Si7483DP

New Product Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
VDS (V) rDS(on) (Ω) ID (A) D New Low Thermal Resistance PowerPAKt
0.005 @ VGS = --10 V --24
Package with Low 1.07-mm Profile
--30
30
0.0095 @ VGS = --4.5 V --17
APPLICATIONS
D Battery and Load Switching
-- Notebook Computers
-- Notebook Battery Packs

PowerPAKt SO-8
S

6.15 mm S
5.15 mm
1
S
2 G
S
3
G
4
D
8
D
7
D
6
D
D
5

Bottom View
P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS --30
V
Gate-Source Voltage VGS 20

TA = 25_C --24 --14

Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C --19 --11
A
Pulsed Drain Current IDM --60

continuous Source Current (Diode Conduction)a IS --4.5 --1.6

TA = 25_C 5.4 1.9

Maximum Power Dissipationa PD W
TA = 70_C 3.4 1.2

Operating Junction and Storage Temperature Range TJ, Tstg --55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 sec 18 23
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 50 65 C/
_C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.5

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71940 www.vishay.com

S-21441—Rev. A, 19-Aug-02 1
Si7483DP
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = --250 mA --1.0 --3.0 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA

VDS = --24 V, VGS = 0 V --1

Zero Gate Voltage Drain Current IDSS mA
VDS = --24 V, VGS = 0 V, TJ = 70_C --10
On-State Drain Currenta ID(on) VDS = --5 V, VGS = --10 V --30 A
VGS = --10 V, ID = --24 A 0.0041 0.005
Drain Source On
Drain-Source State Resistancea
On-State rDS(on)
DS( ) Ω
VGS = --4.5 V, ID = --17 A 0.0077 0.0095

Forward Transconductancea gfs VDS = --15 V, ID = --24 A 70 S

Diode Forward Voltagea VSD IS = --2.9 A, VGS = 0 V --0.75 --1.1 V

Dynamicb
Total Gate Charge Qg 120 180
Gate-Source Charge Qgs VDS = --15 V, VGS = --10 V, ID = --24 A 18.3 nC
Gate-Drain Charge Qgd 33.2
Turn-On Delay Time td(on) 25 40
Rise Time tr 40 65
VDD = --15 V, RL = 15 Ω
ns
Turn-Off Delay Time td(off) ID ≅ --1 A, VGEN = --10 V, RG = 6 Ω 220 350
Fall Time tf 125 200

Gate Resistance Rg 4 Ω

Source-Drain Reverse Recovery Time trr IF = --2.9 A, di/dt = 100 A/ms 87 135 ns

Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

60 60

VGS = 10 thru 4 V
50 50

40 40
I D -- Drain Current (A)

I D -- Drain Current (A)

30 30

TC = 125_C
20 20

25_C
10 10
3V
--55_C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V)

www.vishay.com Document Number: 71940

2 S-21441—Rev. A, 19-Aug-02
 Si7483DP
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance
0.010 10000

VGS = 4.5 V
0.008 8000
r DS(on) -- On-Resistance ( Ω )

Ciss

C -- Capacitance (pF)
0.006 6000

VGS = 10 V

0.004 4000

0.002 2000 Coss

Crss

0.000 0
0 10 20 30 40 50 0 6 12 18 24 30

ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.6

VDS = 15 V VGS = 10 V
V GS -- Gate-to-Source Voltage (V)

8 ID = 24 A 1.4 ID = 24 A
r DS(on) -- On-Resistance (Ω)
(Normalized)

6 1.2

4 1.0

2 0.8

0 0.6
0 20 40 60 80 100 120 --50 --25 0 25 50 75 100 125 150

Qg -- Total Gate Charge (nC) TJ -- Junction Temperature (_C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

60 0.020

0.016
r DS(on) -- On-Resistance ( Ω )
I S -- Source Current (A)

TJ = 150_C
0.012
10

ID = 24 A
TJ = 25_C
0.008

0.004

1 0.000
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V)

Document Number: 71940 www.vishay.com

S-21441—Rev. A, 19-Aug-02 3
Si7483DP
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power
0.8 200

0.6 160

ID = 250 mA
V GS(th) Variance (V)

0.4
120

Power (W)
0.2

80
0.0

--0.2 40

--0.4 0
--50 --25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ -- Temperature (_C) Time (sec)

Safe Operating Area

100
Limited by 1 ms
rDS(on)

10
10 ms
I D -- Drain Current (A)

100 ms
1

1s

10 s
TC = 25_C
0.1 Single Pulse dc

0.01
0.1 1 10 100
VDS -- Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM -- TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 --4 10 --3 10 --2 10 --1 1 10 100 600
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 71940

4 S-21441—Rev. A, 19-Aug-02
 Si7483DP
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
0.1

0.1

Single Pulse

0.05 0.02

0.01
10 --4 10 --3 10 --2 10 --1 1 10
Square Wave Pulse Duration (sec)

Document Number: 71940 www.vishay.com

S-21441—Rev. A, 19-Aug-02 5
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