which are not included In Appendix 0 are Included herein In Appendix 0 formal Case oudine letters are assigned to these packages aocordingtoJEDEC Publication 101 as follows:

U: Leacless chip carriers X: Dual-In-line packages V: Flat packages

Z: All other configuretions

Packaging Information

T·qO-2D

Signetics

A case oudine suffix number Is assigned herein for Identification purposes only, and Is not marked on the product

Signetics MilitlllY products are offered in a wide range of package configurations to optlmally fit our customer needs.

• Dual-In-line Packages; Frit glass sealed OERDIP (F package family) with 8-40 leeds, and side-brazed ceramic (I package family) with 48.04lsads.

• Flat Packages; Frit glass sealed alumina OERPAO (W package family) wllh 14-28 leeds, and brazed leaded ceramic (0 package family) with 52 leads.

• Ceramic Ohip Oarriers; biple laminated, metal-lidded LCO (G package family) with 20-68 terminals.

• Pin Grid Array; metal-lidded ceramic pin grid (P package family) with 68-100 leads.

• Shown in Table 1 are the case oudine letters assigned acccrding to Appendix 0 of MIL-M-38510 and JEDEC publication 101. Unless otherwise noted, all package types are Configuration 1 and all lead finishes are hot solder dip Finish ·A· •

Table 1

Plckag. Deacrlptlon Type DeelgnaUon ea .. Outlln. theta-JO °CIWatt4
8DIPa 0-4 P 28
14DIPa 0-1 C 28
16DIPa 0-2 E 28
18DIPa D-6 V 28 .
20DIPa 0-8 R 28
22DIP4 0-7 W 28
24DIPa 0-9 L 28
240lP4 0-11 )(2 28
24DIPS 0-3 J 28
28DIP6 0-10 )(2 28
40DIPS 0-5 0 28
48DIPS D-W )(2 28
5ODIP9 D-12t )(2 28
64DIP9 0-13' )(2 28
-
14FLAT F-2 0 22
16FLAT F-5 F 22
lBFLAT F-l0 y2 22
20FLAT F-9 S 22
24FLAT F~ K 22
28FLAT F-ll y2 22
52FLAT V-lt y2 22
lBLLOC 0-9 U2 20
20LLCC o-~ 2 20
2BLLCC 0-43 3 20
32LLCC 0-12 U2 20
44LLCC C-5 U2 20
68LLCC 0-7 U2 20
68PGA P-AB z2 20
84PGA P-AB z2 20 NOTES:

1. Configuration 2.

2. Per JEDEC publication 101.

a. Dimension A (LLCC Ihickness) is 75mils maximum.

4. See RADC last report RADO- TR-S6-97 for Ihermal resistance confidence and derating.

January 1990

9

..

NAPCI SIGNETICS/MILITARY

• 6653926 0001112 5 •

20

D

Signetics Military Products

Packaging Information

CASE OUTLINES V (FLAT PACKAGES)

Configurillon

Conflgurltlon 2

NOTES:

1. A lead tab (enlargement) or Index dot Is located Within the shaded area shown at Pin 1. other pin numbers proceed sequentially from Pin 1 countercfockwise (as viewed from the top 01 the device).

2. This dimension allows for oH-center lid. meniscus. and glass overrun.

3. The reference pin spacing is 0.050 between centerllnes. Each pin centerline is located within ± 0.005 01 its logitudinal position relative to the first and last pin numbers.

4. This dimension Is measured at the point of exit of the lead body.

5. This dimension applied to all four comer pins.

6. Lead dimensions include 0.003 inch allowance for hot solder dip lead finish.

OUTLINE Y1
CONFIGURATION 2
NO. LEADS 52 NOTES
SIG. PKG. QP
INCHES
SYMBOL
Min MIX
A 0.045 0.100
b 0.015 0.026 6
c 0.008 0.015 6
0 . - 1.330 2
E 0.620 0.660
e 0.050850 3
L 0.250 0.370
Q 0.054 0.0666- 4
8 . 0.045 5
81 0.005 . 5 January 1990

10

NAPCI SIGNETICS/MILITARY

Signatics MHiIary PrOOJcts

20

- -

• 6653926 0001113 7 •

D

Packaging Information

CASE OUTLINES X (DUAL IN-LINE PACKAGES)

1. An index notch is located within the shaded area shown. Pin 1 is adjacent to the notch to the immediate left (as

viewed from the top of the device) and other pin numbers proceed sequentially from Pin 1 counterclockwise.

2. The minimum limit for Dimension bl Is 0.023 inches for all four corner pins.

3. This dimension allows for oft-center lid, meniscus, and glass overrun.

4. This dimension is measured at the centerline of the leads for Configuration 2.

5. The reference pin spacing is 0.100 between centerlines. Each pin centerline is located within ±a.Ol0 of its

longitudinal positlon relative to the first and last pin numbers.

6. This dimension is measured from the seating plane to the base plane.

7. This dimension applies to all four corner pins.

8. Lead dimensions include 0.003 inch allowance for hot solder dip lead finish.

Conflgur.llon 1

Janumy 1990

Conflgurallon 2

11

NAPC/ SIGNETICS/MILITARY

20 D • 6653926 0001114 9 •

Signetics Military Products

Packaging Information

LEADLES$ CHIP CARRIER (LLCC) PINOUTS

®00NC000 [ill~[!][!]lIIl!lm

--

.,.. ~

- ,.....-~---

Im~®l§]§]~~ @@@NC@@@

(TOPYl5W)

24-lead Logic Pinout for 28 Terminal Chip Carrier

(TOPYlEW)

28-Leed Pinout for 28 Terminal Chip Carrier· for aU ~vlce Typn

®00NC000 [ill ~ [!J.1!l1Il1!l1Il

: •
: •
~
: ~
~
: ~
~
--- NO@] @)@1 @IE]

NOIl!l

@@] @@ NO@]

(TOPYl5W)

(TOPVJEW)

24-L8Id Memory Pinout for 28 Terminal Chip Carrier

22-Lead Memory Pinout for 28 Terminal Chip Carrier

[] • Chip Catller T.nTlnal Nu_ o . Dual In-Line load NunI>tt NO • No Connoct

January 1990

12

~--- ----~~-_y_----- -- ,~-_.,.....---o~------ ---~- ~~ . "---- ~ - .

-.