re G33-8S MAXIMUM RATINGS INIA anaaig | 2nzzisA 2N2218A,2N2219,A* Rating Symbot | 2nz222_ | 2Nz222A | Unit ke Caer votooe veo | |_| vee 2N2222,A Collector Base Voltage veso | 6 7 | vée_| | 2n2z18, A/2N2219,A Emiter Base Voltage Veso | _50 0 __| vee CASE 79-04 Collector Current — Continuous vc [800 | 00 | made] | TO-39 (TO-205AD) 2NZzI8A STYLE 1 camer 2naaie,s | 2N2272.8 “Total Deve Dissipation °o 2 @ 1, = 5C os 04 | wan . Derate above 25°C asr_| 228 _|mwre: i Ten “Total Device Dissipation °> " @Tc= 5c 30 12 | wars, (A/2N2222,A Derate above 25°C wa_|_6a5_|mwre CASE 22-03 Opering ana Strge Junction ThTag) et +200 «| °C 10-18 (T0-206AA) jemperature Range hh STYLE 1 THERMAL CHARACTERISTICS be 72NzzIA GENERAL PURPOSE Characteristic Symbol | 2N2219,8 | 2n2222.8 | Unit TRANSISTORS Thermal Revistence, Junction to Ambient | Rasa | 210 | 4375 | “cw [NPN SILICON Thermal Resistance, Junction to C Rac | _58 | vse _| “cw WaNZ2I9A and 2NZ2ZA tre Motorola designated preferred devices. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Characteristic Symbol_[ Min a (OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViaRceo Vee {ic = 10 mAde, Ig = 0) NowA Sufix 20 = ASutfix 2 = Collector Base Breakdown Voltage Viariceo Vas (ig = 10 wAde, le = 0) Nowa Sufix eo - ASutix 5 = Emitter Base Breakdown Voltage Vieniea0 Vae tig = 10 wAde, Ic = 0) Non-A Suffix 50 - ASutix 60. = Collector Gute Current Tcex = 70 Ade Wee = 60 Vee, VeBiotn = 3.0 Vdc) AsSutfe Collector Cutoff Current 'e80 Ade (Wop = 50 Vee. i = 0) Nom Suffix - oot {vee = 60 Vée fg = 0) Astin = oot (Wee = 50 Vee, le = 0, Ta = 180°C) 'Non-A Sufix = 10 (Veg = 60 Vee, le = 0, Ta = 150°C) Auf = 10 Emitter Cutof Current 180 = 10 Ade Weg = 30.Véc. c= 0) AcSutix Base Cutotf Current TL = 2 Ade (ce = 60 Vee, Vepjot) = 3.0 Vdc) AcSutic ‘ON CHARACTERISTICS DC Current G tre = {ig = 0.1 mAde, Voce = 10 Vde) 2n22188 20 2NZ219.A, 2222.4 38 = {ig = 1.0 mAde, Vee = 10 Ve) 2n2z18A 2s 7 2INZ2I9.A, 2N2222A 0 = {ig = 10 mAde, Vce = 10 Véeltt) 2n22188 35 = 2N2219,A, 2N2222A % (ig = 10 mAse, Vee = 10 Vde, 2nzaten 18 - Ta = ~55CI) 2N2219,8, 2N2222.A 38 (ig = 150 mAde, Vee = 10 Vdelt1) 2n2zi8A 40 120 2NZ219,A, 2N2222.8 100 300 Motorola Smali-Signal Transistors, FETs and Diodes Device Data 313 ee2N2218A 2N2219,A 2N2222,8 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted) (Characteriste ‘Symbel_| Min Max, Unit (ig = 180 mAde, Voe = 1.0 Vdel(1) 2N22184, 20 - 2N2219,A, 2N2222.8 50 = lig ='500 mAde, Voge = 10 Vdel(1) 2N2219, 2N2222 30 = 2N22180, 3 = 2N2219A, 2N2222A 40 7 Collector Emitter Saturation Voltagelt Veeisat) Vae {ic = 150 mAdc, Ip = 15 mAde) Non-A Sutfic 7 04 ASutix = 03 (ig = 500 