TOSHIBA MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 HIGH POWER SWITCHING APPLICATIONS. Unit in mm. MOTOR CONTROL APPLICATIONS. © High Input Impedance © High Speed: ty=0.5ys(Max.) try =U.575(Max.) © Low Saturation Voltage YCE (sat) @ Enhancement-Mode OV (Max.) Includes a Complete Half Bridge in One Package ¢ The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT EL E2 a Bo JEDEC = feias = TOSHIBA, 1091 GI BL/C2 G2 Weight : 480g @p (82) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Vers 1200 Vv (Gate Emitter Voltage Vors £20 Vv Collector Current De te 200 A Ime Top 400 Forward Current ne te 200 A ms Tew 400 Collector Power Dissipation (Te=25°C) Po 1300 Ww [Junction Temperature T 150 °C Storage Temperature Range Taig —40~125 °C Isolation Voltage Visol 2500 (AC 1 minute) Vv Serew Torque (Terminal / Mounting) = 3/3 Nem scunieuaa © FOHA aly BORED SO HIE, oS Oe [MLN 9, Bane, Means, emma, ccs geal an WSaiRE Seles Sealasasd filet ands seas Wiehe eahite tS 97 TOR ee ase Sea nen fet en Rata Pc pact Ao5 la Teo'h ins oe nessa coats st in © Torre caus favch's eerad ony ax» gue forthe sppaton, of ou product. No retpansly is anuned by TOSMBA ac fs Tapas TPAC STB Sar Sb ie BPE es UO NN BS Sis co asst clad hos £ Ua to cake wlan aan Se TMA COMPORATN Fen 7997-03-03 15TOSHIBA ELECTRICAL CHARACTERISTICS (Ta = 25°C) MG200Q2YS40 CHARACTERISTIC symBoL | TEST CONDITION (Gate Leakage Current Tges | Von=#20V, Vog=0 Colleetor Cutoff Current Ices | VoE=1200V, Vop=0 (Cate-Emitter Cutoff Voltage | VoR(OF) | 1o-200mA, Vog-5¥ Colleetor-Emitter Saturation Voltage Verisat) | To=200A, Von=15v —|s0} 40 Input Capacitance Cies__| VoR=10V, Vop=0, = |esooo] — [oF Rise Time tr 03 | 06 -on Time 470 S 4 | 08 Switehing Time [Tumon Time | ton 18 _ [oat os] Fall Time tf 02 | 05 Tumoff Time | _toff soov. 08 | 15 Forward Voltage VP — [20] 30] v Reverse Recovery ime ter — |025| 05) ss ‘Transislor = | — [ose Thermal Resistance RehG-e) fee iw Diode = [= Teas 7997-03-03 2/5TOSHIBA COLLECTOR CURRENT Ic. COLLRCTOR-EMITTER VOLTAGE Vex 0) | i Ic - Vor ve | COMMON EMITTER ) teatee 3 nL Nec ts00w 8: Vorer COLLECTOR-EMITTER VOLTAGE Vor () Vor - Var COWRCTOREMITTER YOLIAGE Vox MG200Q2YS40 Ver - Vor counon EMITTER Ton 400 GATE-EMITTER VOLTAGE Ver () Ver. = Vi ‘counoy COWLECIOREMITTER VOLTAGE Yor GATR-EMITTER VOLTAGE Ver to Vor “oy TI A ‘EMITTER i Vor=5¥ ou wv y i 200 j. GATE-EMITTER VOLTAGE Vex CoumeroREMrT“ER YOUTAGE Vor «> GATE-EMITTER VOLTAGE Ver () Vor.Var Qc GATEENCTTER VOLTAGE Yor 1) ° CHARGE Qo 0) 7997-03-03_3/5TOSHIBA MG200Q2YS40 SWITCHING TIME ~ I¢ SWITCHING TIME ~ Rg. COMMON ure “[ couon exten Vee=s00v, veu= 150 3 Rg=4.10, Ten29°0 a z z z zg é E E P a a Sea eda 801000 CoURCTOR CURRENT Ig.) CATE RESISTANCE Re «®) Ip - VF ter, Ter — IP T vir T t toa : ee 2 se Ht a ® Be = x ea g Ba vf Be : ri B a ounton CATTODE ono one a Soon = a Wape stove e=ae FORWARD VOLTAGE Vp > FORWARD CURRENT Ip «) © ~ vor Run — tw 100 5 5 s 4 & 1000 i : 2 a bg rope Stace & so Fi 2 od fa “ ianasten STAGE 5 al i 3) Soecov. esse A a on cousctoR-aMtrTER VOLTAGE Vee) PULSE WIDTH ty 7997-03-03 4/5TOSHIBA MG200Q2YS40 5) cunves usr ne Wir INCREASE IN TEMPERATURE. COLLECTOR-EMIFTER VOLTAGE Vor () COLLECTOR-EMITTER VOLTAGE Vor (> 1100 SAFE OPERATING AREA sos REVERSE BIAS SOA Sifigacicowm,” Nar 3 al 3 i. TaNOLE z 4 of eam TUN i 8 7997-03-03 5/5