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Tu3B-4 A Low Power Cmos RF Transmitter Front-End For 2.4 GHZ Zigbee Applications
Tu3B-4 A Low Power Cmos RF Transmitter Front-End For 2.4 GHZ Zigbee Applications
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is defined as the ratio of the power to the inductance is smaller to low output p ower ofLO
average power of the tra n smit [7]. This PAPR Therefore low mixer conversion is obtained
parameter a theoreticalmaxinmm output back-off When the size of transistors is the
"f'fmi:rf'flnf',.t in the transmitter. From a PAPR simulation loading inductance becomes larger
with rolloff fact or of 1 and the nominal area, low and
transmit output power of 0 dBm. the output I dB The DC lev el at the gate of the transistor, VI,
of the transmitter .output state sh.ould is also since it c.ontrols the mode.
and the output third-order inter In the balanced driver case, equaIll.I11ount of time in
should be over 10 dBm both on and the conversion of the
mixer is to lIn. If the switches are
set to have less on-time than often referred t.o
bn:ak-b€�!Oire-:ma.ke, the conversion will lll<1JULW:lJ.l)1
to 1 [8], but the mi)(er will also be less Ull'<:lIl:HY.
a for direct conversion receivers in c1ass-A mode while dlsslp.atlng low DC current.
However, in the transmitter and power As a linear the class-A ",""·..,,t.,,"
converSIon of the mixer are the most critical the best [10]. The class-A OJ)!!ral:ton
parameters that need to be considered that the dynamic output current should not exceed the
bias CUlTent at its maximum input power level
To achieve higher power it is also iTnnn:rt",,,f
that the current IS output current
maximized when maximum
is power is fed
to DA. This means that the power-la-current of the
is fixed for a bias current and
maximum power level. Tt,enE't"IT"_ the bias CUlTent
n�ded to guarantee class-A [11]
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the relation betvleen g", and A way .5 shows the output spectrum of the transmitter
ofre(lucin��J is to increase the transistor length L which frorlt-end baseband power of -12 dBm at 5
reduces g,. and increases L has MHz aud LO power of 0.5 dBm at 2.4 GHz. As
undesirable effect of the can be seen in Fig. 5, the measured power conversion
is 12 dB and LO 30 dB. In this
measurement, such
stage. However, for It amount of bias current, that there exits a
PMOS transistors lower transconductance the LSB can ate
which lead to lower applied as shown in
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simulated results. TIle overall measured pe:riOrrflllDCes transi.tor. The RF transmitter front-end is
ofRF transmitter are summarized in Table II. m a 0.18 j.llll CMOS The
20 measurements snow the total power conversion of
12 output power 0 LO of 30 dB, and
0 dB-linear gain-range of 12 dB with the llH"'dJ.llY
than ± 0.5 dB. The RF transmitter front-end UIS:SIJ;HIU:S
e -20 1.8 rnA from 1.8 V and 1.5
� silicon area.
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ACKNOWLEDGEMENTS
"S
A.
::;; -6(]
0 This work was in part the of
Information and Communication, Korea, under the IT
-80
SOC
-100
REFERENCES
-40 -30 -20 -10 o
Input Power [dBm] [1] IEEE 802.IS.WiS, Lmv Rate Wireless Personal Area
Networks, std. 2003.
Fig. 7. Measured OIP3 of the RF transmitter front-end at its
J. et a1.. "Will IEEE 802.15.4 Make
gmn mode
Nem·,,,rkinllC a A Discussion on Low
5 r------, Power, Low Bit Rate Stan dard," IEEE Communications
Magazine, vol. 42, pp. 140-146, June 2004.
A et at., "A Low-Power 2.4-GHz
() Transmitter !Receiver C MOS 1C," IEEE Journal of
Solid-State Circuits, voL 38. pp. 176-183,
2003.
(4] P. Choiet al., "An Coin-Size Radio for
Low-Power WPAN (IEEE
Application at 2.4 GHz," IEEE JOllnutl of Solid-State
-10 Circuih, vol. 38, pp 2258-22 68 , Deeember 2003.
AA Abidi, "Direct Conversi on Radio Transceivers for
Communications", IEEE Journal of Solid-State
-15 '-----'--'---"---' yo1.30, pp. 1399 -1410. December 1995.
folded cascade
at the gate-source terminal of
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