mAde, Ig = 50 mAde) Non-A Suffix = 18 ASulix = 19 ‘Base-Emitter Saturation Voltage) Vee(sat) Vée {ig = 150 mAde, Ig = 15 mAdc! Non-A Sutfix os 1a ASutix 08 12 {ic = 500 mAde, Ig = 50 mAde) Non-A Suffix - 26 ASutfix = 20 ‘SMALL-SIGNAL CHARACTERISTICS ‘Current Gain — Bandwidth Product(2) 1 Mie lig = 20 mAde, Vce = 20 Ve, = 100 MHz) All Types, Except 2580 = 2N22I9A, 2N2222A, 300 = ‘Output Capacitancel3) Cobo = 80 oF Wop = 10'Véc, le = 0, f = 1.0 MHz) Taput Capecitance(3) Cibo °F Wep = 05 Vee, Ic = 0,f = 1.0 MH2) Non-A Suffix - 20 ASutfix = = Tnput Impedance Rie ohms Tic = 1.0 mAde, Vog = 10 Vde, f = 1.0 kHz) 2N2218A 10 35 2N2219A, 2N22220 20 80 (ig = 10 mAde, Vcg = 10 Vde, = 1.0 kee) 2N2218A 02 19 2N2219A, 2N2222A, 025 1.25 Voltage Feedback Ratio Pre x10 Tig = 10 mAde, Vcg = 10 Vdc, f= 1.0 Kee) 2NZ21BA - 50 2NZZ1GA, 2N22228 = 80 (ig = 10 mAde, Vg = 10 Vee, = 1.0 kHe) — 2N2218A - 25 ‘2NZ219A, 2N22228 = 40 ‘Small Signal Current Gain Pie = {lg = 1.0 mAde, Vcg = 10 Vde,f = 1.0 kHz) 2N2218A, 20 150 2N2219A, 2N22228 50 300 {ig = 10 mAde, Voge = 10 Vde, f= 1.0 kia) 2N2218A 50 200 2N2219A, 2N22220 5 375 ‘Output Admittance Foe ambos lg = 10 mAde, Vog = 10 Vde,f = 1.0 KHz) 2N2218A 30 6 2NZ219A, 2N22220 50 35 (ig = 10 mAde, Voce = 10 Vde, f= 1.0 ka) 2NZ218A 10 100 2N2219A, 2N22224, 6 200 Collector Base Time Constant WiC = 150 pe (lg = 20 mAde, Veg = 20Vée, f= 91.8 MHz) _A-Sutfix Noise Figu’ NE = 40 @ {ic = 100 uAde, Veg = 10 Vdc, Rg = U0 kohm, f= 1.0 kHz) 2N22228 Real Part of Common-Emitter Relije) = 2 ‘Onms High Frequency Input Impedance {ig = 20 mAde, Vce = 20 Ve, f = 300 MHz) 2NZ218A, 2NZ218A 2N22228 (Gy Pulse Test Pulse Width = 300 ns, Duty Gyele = 2.0%. {2) fy is defined as the feequency at which [nfl extrapolates to unity. {3} 2N5S8: and 2NSEB2 are Listed Cob and Cab for these conditions and values 314 ‘Motorola Small-Signal Transistors, FETs and Diodes Device Data2N2218A 2N2219,A 2N2222,A ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.) Characteristic Symbel_|_ Min Max [_Unie ‘SWITCHING CHARACTERISTICS Delay Time (Wee = 30 Vee, Vae(or = —05 Vas, te = 10 ns cane ic = 180 mAde, lp = 15 mAde) = me fo (Figure 12) i a Storage Time Wee = 30 Vdc, Ic = 160 made, & a 225, 1 cana lt = lag = 15 mAde) r = 0 vs co (Figure 13) - “Aative Region Time Constant Ta = 28 78 {ic = 150 mAde, Veg = 30 Vde) (See Figure 11 for 2N2218A, 2N221SA, 2N2221A, 2N2222A) FIGURE 1 ~ NORMALIZED DC CURRENT GAIN re. NORMALIZED OC CURRENT GAIN S07 o 2 se Ww Te 700 3a 500 ‘COLLECTOR CURRENT (ma FIGURE 2 ~ COLLECTOR CHARACTERISTICSIN SATURATION REGION 1 “This graph shows the effect of ase curentoncolectorcurent. yea (curcent gain atthe edge of