MRF237

SILICON NPN RF POWER TRANSISTOR

DESCRIPTION: The MRF237 is

designed for large signal power
amplifier applications operating to PACKAGE STYLE TO-39
225 MHz

MAXIMUM RATINGS
IC 1.0 A
VCBO 36 V
VCEO 18 V
PDISS 8.0 W @ TC = 25 °C
TJ -65 °C to +200 °C 1 = EMITTER 2 = BASE
3 = COLLECTOR
TSTG -65 °C to +200 °C
θJC 22 °C/W

TRANS1.SYM

CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 18 V
BVCES IC = 5.0 mA 36 V
BVEBO IC = 1.0 mA 4.0 V
ICBO VCE = 15 V .25 mA
hFE VCE = 5.0 V IC = 250 mA 5.0 ---

COB VCB = 15 V f = 1.0 MHz 15 20 pF

GPE 12 14 dB
VCC = 12.5 V POUT = 4.0 W f = 175 MHz
η 50 62 %

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.