Assignment – I(B)

Q1.An unknown semiconductor has Eg =1.1eV and Nc = Nv. It is doped with 1015 /cm3 donors,
where the donor level is 0.2eV below Ec. Given that E f is 0.25eV below Ec, calculate ni and
the concentration of electrons and holes in the semiconductor at 400K.

Q2.A semiconductor device requires n – type material; it is to be operated at 400K. Would Si

doped with 1015 atoms/cm3 of Arsenic be useful in this application? Could Ge doped with
1015 atoms/cm3 Antimony be used?

Q3.A new semiconductor has Nc = 1019 /cm3, Nv = 5 x 1018 /cm3, and Eg = 2 eV. If it is doped
with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic carrier
concentration at 6270C. Sketch the simplified band diagram, showing the position of Ef.

Q4.A Si sample is doped with 1017 boron atoms/cm3. What is the electron concentration n0 at
300K? What is the resistivity?

Q5.A Ge sample is doped with 3 x 10 13 Sb atoms/cm3. Using the requirement of space charge
neutrality, calculate the electron concentration n0 at 300K.

Q6.Hall measurements are made on a p- type semiconductor bar 500 µm wide and 20 µm thick.
The Hall contacts A and B are displaced 2 µm with respect to each other in the direction of
current flow of 3 mA. The voltage between A and B with a magnetic field of 10 kG(1kG =
10 -5 Wb/cm2) pointing out of the plane of the sample is 3.2 mV. When the magnetic field
direction is reversed the voltage changes to – 2.8mV. What is the hole concentration and
mobility.