saturation) is the curent gain of the a" \ Uransstorat walt an (forced goin) the ratio of e/lwin arcu E EXAMPLE: For type 22219, estimate a base current (1) to insure z \ saturation at a temperature of 25°C and a collector current of ea fl aman] 190m. § Osserve that at = 150 mA an overdrive factor of atleast 2.5 E isequiedtodrive the ransistor wellinto the saturation region From 2. Figure itis seen that ha @ 1 vot is approximately 0.62 of he @ 10 g [Tso] S volts. sing the guaranteed minimum gain of 100 @ 150 mA and 5 =| 2 and substituting values inthe overdrive equation, a] os Ym @ 1.0V 62 Tele 25= Teo/. occ ee ‘ c neces esd Bol Be, OveRORWEFACIOR Motorola Small-Signal Transistors, FETS and Diodes Device Oata 3152N2218A 2N2219,A 2N2222,A VOLTAGE (VOLTS) a PUT IMPEDANCE NS CURRENT CAM aa] os FIGURE 3 ~ “ON” VOLTAGES y=. n dl sD rr) 0 ao 2a 0 ast al on 2 cH a ae(at| 1018 10. vec e Vee 10v Votan © Iola 10 a a ‘COLLECTOR CURRENT In) “This group of graphs illustrates the relationship between hfe and oth for this series of transistors. To obi 100 200 00 FIGURE 4 — TEMPERATURE COEFFICIENTS ng Tae TRC) al svete Veetaa -oal as ve or Va fy. TEMPERATURE COEFFICIENT (nv/PC) al CD ‘COLLECTOR CURRENT (mal bh PARAMETERS Voce # 10 Vde, #= 1.0 kHz, Ta = 25°C “he parameters in these curves, «high gain and a low-gain unit were Selected and the same unite were used to develop the correspondingly numbered curves fon ach graph, FIGURE 5 — INPUT IMPEDANCE wis 20 le COLLECTOR CURRENT nse) 30 FIGURE 7 — CURRENT GAIN Wr |e COLLECTOR CURRENT nae! 36 w 0 FIGURE 6 — VOLTAGE FEEDBACK RATIO so a0] ua WLTAGEFEEDRACK RATIO 10-4 al 0 MigeGara es Maree! 4, CORLECTO® CURRENT inte 1 FIGURE 8 — OUTPUT ADMITTANCE i eae s a OUTPUT AMATNCE Genta 0 uo ow Uw 38 ow te COLLECTOR CURRENT nde pany ‘Motorola Small-Signal Transistors, FETS and Diodes Device Data2N2218A 2N2219,A 2N2222,A SWITCHING TIME CHARACTERISTICS FIGURE 9 — TURN-ON TIME FIGURE 10 — CHARGE DATA 10900 y= st a eis 10 Veg > SY UNLESS NOTED Oy, TOTAL CONTROL: | 3 CHARGE: # z ‘igh GAIN TvPes Zz Low GAIN TYPES} x a Yeo = 2 | 10 Tg AtTIVEREGION chance = ALOS x oe ar te, COLLEDTOR CURRENT na 4g COLEGTOR CURRENT FIGURE 11 — TURN-OFF BEHAVIOR 0 500 | x = ¥ 10) Zn 2 x] Za tell =20 2 é ee =i0 ‘Low Gain Tees HIGH GAIN TYPES er nl i oe 70300 oe 0 oi ho te COQLECTOR CURRENT te CMEC CURRENT nt) FIGURE 12 — DELAY ANO RISE TIME FIGURE 13 — STORAGE TIME AND FALL EQUIVALENT TEST CIRCUIT TIME EQUIVALENT TEST CIRCUT GENERATOR AISE TIME < 2008 bury cvcte 20% ov Pe 20 ov ~ 10058 DUTY ercle = 20% Toe ig 101 obme Cae 29 -tov Gee iF Fieie som = 01 EME Som ‘Motorola Smal-Signal Transistors, FETS and Diodes Device Data a7