This document lists the band gaps in electronvolts (eV) at 302K for various semiconductor materials, including silicon, germanium, gallium arsenide, indium phosphide, cadmium telluride, and copper oxide. Band gaps ranging from 0.27 eV to 6.3 eV are provided from multiple references.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as XLS, PDF, TXT or read online from Scribd
This document lists the band gaps in electronvolts (eV) at 302K for various semiconductor materials, including silicon, germanium, gallium arsenide, indium phosphide, cadmium telluride, and copper oxide. Band gaps ranging from 0.27 eV to 6.3 eV are provided from multiple references.
This document lists the band gaps in electronvolts (eV) at 302K for various semiconductor materials, including silicon, germanium, gallium arsenide, indium phosphide, cadmium telluride, and copper oxide. Band gaps ranging from 0.27 eV to 6.3 eV are provided from multiple references.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as XLS, PDF, TXT or read online from Scribd
This document lists the band gaps in electronvolts (eV) at 302K for various semiconductor materials, including silicon, germanium, gallium arsenide, indium phosphide, cadmium telluride, and copper oxide. Band gaps ranging from 0.27 eV to 6.3 eV are provided from multiple references.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as XLS, PDF, TXT or read online from Scribd